2023

(2023) Different doping behaviors of silicon in zinc blende and wurtzite GaAs nanowires : implications for crystal-phase device design. ACS Applied Nano Materials, 6 (13). pp. 11465-11471. doi:10.1021/acsanm.3c01493 ISSN 2574-0970.

Peters, Jonathan J. P., Mullarkey, Tiarnan, Gott, James A., Nelson, Elizabeth and Jones, Lewys (2023) Interlacing in atomic resolution scanning transmission electron microscopy. Microscopy and Microanalysis . doi:10.1093/micmic/ozad056 ISSN 1435-8115. (In Press)

Chen, Chen, Chu, Yanmeng, Zhang, Linjun, Lin, Haojun, Fang, Wenzhang, Zhang, Zheyu, Zha, Chaofei, Wang, Kejia, Yang, Hui, Yu, Xuezhe, Gott, James A., Aagesen, Martin, Cheng, Zhiyuan, Huo, Suguo, Liu, Huiyun, Sánchez, Ana M. and Zhang, Yunyan (2023) Initialization of nanowire or cluster growth critically controlled by the effective V/III ratio at the early nucleation stage. The Journal of Physical Chemistry Letters, 14 (19). pp. 4433-4439. doi:10.1021/acs.jpclett.3c00484 ISSN 1948-7185.

2022

Rusu, Dorin, Peters, Jonathan J. P., Hase, Thomas P. A., Gott, James A., Nisbet, Gareth A. A., Strempfer, Jörg, Haskel, Daniel, Seddon, Samuel, Beanland, Richard, Sánchez, Ana M. and Alexe, Marin (2022) Ferroelectric incommensurate spin crystals. Nature, 602 (7896). pp. 240-244. doi:10.1038/s41586-021-04260-1 ISSN 0028-0836.

Renz, Arne Benjamin, Vavasour, Oliver J., Gammon, Peter M., Li, Fan, Dai, Tianxiang, Baker, Guy, Grant, Nicholas E., Murphy, John D., Mawby, P. A. (Philip A.), Shah, Vishal and Gott, James A. (2022) (Invited, Digital Presentation) Improved reliability of 4H-SiC metal-oxide-semiconductor devices utilising atomic layer deposited layers with enhanced interface quality. ECS Transactions, 108 (2). pp. 43-49. doi:10.1149/10802.0043ecst ISSN 1938-5862.

2021

Rusu, Dorin, Peters, Jonathan J. P., Hase, Thomas P. A., Gott, James A., Nisbet, Gareth A. A., Strempfer, Jörg, Haskel, Daniel, Seddon, Samuel, Beanland, Richard, Sánchez, Ana M. and Alexe, Marin (2021) Data for Ferroelectric incommensurate spin crystals. [Dataset]

Fonseka, H. Aruni , Zhang, Yunyan, Gott, James A., Beanland, Richard, Liu, Huiyun and Sánchez, Ana M. (2021) Multiple radial phosphorus segregations in GaAsP core-shell nanowires. Nano Research, 14 . pp. 157-164. doi:10.1007/s12274-020-3060-x ISSN 1998-0124.

2020

Fonseka, H. Aruni , Zhang, Yunyan, Gott, James A., Beanland, Richard, Liu, Huiyun and Sánchez, Ana M. (2020) Data for Multiple radial phosphorus segregations in GaAsP core-shell nanowires. [Dataset]

2019

Gott, James A., Beanland, Richard, Fonseka, H. Aruni, Peters, Jonathan J. P., Zhang, Yunyan, Liu, Huiyun and Sánchez, Ana M. (2019) Data for Defect dynamics in self-catalyzed III-V semiconductor nanowires. [Dataset]

Gott, James A., Beanland, Richard, Fonseka, H. Aruni, Peters, Jonathan J. P., Zhang, Yunyan, Liu, Huiyun and Sánchez, Ana M. (2019) Defect dynamics in self-catalyzed III–V semiconductor nanowires. Nano Letters, 19 (7). pp. 4574-4580. doi:10.1021/acs.nanolett.9b01508 ISSN 1530-6984.

Fonseka, H. A., Gott, James A., Beanland, R. and Sanchez, Ana M. (2019) Data for Self-Formed quantum wires and dots in GaAsP−GaAsP core−shell nanowires. [Dataset]

Fonseka, H. A., Velichko, Anton V., Zhang, Yunyan, Gott, James A., Davis, George D., Beanland, R., Liu, Huiyun, Mowbray, David J. and Sánchez, Ana M. (2019) Self-formed quantum wires and dots in GaAsP–GaAsP core–shell nanowires. Nano Letters, 19 (6). pp. 4158-4165. doi:10.1021/acs.nanolett.9b01673 ISSN 1530-6984.

2018

Zhang, Yunyan, Sánchez, Ana M., Aagesen, Martin, Huo, Suguo, Fonseka, H. Aruni, Gott, James A., Kim, Dongyoung, Yu, Xuezhe, Chen, Xingyou, Xu, Jia, Li, Tianyi, Zeng, Haotian, Boras, Giorgos and Liu, Huiyun (2018) Growth and Fabrication of High‐Quality Single Nanowire Devices with Radial p‐i‐n Junctions. Small, 15 (3). 1803684. doi:10.1002/smll.201803684 ISSN 1613-6810.

Zeng, Haotian, Yu, Xuezhe, Fonseka, H. Aruni, Gott, James A., Tang, Mingchu, Zhang, Yunyan, Boras, Giorgos, Xu, Jia, Sánchez, Ana M. and Liu, Huiyun (2018) Hybrid III–V/IV Nanowires: High-Quality Ge Shell Epitaxy on GaAs Cores. Nano Letters, 18 (10). pp. 6397-6403. doi:10.1021/acs.nanolett.8b02760 ISSN 1530-6984.