Engineering and Physical Sciences Research Council (EPSRC)

Gammon, P. M., Chan, Chun Wa, Gity, F., Trajkovic, T., Kilchytska, V., Li, Fan, Pathirana, V., Camuso, G., Ben Ali, K., Flandre, D., Mawby, P. A. (Philip A.) and Gardner, J. W. (2017) Design and fabrication of silicon-on-silicon-carbide substrates and power devices for space applications. E3S Web of Conferences, 16 . 12003. doi:10.1051/e3sconf/20171612003

Chan, Chun Wa, Li, Fan, Mawby, P. A. (Philip A.) and Gammon, P. M. (2017) Numerical study of energy capability of Si/SiC LDMOSFETs. Materials Science Forum, 897 . pp. 751-754. doi:10.4028/www.scientific.net/MSF.897.751

Gammon, P. M., Li, Fan, Chan, Chun Wa, Sánchez, Ana M., Hindmarsh, Steven A., Gity, Farzan, Trajkovic, Tanya, Kilchytska, Valeriya, Pathirana, Vasantha, Camuso, Gianluca, Ben Ali, Khaled, Flandre, Denis, Mawby, P. A. (Philip A.) and Gardner, J. W. (2017) The effect of interfacial charge on the development of wafer bonded silicon-on-silicon-carbide power devices. Materials Science Forum, 897 . pp. 747-750. doi:10.4028/www.scientific.net/MSF.897.747

Chan, Chun Wa, Li, Fan, Sánchez, Ana M., Mawby, P. A. (Philip A.) and Gammon, P. M. (2017) Comparative study of RESURF Si/SiC LDMOSFETs for high-temperature applications using TCAD modeling. IEEE Transactions on Electron Devices, 64 (9). pp. 3713-3718. doi:10.1109/TED.2017.2719898

Chan, Chun Wa, Mawby, P. A. and Gammon, P. M. (2016) Analysis of linear-doped Si/SiC power LDMOSFETs based on device simulation. IEEE Transactions on Electron Devices, 63 (6). pp. 2442-2448. doi:10.1109/TED.2016.2550865

European Union (EU)

Chan, Chun Wa, Li, Fan, Mawby, P. A. (Philip A.) and Gammon, P. M. (2017) Numerical study of energy capability of Si/SiC LDMOSFETs. Materials Science Forum, 897 . pp. 751-754. doi:10.4028/www.scientific.net/MSF.897.751

Horizon 2020 (European Commission) (H2020)

Gammon, P. M., Chan, Chun Wa, Gity, F., Trajkovic, T., Kilchytska, V., Li, Fan, Pathirana, V., Camuso, G., Ben Ali, K., Flandre, D., Mawby, P. A. (Philip A.) and Gardner, J. W. (2017) Design and fabrication of silicon-on-silicon-carbide substrates and power devices for space applications. E3S Web of Conferences, 16 . 12003. doi:10.1051/e3sconf/20171612003

Gammon, P. M., Li, Fan, Chan, Chun Wa, Sánchez, Ana M., Hindmarsh, Steven A., Gity, Farzan, Trajkovic, Tanya, Kilchytska, Valeriya, Pathirana, Vasantha, Camuso, Gianluca, Ben Ali, Khaled, Flandre, Denis, Mawby, P. A. (Philip A.) and Gardner, J. W. (2017) The effect of interfacial charge on the development of wafer bonded silicon-on-silicon-carbide power devices. Materials Science Forum, 897 . pp. 747-750. doi:10.4028/www.scientific.net/MSF.897.747

Chan, Chun Wa, Li, Fan, Sánchez, Ana M., Mawby, P. A. (Philip A.) and Gammon, P. M. (2017) Comparative study of RESURF Si/SiC LDMOSFETs for high-temperature applications using TCAD modeling. IEEE Transactions on Electron Devices, 64 (9). pp. 3713-3718. doi:10.1109/TED.2017.2719898

Royal Academy of Engineering (Great Britain)

Gammon, P. M., Chan, Chun Wa, Gity, F., Trajkovic, T., Kilchytska, V., Li, Fan, Pathirana, V., Camuso, G., Ben Ali, K., Flandre, D., Mawby, P. A. (Philip A.) and Gardner, J. W. (2017) Design and fabrication of silicon-on-silicon-carbide substrates and power devices for space applications. E3S Web of Conferences, 16 . 12003. doi:10.1051/e3sconf/20171612003

Chan, Chun Wa, Li, Fan, Mawby, P. A. (Philip A.) and Gammon, P. M. (2017) Numerical study of energy capability of Si/SiC LDMOSFETs. Materials Science Forum, 897 . pp. 751-754. doi:10.4028/www.scientific.net/MSF.897.751

Gammon, P. M., Li, Fan, Chan, Chun Wa, Sánchez, Ana M., Hindmarsh, Steven A., Gity, Farzan, Trajkovic, Tanya, Kilchytska, Valeriya, Pathirana, Vasantha, Camuso, Gianluca, Ben Ali, Khaled, Flandre, Denis, Mawby, P. A. (Philip A.) and Gardner, J. W. (2017) The effect of interfacial charge on the development of wafer bonded silicon-on-silicon-carbide power devices. Materials Science Forum, 897 . pp. 747-750. doi:10.4028/www.scientific.net/MSF.897.747

Chan, Chun Wa, Li, Fan, Sánchez, Ana M., Mawby, P. A. (Philip A.) and Gammon, P. M. (2017) Comparative study of RESURF Si/SiC LDMOSFETs for high-temperature applications using TCAD modeling. IEEE Transactions on Electron Devices, 64 (9). pp. 3713-3718. doi:10.1109/TED.2017.2719898

Chan, Chun Wa, Bonyadi, Yeganeh, Mawby, P. A. (Philip A.) and Gammon, P. M. (2016) Si/SiC substrates for the implementation of linear-doped power LDMOS studied with device simulation. Materials Science Forum, 858 . pp. 844-847. doi:10.4028/www.scientific.net/MSF.858.844

Chan, Chun Wa, Mawby, P. A. and Gammon, P. M. (2016) Analysis of linear-doped Si/SiC power LDMOSFETs based on device simulation. IEEE Transactions on Electron Devices, 63 (6). pp. 2442-2448. doi:10.1109/TED.2016.2550865

Chan, Chun Wa, Gammon, P. M., Shah, V. A., Chen, Han, Jennings, M. R., Fisher, Craig A., Pérez-Tomás, Amador, Myronov, Maksym and Mawby, P. A. (Philip A.) (2015) Simulations of a lateral PiN diode on SiSiC substrate for high temperature applications. Materials Research Forum, 821 (7). pp. 624-627. doi: 10.4028/www.scientific.net/MSF.821-823.624