Number of items: 5.
Journal Article
Suvanam, Sethu Saveda, Usman, Muhammed, Martin, David, Yazdi, Milad. G., Linnarsson, Margareta, Tempez, Agnès, Götelid, Mats and Hallén, Anders
(2018)
Improved interface and electrical properties of atomic layer deposited Al2O3 / 4H-SiC.
Applied Surface Science, 433
.
pp. 108-115.
doi:10.1016/j.apsusc.2017.10.006
ISSN 0169-4332.
Li, Fan, Vavasour, O., Walker, Marc, Martin, David, Sharma, Yogesh K., Russell, Stephen, Jennings, M. R., Pérez-Tomás, Amador and Mawby, P. A. (Philip A.)
(2017)
Physical characterisation of 3C-SiC(001)/SiO2 interface using XPS.
Materials Science Forum, 897
.
pp. 151-154.
doi:10.4028/www.scientific.net/MSF.897.151
ISSN 1662-9752.
Bonyadi, Yeganeh, Gammon, P. M., Bonyadi, Roozbeh, Shah, V. A., Fisher, C. A., Martin, David M. and Mawby, Philip A.
(2016)
Characterization of 4H-SiC PiN diodes formed on defects identified by PL imaging.
Materials Science Forum, 858
.
pp. 405-409.
doi:10.4028/www.scientific.net/msf.858.405
ISSN 1662-9752.
Rong, Hua, Sharma, Yogesh K., Dai, Tian Xiang, Li, Fan, Jennings, M. R., Russell, Stephen, Martin, David and Mawby, P. A. (Philip A.)
(2016)
High temperature nitridation of 4H-SiC MOSFETs.
Materials Science Forum, 858
.
pp. 623-626.
doi:10.4028/www.scientific.net/MSF.858.623
ISSN 1662-9752.
Li, Fan, Sharma, Yogesh K., Jennings, M. R., Pérez-Tomás, Amador, Shah, V. A., Rong, Hua, Russell, Stephen, Martin, David and Mawby, P. A. (Philip A.)
(2016)
Improved channel mobility by oxide nitridation for N-Channel MOSFET on 3C-SiC(100)/Si.
Materials Science Forum, 858
.
pp. 667-670.
doi:10.4028/www.scientific.net/MSF.858.667
ISSN 1662-9752.
This list was generated on Thu Mar 28 23:47:11 2024 GMT.