Number of items: 3.
2022
Renz, A. B., Shah, Vishal, Vavasour, Oliver J., Baker, Guy, Bonyadi, Yegi, Sharma, Yogesh K., Pathirana, Vasantha, Trajkovic, Tanya, Mawby, Philip. A., Antoniou, Marina and Gammon, Peter M.
(2022)
The optimization of 3.3 kV 4H-SiC JBS diodes.
IEEE Transactions on Electron Devices, 69
(1).
pp. 298-303.
doi:10.1109/ted.2021.3129705
Renz, Arne Benjamin, Vavasour, Oliver J., Gammon, Peter M., Li, Fan, Dai, Tianxiang, Baker, Guy, Grant, Nicholas E., Murphy, John D., Mawby, P. A. (Philip A.), Shah, Vishal and Gott, James A.
(2022)
(Invited, Digital Presentation) Improved reliability of 4H-SiC metal-oxide-semiconductor devices utilising atomic layer deposited layers with enhanced interface quality.
ECS Transactions, 108
(2).
pp. 43-49.
doi:10.1149/10802.0043ecst
2021
Renz, Arne Benjamin, Vavasour, Oliver James, Shah, Vishal Ajit, Pathirana, Vasantha, Trajkovic, Tanya, Bonyadi, Yeganeh, Wu, Ruizhu, Ortiz-Gonzalez, Jose Angel , Rong, Xiaoyun, Baker, Guy, Mawby, Philip. A. and Gammon, Peter M.
(2021)
3.3 kV SiC JBS diodes employing a P2O5 surface passivation treatment to improve electrical characteristics.
In: 2021 IEEE Energy Conversion Congress and Exposition (ECCE), Vancouver, BC, Canada, 10-14 Oct 2021
pp. 5283-5288.
ISSN 2329-3721.
doi:10.1109/ECCE47101.2021.9594999
This list was generated on Sat Jan 28 06:17:43 2023 GMT.
