The Library
Browse by Warwick Author
Up a level |
Jump to: Advantage West Midlands | Advantage West Midlands (AWM) | Advantage West Midlands (AWM) | Birmingham Science City | Engineering and Physical Sciences Research Council (EPSRC) | European Regional Development Fund (ERDF) | European Union (EU) | Guo jia zi ran ke xue ji jin wei yuan hui (China) [National Natural Science Foundation of China] (NSFC) | SEMATECH (Organization) | Science City Research Alliance | Seventh Framework Programme (European Commission) (FP7) | Sixth Framework Programme (European Commission) (FP6) | University of Warwick | Warwick-Birmingham Science City Alliance Initiative
Number of items: 39.
Advantage West Midlands
Alatise, Olayiwola M., Parker-Allotey, Nii-Adotei, Hamilton, Dean P. and Mawby, P. A. (Philip A.) (2012) The impact of parasitic inductance on the performance of silicon-carbide Schottky barrier diodes. IEEE Transactions on Power Electronics, Vol.27 (No.8). pp. 3826-3833. doi:10.1109/TPEL.2012.2183390 ISSN 0885-8993.
Advantage West Midlands (AWM)
Alatise, Olayiwola M., Parker-Allotey, Nii-Adotei, Jennings, M. R., Mawby, P. A. (Philip A.), Kennedy, Ian and Petkos, George (2011) Modeling the impact of the trench depth on the gate-drain capacitance in power MOSFETs. IEEE Electron Device Letters, Vol.32 (No.9). pp. 1269-1271. doi:10.1109/LED.2011.2159476 ISSN 0741-3106.
Alatise, Olayiwola M., Parker-Allotey, Nii-Adotei, Jennings, M. R., Mawby, P. A. (Philip A.), Kennedy, Ian and Petkos, George (2011) Trench depth optimization for energy efficient discrete power trench MOSFETs. In: The 41st European Solid State Device Research Conference (ESSDERC), Finlandia Hall, Helsinki, Finland, Sep 12-16, 2011. Published in: Solid-State Device Research Conference (ESSDERC), 2011 Proceedings of the European pp. 291-294. doi:10.1109/ESSDERC.2011.6044177 ISSN 1930-8876.
Advantage West Midlands (AWM)
Parker-Allotey, Nii-Adotei, Alatise, Olayiwola M., Hamilton, Dean P., Jennings, M. R., Mawby, P. A. (Philip A.), Nash, Robert Alastair and Magill, Rob (2011) Conduction and switching loss comparison between an IGBT/Si-PiN diode pair and an IGBT/SiC-Schottky diode pair. In: IEEE Innovative Smart Grid Technologies Conference (ISGT) , Manchester Central Convention Complex, Manchester, United Kingdom, Dec 5-7, 2011. Published in: Innovative Smart Grid Technologies (ISGT Europe), 2011 2nd IEEE PES International Conference and Exhibition on pp. 1-6. doi:10.1109/ISGTEurope.2011.6162688 ISSN 2165-4816.
Birmingham Science City
Alatise, Olayiwola M., Parker-Allotey, Nii-Adotei, Jennings, M. R., Mawby, P. A. (Philip A.), Kennedy, Ian and Petkos, George (2011) Modeling the impact of the trench depth on the gate-drain capacitance in power MOSFETs. IEEE Electron Device Letters, Vol.32 (No.9). pp. 1269-1271. doi:10.1109/LED.2011.2159476 ISSN 0741-3106.
Engineering and Physical Sciences Research Council (EPSRC)
Ortiz Gonzalez, Jose Angel, Alatise, Olayiwola M., Aliyu, Attahir, Rajaguru, Pushparajah, Castellazzi, Alberto, Ran, Li, Mawby, P. A. (Philip A.) and Bailey, Chris (2017) Evaluation of SiC schottky diodes using pressure contacts. IEEE Transactions on Industrial Electronics, 64 (10). 8213 -8223. doi:10.1109/TIE.2017.2677348 ISSN 0278-0046.
Ortiz Gonzalez, Jose Angel, Alatise, Olayiwola M., Hu, Ji, Ran, Li and Mawby, P. A. (Philip A.) (2017) An investigation of temperature sensitive electrical parameters for SiC power MOSFETs. IEEE Transactions on Power Electronics, 32 (10). 7954 -7966. doi:10.1109/TPEL.2016.2631447 ISSN 0885-8993.
Ortiz Gonzalez, Jose Angel, Alatise, Olayiwola M., Mawby, P. A. (Philip A.), Aliyu, A. M. and Castellazzi, A. (2017) Pressure contact multi-chip packaging of SiC Schottky diodes. In: 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD), Sapporo, Japan, 28 May-1 Jun 2017. Published in: 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) ISBN 9784886860941.
Ortiz Gonzalez, Jose Angel, Alatise, Olayiwola M., Ran, Li, Mawby, P. A. (Philip A.), Rajaguru, Pushparajah and Bailey, Christopher (2017) An initial consideration of silicon carbide devices in pressure-packages. In: 2016 IEEE Energy Conversion Congress and Exposition (ECCE), Milwaukee, WI, 18-22 Sep 2016. Published in: 2016 IEEE Energy Conversion Congress and Exposition (ECCE) ISBN 9781509007370.
Ortiz Gonzalez, Jose Angel, Alatise, Olayiwola M., Nobeen, Nadeesh, Hu, Ji, Ran, Li and Mawby, P. A. (Philip A.) (2016) Electrothermal considerations for power cycling in SiC technologies. In: 9th International Conference on Integrated Power Electronics Systems, Nuremberg, Germany, 08-10 Mar 2016. Published in: Proceedings of CIPS 2016; 9th International Conference on Integrated Power Electronics Systems, 2016 ISBN 9783800741717.
Ortiz Gonzalez, Jose Angel, Ran, Li, Mohamed Motalab Ali Soli, A., Davletzhanova, Zarina, Alatise, Olayiwola M., Mawby, P. A. (Philip A.), Borong, Hu, Zheng, Zeng, Hai, Ren, Li, Hui and Shengyou, Xu (2016) Enabling high reliability power modules : a multidisciplinary task. In: International Symposium on 3D Power Electronics Integration and Manufacturing, McKimmon Center, Raleigh, NC, USA, 13-15 June 2016 ISBN 9781509029402.
Ortiz Gonzalez, Jose Angel, Aliyu, A. M., Alatise, Olayiwola M., Castellazzi, A., Ran, Li and Mawby, P. A. (Philip A.) (2016) Development and characterisation of pressed packaging solutions for high-temperature high-reliability SiC power modules. Microelectronics Reliability, 64 . pp. 434-439. ISSN 0026-2714.
Lai, Wei, Chen, Mingyou, Ran, Li, Alatise, Olayiwola M., Xu, Shengyou and Mawby, P. A. (Philip A.) (2016) Low ΞTj stress cycle effects in IGBT power module die-attach lifetime modelling. IEEE Transactions on Power Electronics, 31 (9). pp. 6575-6585. doi:10.1109/TPEL.2015.2501540 ISSN 0885-8993.
Hu, Ji, Alatise, Olayiwola M., Ortiz Gonzalez, Jose Angel, Alexakis, Petros, Ran, Li and Mawby, P. A. (2016) Robustness and balancing of parallel connected power devices : SiC vs. CoolMOS. IEEE Transactions on Industrial Electronics, 63 (4). pp. 2092-2102. doi:10.1109/TIE.2015.2500187 ISSN 0278-0046.
Ortiz Gonzalez, Jose Angel, Alatise, Olayiwola M., Hu, Ji, Ran, Li and Mawby, P. A. (Philip A.) (2016) Temperature sensitive electrical parameters for condition monitoring in SiC power MOSFETs. In: 8th IET International Conference on Power Electronics, Machines and Drives (PEMD 2016), Glasgow, UK, 19-21 April 2016. Published in: 8th IET International Conference on Power Electronics, Machines and Drives (PEMD 2016) ISBN 9781785611889.
Bonyadi, Roozbeh, Alatise, Olayiwola M., Jahdi, Saeed, Hu, Ji, Ortiz Gonzalez, Jose Angel, Ran, Li and Mawby, P. A. (2015) Compact electrothermal reliability modeling and experimental characterization of bipolar latchup in SiC and CoolMOS power MOSFETs. IEEE Transactions on Power Electronics, 30 (12). pp. 6978-6992. doi:10.1109/TPEL.2015.2388512 ISSN 0885-8993.
Jahdi, Saeed, Alatise, Olayiwola M., Ortiz Gonzalez, Jose Angel, Bonyadi, Roozbeh, Ran, Li and Mawby, P. A. (Philip A.) (2015) Temperature and switching rate dependence of crosstalk in Si-IGBT and SiC power modules. IEEE Transactions on Industrial Electronics, 63 (2). pp. 849-863. doi:10.1109/TIE.2015.2491880 ISSN 0278-0046.
Jahdi, Saeed, Alatise, Olayiwola M., Bonyadi, Roozbeh, Alexakis, Petros, Fisher, Craig A., Ortiz Gonzalez, Jose Angel, Ran, Li and Mawby, P. A. (Philip A.) (2015) An analysis of the switching performance and robustness of power MOSFETs body diodes : a technology evaluation. IEEE Transactions on Power Electronics, Volume 30 (Number 5). pp. 2383-2394. doi:10.1109/TPEL.2014.2338792 ISSN 0885-8993.
Jahdi, Saeed, Alatise, Olayiwola M., Ran, Li and Mawby, P. A. (Philip A.) (2015) Accurate analytical modeling for switching energy of PiN diodes reverse recovery. IEEE Transactions on Industrial Electronics, 62 (3). pp. 1461-1470. doi:10.1109/TIE.2014.2347936 ISSN 0278-0046.
Jahdi, Saeed, Alatise, Olayiwola M., Alexakis, Petros, Ran, Li and Mawby, P. A. (Philip A.) (2015) The impact of temperature and switching rate on the dynamic characteristics of silicon carbide schottky barrier diodes and MOSFETs. IEEE Transactions on Industrial Electronics, Volume 62 (Number 1). pp. 163-171. doi:10.1109/TIE.2014.2326999 ISSN 0278-0046.
Jahdi, Saeed, Alatise, Olayiwola M., Ran, Li and Mawby, P. A. (Philip A.) (2015) Analytical modeling of switching energy of silicon carbide Schottky diodes as functions of dIDS/dt and temperature. IEEE Transactions on Power Electronics, 30 (6). pp. 3345-3355. doi:10.1109/TPEL.2014.2333474 ISSN 0885-8993.
Alatise, Olayiwola M., Olsen, Sarah H. and O'Neill, Anthony G. (2010) Linearity and mobility degradation in strained Si MOSFETs with thin gate dielectrics. Solid-State Electronics, Vol.54 (No.6). pp. 628-634. doi:10.1016/j.sse.2009.12.036 ISSN 00381101.
Alatise, Olayiwola M., Kwa, Kelvin S. K., Olsen, Sarah H. and O'Neill, Anthony G. (2010) The impact of self-heating and SiGe strain-relaxed buffer thickness on the analog performance of strained Si nMOSFETs. Solid-State Electronics, Vol.54 (No.3). pp. 327-335. doi:10.1016/j.sse.2009.09.029 ISSN 0038-1101.
Alatise, Olayiwola M., Kwa, Kelvin S. K., Olsen, Sarah H. and O'Neill, Anthony G. (2009) Improved analog performance in strained-Si MOSFETs using the thickness of the silicon-germanium strain-relaxed buffer as a design parameter. IEEE Transactions on Electron Devices, Vol.56 (No.12). pp. 3041-3048. doi:10.1109/TED.2009.2030721 ISSN 0018-9383.
Alatise, Olayiwola M., Olsen, Sarah H., Cowern, Nicholas E. B., O'Neill, Anthony G. and Majhi, Prashant (2009) Performance enhancements in scaled strained-SiGe pMOSFETs with HfSiOx/TiSiN gate stacks. IEEE Transactions on Electron Devices, Vol.56 (No.10). pp. 2277-2284. doi:10.1109/TED.2009.2028375 ISSN 0018-9383.
Olsen, Sarah H., Dobrosz, Peter, Agaiby, Rouzet M.B., Tsang, Yuk Lun, Alatise, Olayiwola M., Bull, Steve J., OβNeill, Anthony G., Moselund, Kirsten E., Ionescu, Adrian M. and Majhi, Prashant (2008) Nanoscale strain characterisation for ultimate CMOS and beyond. Materials Science in Semiconductor Processing, Vol.11 (No.5-6). pp. 271-278. doi:10.1016/j.mssp.2009.06.003 ISSN 1369-8001.
European Regional Development Fund (ERDF)
Alatise, Olayiwola M., Parker-Allotey, Nii-Adotei, Hamilton, Dean P. and Mawby, P. A. (Philip A.) (2012) The impact of parasitic inductance on the performance of silicon-carbide Schottky barrier diodes. IEEE Transactions on Power Electronics, Vol.27 (No.8). pp. 3826-3833. doi:10.1109/TPEL.2012.2183390 ISSN 0885-8993.
Parker-Allotey, Nii-Adotei, Alatise, Olayiwola M., Hamilton, Dean P., Jennings, M. R., Mawby, P. A. (Philip A.), Nash, Robert Alastair and Magill, Rob (2011) Conduction and switching loss comparison between an IGBT/Si-PiN diode pair and an IGBT/SiC-Schottky diode pair. In: IEEE Innovative Smart Grid Technologies Conference (ISGT) , Manchester Central Convention Complex, Manchester, United Kingdom, Dec 5-7, 2011. Published in: Innovative Smart Grid Technologies (ISGT Europe), 2011 2nd IEEE PES International Conference and Exhibition on pp. 1-6. doi:10.1109/ISGTEurope.2011.6162688 ISSN 2165-4816.
European Union (EU)
Olsen, Sarah H., Dobrosz, Peter, Agaiby, Rouzet M.B., Tsang, Yuk Lun, Alatise, Olayiwola M., Bull, Steve J., OβNeill, Anthony G., Moselund, Kirsten E., Ionescu, Adrian M. and Majhi, Prashant (2008) Nanoscale strain characterisation for ultimate CMOS and beyond. Materials Science in Semiconductor Processing, Vol.11 (No.5-6). pp. 271-278. doi:10.1016/j.mssp.2009.06.003 ISSN 1369-8001.
Guo jia zi ran ke xue ji jin wei yuan hui (China) [National Natural Science Foundation of China] (NSFC)
Ortiz Gonzalez, Jose Angel, Ran, Li, Mohamed Motalab Ali Soli, A., Davletzhanova, Zarina, Alatise, Olayiwola M., Mawby, P. A. (Philip A.), Borong, Hu, Zheng, Zeng, Hai, Ren, Li, Hui and Shengyou, Xu (2016) Enabling high reliability power modules : a multidisciplinary task. In: International Symposium on 3D Power Electronics Integration and Manufacturing, McKimmon Center, Raleigh, NC, USA, 13-15 June 2016 ISBN 9781509029402.
SEMATECH (Organization)
Alatise, Olayiwola M., Olsen, Sarah H., Cowern, Nicholas E. B., O'Neill, Anthony G. and Majhi, Prashant (2009) Performance enhancements in scaled strained-SiGe pMOSFETs with HfSiOx/TiSiN gate stacks. IEEE Transactions on Electron Devices, Vol.56 (No.10). pp. 2277-2284. doi:10.1109/TED.2009.2028375 ISSN 0018-9383.
Science City Research Alliance
Jahdi, Saeed, Alatise, Olayiwola M., Bonyadi, Roozbeh, Alexakis, Petros, Fisher, Craig A., Ortiz Gonzalez, Jose Angel, Ran, Li and Mawby, P. A. (Philip A.) (2015) An analysis of the switching performance and robustness of power MOSFETs body diodes : a technology evaluation. IEEE Transactions on Power Electronics, Volume 30 (Number 5). pp. 2383-2394. doi:10.1109/TPEL.2014.2338792 ISSN 0885-8993.
Jahdi, Saeed, Alatise, Olayiwola M., Fisher, Craig A., Ran, Li and Mawby, P. A. (Philip A.) (2014) An evaluation of silicon carbide unipolar technologies for electric vehicle drive-trains. IEEE Journal of Emerging and Selected Topics in Power Electronics, Volume 2 (Number 3). pp. 517-528. doi:10.1109/JESTPE.2014.2307492 ISSN 2168-6777.
Seventh Framework Programme (European Commission) (FP7)
Alatise, Olayiwola M., Olsen, Sarah H. and O'Neill, Anthony G. (2010) Linearity and mobility degradation in strained Si MOSFETs with thin gate dielectrics. Solid-State Electronics, Vol.54 (No.6). pp. 628-634. doi:10.1016/j.sse.2009.12.036 ISSN 00381101.
Alatise, Olayiwola M., Kwa, Kelvin S. K., Olsen, Sarah H. and O'Neill, Anthony G. (2010) The impact of self-heating and SiGe strain-relaxed buffer thickness on the analog performance of strained Si nMOSFETs. Solid-State Electronics, Vol.54 (No.3). pp. 327-335. doi:10.1016/j.sse.2009.09.029 ISSN 0038-1101.
Alatise, Olayiwola M., Kwa, Kelvin S. K., Olsen, Sarah H. and O'Neill, Anthony G. (2009) Improved analog performance in strained-Si MOSFETs using the thickness of the silicon-germanium strain-relaxed buffer as a design parameter. IEEE Transactions on Electron Devices, Vol.56 (No.12). pp. 3041-3048. doi:10.1109/TED.2009.2030721 ISSN 0018-9383.
Sixth Framework Programme (European Commission) (FP6)
Alatise, Olayiwola M., Kwa, Kelvin S. K., Olsen, Sarah H. and O'Neill, Anthony G. (2010) The impact of self-heating and SiGe strain-relaxed buffer thickness on the analog performance of strained Si nMOSFETs. Solid-State Electronics, Vol.54 (No.3). pp. 327-335. doi:10.1016/j.sse.2009.09.029 ISSN 0038-1101.
University of Warwick
Tang, Yuan, Ran, Li, Alatise, Olayiwola M. and Mawby, P. A. (Philip A.) (2016) Capacitor selection for modular multilevel converter. IEEE Transactions on Industry Applications, 52 (4). 3279 -3293. doi:10.1109/TIA.2016.2533620 ISSN 0093-9994.
Warwick-Birmingham Science City Alliance Initiative
Alatise, Olayiwola M., Parker-Allotey, Nii-Adotei, Hamilton, Dean P. and Mawby, P. A. (Philip A.) (2012) The impact of parasitic inductance on the performance of silicon-carbide Schottky barrier diodes. IEEE Transactions on Power Electronics, Vol.27 (No.8). pp. 3826-3833. doi:10.1109/TPEL.2012.2183390 ISSN 0885-8993.
This list was generated on Thu Mar 28 08:45:39 2024 GMT.