2018

Suvanam, Sethu Saveda, Usman, Muhammed, Martin, David, Yazdi, Milad. G., Linnarsson, Margareta, Tempez, Agnès, Götelid, Mats and Hallén, Anders (2018) Improved interface and electrical properties of atomic layer deposited Al2O3 / 4H-SiC. Applied Surface Science, 433 . pp. 108-115. doi:10.1016/j.apsusc.2017.10.006

2017

Li, Fan, Vavasour, O., Walker, Marc, Martin, David, Sharma, Yogesh K., Russell, Stephen, Jennings, M. R., Pérez-Tomás, Amador and Mawby, P. A. (Philip A.) (2017) Physical characterisation of 3C-SiC(001)/SiO2 interface using XPS. Materials Science Forum, 897 . pp. 151-154. doi:10.4028/www.scientific.net/MSF.897.151

2016

Bonyadi, Yeganeh, Gammon, P. M., Bonyadi, Roozbeh, Shah, Vishal Ajit, Fisher, C. A., Martin, David M. and Mawby, Philip A. (2016) Characterization of 4H-SiC PiN diodes formed on defects identified by PL imaging. Materials Science Forum, 858 . pp. 405-409. doi:10.4028/www.scientific.net/msf.858.405

Rong, Hua, Sharma, Yogesh K., Dai, Tian Xiang, Li, Fan, Jennings, M. R., Russell, Stephen, Martin, David and Mawby, P. A. (Philip A.) (2016) High temperature nitridation of 4H-SiC MOSFETs. Materials Science Forum, 858 . pp. 623-626. doi:10.4028/www.scientific.net/MSF.858.623

Li, Fan, Sharma, Yogesh K., Jennings, M. R., Pérez-Tomás, Amador, Shah, V. A., Rong, Hua, Russell, Stephen, Martin, David and Mawby, P. A. (Philip A.) (2016) Improved channel mobility by oxide nitridation for N-Channel MOSFET on 3C-SiC(100)/Si. Materials Science Forum, 858 . pp. 667-670. doi:10.4028/www.scientific.net/MSF.858.667