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Number of items: 7.
Donnellan, B. T., Roberts, G. J., Mawby, P. A. (Philip A.) and Bryant, Angus T. (2012) Modelling of current sharing in paralleled current limiting superjunction MOSFETs with common gate drives. Microelectronics Reliability, Vol.52 (No.3). pp. 497-502. doi:10.1016/j.microrel.2011.12.007 ISSN 0026-2714.
Gammon, P. M., Pérez-Tomás, Amador, Jennings, M. R., Shah, V. A., Boden, S. A., Davis, M. C., Burrows, S. E., Wilson, Neil R., Roberts, G. J., Covington, James A. and Mawby, P. A. (2010) Interface characteristics of n-n and p-n Ge/SiC heterojunction diodes formed by molecular beam epitaxy deposition. Journal of Applied Physics, Vol.107 (No.12). p. 124512. doi:10.1063/1.3449057 ISSN 0021-8979.
Gammon, P. M., Pérez-Tomás, Amador, Jennings, M. R., Roberts, G. J., Shah, V. A., Covington, James A. and Mawby, P. A. (2010) Germanium-silicon carbide heterojunction diodes - a study in device characteristics with increasing layer thickness and deposition temperature. In: 13th International Conference on Silicon Carbide and Related Materials, Nurnberg, Germany, October 11-16, 2009. Published in: Materials Science Forum, Vol.645-648 pp. 889-892. ISBN *****************. doi:10.4028/www.scientific.net/MSF.645-648.889 ISSN 0255-5476.
Gammon, P. M., Pérez-Tomás, Amador, Shah, V. A., Roberts, G. J., Jennings, M. R., Covington, James A. and Mawby, P. A. (2009) Analysis of inhomogeneous Ge/SiC heterojunction diodes. Journal of Applied Physics, Vol.106 (No.9). Article no. 093708. doi:10.1063/1.3255976 ISSN 0021-8979.
Gammon, P. M., Pérez-Tomás, Amador, Jennings, M. R., Roberts, G. J., Davis, M. C., Shah, V. A., Burrows, S. E., Wilson, Neil R., Covington, James A. and Mawby, P. A. (2008) Characterization of n-n Ge/SiC heterojunction diodes. Applied Physics Letters, Vol.93 (No.11). Article: 112104. doi:10.1063/1.2987421 ISSN 0003-6951.
Pérez-Tomás, Amador, Jennings, M. R., Gammon, P. M., Roberts, G. J., Mawby, P. A. (Philip A.), Millan, J., Godignon, P., Montserrat, J. and Mestres, N. (2008) SiC MOSFETs with thermally oxidized Ta2Si stacked on SiO2 as high-k gate insulator. Microelectronic Engineering, Volume 85 (Number 4). pp. 704-709. doi:10.1016/j.mee.2007.12.073 ISSN 0167-9317.
Bryant, A. T., Roberts, G. J., Walker, A. and Mawby, P. A. (Philip A.) (2007) Fast inverter loss simulation and silicon carbide device evaluation for hybrid electric vehicle drives. In: 4th Power Conversion Conference (PCC-Nagoya 2007), Nagoya, Japan, 2-5 Apr 2007. Published in: 2007 Power Conversion Conference - Nagoya, Vols 1-3 pp. 1017-1024. ISBN 9781424408436.
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