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Renz, A. B., Shah, Vishal, Vavasour, Oliver J., Baker, Guy, Bonyadi, Yegi, Sharma, Yogesh K., Pathirana, Vasantha, Trajkovic, Tanya, Mawby, Philip. A., Antoniou, Marina and Gammon, Peter M. (2022) The optimization of 3.3 kV 4H-SiC JBS diodes. IEEE Transactions on Electron Devices, 69 (1). pp. 298-303. doi:10.1109/ted.2021.3129705 ISSN 1557-9646.

Renz, Arne Benjamin, Vavasour, Oliver J., Gammon, Peter M., Li, Fan, Dai, Tianxiang, Baker, Guy, Grant, Nicholas E., Murphy, John D., Mawby, P. A. (Philip A.), Shah, Vishal and Gott, James A. (2022) (Invited, Digital Presentation) Improved reliability of 4H-SiC metal-oxide-semiconductor devices utilising atomic layer deposited layers with enhanced interface quality. ECS Transactions, 108 (2). pp. 43-49. doi:10.1149/10802.0043ecst ISSN 1938-5862.

Renz, Arne Benjamin, Vavasour, Oliver James, Shah, Vishal Ajit, Pathirana, Vasantha, Trajkovic, Tanya, Bonyadi, Yeganeh, Wu, Ruizhu, Ortiz-Gonzalez, Jose Angel , Rong, Xiaoyun, Baker, Guy, Mawby, Philip. A. and Gammon, Peter M. (2021) 3.3 kV SiC JBS diodes employing a P2O5 surface passivation treatment to improve electrical characteristics. In: 2021 IEEE Energy Conversion Congress and Exposition (ECCE), Vancouver, BC, Canada, 10-14 Oct 2021 pp. 5283-5288. doi:10.1109/ECCE47101.2021.9594999 ISSN 2329-3721.