2020

Zhou, Leiqing, Colston, Gerard B., Myronov, Maksym, Leadley, D. R. (David R.), Trushkevych, Oksana, Shah, V. A. and Edwards, R. S. (Rachel S.) (2020) Ultrasonic inspection and self-healing of Ge and 3C-SiC semiconductor membranes. Journal of Microelectromechanical Systems, 29 (3). pp. 370-377. doi:10.1109/JMEMS.2020.2981909 ISSN 1057-7157.

2018

Sivadasan, Vineet, Leadley, D. R. (David R.) and Myronov, Maksym (2018) Kirkendall void formation in reverse step graded Si1−xGex/Ge/Si(001) virtual substrates. Semiconductor Science and Technology, 33 (2). 024002. doi:10.1088/1361-6641/aaa329 ISSN 0268-1242.

2017

Norris, D. J., Myronov, Maksym, Leadley, D. R. and Walther, T. (2017) Comparison of cross-sectional transmission electron microscope studies of thin germanium epilayers grown on differently oriented silicon wafers. Journal of Microscopy, 268 (3). pp. 288-297. doi:10.1111/jmi.12654 ISSN 0022-2720.

Zhou, L. Q., Colston, Gerard B. , Pearce, M., Prince, R. G., Myronov, Maksym, Leadley, D. R. (David R.), Trushkevych, Oksana and Edwards, R. S. (Rachel Sian) (2017) Non-linear vibrational response of Ge and SiC membranes. Applied Physics Letters, 111 (1). 011904. doi:10.1063/1.4991537 ISSN 0003-6951.

Edwards, R. S. (Rachel Sian), Zhou, L. Q., Pearce, M. J., Prince, R. G., Myronov, Maksym, Colston, Gerard B., Leadley, D. R. (David R.) and Trushkevych, Oksana (2017) Laser ultrasonic characterization of membranes for use as micro-electronic mechanical systems (MEMS). In: 43rd Annual Review of Progress in Quantitative Nondestructive Evaluation, Atlanta, GA, USA, 17-22 Jul 2016. Published in: AIP Conference Proceedings, 1806 (1). 050013 . ISBN 9780735414747. ISSN 0094-243X.

Hassan, A. H. A., Morris, R. J. H. (Richard J. H.), Mironov, O A., Gabani, S., Dobbie, A. and Leadley, D. R. (David R.) (2017) An origin behind Rashba spin splitting within inverted doped sGe heterostructures. Applied Physics Letters, 110 (4). 042405. doi:10.1063/1.4974254 ISSN 0003-6951.

2016

Failla, Michele, Kelleher, J., Scalari, G., Maissen, C., Faist, J., Reichl, C., Wegscheider, W., Newell, Oliver, Leadley, D. R. (David R.), Myronov, Maksym and Lloyd-Hughes, James (2016) Terahertz quantum Hall effect for spin-split heavy-hole gases in strained Ge quantum wells. New Journal of Physics, 18 (11). 113036. doi:10.1088/1367-2630/18/11/113036 ISSN 1367-2630.

Morrison, C., Casteleiro, Catarina, Leadley, D. R. (David R.) and Myronov, Maksym (2016) Complex quantum transport in a modulation doped strained Ge quantum well heterostructure with a high mobility 2D hole gas. Applied Physics Letters, 109 (10). 102103. doi:10.1063/1.4962432 ISSN 0003-6951.

Colston, Gerard B., Rhead, Stephen, Shah, V. A., Newell, Oliver, Dolbnya, Igor P., Leadley, David R. and Myronov, Maksym (2016) Mapping the strain and tilt of a suspended 3C-SiC membrane through micro X-ray diffraction. Materials & Design, 103 . pp. 244-248. doi:10.1016/j.matdes.2016.04.078 ISSN 0264-1275.

Brien, T. L. R., Ade, P. A. R., Barry, P. S., Dunscombe, C. J., Leadley, D. R. (David R.), Morozov, D. V., Myronov, Maksym, Parker, Evan H. C., Prest, M. J., Prunnila, M., Sudiwala, R. V., Whall, Terry E. and Mauskopf, P. D. (2016) Optical response of strained- and unstrained-silicon cold-electron bolometers. Journal of Low Temperature Physics, 184 (1-2). pp. 231-237. doi:10.1007/s10909-016-1569-x ISSN 0022-2291.

Mironov, O. A., D’Ambrumenil, Nicholas, Dobbie, A. (Andrew), Leadley, D. R. (David R.), Suslov, A. V. and Green, E. (2016) Fractional quantum Hall states in a Ge quantum well. Physical Review Letters, 116 (17). 176802. doi:10.1103/PhysRevLett.116.176802 ISSN 0031-9007.

Morrison, Christopher, Foronda, Jamie, Wiśniewski, P., Rhead, Stephen, Leadley, D. R. (David R.) and Myronov, Maksym (2016) Evidence of strong spin–orbit interaction in strained epitaxial germanium. Thin Solid Films, 602 . pp. 84-89. doi:10.1016/j.tsf.2015.09.063 ISSN 0040-6090.

Berkutov, I. B., Andrievskii, V. V., Komnik, Yu. F., Kolesnichenko, Yu. A., Berkutova, A. I., Leadley, D. R. (David R.) and Mironov, O. A. (2016) Interference effects in silicon-germanium heterostructures with quantum wells of different widths. Low Temperature Physics, 42 (2). pp. 111-118. doi:10.1063/1.4941963 ISSN 1063-777X.

2015

Gunnarsson, David, Richardson-Bullock, J. S., Prest, M. J. (Martin J.), Nguyen, H. Q., Timofeev , A. V., Shah, V. A., Whall, Terry E., Parker, Evan H. C., Leadley, D. R. (David R.), Myronov, Maksym and Prunnila, Mika (2015) Interfacial engineering of semiconductor–superconductor junctions for high performance micro-coolers. Scientific Reports, 5 . 17398 . doi:10.1038/srep17398 ISSN 2045-2322.

Li, Fan, Sharma, Yogesh K., Shah, V. A., Jennings, M. R., Pérez-Tomás, Amador, Myronov, Maksym, Fisher, Craig A., Leadley, D. R. (David R.) and Mawby, P. A. (Philip A.) (2015) Electrical activation of nitrogen heavily implanted 3C-SiC(100). Applied surface science, 353 . pp. 958-963. doi:10.1016/j.apsusc.2015.06.169 ISSN 0169-4332.

Colston, Gerard B., Myronov, Maksym, Rhead, Stephen and Leadley, D. R. (David R.) (2015) Analysis of surface defects in Si1−yCyepilayers formed by the oversaturation of carbon. Semiconductor Science and Technology, 30 (11). 114003. doi:10.1088/0268-1242/30/11/114003 ISSN 0268-1242.

Halpin, John E., Rhead, Stephen, Sánchez, Ana M., Myronov, Maksym and Leadley, D. R. (David R.) (2015) Growth of complex SiGe/Ge superlattices by reduced pressure chemical vapour deposition at low temperature. Semiconductor Science and Technology, 30 (11). 114009. doi:10.1088/0268-1242/30/11/114009 ISSN 0268-1242.

Myronov, Maksym, Morrison, Christopher, Halpin, John E., Rhead, Stephen, Foronda, Jamie and Leadley, D. R. (David R.) (2015) Revealing high room and low temperatures mobilities of 2D holes in a strained Ge quantum well heterostructures grown on a standard Si(001) substrate. Solid-State Electronics, 110 . pp. 35-39. doi:10.1016/j.sse.2015.01.012 ISSN 0038-1101.

Failla, Michele, Myronov, Maksym, Morrison, Christopher, Leadley, D. R. (David R.) and Lloyd-Hughes, James (2015) Narrow heavy-hole cyclotron resonances split by the cubic Rashba spin-orbit interaction in strained germanium quantum wells. Physical Review B (Condensed Matter and Materials Physics), 92 (4). 045303. doi:10.1103/PhysRevB.92.045303 ISSN 1098-0121.

Chen, Han, Gammon, P. M., Shah, V. A., Fisher, Craig A., Chan, Chun Wa, Jahdi, Saeed, Hamilton, Dean P., Jennings, M. R., Myronov, Maksym, Leadley, D. R. (David R.) and Mawby, P. A. (Philip A.) (2015) Cryogenic characterization of commercial SiC Power MOSFETs. In: Silicon Carbide and Related Materials 2014, Grenoble, France, Sep 2014. Published in: Materials Science Forum, 821-823 pp. 777-780. doi:10.4028/www.scientific.net/MSF.821-823.777 ISSN 1662-9752.

Shah, V. A., Rhead, Stephen, Finch, June, Myronov, Maksym, Reparaz, J. S., Morris, R. J. H. (Richard J. H.), Wilson, Neil R., Kachkanov, V. , Dolbnya, I. P., Halpin, John E., Patchett, D. , Allred, Phil, Colston, Gerard B., Sawhney, K. J. S., Sotomayor Torres, C. M. and Leadley, D. R. (David R.) (2015) Electrical properties and strain distribution of Ge suspended structures. Solid-State Electronics, 108 . pp. 13-18. doi:10.1016/j.sse.2014.12.004 ISSN 0038-1101.

Colston, Gerard B., Myronov, Maksym, Rhead, Stephen, Shah, V. A., Sharma, Yogesh K., Mawby, P. A. (Philip A.) and Leadley, D. R. (David R.) (2015) Si1-xCx/Si(001) heterostructures for use in Schottky diode rectifiers demonstrating high breakdown voltage and negligible leakage current. Materials Science Forum, 821-823 . pp. 571-574. doi:10.4028/www.scientific.net/MSF.821-823.571 ISSN 1662-9752.

Richardson-Bullock, J. S., Prest, M. J. (Martin J.), Shah, V. A., Gunnarsson, David, Prunnila, Mika, Dobbie, A. (Andrew), Myronov, Maksym, Morris, R. J. H. (Richard J. H.), Whall, Terry E., Parker, Evan H. C. and Leadley, D. R. (David R.) (2015) Comparison of electron–phonon and hole–phonon energy loss rates in silicon. Solid-State Electronics, Volume 103 . pp. 40-43. doi:10.1016/j.sse.2014.09.002 ISSN 0038-1101.

Prest, M. J. (Martin J.), Richardson-Bullock, J. S., Zhao, Q. T., Muhonen, J. T., Gunnarsson, David, Prunnila, Mika, Shah, V. A., Whall, Terry E., Parker, Evan H. C. and Leadley, D. R. (David R.) (2015) Superconducting platinum silicide for electron cooling in silicon. Solid-State Electronics, Volume 103 . pp. 15-18. doi:10.1016/j.sse.2014.09.003 ISSN 0038-1101.

Newton, P. J., Llandro, J., Mansell, R., Holmes, S. N., Morrison, Christopher, Foronda, Jamie, Myronov, Maksym, Leadley, D. R. (David R.) and Barnes, C. H. W. (2015) Magnetotransport in p-type Ge quantum well narrow wire arrays. Applied Physics Letters, 106 (17). 172102. doi:10.1063/1.4919053 ISSN 0003-6951.

2014

Morrison, Christopher, Wiśniewski, P., Rhead, Stephen, Foronda, Jamie, Leadley, D. R. (David R.) and Myronov, Maksym (2014) Observation of Rashba zero-field spin splitting in a strained germanium 2D hole gas. Applied Physics Letters, Volume 105 (Number 18). p. 182401. doi:10.1063/1.4901107 ISSN 0003-6951.

Dumas, D. C. S., Gallacher, K., Rhead, S., Myronov, Maksym, Leadley, D. R. (David R.) and Paul, D. J. (2014) Ge/SiGe quantum confined stark effect electro-absorption modulation with low voltage swing at λ = 1550 nm. Optics Express, Volume 22 (Number 16). Article number 19284. doi:10.1364/OE.22.01914119284 ISSN 1094-4087.

Shah, V. A., Myronov, Maksym, Rhead, S., Halpin, John E., Shchepetov, A., Prest, M. J. (Martin J.), Prunnila, Mika, Whall, Terry E., Parker, Evan H. C. and Leadley, D. R. (David R.) (2014) Flat single crystal Ge membranes for sensors and opto-electronic integrated circuitry. Solid-State Electronics, Volume 98 . pp. 93-98. doi:10.1016/j.sse.2014.04.015 ISSN 0038-1101.

Brien, T. L. R., Ade, P. A. R., Barry, P. S., Dunscombe, C., Leadley, D. R. (David R.), Morozov, D. V., Myronov, Maksym, Parker, E. H. C., Prest, M. J., Prunnila, Mika, Sudiwala, R. V., Whall, Terry E. and Mauskopf, P. D. (2014) A strained silicon cold electron bolometer using Schottky contacts. Applied Physics Letters, Volume 105 (Number 4). Article number 043509. doi:10.1063/1.4892069 ISSN 0003-6951.

Rhead, S., Halpin, John E., Shah, V. A., Myronov, Maksym, Patchett, D. H., Allred, Phil, Kachkanov, V., Dolbnya, I. P., Reparaz, J. S., Wilson, Neil R., Sotomayor Torres, C. M. and Leadley, D. R. (David R.) (2014) Tensile strain mapping in flat germanium membranes. Applied Physics Letters, Volume 104 (Number 17). Article number 172107. doi:10.1063/1.4874836 ISSN 0003-6951.

Leadley, D. R. (David R.), Prest, M. J. (Martin J.), Ahopelto, Jouni, Brien, Tom, Gunnarsson, David, Mauskopf, Phil, Muhonen, Juha, Myronov, Maksym, Nguyen, Hung, Parker, Evan H. C., Prunnila, Mika, Richardson-Bullock, J. S., Shah, V. A., Whall, Terry E. and Zhao, Q. T. (2014) Silicon-based cooling elements. In: Balestra, Francis, (ed.) Beyond CMOS Nanodevices. Nanoscience and Nanotechnology Series, Volume 1 . Wiley-ISTE, pp. 303-330. ISBN 9781848216549

Leadley, D. R. (David R.), Shah, V. A., Ahopelto, Jouni, Alzina, Francesc, Chávez-Ángel, Emigdio, Muhonen, Juha, Myronov, Maksym, Nassiopoulou, Androula G., Nguyen, Hung, Parker, E. H. C., Pekola, Jukka, Prest, M. J., Prunnila, Mika, Reparaz, Juan Sebastian, Shchepetov, Andrey, Sotomayor-Torres, Clivia, Valalaki, Katerina and Whall, Terry E. (2014) Thermal isolation through nanostructuring. In: Balestra, Francis, (ed.) Beyond-CMOS Nanodevices. Nanoscience and Nanotechnology Series, Volume 1 . Wiley-ISTE, pp. 331-363. ISBN 9781848216549

Mironov, O. A., Hassan, A. H. A., Morris, R. J. H. (Richard J. H.), Dobbie, A. (Andrew), Uhlarz, M., Chrastina, Daniel, Hague, J. P., Kiatgamolchai, S., Beanland, R., Gabani, S., Berkutov, I. B., Helm, Manfred, Drachenko, O., Myronov, Maksym and Leadley, D. R. (David R.) (2014) Ultra high hole mobilities in a pure strained Ge quantum well. Thin Solid Films, Volume 557 . pp. 329-333. doi:10.1016/j.tsf.2013.10.118 ISSN 0040-6090.

Dumas, D. C. S., Gallacher, Kevin, Millar, R., MacLaren, I., Myronov, Maksym, Leadley, D. R. (David R.) and Paul, Douglas J. (Professor of Semiconductor Devices)‏ (2014) Silver antimony Ohmic contacts to moderately doped n-type germanium. Applied Physics Letters, Volume 104 (Number 16). Article number 162101. doi:10.1063/1.4873127 ISSN 0003-6951.

(2014) High quality single crystal Ge nano-membranes for opto-electronic integrated circuitry. Journal of Applied Physics, Volume 115 (Number 14). Article number 144307. doi:10.1063/1.4870807 ISSN 0021-8979.

Trushkevych, Oksana, Shah, V. A., Myronov, Maksym, Halpin, John E., Rhead, S., Prest, M. J. (Martin J.), Leadley, D. R. (David R.) and Edwards, R. S. (Rachel Sian) (2014) Laser-vibrometric ultrasonic characterization of resonant modes and quality factors of Ge membranes. Science and Technology of Advanced Materials, Volume 15 (Number 2). Article number 025004. doi:10.1088/1468-6996/15/2/025004 ISSN 1468-6996.

Hassan, A. H. A., Morris, R. J. H. (Richard J. H.), Mironov, O. A., Beanland, R., Walker, David, Huband, Steven, Dobbie, A. (Andrew), Myronov, Maksym and Leadley, D. R. (David R.) (2014) Anisotropy in the hole mobility measured along the [110] and [110] orientations in a strained Ge quantum well. Applied Physics Letters, Volume 104 (Number 13). Article number 132108. doi:10.1063/1.4870392 ISSN 0003-6951.

Wongwanitwattana, Chalermwat, Shah, V. A., Myronov, Maksym, Parker, Evan H. C., Whall, Terry E. and Leadley, D. R. (David R.) (2014) Precision plasma etching of Si, Ge, and Ge:P by SF6 with added O2. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Volume 32 (Number 3). Article number 031302. doi:10.1116/1.4868615 ISSN 0734-2101.

Zudov, M. A., Mironov, O. A., Ebner, Q. A., Martin, P. D., Shi, Q. and Leadley, D. R. (David R.) (2014) Observation of microwave-induced resistance oscillations in a high-mobility two-dimensional hole gas in a strained Ge/SiGe quantum well. Physical Review B (Condensed Matter and Materials Physics), Volume 89 (Number 12). Article number 125401. doi:10.1103/PhysRevB.89.125401 ISSN 1098-0121.

Myronov, Maksym, Morrison, Christopher, Halpin, John E., Rhead, S., Casteleiro, Catarina, Foronda, Jamie, Shah, V. A. and Leadley, D. R. (David R.) (2014) An extremely high room temperature mobility of two-dimensional holes in a strained Ge quantum well heterostructure grown by reduced pressure chemical vapor deposition. Japanese Journal of Applied Physics, Volume 53 (Number 4S). Article number 04EH02. doi:10.7567/JJAP.53.04EH02 ISSN 0021-4922.

Gammon, P. M., Fisher, Craig A., Shah, V. A., Jennings, M. R., Pérez-Tomás, Amador, Burrows, S. E. (Susan E.), Myronov, Maksym, Leadley, D. R. (David R.) and Mawby, P. A. (Philip A.) (2014) The cryogenic testing and characterisation of SiC diodes. Materials Science Forum, 778-780 . pp. 863-866. doi:10.4028/www.scientific.net/MSF.778-780.863 ISSN 1662-9752.

Mironov, O. A., Hassan, A. H. A., Uhlarz, M., Kiatgamolchai, S., Dobbie, A. (Andrew), Morris, R. J. H. (Richard J. H.), Halpin, John E., Rhead, S., Allred, Phil, Myronov, Maksym, Gabani, S., Berkutov, I. B. and Leadley, D. R. (David R.) (2014) New RP-CVD grown ultra-high performance selectively B-doped pure-Ge 20 nm QWs on (100)Si as basis material for post-Si CMOS technology. Physica Status Solidi (c), Volume 11 (Number 1). pp. 61-64. doi:10.1002/pssc.201300164 ISSN 18626351.

Patchett, David, Myronov, Maksym, Rhead, Stephen, Halpin, John E. and Leadley, D. R. (David R.) (2014) Challenges in epitaxial growth by RP-CVD of strained and relaxed GeSn epilayers on a Si substrate. In: 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014, Singapore, 2-4 Jun 2014 pp. 71-72. ISBN 9781479954278. doi:10.1109/ISTDM.2014.6874654

Nguyen, Van Huy, Myronov, Maksym, Allred, Phil, Halpin, John E., Dobbie, A. (Andrew) and Leadley, D. R. (David R.) (2014) Developments in germanium-on-silicon epitaxy by reduced pressure chemical vapor deposition. In: 15th International Conference on Ultimate Integration on Silicon (ULIS), 2014. Published in: International Conference on Ultimate Integration on Silicon pp. 121-124. doi:10.1109/ULIS.2014.6813913 ISSN 2330-5738.

Dumas, D. C. S., Gallacher, Kevin, Rhead, Stephen, Myronov, Maksym, Leadley, D. R. (David R.) and Paul, Douglas J. (2014) Ge/SiGe quantum confined Stark effect electro-absorption modulation with low voltage swing at λ = 1550 nm. Optics Express, Volume 22 (Number 16). 19284-19292 . doi:10.1364/OE.22.019284 ISSN 1094-4087.

Halpin, John E., Myronov, Maksym, Rhead, Stephen and Leadley, D. R. (David R.) (2014) N-type SiGe/Ge superlattice structures for terahertz emission. In: 7th International Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 , Singapore, 2-4 Jun 2014. Published in: Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International pp. 65-66. ISBN 9781479954278. doi:10.1109/ISTDM.2014.6874635

Allred, Phil, Myronov, Maksym, Rhead, S., Warburton, R., Intermite, G., Buller, G. and Leadley, D. R. (David R.) (2014) Optimization of epitaxial growth for thick Ge-on-Si structures used for single photon avalanche diode applications. In: 7th International Silicon-Germanium Technology and Device Meeting (ISTDM), 2014, Singapore, 02-04 Jun 2014. Published in: 7th International Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 pp. 67-68. ISBN 9781479954278. doi:10.1109/ISTDM.2014.6874639

Morrison, C., Myronov, Maksym, Foronda, Jamie, Casteleiro, Catarina, Halpin, John E., Rhead, S. D. and Leadley, D. R. (David R.) (2014) Quantum transport of a high mobility two dimensional hole gas in a strained Ge quantum well. In: 7th International Silicon-Germanium Technology and Device Meeting (2014 ISTDM), Singapore, 02-02 June 2014. Published in: 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) 2014 pp. 105-106. ISBN 9781479954278. doi:10.1109/ISTDM.2014.6874636

Myronov, Maksym, Rhead, Stephen, Colston, Gerard B. and Leadley, D. R. (David R.) (2014) RP-CVD growth of high carbon content Si1−xCx epilayers using disilane and trimethylsilane precursors. In: 2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM), Singapore, 2-4 Jun 2014. Published in: 2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) pp. 69-70. ISBN 9781479954278. doi:10.1109/ISTDM.2014.6874653

Myronov, Maksym, Morrison, Christopher, Halpin, John E., Rhead, Stephen, Foronda, Jamie and Leadley, D. R. (David R.) (2014) Revealing the high room and low temperature mobilities of 2D holes in a strained Ge quantum well heterostructures grown on a standard Si(001) substrate. In: Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International, Singapore, 2-4 Jun 2014. Published in: 2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) pp. 11-12. ISBN 9781479954278. doi:10.1109/ISTDM.2014.6874628

Shah, V. A., Trushkevych, Oksana, Myronov, Maksym, Rhead, Stephen, Halpin, John E., Edwards, R. S. (Rachel Sian) and Leadley, D. R. (David R.) (2014) Tensile strained Ge membranes. In: 15th International Conference on Ultimate Integration on Silicon (ULIS), 2014 , Stockholm, Sweden, 7-9 April 2014. Published in: International Conference on Ultimate Integration on Silicon pp. 137-140. doi:10.1109/ULIS.2014.6813917 ISSN 2330-5738.

Foronda, Jamie, Morrison, Christopher, Myronov, Maksym, Halpin, John E., Rhead, Stephen and Leadley, D. R. (David R.) (2014) Weak anti-localization behavior of high mobility 2D hole gas in a strained Ge QW heterostructure. In: Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International, Singapore, 2-4 Jun 2014. Published in: Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International pp. 111-112. ISBN 9781479954278. doi:10.1109/ISTDM.2014.6874644

2013

Gammon, P. M., Pérez-Tomás, Amador, Shah, V. A., Vavasour, O., Donchev, E., Pang, J. S., Myronov, Maksym, Fisher, Craig A., Jennings, M. R., Leadley, D. R. (David R.) and Mawby, P. A. (Philip A.) (2013) Modelling the inhomogeneous SiC Schottky interface. Journal of Applied Physics, Volume 114 (Number 22). Article number 223704. doi:10.1063/1.4842096 ISSN 0021-8979.

Warburton, Ryan E., Intermite, Giuseppe, Myronov, Maksym, Allred, Phil, Leadley, D. R. (David R.), Gallacher, Kevin, Paul, Douglas J. (Professor of Semiconductor Devices), Pilgrim, Neil J., Lever, Leon J. M., Ikonic, Zoran, Kelsall, Robert W., Huante-Ceron, Edgar, Knights, Andrew P. and Buller, G. S. (Gerald S.) (2013) Ge-on-Si single-photon avalanche diode detectors : design, modeling, fabrication, and characterization at wavelengths 1310 and 1550 nm. IEEE Transactions on Electron Devices, Volume 60 (Number 11). pp. 3807-3813. doi:10.1109/TED.2013.2282712 ISSN 0018-9383.

Burrows, Christopher W., Dobbie, A. (Andrew), Myronov, Maksym, Hase, Thomas P. A., Wilkins, Stuart B., Walker, Marc, Mudd, James J., Maskery, Ian, Lees, Martin R., McConville, C. F. (Chris F.), Leadley, D. R. (David R.) and Bell, Gavin R. (2013) Heteroepitaxial growth of ferromagnetic MnSb(0001) films on Ge/Si(111) virtual substrates. Crystal Growth & Design, Volume 13 (Number 11). pp. 4923-4929. doi:10.1021/cg4011136 ISSN 1528-7483.

Nguyen, Van Huy, Dobbie, A. (Andrew), Myronov, Maksym and Leadley, D. R. (David R.) (2013) High quality relaxed germanium layers grown on (110) and (111) silicon substrates with reduced stacking fault formation. Journal of Applied Physics, Volume 114 (Number 15). Article: 154306. doi:10.1063/1.4825130 ISSN 0021-8979.

Jasiński, Jakub, Łukasiak, Lidia, Jakubowski, Andrzej, Casteleiro, Catarina, Whall, Terry E., Parker, Evan H. C., Myronov, Maksym and Leadley, D. R. (David R.) (2013) Influence of series resistance determination on the extracted mobility in MOS transistors with Ge channel. In: Electron Technology Conference 2013, Ryn, Poland, April 16, 2013. Published in: SPIE Proceedings, 8902 doi:10.1117/12.2031269 ISSN 0277-786X.

Shah, V. A., Myronov, Maksym, Dobbie, A. (Andrew) and Leadley, D. R. (David R.) (2013) Introduction of terraces into a reverse linearly graded SiGe buffer on Si(001) substrate and their effect on the buffer's structural properties. ECS Journal of Solid State Science and Technology, Volume 2 (Number 3). Q40-Q44. doi:10.1149/2.018303jss ISSN 2162-8769.

Morris, R. J. H. (Richard J. H.), Dowsett, M. G., Beanland, R., Dobbie, A. (Andrew), Myronov, Maksym and Leadley, D. R. (David R.) (2013) O2+ probe-sample conditions for ultra low energy SIMS depth profiling of nanometre scale Si0.4Ge0.6/Ge quantum wells. Surface and Interface Analysis, Volume 45 (Number 1). pp. 348-351. doi:10.1002/sia.4963 ISSN 0142-2421.

Whall, Terry E., Prest, M. J. (Martin J.), Richardson-Bullock, J. S., Shah, V. A., Myronov, Maksym, Parker, Evan H. C., Leadley, D. R. (David R.), Prunnila, Mika, Gunnarsson, David, Brien, T., Mozonov, D. and Mauskopf, P. (2013) Cooltronics : a new low-temperature tunneling-technology based on Silicon. In: ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Coventry, UK, 19-21 March 2013. Published in: 14th International Conference on Ultimate Integration on Silicon pp. 1-4. ISBN 9781467348003. doi:10.1109/ULIS.2013.6523519

Intermite, Giuseppe, Warburton, Ryan E., Myronov, Maksym, Allred, Phil, Leadley, D. R. (David R.), Gallacher, Kevin, Paul, Douglas J. (Professor of Semiconductor Devices)‏ , Pilgrim, Neil J., Lever, Leon J. M., Ikonic, Zoran, Kelsall, Robert W. and Buller, G. S. (Gerald S.) (2013) Design and performance of a prototype mesa-geometry Ge-on-Si single-photon avalanche diode detector at 1310 nm and 1550 nm wavelengths. In: 2013 IEEE 10th International Conference on Group IV Photonics (GFP), , Seoul, 28-30 Aug 2013. Published in: IEEE International Conference on Group IV Photonics GFP pp. 132-133. doi:10.1109/Group4.2013.6644406

Chavez, E., Gomis-Bresco, J., Alzina, F., Reparaz, J. S., Shah, V. A., Myronov, Maksym, Leadley, D. R. (David R.) and Sotomayor Torres, C. M. (2013) Flexural mode dispersion in ultra-thin Ge membranes. In: ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Coventry, UK, 19-21 March 2013. Published in: 14th International Conference on Ultimate Integration on Silicon pp. 185-188. ISBN 9781467348003. doi:10.1109/ULIS.2013.6523515

Richardson-Bullock, J. S., Prest, M. J. (Martin J.), Prunnila, Mika, Gunnarsson, David, Shah, V. A., Dobbie, A. (Andrew), Myronov, Maksym, Morris, R. J. H. (Richard J. H.), Whall, Terry E., Parker, Evan H. C. and Leadley, D. R. (David R.) (2013) Hole-phonon energy loss rate in boron doped silicon. In: ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Coventry, UK, 19-21 March 2013. Published in: 14th International Conference on Ultimate Integration on Silicon pp. 213-215. ISBN 9781467348003. doi:10.1109/ULIS.2013.6523515

Gammon, P. M., Pérez-Tomás, Amador, Shah, V. A., Vavasour, O., Donchev, E., Pang, J. S., Myronov, Maksym, Fisher, Craig A., Jennings, M. R., Leadley, D. R. (David R.) and Mawby, P. A. (Philip A.) (2013) Modelling the inhomogeneous SiC Schottky interface. Journal of Applied Physics, 114 (22). p. 223704. 223704. doi:10.1063/1.4842096 ISSN 0021-8979.

Shah, V. A., Myronov, Maksym, Bawden, L., Prest, M. J. (Martin J.), Richardson-Bullock, J. S., Gammon, P. M., Rhead, S., Parker, Evan H. C., Whall, Terry E. and Leadley, D. R. (David R.) (2013) Novel fabrication technique for Ge membranes. In: ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Coventry, UK, 19-21 March 2013. Published in: 14th International Conference on Ultimate Integration on Silicon pp. 181-184. ISBN 9781467348003. doi:10.1109/ULIS.2013.6523519

Hassan, A. H. A., Mironov, O. A., Feher, A., Cizmar, E., Gabani, S., Morris, R. J. H. (Richard J. H.), Dobbie, A. (Andrew), Shah, V. A., Myronov, Maksym, Berkutov, I. B., Andrievskii, V. V. and Leadley, D. R. (David R.) (2013) Pure Ge quantum well with high hole mobility. In: ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Coventry, UK, 19-21 March 2013. Published in: 14th International Conference on Ultimate Integration on Silicon (ULIS) pp. 117-120. ISBN 9781467348003. doi:10.1109/ULIS.2013.6523527

Velha, Philippe, Dumas, Derek C., Gallacher, Kevin, Millar, Ross, Myronov, Maksym, Leadley, D. R. (David R.) and Paul, Douglas J. (Professor of Semiconductor Devices)‏ (2013) Strained germanium nanostructures on silicon emitting at >2.2 µm wavelength. In: 2013 IEEE 10th International Conference on Group IV Photonics (GFP), , Seoul, 28-30 Aug 2013. Published in: IEEE International Conference on Group IV Photonics GFP pp. 142-143. doi:10.1109/Group4.2013.6644411

Hassan, A. H. A., Mironov, O. A., Dobbie, A. (Andrew), Morris, J. H., Halpin, John E., Shah, V. A., Myronov, Maksym, Leadley, D. R. (David R.), Gabani, S., Feher, A., Cizmar, E., Andrievskii, V. V. and Berkutov, I. B. (2013) Structural and electrical characterization of SiGe heterostructures containing a pure Ge strained quantum well. In: 2013 IEEE 33rd International Scientific Conference Electronics and Nanotechnology, ELNANO 2013, Kiev, Ukraine, 16-19 April 2013. Published in: 2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO) pp. 51-55. ISBN 9781467346696. doi:10.1109/ELNANO.2013.6552021

Casteleiro, Catarina, Halpin, John E., Shah, V. A., Myronov, Maksym and Leadley, D. R. (David R.) (2013) Thermally grown GeO2 on epitaxial Ge on Si(001) substrate. In: ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Coventry, UK, 19-21 March 2013. Published in: 14th International Conference on Ultimate Integration on Silicon pp. 169-172. ISBN 9781467348003. doi:10.1109/ULIS.2013.6523519

Prest, M. J. (Martin J.), Zhao, Q. T, Muhonen, J. T., Shah, V. A., Richardson-Bullock, J. S., Prunnila, Mika, Gunnarsson, David, Whall, Terry E., Parker, Evan H. C. and Leadley, D. R. (David R.) (2013) Using platinum silicide as a superconductor for silicon electron coolers. In: ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Coventry, UK, 19-21 March 2013. Published in: 14th International Conference on Ultimate Integration on Silicon pp. 201-204. ISBN 9781467348003. doi:10.1109/ULIS.2013.6523519

2012

Gammon, P. M., Donchev, E., Pérez-Tomás, Amador, Shah, V. A., Pang, J. S., Petrov, P. K. (Peter K.), Jennings, M. R., Fisher, Craig A., Mawby, P. A. (Philip A.), Leadley, D. R. (David R.) and Alford, Neil McN. (2012) A study of temperature-related non-linearity at the metal-silicon interface. Journal of Applied Physics, Vol.112 . 114513 . doi:http://dx.doi.org/10.1063/1.4768718 ISSN 0021-8979.

Shah, V. A., Myronov, Maksym, Wongwanitwatana, Chalermwat, Bawden, Lewis, Prest, M. J. (Martin J.), Richardson-Bullock, J. S., Rhead, S., Parker, Evan H. C., Whall, Terry E. and Leadley, D. R. (David R.) (2012) Electrical isolation of dislocations in Ge layers on Si(001) substrates through CMOS-compatible suspended structures. Science and Technology of Advanced Materials, Volume 13 (Number 5). Article number 055002. doi:10.1088/1468-6996/13/5/055002 ISSN 1468-6996.

Dobbie, A. (Andrew), Myronov, Maksym, Morris, R. J. H. (Richard J. H.), Hassan, A. H. A., Prest, M. J. (Martin J.), Shah, V. A., Parker, Evan H. C., Whall, Terry E. and Leadley, D. R. (David R.) (2012) Ultra-high hole mobility exceeding one million in a strained germanium quantum well. Applied Physics Letters, Vol.101 (No.17). p. 172108. doi:10.1063/1.4763476 ISSN 0003-6951.

Berkutov, I. B., Andrievskii, V. V., Komnik, Y. F., Hackbarth, T., Leadley, D. R. (David R.) and Mironov, O. A. (2012) On the magnetoresistance maximum observed in the intermediate magnetic field region for the two-dimensional hole gas in a strained Si0.05Ge0.95 quantum well. Journal of Low Temperature Physics, Volume 168 (Number 5-6). pp. 285-296. doi:10.1007/s10909-012-0627-2 ISSN 0022-2291.

Dobbie, A. (Andrew), Nguyen, Van Huy, Myronov, Maksym, Whall, Terry E., Parker, Evan H. C. and Leadley, D. R. (David R.) (2012) Growth of smooth, low-defect germanium layers on (111) silicon via an intermediate islanding process. Applied Physics Express, Volume 5 (Number 7). 071301. doi:10.1143/APEX.5.071301 ISSN 1882-0778.

Riddet, C., Watling, J. R., Chan, K., Parker, Evan H. C., Whall, Terry E., Leadley, D. R. (David R.) and Asenov, A. (2012) Hole mobility in germanium as a function of substrate and channel orientation, strain, doping, and temperature. IEEE Transactions on Electron Devices, Volume 59 (Number 7). pp. 1878-1884. doi:10.1109/TED.2012.2194498 ISSN 0018-9383.

Morris, R. J. H. (Richard J. H.), Dowsett, M. G., Beanland, R., Dobbie, A. (Andrew), Myronov, Maksym and Leadley, D. R. (David R.) (2012) Overcoming low Ge ionization and erosion rate variation for quantitative ultralow energy secondary ion mass spectrometry depth profiles of Si1–xGex/Ge quantum well structures. Analytical Chemistry, Vol.84 (No.5). pp. 2292-2298. doi:10.1021/ac202929x ISSN 0003-2700.

Shah, V. A., Dobbie, A. (Andrew), Myronov, Maksym and Leadley, D. R. (David R.) (2012) Reverse graded strain relaxed SiGe buffers for CMOS and optoelectronic integration. Thin Solid Films, Vol.520 (No.8). pp. 3227-3231. doi:10.1016/j.tsf.2011.10.102 ISSN 0040-6090.

Gallacher, Kevin, Velha, P., Paul, Douglas J. (Professor of Semiconductor Devices)‏ , MacLaren, I., Myronov, Maksym and Leadley, D. R. (David R.) (2012) Ohmic contacts to n-type germanium with low specific contact resistivity. Applied Physics Letters, Vol.100 (No.2). 022113. doi:10.1063/1.3676667 ISSN 0003-6951.

Walther, Thomas, Norris, David J., Qiu, Yang, Dobbie, A. (Andrew), Myronov, Maksym and Leadley, D. R. (David R.) (2012) The Stranski-Krastanow transition in SiGe epitaxy investigated by scanning transmission electron microscopy. Physica Status Solidi (a), Volume 210 (Number 1). pp. 187-190. doi:10.1002/pssa.201200363 ISSN 0031-8965.

Myronov, Maksym, Shah, V. A., Rhead, S. and Leadley, D. R. (David R.) (2012) Epitaxial growth of tensile strained SiB alloy on a Si substrate. In: 6th International Silicon-Germanium Technology and Device Meeting, ISTDM 2012, Berkeley, CA, USA, 4-6 June 2012. Published in: 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings (Article number 6222493). pp. 132-133. ISBN 9781457718625. doi:10.1109/ISTDM.2012.6222493

(2012) High performance silicon optical modulators. In: Nanophotonics and Micro/Nano Optics, Beijing, China, 5 Nov 2012. Published in: Proceedings of SPIE - International Society for Optical Engineering, Volume 8564 Article number 85640H. doi:10.1117/12.2001296 ISSN 0277-786X.

Berkutov, I. B., Andrievskii, V. V., Komnik, Yu. F., Kolesnichenko, Yu. A., Morris, R. J. H. (Richard J. H.), Leadley, D. R. (David R.) and Mironov, O. A. (2012) Magnetotransport studies of SiGe-based p-type heterostructures : problems with the determination of effective mass. Low Temperature Physics, Volume 38 (Number12). Article number 1145. doi:10.1063/1.4770520 ISSN 1063-777X.

Lever, L., Ikonić, Z., Valavanis, A., Kelsall, Robert W., Myronov, Maksym, Leadley, D. R. (David R.), Hu, Y., Owens, N., Gardes, F. Y. and Reed, G. T. (2012) Optical absorption in highly strained Ge/SiGe quantum wells : the role of Γ→Δ scattering. Journal of Applied Physics, Volume 112 (Number 12). Article number 123105. doi:10.1063/1.4768935 ISSN 0021-8979.

Drichko, I. L., Smirnov, I. Yu., Suslov, A. V., Mironov, O. A. and Leadley, D. R. (David R.) (2012) Quantum hall ferromagnetic-paramagnetic transition in p-Si/SiGe/Si quantum wells in a tilted magnetic field. Journal of Physics: Conference Series, Volume 400 (Number 4). Article number 042005. doi:10.1088/1742-6596/400/4/042005 ISSN 1742-6596.

Dobbie, A. (Andrew), Nguyen, Van H., Morris, R. J. H. (Richard J. H.), Liu, Xue-Chao, Myronov, Maksym and Leadley, D. R. (David R.) (2012) Thermal stability of thin compressively strained Ge surface channels grown on relaxed Si0.2Ge0.8 reverse-graded buffers. Journal of The Electrochemical Society, Vol.159 (No.5). H490-H496. doi:10.1149/2.063205jes ISSN 0013-4651.

Dobbie, A. (Andrew), Myronov, Maksym, Morris, R. J. H. (Richard J. H.), Prest, M. J. (Martin J.), Richardson-Bullock, J. S., Hassan, A. H. A., Shah, V. A., Parker, Evan H. C., Whall, Terry E. and Leadley, D. R. (David R.) (2012) Ultra-high Hall mobility (1 x 106 cm2V-1S-1) in a two-dimensional hole gas in a strained germanium quantum well grown by reduced pressure CVD. In: 6th International Silicon-Germanium Technology and Device Meeting, ISTDM 2012, Berkeley, CA, USA, 4-6 June 2012. Published in: 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings (Article number 6222451). pp. 48-49. ISBN 9781457718625. doi:10.1109/ISTDM.2012.6222451

Nguyen, Van Huy, Dobbie, A. (Andrew), Myronov, Maksym and Leadley, D. R. (David R.) (2012) Understanding the role of the low temperature seed layer in the growth of low defect relaxed germanium layers on (111) silicon by reduced pressure CVD. In: 6th International Silicon-Germanium Technology and Device Meeting, ISTDM 2012, Berkeley, CA, USA, 4-6 June 2012. Published in: 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings Article number 622250. ISBN 9781457718625. doi:10.1109/ISTDM.2012.6222501

2011

Prest, M. J. (Martin J.), Muhonen, Juha, Prunnila, Mika, Gunnarsson, David, Shah, V. A., Richardson-Bullock, J. S., Dobbie, A. (Andrew), Myronov, Maksym, Morris, R. J. H. (Richard J. H.), Whall, Terry E., Parker, Evan H. C. and Leadley, D. R. (David R.) (2011) Strain enhanced electron cooling in a degenerately doped semiconductor. Applied Physics Letters, Vol.99 (No.25). Article: 251908. doi:10.1063/1.3670330 ISSN 0003-6951.

Thomas, S. M., Prest, M. J. (Martin J.), Whall, Terry E., Leadley, D. R. (David R.), Toniutti, P., Conzatti, F., Esseni, D., Donetti, L., Gámiz, F., Lander, R. J. P., Vellianitis, G., Hellström, P.-E. and Östling, M. (2011) On the role of Coulomb scattering in hafnium-silicate gated silicon n and p-channel metal-oxide-semiconductor-field-effect-transistors. Journal of Applied Physics, Vol.110 (No.12). Article: 124503. doi:10.1063/1.3669490 ISSN 0021-8979.

Lever, L., Hu, Youfang, Myronov, Maksym, Liu, Xianping, Owens, N. (Nathan), Gardes, F. Y., Marko, I. P., Sweeney, S. J., Ikonić, Z., Leadley, D. R. (David R.), Reed, G. T. and Kelsall, Robert W. (2011) Modulation of the absorption coefficient at 13 μm in Ge/SiGe multiple quantum well heterostructures on silicon. Optics Letters, Vol.36 (No.21). pp. 4158-4160. doi:10.1364/OL.36.004158 ISSN 0146-9592.

Donetti, L., Gámiz, F., Thomas, S., Whall, Terry E., Leadley, D. R. (David R.), Hellström, P.-E., Malm, G. and Östling, Mikael (2011) Hole effective mass in silicon inversion layers with different substrate orientations and channel directions. Journal of Applied Physics, Vol.110 (No.6). doi:10.1063/1.3639281 ISSN 0021-8979.

Simoen, E. (Eddy), Mitard, J., De Jaeger, B., Eneman, G., Dobbie, A. (Andrew), Myronov, Maksym, Whall, Terry E., Leadley, D. R. (David R.), Meuris, M., Hoffmann, T. and Claeys, C. (2011) Low-frequency noise characterization of strained germanium pMOSFETs. IEEE Transactions on Electron Devices, Vol.58 (No.9). pp. 3132-3139. doi:10.1109/TED.2011.2160679 ISSN 0018-9383.

Shah, V. A., Dobbie, A. (Andrew), Myronov, Maksym and Leadley, D. R. (David R.) (2011) High quality relaxed Ge layers grown directly on a Si(001) substrate. Solid-State Electronics, Vol.62 (No.1). pp. 189-194. doi:10.1016/j.sse.2011.03.005 ISSN 0038-1101.

Zhylik, Alexei, Benediktovich, A., Ulyanenkov, Alexander P., Guerault, H., Myronov, Maksym, Dobbie, A. (Andrew), Leadley, D. R. (David R.) and Ulyanenkova, Tatjana (2011) High-resolution x-ray diffraction investigation of relaxation and dislocations in SiGe layers grown on (001), (011), and (111) Si substrates. Journal of applied physics, 109 (12). 123714. doi:10.1063/1.3597828 ISSN 0021-8979.

Liu, Xue-Chao, Myronov, Maksym, Dobbie, A. (Andrew), Nguyen, Van H. and Leadley, D. R. (David R.) (2011) Non-destructive thickness characterization of Si based heterostructure by X-ray diffraction and reflectivity. Solid-State Electronics, Vol.60 (No.1). pp. 42-45. doi:10.1016/j.sse.2011.01.036 ISSN 0038-1101.

Muhonen, Juha, Prest, M. J. (Martin J.), Prunnila, Mika, Gunnarsson, David, Shah, V. A., Dobbie, A. (Andrew), Myronov, Maksym, Morris, R. J. H. (Richard J. H.), Whall, Terry E., Parker, Evan H. C. and Leadley, D. R. (David R.) (2011) Strain dependence of electron-phonon energy loss rate in many-valley semiconductors. Applied Physics Letters, Vol.98 (No.18). p. 182103. doi:10.1063/1.3579524 ISSN 0003-6951.

(2011) Investigation of strain engineering in FinFETs comprising experimental analysis and numerical simulations. IEEE Transactions on Electron Devices, Vol.58 (No.6). pp. 1583-1593. doi:10.1109/TED.2011.2119320 ISSN 0018-9383.

Liu, Xue-Chao, Myronov, Maksym, Dobbie, A. (Andrew), Nguyen, Van H. and Leadley, D. R. (David R.) (2011) Accuracy of thickness measurement for Ge epilayers grown on SiGe/Ge/Si(100) heterostructure by x-ray diffraction and reflectivity. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol.29 (No.1). 011010. doi:10.1116/1.3530594 ISSN 1071-1023.

Drichko, I. L., Smirnov, I. Yu., Suslov, A. V. and Leadley, D. R. (David R.) (2011) Acoustic studies of ac conductivity mechanisms in n-GaAs/Al_{x}Ga_{1-x}As in the integer and fractional quantum Hall effect regime. Physical Review B (Condensed Matter and Materials Physics), Vol.83 (No.23). article no. 235318 . doi:10.1103/PhysRevB.83.235318 ISSN 1098-0121.

Myronov, Maksym, Liu, Xue-Chao, Dobbie, A. (Andrew) and Leadley, D. R. (David R.) (2011) Control of epilayer thickness during epitaxial growth of high Ge content strained Ge/SiGe multilayers by RP-CVD. Journal of Crystal Growth, Vol.318 (No.1). pp. 337-340. doi:10.1016/j.jcrysgro.2010.10.133 ISSN 0022-0248.

Simoen, E. (Eddy), Mitard, J., De Jaeger, B., Eneman, G., Dobbie, A. (Andrew), Myronov, Maksym, Leadley, D. R. (David R.), Meuris, Marc, Hoffmann, T. and Claeys, C. (2011) Defect-related excess low-frequency noise in Ge-on-Si pMOSFETs. IEEE Electron Device Letters, Vol.32 (No.1). pp. 87-89. doi:10.1109/LED.2010.2089968 ISSN 0741-3106.

Shah, V. A., Dobbie, A. (Andrew), Myronov, Maksym and Leadley, D. R. (David R.) (2011) Effect of layer thickness on structural quality of Ge epilayers grown directly on Si(001). Thin Solid Films, Vol.519 (No.22). pp. 7911-7917. doi:10.1016/j.tsf.2011.06.022 ISSN 0040-6090.

(2011) High hole mobility in 65 nm strained Ge p-Channel field effect transistors with HfO2Gate dielectric. Japanese Journal of Applied Physics, Vol.50 (No.4). article no. 04DC17. doi:10.1143/JJAP.50.04DC17 ISSN 0021-4922.

Liu, Xue-Chao, Myronov, Maksym, Dobbie, A. (Andrew), Morris, R. J. H. (Richard J. H.) and Leadley, D. R. (David R.) (2011) High-quality Ge/Si0.4Ge0.6multiple quantum wells for photonic applications : growth by reduced pressure chemical vapour deposition and structural characteristics. Journal of Physics D : Applied Physics, Vol.44 (No.5). article no. 055102. doi:10.1088/0022-3727/44/5/055102 ISSN 0022-3727.

Zhylik, A., Rinaldi, F., Myronov, Maksym, Saito, K., Menzel, S., Dobbie, A. (Andrew), Leadley, D. R. (David R.), Ulyanenkova, T., Feranchuk, I. D. (Ilya D.) and Ulyanenkov, Alexander P. (2011) High-resolution reciprocal space mapping of distributed Bragg reflectors and virtual substrates. Physica Status Solidi. A: Applications and Materials Science , Vol.208 (No.11). pp. 2582-2586. doi:10.1002/pssa.201184260 ISSN 1862-6300.

2010

Liu, Xue-Chao and Leadley, D. R. (David R.) (2010) Silicon-germanium interdiffusion in strained Ge/SiGe multiple quantum well structures. Journal of Physics D : Applied Physics, Vol.43 (No.50). article no. 505303 . doi:10.1088/0022-3727/43/50/505303 ISSN 0022-3727.

Shen, C., Trypiniotis, T., Lee, K. Y., Holmes, S. N., Mansell, Rhodri, Husain, Muhammad Khaled, Shah, V. A., Li, Xiaoli V., Kurebayashi, H., Farrer, I., de Groot, C. H., Leadley, D. R. (David R.), Bell, Gavin R., Parker, Evan H. C., Whall, Terry E., Ritchie, David A. and Barnes, Crispin H. W. (2010) Spin transport in germanium at room temperature. Applied Physics Letters, Vol.97 (No.16). pp. 162104-1. doi:10.1063/1.3505337 ISSN 0003-6951.

Drichko, I. L., Smirnov, I. Yu., Suslov, A. V., Mironov, O. A. and Leadley, D. R. (David R.) (2010) Magnetoresistivity and acoustoelectronic effects in a tilted magnetic field in p-Si/SiGe/Si structures with an anisotropic g factor. Journal of experimental and Theoretical Physics, Vol.111 (No.3). pp. 495-502. doi:10.1134/S1063776110090189 ISSN 1063-7761.

Dobbie, A. (Andrew), Myronov, Maksym, Liu, Xue-Chao, Nguyen, Van H., Parker, E. H. C. and Leadley, D. R. (David R.) (2010) Effect of growth rate on the threading dislocation density in relaxed SiGe buffers grown by reduced pressure chemical vapour deposition at high temperature. Semiconductor Science and Technology, Vol.25 (No. 8). article no. 085007 . doi:10.1088/0268-1242/25/8/085007 ISSN 0268-1242.

Mironov, O. A., Goiran, M., Galibert, J., Kozlov, D. V., Ikonnikov, A. V., Spirin, K. E., Gavrilenko, V. I., Isella, G., Kummer, M., von Känel, H., Drachenko, O., Helm, Manfred, Wosnitza, Joachim, Morris, R. J. H. and Leadley, D. R. (David R.) (2010) Cyclotron resonance of extremely conductive 2D holes in high Ge content strained heterostructures. Journal of Low Temperature Physics, Vol.159 (No.1-2). pp. 216-221. doi:10.1007/s10909-009-0147-x ISSN 0022-2291.

Leadley, D. R. (David R.), Andrievskii, V. V., Berkutov, I. B., Komnik, Y. F., Hackbarth, T. and Mironov, O. A. (2010) Quantum interference effects in p-Si1-x Ge (x) quantum wells. In: 9th International Conference on Research in High Magnetic Fields (RHMF 2009), Dresden, Germany, July 22-25, 2009. Published in: Journal of Low Temperature Physics, Vol.159 (No.1-2). pp. 230-233. doi:10.1007/s10909-009-0120-8 ISSN 0022-2291.

Shah, V. A., Dobbie, A. (Andrew), Myronov, Maksym and Leadley, D. R. (David R.) (2010) Reverse graded SiGe/Ge/Si buffers for high-composition virtual substrates. Journal of Applied Physics, Vol.107 (No.6). article no. 064304. doi:10.1063/1.3311556 ISSN 0021-8979.

Leadley, D. R. (David R.), Andrievskii, V. V., Berkutov, Igor B., Komnik, Yuri F., Hackbarth, T. and Mironov, O. A. (2010) Quantum interference effects in p-Si1−xGex quantum wells. Journal of Low Temperature Physics, Vol.159 (No.1-2). pp. 230-233. doi:10.1007/s10909-009-0120-8 ISSN 0022-2291.

Myronov, Maksym, Dobbie, A. (Andrew), Shah, V. A., Liu, Xue-Chao, Nguyen, Van H. and Leadley, D. R. (David R.) (2010) High quality strained Ge epilayers on a Si0.2Ge0.8/Ge/Si(100) global strain-tuning platform. Electrochemical and Solid State Letters, Vol.13 (No.11). H388-H390. doi:10.1149/1.3482159 ISSN 1099-0062.

Myronov, Maksym, Shah, V. A., Dobbie, A. (Andrew), Liu, Xue-Chao, Nguyen, Van H., Leadley, D. R. (David R.) and Parker, Evan H. C. (2010) Highly strained Si epilayers grown on SiGe/Si(100) virtual substrate by reduced pressure chemical vapour deposition. physica status solidi (c), Vol.8 (No.3). pp. 952-955. doi:10.1002/pssc.201000255 ISSN 1862-6351.

Leadley, D. R. (David R.), Dobbie, A. (Andrew), Shah, V. A. and Parsons, J. (2010) Introduction to novel materials for nanoscale CMOS. In: Balestra, Francis, (ed.) Nanoscale CMOS : innovative materials, modeling, and characterization. London ; Hoboken, NJ: ISTE ; Wiley, pp. 3-22. ISBN 9781848211803

Dobbie, A. (Andrew), Myronov, Maksym, Liu, Xue-Chao, Nguyen, Van Huy, Parker, Evan H. C. and Leadley, D. R. (David R.) (2010) Investigation of the thermal stability of strained Ge layers grown at low temperature by reduced-pressure chemical vapour deposition on Si0.2Ge0.8 relaxed buffers. In: 2010 MRS Spring Meeting & Exhibit, San Francisco, CA, 5-10 Apr 2010. Published in: MRS Proceedings, Vol.1252 pp. 104-106. doi:10.1557/PROC-1252-I04-06 ISSN 1946-4274.

Leadley, D. R. (David R.), Dobbie, A. (Andrew), Myronov, Maksym, Shah, V. A. and Parker, Evan H. C. (2010) Strained Si and Ge channels. In: Balestra, Francis, (ed.) Nanoscale CMOS : innovative materials, modeling, and characterization. London ; Hoboken, NJ: ISTE ; Wiley, pp. 69-126. ISBN 9781848211803

Norris, D. J., Walther, T. (Thomas), Cullis, A. G., Myronov, Maksym, Dobbie, A. (Andrew), Whall, Terry E., Parker, Evan H. C., Leadley, D. R. (David R.), Jaeger, B. De., Lee, W., Meuris, Marc, Watling, J. R. and Asenov, A. (Asen) (2010) TEM analysis of Ge-on-Si MOSFET structures with HfO2dielectric for high performance PMOS device technology. Journal of Physics : Conference Series, Vol.209 . article no. 012061. doi:10.1088/1742-6596/209/1/012061 ISSN 1742-6596.

Norris, D. J., Ross, I. M., Cullis, A. G., Walther, T. (Thomas), Myronov, Maksym, Dobbie, A. (Andrew), Whall, Terry E., Parker, Evan H. C., Leadley, D. R. (David R.), Jaeger, B. De., Lee, W. C. and Meuris, Marc (2010) TEM analysis of Si-passivated Ge-on-Si MOSFET structures for high performance PMOS device technology. Journal of Physics : Conference Series, Vol.241 . article no. 012044. doi:10.1088/1742-6596/241/1/012044 ISSN 1742-6596.

2009

Thomas, Stephen M., Whall, Terry E., Parker, Evan H. C., Leadley, D. R. (David R.), Lander, Robert James Pascoe, Vellianitis, G. and Watling, J. R. (2009) Improved effective mobility extraction in MOSFETs. Solid-State Electronics, Vol.53 (No.12). pp. 1252-1256. doi:10.1016/j.sse.2009.09.014 ISSN 0038-1101.

Drichko, I. L., Smirnov, I. Yu., Suslov, A. V., Mironov, O. A. and Leadley, D. R. (David R.) (2009) Magnetoresistance in dilute p-Si/SiGe in parallel and tilted magnetic fields. Annalen der Physik, Vol.18 (No.12 (Sp. Iss. SI)). pp. 939-943. doi:10.1002/andp.200910380 ISSN 0003-3804.

Drichko, I. L., Smirnov, I. Yu., Suslov, A. V., Mironov, O. A. and Leadley, D. R. (David R.) (2009) Large magnetoresistance of a dilute p-Si/SiGe/Si quantum well in a parallel magnetic field. Physical Review B (Condensed Matter and Materials Physics), Vol.79 (No.20). article no. 205310. doi:10.1103/PhysRevB.79.205310 ISSN 1098-0121.

Myronov, Maksym, Leadley, D. R. (David R.) and Shiraki, Y. (2009) High mobility holes in a strained Ge quantum well grown on a thin and relaxed Si0.4Ge0.6/LT-Si0.4Ge0.6/Si(001) virtual. Applied Physics Letters, Vol.94 (No.9). 092108. doi:10.1063/1.3090034 ISSN 0003-6951.

Berkutov, I. B., Andrievskii, V. V., Komnik, Yu. F., Mironov, O. A., Mironov, M. and Leadley, D. R. (David R.) (2009) Shubnikov-de Haas oscillations of the conductivity of a two-dimensional gas in quantum wells based on germanium and silicon. Determination of the effective mass and g factor. Low Temperature Physics, Vol.35 (No.2). pp. 141-145. doi:10.1063/1.3075945 ISSN 1063-777X.

Thomas, S. M., Whall, Terry E., Parker, Evan H. C., Leadley, D. R. (David R.), Lander, R. J. P., Vellianitis, G. and Watling, J. R. (2009) Accurate effective mobility extraction in SOI MOS transistors. In: 10th International Conference on Ultimate Integration on Silicon, Aachen, Germany, March 18-20, 2009. Published in: ULIS 2009: 10th International Conference on Ultimate Integration of Silicon pp. 31-34. ISBN 978-1-4244-3705-4. doi:10.1109/ULIS.2009.4897532

(2009) Experimental and physics-based modeling assessment of strain induced mobility enhancement in FinFETs. pp. 1-4. doi:10.1109/IEDM.2009.5424419

2008

Shah, V. A., Dobbie, A., Myranov, Maksym, Fulgoni, D. J. F., Nash, Lee John and Leadley, D. R. (David R.) (2008) Reverse graded relaxed buffers for high Ge content SiGe virtual substrates. Applied Physics Letters, Vol.93 (No.19). p. 192103. doi:10.1063/1.3023068 ISSN 0003-6951.

Parsons, J., Beer, C. S., Leadley, D. R. (David R.), Capewell, Adam Daniel and Grasby, T. J. (2008) Evaluation of relaxation and misfit dislocation blocking in strained silicon on virtual substrates. Thin Solid Films, Vol.517 (No.1). pp. 17-19. doi:10.1016/j.tsf.2008.08.026 ISSN 0040-6090.

(2008) NANOSIL network of excellence-silicon-based nanostructures and nanodevices for long-term nanoelectronics applications. Materials Science in Semiconductor Processing, Vol.11 (No.5-6 Sp. Iss. SI). pp. 148-159. doi:10.1016/j.mssp.2008.09.017 ISSN 1369-8001.

Parsons, Jonathan, Morris, R. J. H., Leadley, D. R. (David R.), Parker, Evan H. C., Fulgoni, D. J. F. and Nash, Lee John (2008) Relaxation of strained silicon on Si0.5Ge0.5 virtual substrates. Applied Physics Letters, Vol.93 (No.7). 072108. doi:10.1063/1.2975188 ISSN 0003-6951.

Berkutov, I. B., Andrievskii, V. V., Komnik, Yu F., Leadley, D. R. (David R.), Myronov, Maksym, von Kanel, H. and Mironov, O. A. (2008) A new method of investigating the quantum channel surface. Journal of Physics-Condensed Matter, Vol.20 (No.22). Article no. 224024 . doi:10.1088/0953-8984/20/22/224024 ISSN 0953-8984.

Driussi, F., Esseni, D. (David), Selmi, L. (Luca), Hellström, P.-E., Malm, G., Hallstedt, J., Östling, Mikael, Grasby, T. J., Leadley, D. R. (David R.) and Mescot, X. (2008) On the electron mobility enhancement in biaxially strained Si MOSFETs. Solid-State Electronics, Vol.52 (No.4). pp. 498-505. doi:10.1016/j.sse.2007.10.033 ISSN 0038-1101.

Raskin, J.-P., Pearman, D. J., Pailloncy, G., Larson, J. M., Snyder, J., Leadley, D. R. (David R.) and Whall, Terry E. (2008) High-frequency performance of Schottky source/drain silicon pMOS devices. IEEE Electron Device Letters, Vol.29 (No.4). pp. 396-398. doi:10.1109/LED.2008.918250 ISSN 0741-3106.

Drichko, I. L., Dyakonov, A. M., Smirnov, I. Yu., Suslov, A. V., Galperin, Y. M., Vinokur, Valerii M., Myronov, Maksym, Mironov, O. A. and Leadley, D. R. (David R.) (2008) Magnetotransport in low-density p-Si/SiGe heterostructures : from metal through hopping insulator to Wigner glass. Physical Review B (Condensed Matter and Materials Physics), Vol.77 (No.8). article no. 085327. doi:10.1103/PhysRevB.77.085327 ISSN 1098-0121.

Beer, C. (Chris), Whall, Terry E., Morris, R. J. H. (Richard J. H.), Parker, Evan H. C. and Leadley, D. R. (David R.) (2008) Anomalous Ge diffusion effects during Ge-condensation. In: 9th International Conference on Ultimate Integration on Silicon, Univ Udine, Udine, Italy, Mar 13-14, 2008. Published in: ULIS 2008: Proceedings of the 9th International Conference on Ultimate Integration on Silicon pp. 207-210. ISBN 978-1-4244-1729-2. doi:10.1109/ULIS.2008.4527175

Dobbie, A. (Andrew), De Jaeger, B., Meuris, Marc, Whall, Terry E., Parker, Evan H. C. and Leadley, D. R. (David R.) (2008) Channel backscattering characteristics of high performance germanium pMOSFETs. In: 9th International Conference on Ultimate Integration on Silicon, Univ Udine, Udine, Italy, Mar 13-14, 2008. Published in: Proceedings of the 9th International Conference on Ultimate Integration on Silicon pp. 7-10. ISBN 978-1-4244-1729-2. doi:10.1109/ULIS.2008.4527129

Parsons, J., Morris, R. J. H. (Richard J. H.), Leadley, D. R. (David R.) and Parker, Evan H. C. (2008) Relaxation of strained silicon on Si0.5Ge0.5 virtual substrates. In: 9th International Conference on Ultimate Integration on Silicon, Univ Udine, Udine, Italy, 13-14 Mar 2008. Published in: ULIS 2008 : Proceedings of the 9th International conference on ultimate integration on silicon pp. 211-214. ISBN 978-1-4244-1729-2. doi:10.1109/ULIS.2008.4527176

Beer, C. (Chris), Whall, Terry E., Parker, Evan H. C., Leadley, D. R. (David R.), De Jaeger, B., Nicholas, G., Zimmerman, P. and Meuris, Marc (2008) The role of interface states in the low temperature mobility of hafnium-oxide gated Ge-pMOSFETs and the effect of a hydrogen anneal. In: 9th International Conference on Ultimate Integration on Silicon, Univ Udine, Udine, Italy, Mar 13-14, 2008. Published in: ULIS 2008: Proceedings of the 9th International Conference on Ultimate Integration on Silicon pp. 19-22. ISBN 978-1-4244-1729-2. doi:10.1109/ULIS.2008.4527132

2007

Beer, C. (Chris), Whall, Terry E., Parker, Evan H. C., Leadley, D. R. (David R.), De Jaeger, Brice, Nicholas, Gareth, Zimmerman, Paul, Meuris, Marc, Szostak, Slawomir, Gluszko, Grzegorz and Lukasiak, Lidia (2007) Low temperature mobility in hafnium-oxide gated germanium p-channel metal-oxide-semiconductor field-effect transistors. Applied Physics Letters, Vol.91 (No.26). p. 263512. doi:10.1063/1.2828134 ISSN 0003-6951.

Parsons, J., Parker, Evan H. C., Leadley, D. R. (David R.), Morris, R. J. H. (Richard J. H.), Grasby, T. J. and Capewell, Adam Daniel (2007) Erratum: Misfit strain relaxation and dislocation formation in supercritical strained silicon on virtual substrates [ Appl. Phys. Lett. 91, 063127 (2007) ]. Applied Physics Letters, Vol.91 (No.18). doi:10.1063/1.2798244

Parsons, Jonathan, Parker, Evan H. C., Leadley, D. R. (David R.), Grasby, T. J. and Capewell, Adam Daniel (2007) Misfit strain relaxation and dislocation formation in supercritical strained silicon on virtual substrates. Applied Physics Letters, Vol.91 (No.6). 063127. doi:10.1063/1.2769751 ISSN 0003-6951.

2006

Berkutov, I. B., Komnik, Yu. F., Andrievskii, V. V., Mironov, O. A., Myronov, Maksym and Leadley, D. R. (David R.) (2006) Weak localization and charge-carrier interaction effects in a two-dimensional hole gas in a germanium quantum well in a SiGe/Ge/SiGe heterostructure. Low Temperature Physics, Volume 32 (Number 7). pp. 683-688. doi:10.1063/1.2216282 ISSN 1063-777X.