2019

Gott, James A., Beanland, Richard, Fonseka, H. Aruni, Peters, Jonathan J. P., Zhang, Yunyan, Liu, Huiyun and Sánchez, Ana M. (2019) Data for Defect dynamics in self-catalyzed III-V semiconductor nanowires. [Dataset]

Gott, James A., Beanland, Richard, Fonseka, H. Aruni, Peters, Jonathan J. P., Zhang, Yunyan, Liu, Huiyun and Sánchez, Ana M. (2019) Defect dynamics in self-catalyzed III–V semiconductor nanowires. Nano Letters, 19 (7). pp. 4574-4580. doi:10.1021/acs.nanolett.9b01508

Fonseka, H. A., Velichko, Anton V., Zhang, Yunyan, Gott, James A., Davis, George D., Beanland, R., Liu, Huiyun, Mowbray, David J. and Sánchez, Ana M. (2019) Self-formed quantum wires and dots in GaAsP–GaAsP core–shell nanowires. Nano Letters, 19 (6). pp. 4158-4165. doi:10.1021/acs.nanolett.9b01673

2018

Zhang, Yunyan, Sánchez, Ana M., Aagesen, Martin, Huo, Suguo, Fonseka, H. Aruni, Gott, James A., Kim, Dongyoung, Yu, Xuezhe, Chen, Xingyou, Xu, Jia, Li, Tianyi, Zeng, Haotian, Boras, Giorgos and Liu, Huiyun (2018) Growth and Fabrication of High‐Quality Single Nanowire Devices with Radial p‐i‐n Junctions. Small, 15 (3). 1803684. doi:10.1002/smll.201803684

Zeng, Haotian, Yu, Xuezhe, Fonseka, H. Aruni, Gott, James A., Tang, Mingchu, Zhang, Yunyan, Boras, Giorgos, Xu, Jia, Sánchez, Ana M. and Liu, Huiyun (2018) Hybrid III–V/IV Nanowires: High-Quality Ge Shell Epitaxy on GaAs Cores. Nano Letters, 18 (10). pp. 6397-6403. doi:10.1021/acs.nanolett.8b02760