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Number of items: 46.
Academy of Finland
Prest, M. J. (Martin J.), Muhonen, Juha, Prunnila, Mika, Gunnarsson, David, Shah, V. A., Richardson-Bullock, J. S., Dobbie, A. (Andrew), Myronov, Maksym, Morris, R. J. H. (Richard J. H.), Whall, Terry E., Parker, Evan H. C. and Leadley, D. R. (David R.) (2011) Strain enhanced electron cooling in a degenerately doped semiconductor. Applied Physics Letters, Vol.99 (No.25). Article: 251908. doi:10.1063/1.3670330 ISSN 0003-6951.
Advantage West Midlands (AWM)
Shah, V. A., Rhead, S., Halpin, John E., Trushkevych, Oksana, Chávez-Ángel, E., Shchepetov, A., Kachkanov, V., Wilson, Neil R., Myronov, Maksym, Reparaz, J. S. et al.
(2014)
High quality single crystal Ge nano-membranes for opto-electronic integrated circuitry.
Journal of Applied Physics, Volume 115
(Number 14).
Article number 144307.
doi:10.1063/1.4870807
ISSN 0021-8979.
Wongwanitwattana, Chalermwat, Shah, V. A., Myronov, Maksym, Parker, Evan H. C., Whall, Terry E. and Leadley, D. R. (David R.) (2014) Precision plasma etching of Si, Ge, and Ge:P by SF6 with added O2. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Volume 32 (Number 3). Article number 031302. doi:10.1116/1.4868615 ISSN 0734-2101.
Birmingham Science City
Shah, V. A., Rhead, S., Halpin, John E., Trushkevych, Oksana, Chávez-Ángel, E., Shchepetov, A., Kachkanov, V., Wilson, Neil R., Myronov, Maksym, Reparaz, J. S. et al.
(2014)
High quality single crystal Ge nano-membranes for opto-electronic integrated circuitry.
Journal of Applied Physics, Volume 115
(Number 14).
Article number 144307.
doi:10.1063/1.4870807
ISSN 0021-8979.
Wongwanitwattana, Chalermwat, Shah, V. A., Myronov, Maksym, Parker, Evan H. C., Whall, Terry E. and Leadley, D. R. (David R.) (2014) Precision plasma etching of Si, Ge, and Ge:P by SF6 with added O2. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Volume 32 (Number 3). Article number 031302. doi:10.1116/1.4868615 ISSN 0734-2101.
Engineering and Physical Sciences Research Council (EPSRC)
Gunnarsson, David, Richardson-Bullock, J. S., Prest, M. J. (Martin J.), Nguyen, H. Q., Timofeev , A. V., Shah, V. A., Whall, Terry E., Parker, Evan H. C., Leadley, D. R. (David R.), Myronov, Maksym and Prunnila, Mika (2015) Interfacial engineering of semiconductor–superconductor junctions for high performance micro-coolers. Scientific Reports, 5 . 17398 . doi:10.1038/srep17398 ISSN 2045-2322.
Shah, V. A., Rhead, S., Halpin, John E., Trushkevych, Oksana, Chávez-Ángel, E., Shchepetov, A., Kachkanov, V., Wilson, Neil R., Myronov, Maksym, Reparaz, J. S. et al.
(2014)
High quality single crystal Ge nano-membranes for opto-electronic integrated circuitry.
Journal of Applied Physics, Volume 115
(Number 14).
Article number 144307.
doi:10.1063/1.4870807
ISSN 0021-8979.
Wongwanitwattana, Chalermwat, Shah, V. A., Myronov, Maksym, Parker, Evan H. C., Whall, Terry E. and Leadley, D. R. (David R.) (2014) Precision plasma etching of Si, Ge, and Ge:P by SF6 with added O2. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Volume 32 (Number 3). Article number 031302. doi:10.1116/1.4868615 ISSN 0734-2101.
Prest, M. J. (Martin J.), Muhonen, Juha, Prunnila, Mika, Gunnarsson, David, Shah, V. A., Richardson-Bullock, J. S., Dobbie, A. (Andrew), Myronov, Maksym, Morris, R. J. H. (Richard J. H.), Whall, Terry E., Parker, Evan H. C. and Leadley, D. R. (David R.) (2011) Strain enhanced electron cooling in a degenerately doped semiconductor. Applied Physics Letters, Vol.99 (No.25). Article: 251908. doi:10.1063/1.3670330 ISSN 0003-6951.
Muhonen, Juha, Prest, M. J. (Martin J.), Prunnila, Mika, Gunnarsson, David, Shah, V. A., Dobbie, A. (Andrew), Myronov, Maksym, Morris, R. J. H. (Richard J. H.), Whall, Terry E., Parker, Evan H. C. and Leadley, D. R. (David R.) (2011) Strain dependence of electron-phonon energy loss rate in many-valley semiconductors. Applied Physics Letters, Vol.98 (No.18). p. 182103. doi:10.1063/1.3579524 ISSN 0003-6951.
Shen, C., Trypiniotis, T., Lee, K. Y., Holmes, S. N., Mansell, Rhodri, Husain, Muhammad Khaled, Shah, V. A., Li, Xiaoli V., Kurebayashi, H., Farrer, I., de Groot, C. H., Leadley, D. R. (David R.), Bell, Gavin R., Parker, Evan H. C., Whall, Terry E., Ritchie, David A. and Barnes, Crispin H. W. (2010) Spin transport in germanium at room temperature. Applied Physics Letters, Vol.97 (No.16). pp. 162104-1. doi:10.1063/1.3505337 ISSN 0003-6951.
Norris, D. J., Walther, T. (Thomas), Cullis, A. G., Myronov, Maksym, Dobbie, A. (Andrew), Whall, Terry E., Parker, Evan H. C., Leadley, D. R. (David R.), Jaeger, B. De., Lee, W., Meuris, Marc, Watling, J. R. and Asenov, A. (Asen) (2010) TEM analysis of Ge-on-Si MOSFET structures with HfO2dielectric for high performance PMOS device technology. Journal of Physics : Conference Series, Vol.209 . article no. 012061. doi:10.1088/1742-6596/209/1/012061 ISSN 1742-6596.
Norris, D. J., Ross, I. M., Cullis, A. G., Walther, T. (Thomas), Myronov, Maksym, Dobbie, A. (Andrew), Whall, Terry E., Parker, Evan H. C., Leadley, D. R. (David R.), Jaeger, B. De., Lee, W. C. and Meuris, Marc (2010) TEM analysis of Si-passivated Ge-on-Si MOSFET structures for high performance PMOS device technology. Journal of Physics : Conference Series, Vol.241 . article no. 012044. doi:10.1088/1742-6596/241/1/012044 ISSN 1742-6596.
Thomas, Stephen M., Whall, Terry E., Parker, Evan H. C., Leadley, D. R. (David R.), Lander, Robert James Pascoe, Vellianitis, G. and Watling, J. R. (2009) Improved effective mobility extraction in MOSFETs. Solid-State Electronics, Vol.53 (No.12). pp. 1252-1256. doi:10.1016/j.sse.2009.09.014 ISSN 0038-1101.
Grasby, T. J., Parry, C. P., Phillips, P. J. (Peter J.), McGregor, Barry M., Morris, R. J. H. (Richard J. H.), Braithwaite, Glyn, Whall, Terry E., Parker, Evan H. C., Hammond, Richard, Knights, Andrew P. and Coleman, P. G. (1999) Technique for producing highly planar Si/SiO0.64Ge0.36/Si metal–oxide–semiconductor field effect transistor channels. Applied Physics Letters, Vol.74 (No.13). pp. 1848-1850. doi:10.1063/1.123689 ISSN 0003-6951.
McGregor, Barry M., Lander, Robert James Pascoe, Phillips, P. J. (Peter J.), Parker, Evan H. C. and Whall, Terry E. (1999) Temperature-dependent Hall scattering factor and drift mobility in remotely doped Si:B/SiGe/Si heterostructures. Applied Physics Letters, Vol.74 (No.9). pp. 1245-1247. doi:10.1063/1.123513 ISSN 0003-6951.
Hammond, Richard, Phillips, P. J., Parker, Evan H. C., Whall, Terry E., Graf, Thomas, Känel, H. von and Sheilds, A. J. (1997) The elimination of surface cross-hatch from relaxed, limited-area Si1 – xGex buffer layers. Applied Physics Letters, Vol.71 (No.17). pp. 2517-2519. doi:10.1063/1.120105 ISSN 0003-6951.
Emeleus, C. J., Sadeghzadeh, Mohammad Ali, Phillips, P. J. (Peter J.), Parker, Evan H. C., Whall, Terry E., Pepper, M. and Evans, A. G. R. (1997) Back gating of a two-dimensional hole gas in a SiGe quantum well. Applied Physics Letters, Vol.70 (No.14). pp. 1870-1872. doi:10.1063/1.118729 ISSN 0003-6951.
European Commission (EC)
Gunnarsson, David, Richardson-Bullock, J. S., Prest, M. J. (Martin J.), Nguyen, H. Q., Timofeev , A. V., Shah, V. A., Whall, Terry E., Parker, Evan H. C., Leadley, D. R. (David R.), Myronov, Maksym and Prunnila, Mika (2015) Interfacial engineering of semiconductor–superconductor junctions for high performance micro-coolers. Scientific Reports, 5 . 17398 . doi:10.1038/srep17398 ISSN 2045-2322.
European Communities (EC)
Prest, M. J. (Martin J.), Muhonen, Juha, Prunnila, Mika, Gunnarsson, David, Shah, V. A., Richardson-Bullock, J. S., Dobbie, A. (Andrew), Myronov, Maksym, Morris, R. J. H. (Richard J. H.), Whall, Terry E., Parker, Evan H. C. and Leadley, D. R. (David R.) (2011) Strain enhanced electron cooling in a degenerately doped semiconductor. Applied Physics Letters, Vol.99 (No.25). Article: 251908. doi:10.1063/1.3670330 ISSN 0003-6951.
European Regional Development Fund (ERDF)
Shah, V. A., Rhead, S., Halpin, John E., Trushkevych, Oksana, Chávez-Ángel, E., Shchepetov, A., Kachkanov, V., Wilson, Neil R., Myronov, Maksym, Reparaz, J. S. et al.
(2014)
High quality single crystal Ge nano-membranes for opto-electronic integrated circuitry.
Journal of Applied Physics, Volume 115
(Number 14).
Article number 144307.
doi:10.1063/1.4870807
ISSN 0021-8979.
Wongwanitwattana, Chalermwat, Shah, V. A., Myronov, Maksym, Parker, Evan H. C., Whall, Terry E. and Leadley, D. R. (David R.) (2014) Precision plasma etching of Si, Ge, and Ge:P by SF6 with added O2. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Volume 32 (Number 3). Article number 031302. doi:10.1116/1.4868615 ISSN 0734-2101.
European Research Council (ERC)
Shah, V. A., Rhead, S., Halpin, John E., Trushkevych, Oksana, Chávez-Ángel, E., Shchepetov, A., Kachkanov, V., Wilson, Neil R., Myronov, Maksym, Reparaz, J. S. et al.
(2014)
High quality single crystal Ge nano-membranes for opto-electronic integrated circuitry.
Journal of Applied Physics, Volume 115
(Number 14).
Article number 144307.
doi:10.1063/1.4870807
ISSN 0021-8979.
European Union (EU)
Parsons, Jonathan, Morris, R. J. H., Leadley, D. R. (David R.), Parker, Evan H. C., Fulgoni, D. J. F. and Nash, Lee John (2008) Relaxation of strained silicon on Si0.5Ge0.5 virtual substrates. Applied Physics Letters, Vol.93 (No.7). 072108. doi:10.1063/1.2975188 ISSN 0003-6951.
French National Research Agency (ANR)
Conzatti, Francesco, Serra, Nicola, Esseni, D. (David), De Michielis, M., Paussa, Alan, Palestri, P. (Pierpaolo), Selmi, L. (Luca), Thomas, S. M., Whall, Terry E., Leadley, D. R. (David R.) et al.
(2011)
Investigation of strain engineering in FinFETs comprising experimental analysis and numerical simulations.
IEEE Transactions on Electron Devices, Vol.58
(No.6).
pp. 1583-1593.
doi:10.1109/TED.2011.2119320
ISSN 0018-9383.
International Association for the Promotion of Co-operation with Scientists from the Independent States of the Former Soviet Union (INTAS)
Irisawa, T., Myranov, Maksym, Mironov, O. A., Parker, Evan H. C., Nakagawa, Kiyokazu, Murata, M., Koh, S. and Shiraki, Y. (2003) Hole density dependence of effective mass, mobility and transport time in strained Ge channel modulation-doped heterostructures. Applied Physics Letters, Vol.82 (No.9). pp. 1425-1427. doi:10.1063/1.1558895 ISSN 0003-6951.
Iran. Majlis-i Shūrā-yi Islāmī [Iran. Islamic Consultative Assembly] (MSI)
Ansaripour, Ghassem, Braithwaite, Glyn, Myranov, Maksym, Mironov, O. A., Parker, Evan H. C. and Whall, Terry E. (2000) Energy loss rates of two-dimensional hole gases in inverted Si/Si0.8Ge0.2 heterostructures. Applied Physics Letters, Vol.76 (No.9). pp. 1140-1142. doi:10.1063/1.125963 ISSN 0003-6951.
Japan. Monbu Kagakushō [Japan. Ministry of Education, Culture, Sports, Science and Technology] (MK)
Irisawa, T., Myranov, Maksym, Mironov, O. A., Parker, Evan H. C., Nakagawa, Kiyokazu, Murata, M., Koh, S. and Shiraki, Y. (2003) Hole density dependence of effective mass, mobility and transport time in strained Ge channel modulation-doped heterostructures. Applied Physics Letters, Vol.82 (No.9). pp. 1425-1427. doi:10.1063/1.1558895 ISSN 0003-6951.
Myranov, Maksym, Irisawa, T., Mironov, O. A., Koh, S., Shiraki, Y., Whall, Terry E. and Parker, Evan H. C. (2002) Extremely high room-temperature two-dimensional hole gas mobility in Ge/Si0.33Ge0.67/Si(001) p-type modulation-doped heterostructures. Applied Physics Letters, Vol.80 (No.17). pp. 3117-3119. doi:10.1063/1.1473690 ISSN 0003-6951.
Mitel (Firm)
Grasby, T. J., Parry, C. P., Phillips, P. J. (Peter J.), McGregor, Barry M., Morris, R. J. H. (Richard J. H.), Braithwaite, Glyn, Whall, Terry E., Parker, Evan H. C., Hammond, Richard, Knights, Andrew P. and Coleman, P. G. (1999) Technique for producing highly planar Si/SiO0.64Ge0.36/Si metal–oxide–semiconductor field effect transistor channels. Applied Physics Letters, Vol.74 (No.13). pp. 1848-1850. doi:10.1063/1.123689 ISSN 0003-6951.
Nano-function Network of Excellence (NFNE)
Prest, M. J. (Martin J.), Muhonen, Juha, Prunnila, Mika, Gunnarsson, David, Shah, V. A., Richardson-Bullock, J. S., Dobbie, A. (Andrew), Myronov, Maksym, Morris, R. J. H. (Richard J. H.), Whall, Terry E., Parker, Evan H. C. and Leadley, D. R. (David R.) (2011) Strain enhanced electron cooling in a degenerately doped semiconductor. Applied Physics Letters, Vol.99 (No.25). Article: 251908. doi:10.1063/1.3670330 ISSN 0003-6951.
Nihon Gakujutsu Shinkōkai [Japan Society for the Promotion of Science] (NGS)
Irisawa, T., Myranov, Maksym, Mironov, O. A., Parker, Evan H. C., Nakagawa, Kiyokazu, Murata, M., Koh, S. and Shiraki, Y. (2003) Hole density dependence of effective mass, mobility and transport time in strained Ge channel modulation-doped heterostructures. Applied Physics Letters, Vol.82 (No.9). pp. 1425-1427. doi:10.1063/1.1558895 ISSN 0003-6951.
Myranov, Maksym, Irisawa, T., Mironov, O. A., Koh, S., Shiraki, Y., Whall, Terry E. and Parker, Evan H. C. (2002) Extremely high room-temperature two-dimensional hole gas mobility in Ge/Si0.33Ge0.67/Si(001) p-type modulation-doped heterostructures. Applied Physics Letters, Vol.80 (No.17). pp. 3117-3119. doi:10.1063/1.1473690 ISSN 0003-6951.
Science and Engineering Research Council (Great Britain) (SERC)
King, P. J. C., Breese, Mark B. H., Smulders, P. J. M., Wilkinson, A. J., Booker, G. R., Parker, Evan H. C. and Grime, G. W. (1995) Evidence from ion channeling images for the elastic relaxation of a Si0.85Ge0.15 layer grown on a patterned Si substrate. Applied Physics Letters, Vol.67 (No.24). pp. 3566-3568. doi:10.1063/1.115319 ISSN 0003-6951.
Gardelis, S., Rimmer, J. S., Dawson, P. (Philip), Hamilton, B. (Bruce), Kubiak, Richard A. A., Whall, Terry E. and Parker, Evan H. C. (1991) Evidence for quantum confinement in the photoluminescence of porous Si and SiGe. Applied Physics Letters, Vol.59 (No.17). pp. 2118-2120. doi:10.1063/1.106098 ISSN 0003-6951.
Zhang, J. P., Tang, Y. S., Robinson, A. K., Bussmann, U., Hemment, P. L. F. (Peter L. F.), Sealy, B., Newstead, S. M. (Simon M.), Powell, A. R., Whall, Terry E. and Parker, Evan H. C. (1990) Behavior of high dose O+-implanted Si/Ge/Si structures. Applied Physics Letters, Vol.57 (No.9). pp. 890-892. doi:10.1063/1.103395 ISSN 0003-6951.
Seventh Framework Programme (European Commission) (FP7)
Shah, V. A., Rhead, S., Halpin, John E., Trushkevych, Oksana, Chávez-Ángel, E., Shchepetov, A., Kachkanov, V., Wilson, Neil R., Myronov, Maksym, Reparaz, J. S. et al.
(2014)
High quality single crystal Ge nano-membranes for opto-electronic integrated circuitry.
Journal of Applied Physics, Volume 115
(Number 14).
Article number 144307.
doi:10.1063/1.4870807
ISSN 0021-8979.
Wongwanitwattana, Chalermwat, Shah, V. A., Myronov, Maksym, Parker, Evan H. C., Whall, Terry E. and Leadley, D. R. (David R.) (2014) Precision plasma etching of Si, Ge, and Ge:P by SF6 with added O2. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Volume 32 (Number 3). Article number 031302. doi:10.1116/1.4868615 ISSN 0734-2101.
Thomas, Stephen M., Whall, Terry E., Parker, Evan H. C., Leadley, D. R. (David R.), Lander, Robert James Pascoe, Vellianitis, G. and Watling, J. R. (2009) Improved effective mobility extraction in MOSFETs. Solid-State Electronics, Vol.53 (No.12). pp. 1252-1256. doi:10.1016/j.sse.2009.09.014 ISSN 0038-1101.
Seventh Framework Programme (European Commission) (FP7/2007-2013)
Muhonen, Juha, Prest, M. J. (Martin J.), Prunnila, Mika, Gunnarsson, David, Shah, V. A., Dobbie, A. (Andrew), Myronov, Maksym, Morris, R. J. H. (Richard J. H.), Whall, Terry E., Parker, Evan H. C. and Leadley, D. R. (David R.) (2011) Strain dependence of electron-phonon energy loss rate in many-valley semiconductors. Applied Physics Letters, Vol.98 (No.18). p. 182103. doi:10.1063/1.3579524 ISSN 0003-6951.
Conzatti, Francesco, Serra, Nicola, Esseni, D. (David), De Michielis, M., Paussa, Alan, Palestri, P. (Pierpaolo), Selmi, L. (Luca), Thomas, S. M., Whall, Terry E., Leadley, D. R. (David R.) et al.
(2011)
Investigation of strain engineering in FinFETs comprising experimental analysis and numerical simulations.
IEEE Transactions on Electron Devices, Vol.58
(No.6).
pp. 1583-1593.
doi:10.1109/TED.2011.2119320
ISSN 0018-9383.
Si Towards 2000
Smith, D. W., Emeleus, C. J., Kubiak, Richard A. A., Parker, Evan H. C. and Whall, Terry E. (1992) Growth studies on Si0.8Ge0.2 channel two-dimensional hole gases. Applied Physics Letters, Vol.61 (No.12). pp. 1453-1455. doi:10.1063/1.107515 ISSN 0003-6951.
Suomen Akatemia [Academy of Finland]
Gunnarsson, David, Richardson-Bullock, J. S., Prest, M. J. (Martin J.), Nguyen, H. Q., Timofeev , A. V., Shah, V. A., Whall, Terry E., Parker, Evan H. C., Leadley, D. R. (David R.), Myronov, Maksym and Prunnila, Mika (2015) Interfacial engineering of semiconductor–superconductor junctions for high performance micro-coolers. Scientific Reports, 5 . 17398 . doi:10.1038/srep17398 ISSN 2045-2322.
Swiss Priority Program MINAST
Hammond, Richard, Phillips, P. J., Parker, Evan H. C., Whall, Terry E., Graf, Thomas, Känel, H. von and Sheilds, A. J. (1997) The elimination of surface cross-hatch from relaxed, limited-area Si1 – xGex buffer layers. Applied Physics Letters, Vol.71 (No.17). pp. 2517-2519. doi:10.1063/1.120105 ISSN 0003-6951.
Thailand
Wongwanitwattana, Chalermwat, Shah, V. A., Myronov, Maksym, Parker, Evan H. C., Whall, Terry E. and Leadley, D. R. (David R.) (2014) Precision plasma etching of Si, Ge, and Ge:P by SF6 with added O2. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Volume 32 (Number 3). Article number 031302. doi:10.1116/1.4868615 ISSN 0734-2101.
Ukraine. Ministerstvo u spravakh nauky i tekhnolohiĭ [Ukraine. Ministry of Science and Technology] (MSNT)
Khizhny, V. I., Mironov, O. A., Parker, Evan H. C., Phillips, P. J. (Peter J.), Whall, Terry E. and Kearney, Michael J. (1996) Direct evidence for a piezoelectriclike effect in coherently strained SiGe/Si heterostructures. Applied Physics Letters, Vol.69 (No.7). pp. 960-962. doi:10.1063/1.117095 ISSN 0003-6951.
This list was generated on Mon Mar 18 16:10:47 2024 GMT.