Number of items: 5.
2018
Mohamed, A. H., Oxland, R., Aldegunde, M., Hepplestone, S. P., Sushko, P. V. and Kalna, K.
(2018)
Narrowing of band gap at source/drain contact scheme of nanoscale InAsโnMOS.
Solid-State Electronics, 142
.
pp. 31-35.
doi:10.1016/j.sse.2018.01.006
ISSN 0038-1101.
2016
Martinez, Antonio, Price, Anna, Valin, Raul, Aldegunde, Manuel and Barker, John
(2016)
Impact of phonon scattering in Si/GaAs/InGaAs nanowires and FinFets : a NEGF perspective.
Journal of Computational Electronics, 15
(4).
pp. 1130-1147.
doi:10.1007/s10825-016-0851-0
ISSN 1569-8025.
Aldegunde, Manuel, Kermode, James R. and Zabaras , Nicholas
(2016)
Development of an exchangeโcorrelation functional with uncertainty quantification capabilities for density functional theory.
Journal of Computational Physics, 311
.
pp. 173-195.
doi:10.1016/j.jcp.2016.01.034
ISSN 0021-9991.
Elmessary, Muhammad A., Nagy, Daniel, Aldegunde, Manuel, Lindberg, Jari, Dettmer, Wulf G., Peric, Djordje, Garcia-Loureiro, Antonio J. and Kalna, Karol
(2016)
Anisotropic quantum corrections for 3-D finite-element Monte Carlo Simulations of nanoscale multigate transistors.
IEEE Transactions on Electron Devices, 63
(3).
pp. 933-939.
doi:10.1109/TED.2016.2519822
ISSN 0018-9383.
Seoane, N., Indalecio, G., Aldegunde, Manuel, Nagy, Daniel, Elmessary, Muhammad A., Garcia-Loureiro, Antonio J. and Kalna, Karol
(2016)
Comparison of fin-edge roughness and metal grain work function variability in InGaAs and Si FinFETs.
IEEE Transactions on Electron Devices, 63
(3).
pp. 1209-1215.
doi:10.1109/TED.2016.2516921
ISSN 0018-9383.
This list was generated on Thu Dec 7 09:32:52 2023 GMT.