2023

Karout, Mohammed Amer, Alatise, Olayiwola M., Ayala, Heaklig, Fisher, Craig A., Mawby, Philip. A. and Taha, Mohamed (2023) On the design procedure of the double pulse test rig for WBG devices. In: 2023 IEEE Conference on Power Electronics and Renewable Energy (CPERE), Luxor, Egypt, 19-21 Feb 2023. Published in: 2023 IEEE Conference on Power Electronics and Renewable Energy (CPERE) ISBN 9781665452335. doi:10.1109/cpere56564.2023.10119544

Mendy, Simon, Rong, Xiaoyun, Zinchenko, Oleksii, Saleh, Amr, Tousizadeh, Mahdi, Alatise, Olayiwola M., Mawby, Philip. A. and Taha, Mohamed (2023) Inductor design for an automotive propulsion drive power hardware in the loop test rig. In: 2023 IEEE Conference on Power Electronics and Renewable Energy (CPERE), Luxor, Egypt, 19-21 Feb 2023 ISBN 9781665452335. doi:10.1109/cpere56564.2023.10119545

2022

Ren, Hai, Ran, Li, Liu, Xianming, Liu, Li, Djurovic, Sinisa, Jiang, Huaping, Barnes, Mike and Mawby, Philip A. (2022) Quasi-distributed temperature detection of press-pack IGBT power module using FBG sensing. IEEE Journal of Emerging and Selected Topics in Power Electronics, 10 (5). pp. 4981-4992. doi:10.1109/jestpe.2021.3109395 ISSN 2168-6777.

Omotoso, Olutayo, Kiselychnyk, Oleh, McMahon, Richard A., Mawby, Philip. A., James, Pete and Mawby, Michael (2022) The challenges in the implementation and voltage ripple analysis of quasi-three-phase dual active bridge converter. In: 2022 International Symposium on Power Electronics, Electrical Drives, Automation and Motion (SPEEDAM), Sorrento, Italy, 22-24 Jun 2022 ISBN 9781665484596. doi:10.1109/speedam53979.2022.9842151

Hu, Zedong, Hu, Borong, Ran, Li, Tavner, Peter, Kong, Hua, Mawby, Philip A. and Wu, Ruizhu (2022) Monitoring power module solder degradation from heat dissipation in two opposite directions. IEEE Transactions on Power Electronics, 37 (8). pp. 9754-9766. doi:10.1109/TPEL.2022.3157464 ISSN 0885-8993.

Ren, Hai, Liu, Li, Djurovic, Sinisa, Ran, Li, Liu, Xianming, Feng, Hao and Mawby, Philip. A. (2022) In-situ contact pressure monitoring of press pack power module using FBG sensors. IEEE Transactions on Instrumentation and Measurement, 71 . p. 1. 7006211. doi:10.1109/tim.2022.3193950 ISSN 1557-9662.

Lophitis, Neophytos , Gammon, Peter M., Renz, A. B., Dai, Tianxiang, Tiwari, Amit, Trajkovic, Tatjana, Mawby, Philip A., Udrea, Florin and Antoniou, Marina (2022) Compact trench floating field rings termination for 10kV+ rated SiC n-IGBTs. Materials Science Forum, 1062 . pp. 598-602. doi:10.4028/p-64ey6u ISSN 1662-9752.

Renz, A. B., Vavasour, Oliver J., Pérez-Tomás, Amador, Cao, Qin Ze, Shah, Vishal, Bonyadi, Yeganeh, Pathirana, Vasantha, Trajkovic, Tanya, Baker, G. W. C., Mawby, Philip A. and Gammon, Peter M. (2022) Engineering the Schottky interface of 3.3 kV SiC JBS diodes using a P2O5 surface passivation treatment. Materials Science Forum, 1062 . pp. 190-194. doi:10.4028/p-97jy4p ISSN 1662-9752.

Zhang, L., Dai, Tianxiang, Gammon, Peter M., Lophitis, Neophytos , Udrea, Florin, Tiwari, Amit, Gonzalez, Jose Ortiz, Renz, A. B., Shah, Vishal, Mawby, Philip A. and Antoniou, Marina (2022) Investigations of short circuit robustness of SiC IGBTs with considerations on physics properties and design. Materials Science Forum, 1062 . pp. 504-508. doi:10.4028/p-13z22g ISSN 1662-9752.

Renz, A. B., Vavasour, Oliver J., Gammon, Peter M., Li, Fan, Dai, Tianxiang, Baker, G. W. C., Grant, Nicholas E., Murphy, John D., Mawby, Philip A. and Shah, Vishal (2022) The improved reliability performance of post-deposition annealed ALD-SiO2. Materials Science Forum, 1062 . pp. 325-329. doi:10.4028/p-b76y6c ISSN 1662-9752.

Baker, G. W. C., Li, Fan, Dai, Tianxiang, Renz, A. B., Zhang, L., Qi, Yunyi, Shah, Vishal, Mawby, Philip A., Antoniou, Marina and Gammon, Peter M. (2022) A study of 4H-SiC semi-superjunction rectifiers for practical realisation. Materials Science Forum, 1062 . pp. 514-518. doi:10.4028/p-cxd7z3 ISSN 1662-9752.

Renz, A. B., Vavasour, Oliver J., Rommel, Mathias, Baker, G. W. C., Gammon, Peter M., Dai, Tianxiang, Li, Fan, Antoniou, Marina, Mawby, Philip A. and Shah, Vishal (2022) A study of high resistivity semi-insulating 4H-SiC epilayers formed via the implantation of Germanium and Vanadium. Materials Science Forum, 1062 . pp. 523-527. doi:10.4028/p-92w3k6 ISSN 1662-9752.

Baker, G. W. C., Gammon, P. M., Renz, A. B., Vavasour, O., Chan, C. W., Qi, Y., Dai, T., Li, F., Zhang, L., Kotagama, V., Shah, V. A., Mawby, P. A. (Philip A.) and Antoniou, M. (2022) Optimization of 1700-V 4H-SiC semi-superjunction Schottky rectifiers with implanted P-pillars for practical realization. IEEE Transactions on Electron Devices, 69 (4). pp. 1924-1930. doi:10.1109/TED.2022.3152460 ISSN 0018-9383.

Arof, Saharul, Ahmad, Mohamad Rosyidi, Mawby, Philip, Arof, Hamzah and Noorsal, Emilia (2022) Comparative study on the performance of electrical vehicles with DC drive and series motor, DC drive and separately excited DC motor, and AC drive and PMSM motor. Part 1 : driving and braking operations. In: Progress in Engineering Technology IV. Advanced Structured Materials, 169 . Springer Cham, pp. 121-138. ISBN 9783030932503

Arof, Saharul, Noor, Norramlee Mohamed, Mawby, Philip, Arof, Hamzah and Noorsal, Emilia (2022) Embedded system using a PIC microcontroller for series motor four quadrants drive DC chopper controllers for the application in electrical vehicles. In: Progress in Engineering Technology IV. Advanced Structured Materials, 169 . Springer Cham, pp. 23-37. ISBN 9783030932503

Arof, Saharul, Ahmad, Fathul H., Yaakop, Nurazlin M., Jalil, Julaida A., Mawby, Philip, Arof, Hamzah and Noorsal, Emilia (2022) Hardware development for zero crossing of a multilevel single phase rectifier chopper for plug-in electric car battery charger using a PIC microcontroller. In: Progress in Engineering Technology IV. Advanced Structured Materials, 169 . Springer Cham, pp. 227-242. ISBN 9783030932503

Arof, Saharul, Ahmad, Mohamad Rosyidi, Mawby, Philip, Arof, Hamzah and Noorsal, Emilia (2022) Study on ripple current, ripple torque in parallel mode of series motor four quadrants DC chopper for electric vehicles. In: Progress in Engineering Technology IV. Advanced Structured Materials, 169 . Springer Cham, pp. 185-200. ISBN 9783030932503

Renz, A. B., Shah, Vishal, Vavasour, Oliver J., Baker, Guy, Bonyadi, Yegi, Sharma, Yogesh K., Pathirana, Vasantha, Trajkovic, Tanya, Mawby, Philip. A., Antoniou, Marina and Gammon, Peter M. (2022) The optimization of 3.3 kV 4H-SiC JBS diodes. IEEE Transactions on Electron Devices, 69 (1). pp. 298-303. doi:10.1109/ted.2021.3129705 ISSN 1557-9646.

Renz, Arne Benjamin, Vavasour, Oliver J., Gammon, Peter M., Li, Fan, Dai, Tianxiang, Baker, Guy, Grant, Nicholas E., Murphy, John D., Mawby, P. A. (Philip A.), Shah, Vishal and Gott, James A. (2022) (Invited, Digital Presentation) Improved reliability of 4H-SiC metal-oxide-semiconductor devices utilising atomic layer deposited layers with enhanced interface quality. ECS Transactions, 108 (2). pp. 43-49. doi:10.1149/10802.0043ecst ISSN 1938-5862.

2021

Renz, Arne Benjamin, Vavasour, Oliver James, Shah, Vishal Ajit, Pathirana, Vasantha, Trajkovic, Tanya, Bonyadi, Yeganeh, Wu, Ruizhu, Ortiz-Gonzalez, Jose Angel , Rong, Xiaoyun, Baker, Guy, Mawby, Philip. A. and Gammon, Peter M. (2021) 3.3 kV SiC JBS diodes employing a P2O5 surface passivation treatment to improve electrical characteristics. In: 2021 IEEE Energy Conversion Congress and Exposition (ECCE), Vancouver, BC, Canada, 10-14 Oct 2021 pp. 5283-5288. doi:10.1109/ECCE47101.2021.9594999 ISSN 2329-3721.

Gonzalez, Jose Ortiz, Perez-Estevez, Diego, Wu, Ruizhu, Doval-Gandoy, Jesus, Mawby, Philip. A. and Alatise, Olayiwola M. (2021) Power device losses in two-level converters with direct current controllers for grid connected applications. In: 2021 IEEE Energy Conversion Congress and Exposition (ECCE), Vancouver, BC, Canada, 10-14 Oct 2021. Published in: 2021 IEEE Energy Conversion Congress and Exposition (ECCE) pp. 3154-3159. ISBN 9781728151359. doi:10.1109/ECCE47101.2021.9595878

Lachichi, Amel and Mawby, Philip. A. (2021) Bipolar degradation monitoring of 4H-SiC MOSFET power devices by electroluminescence measurements. In: IECON 2021 – 47th Annual Conference of the IEEE Industrial Electronics Society, Toronto, ON, Canada , 13-16 Oct 2021 ISBN 9781665435543. doi:10.1109/IECON48115.2021.9589563 ISSN 2577-1647.

Li, Fan, Roccaforte, Fabrizio, Greco, Giuseppe, Fiorenza, Patrick, La Via, Francesco, Pérez-Tomas, Amador, Evans, Jonathan, Fisher, Craig, Monaghan, Finn, Mawby, Philip. A. and Jennings, Mike (2021) Status and prospects of cubic silicon carbide power electronics device technology. Materials, 14 (19). e5831. doi:10.3390/ma14195831 ISSN 1996-1944.

Baker, G. W. C., Chan, C., Renz, A. B., Qi, Yunyi, Dai, Tianxiang, Li, Fan, Shah, V. A., Mawby, P. A. (Philip A.), Antoniou, Marina and Gammon, P. M. (2021) Optimization of 1700-V 4H-SiC superjunction Schottky rectifiers with implanted p-pillars for practical realization. IEEE Transactions on Electron Devices, 68 (7). 3497 -3504. doi:10.1109/TED.2021.3083241 ISSN 0018-9383.

Renz, A. B., Li, F., Vavasour, Oliver J., Gammon, P. M., Dai, T., Baker, G. W. C., Via, F. La, Zielinski, M. (Marcin), Zhang, L., Grant, Nicholas E., Murphy, John D., Mawby, P. A. (Philip A.), Jennings, M. R. (Michael R.) and Shah, V. A. (2021) Initial investigations into the MOS interface of freestanding 3C-SiC layers for device applications. Semiconductor Science and Technology, 36 (5). 055006. doi:10.1088/1361-6641/abefa1 ISSN 1361-6641.

Dai, Tianxiang, Zhang, L., Vavasour, Oliver J., Renz, A. B., Shah, V. A., Antoniou, M., Mawby, P. A. (Philip A.) and Gammon, P. M. (2021) A compact trench-assisted space-modulated JTE design for high-voltage 4H-SiC devices. IEEE Transactions on Electron Devices, 68 (3). pp. 1162-1167. doi:10.1109/TED.2020.3047348 ISSN 0018-9383.

Renz, A. B., Vavasour, Oliver J., Gammon, P. M., Li, Fan, Dai, Tianxiang, Antoniou, M., Baker, G. W. C., Bashar, E., Grant, N. E, Murphy, J. D., Mawby, P. A. and Shah, V. A. (2021) The improvement of atomic layer deposited SiO2/4H-SiC interfaces via a high temperature forming gas anneal. Materials Science in Semiconductor Processing, 122 . 105527. doi:10.1016/j.mssp.2020.105527 ISSN 1369-8001.

2020

Gonzalez, Jose Ortiz, Alatise, Olayiwola M. and Mawby, Philip. A. (2020) Non-intrusive methodologies for characterization of bias temperature instability in SiC power MOSFETs. In: 2020 IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA, 28 Apr -30 May 2020 ISBN 9781728131993. doi:10.1109/IRPS45951.2020.9129637

Wu, Ruizhu, Gonzalez, Jose Ortiz, Davletzhanova, Zarina, Mawby, Philip. A. and Alatise, Olayiwola M. (2020) Fast switching SiC cascode JFETs for EV traction inverters. In: Applied Power Electronics Conference and Exposition (APEC), Annual IEEE Conference, Virtual conference, 15-19 Mar 2020. Published in: 2020 IEEE Applied Power Electronics Conference and Exposition (APEC) pp. 3489-3496. ISBN 9781728148304. doi:10.1109/APEC39645.2020.9124052 ISSN 1048-2334.

Renz, A. B., Shah, V. A., Vavasour, Oliver J., Bonyadi, Yeganeh, Li, Fan, Dai, Tianxiang, Baker, G. W. C., Hindmarsh, Steven A., Han, Yan, Walker, Marc, Sharma, Y., Liu, Y., Raghothamachar, B., Dudley, M., Mawby, P. A. (Philip A.) and Gammon, P. M. (2020) The improvement of Mo/4H-SiC Schottky diodes via a P2O5 surface passivation treatment. Journal of Applied Physics, 127 (2). 025704. doi:10.1063/1.5133739 ISSN 0021-8979.

Arvanitopoulos, Anastasios E., Antoniou, Marina, Jennings, Mike R., Perkins, Samuel, Gyftakis, Konstantinos N., Mawby, Philip. A. and Lophitis, Neophytos (2020) A defects-based model on the barrier height behavior in 3C-SiC-on-Si Schottky barrier diodes. IEEE Journal of Emerging and Selected Topics in Power Electronics, 8 (1). pp. 54-65. doi:10.1109/JESTPE.2019.2942714 ISSN 2168-6777.

2019

Wu, Ruizhu, Gonzalez, Jose Ortiz, Davletzhanova, Zarina, Mawby, Philip. A. and Alatise, Olayiwola M. (2019) The potential of SiC Cascode JFETs in electric vehicle traction inverters. IEEE Transactions on Transportation Electrification, 5 (4). pp. 1349-1359. doi:10.1109/TTE.2019.2954654 ISSN 2372-2088.

Gonzalez, Jose Ortiz, Alatise, Olayiwola M. and Mawby, Philip. A. (2019) Novel method for evaluation of negative bias temperature instability of SiC MOSFETs. Materials Science Forum, 963 . pp. 749-752. doi:10.4028/www.scientific.net/MSF.963.749 ISSN 1662-9752.

Gonzalez, Jose Ortiz, Alatise, Olayiwola M. and Mawby, Philip. A. (2019) Characterization of BTI in SiC MOSFETs using third quadrant characteristics. In: 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), Shanghai, China, 19-23 May 2019. Published in: 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) pp. 207-210. ISBN 9781728105802. doi:10.1109/ISPSD.2019.8757624 ISSN 1946-0201.

Arof, S., Diyanah, N. H., Yaakop, N. M., Mawby, P. A. (Philip A.) and Arof, H. (2019) Processor in the Loop for Testing Series Motor Four Quadrants Drive Direct Current Chopper for Series Motor Driven Electric Car. In: Ismail, Azman and Bakar, Muhamad Husaini Abu and Oechsner, Andreas, (eds.) Advanced Engineering for Processes and Technologies. Cham, Switzerland: Springer, pp. 59-76. ISBN 9783030056209

Arof, S., Diyanah, N. H., Mawby, P. A. (Philip A.) and Arof, H. (2019) Study on Implementation of Neural Network Controlling Four Quadrants Direct Current Chopper. In: Ismail, Azman and Bakar, Muhamad Husaini Abu and Oechsner, Andreas, (eds.) Advanced Engineering for Processes and Technologies. Springer, pp. 37-57. ISBN 9783030056209

2018

Hu, Borong, Konaklieva, Sylvia, Ran, Li, Kourra, Nadia, Williams, Mark A., Lai, Wei and Mawby, Philip. A. (2018) Long term reliability of power modules with low amplitude thermomechanical stresses and initial defects. In: 2018 IEEE Energy Conversion Congress and Exposition (ECCE), Portland, OR, USA, 23 - 27 Sep 2018. Published in: 2018 IEEE Energy Conversion Congress and Exposition (ECCE) ISBN 9781479973125. doi:10.1109/ECCE.2018.8558137

Davletzhanova, Zarina, Dai, Tianxiang, Alatise, Olayiwola M., Gonzalez, Jose Ortiz, Mawby, Philip. A., Bonyadi, Roozbeh and Chan, Chun Wa (2018) Safe-operating-area of snubberless series connected silicon and SiC power devices. In: Energy Conversion Congress and Exposition, ECCE, IEEE, Portland, OR, USA, 23-27 Sep 2018. Published in: 2018 IEEE Energy Conversion Congress and Exposition (ECCE) pp. 1875-1881. ISBN 9781479973132. doi:10.1109/ECCE.2018.8557402 ISSN 2329-3748.

Shao, Weihua, Ran, Li, Zeng, Zheng, Wu, Ruizu, Mawby, Philip, Huaping, Jiang, Kastha, Debaprasad and Bajpai, Prabodh (2018) Power Modules for Pulsed Power Applications Using Phase Change Material. In: 2018 Second International Symposium on 3D Power Electronics Integration and Manufacturing (3D-PEIM) , College Park, MD, USA , 08 November 2018 pp. 1-6. doi:10.1109/3DPEIM.2018.8525239

Davletzhanova, Zarina, Alatise, Olayiwola M., Bonyadi, Roozbeh, Gonzalez, Jose Ortiz, Chan, Chun Wa, Bonyadi, Yeganeh, Jennings, Mike and Mawby, P. A. (Philip A.) (2018) Impact of Leakage Currents on Voltage Sharing in Series Connected SiC Power MOSFETs and Silicon IGBT Devices. In: 20th European Conference on Power Electronics and Applications, Riga, Latvia, 17-21 September 2018. Published in: 2018 20th European Conference on Power Electronics and Applications (EPE'18 ECCE Europe) ISBN 9781538641453 .

Dai, Tianxiang, Chan, Chun Wa, Deng, Xc, Jiang, Huaping, Gammon, P. M., Jennings, M. R. and Mawby, P. A. (Philip A.) (2018) 4H-SiC trench MOSFET with integrated fast recovery MPS diode. ELECTRONICS LETTERS, 54 (3). pp. 167-169. doi:10.1049/el.2017.3198 ISSN 0013-5194.

2017

Hu, Borong, Ortiz Gonzalez, Jose Angel, Ran, Li, Ren, Hai, Zeng, Zheng, Lai, Wei, Gao, Bing, Alatise, Olayiwola M., Lu, Hua, Bailey, Christopher and Mawby, P. A. (Philip A.) (2017) Failure and reliability analysis of a SiC power module based on stress comparison to a Si device. IEEE Transactions on Device and Materials Reliability, 17 (4). pp. 727-737. doi:10.1109/TDMR.2017.2766692 ISSN 1530-4388.

Ortiz Gonzalez, Jose Angel, Alatise, Olayiwola M., Aliyu, Attahir, Rajaguru, Pushparajah, Castellazzi, Alberto, Ran, Li, Mawby, P. A. (Philip A.) and Bailey, Chris (2017) Evaluation of SiC schottky diodes using pressure contacts. IEEE Transactions on Industrial Electronics, 64 (10). 8213 -8223. doi:10.1109/TIE.2017.2677348 ISSN 0278-0046.

Ortiz Gonzalez, Jose Angel, Alatise, Olayiwola M., Hu, Ji, Ran, Li and Mawby, P. A. (Philip A.) (2017) An investigation of temperature sensitive electrical parameters for SiC power MOSFETs. IEEE Transactions on Power Electronics, 32 (10). 7954 -7966. doi:10.1109/TPEL.2016.2631447 ISSN 0885-8993.

Ortiz Gonzalez, Jose Angel, Alatise, Olayiwola M., Ran, Li and Mawby, P. A. (2017) Impact of temperature imbalance on junction temperature identification for multiple chip modules using TSEPs. In: PCIM Europe 2017; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Nürnberg, Deutschland, 16-18 May 2017 . Published in: Proceedings of PCIM Europe 2017; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management ISBN 9783800744244.

Ortiz Gonzalez, Jose Angel, Alatise, Olayiwola M., Mawby, P. A. (Philip A.), Aliyu, A. M. and Castellazzi, A. (2017) Pressure contact multi-chip packaging of SiC Schottky diodes. In: 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD), Sapporo, Japan, 28 May-1 Jun 2017. Published in: 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) ISBN 9784886860941.

Li, Fan, Gammon, P. M., Chan, Chun Wa, Gity, F., Trajkovic, T., Kilchytska, V., Pathirana, V., Ben Ali, K., Flandre, D., Mawby, P. A. (Philip A.) and Gardner, J. W. (2017) Design and fabrication of a power Si/SiC LDMOSFET for high temperature applications. Additional Conferences (Device Packaging, HiTEC, HiTEN, & CICMT), 2017 (HiTen). 000219-000222. doi:10.4071/2380-4491.2017.HiTEN.219 ISSN 2380-4491.

Russell, Stephen, Pérez-Tomás, Amador, McConville, C. F., Fisher, Craig A., Hamilton, Dean P., Mawby, P. A. (Philip A.) and Jennings, Michael R. (2017) Heteroepitaxial beta-Ga2O3 on 4H-SiC for an FET with reduced self heating. Journal of the Electron Devices Society, 5 (4). pp. 256-261. ISSN 2168-6734.

Gammon, P. M., Chan, Chun Wa, Gity, F., Trajkovic, T., Kilchytska, V., Li, Fan, Pathirana, V., Camuso, G., Ben Ali, K., Flandre, D., Mawby, P. A. (Philip A.) and Gardner, J. W. (2017) Design and fabrication of silicon-on-silicon-carbide substrates and power devices for space applications. E3S Web of Conferences, 16 . 12003. doi:10.1051/e3sconf/20171612003 ISSN 2267-1242.

Russell, Stephen, Jennings, M. R. (Michael R.), Dai, Tianxiang, Li, Fan, Hamilton, Dean P., Fisher, Craig A., Sharma, Yogesh K., Mawby, P. A. (Philip A.) and Pérez-Tomás, Amador (2017) Functional oxide as an extreme high-k dielectric towards 4H-SiC MOSFET incorporation. Materials Science Forum, 897 . pp. 155-158. doi:10.4028/www.scientific.net/MSF.897.155 ISSN 1662-9752.

Chan, Chun Wa, Li, Fan, Mawby, P. A. (Philip A.) and Gammon, P. M. (2017) Numerical study of energy capability of Si/SiC LDMOSFETs. Materials Science Forum, 897 . pp. 751-754. doi:10.4028/www.scientific.net/MSF.897.751 ISSN 1662-9752.

Li, Fan, Vavasour, O., Walker, Marc, Martin, David, Sharma, Yogesh K., Russell, Stephen, Jennings, M. R., Pérez-Tomás, Amador and Mawby, P. A. (Philip A.) (2017) Physical characterisation of 3C-SiC(001)/SiO2 interface using XPS. Materials Science Forum, 897 . pp. 151-154. doi:10.4028/www.scientific.net/MSF.897.151 ISSN 1662-9752.

Gammon, P. M., Li, Fan, Chan, Chun Wa, Sánchez, Ana M., Hindmarsh, Steven A., Gity, Farzan, Trajkovic, Tanya, Kilchytska, Valeriya, Pathirana, Vasantha, Camuso, Gianluca, Ben Ali, Khaled, Flandre, Denis, Mawby, P. A. (Philip A.) and Gardner, J. W. (2017) The effect of interfacial charge on the development of wafer bonded silicon-on-silicon-carbide power devices. Materials Science Forum, 897 . pp. 747-750. doi:10.4028/www.scientific.net/MSF.897.747 ISSN 1662-9752.

Gao, Bing, Yang, Fan, Minyou, Chen, Ran, Li, Ullah, Irfan, Xu, Shengyou and Mawby, P. A. (Philip A.) (2017) A temperature gradient based Condition Estimation Method for IGBT Module. IEEE Transactions on Power Electronics, 32 (3). 2227 -2242. doi:10.1109/TPEL.2016.2565701 ISSN 0885-8993.

Ortiz Gonzalez, Jose Angel, Alatise, Olayiwola M., Ran, Li, Mawby, P. A. (Philip A.), Rajaguru, Pushparajah and Bailey, Christopher (2017) An initial consideration of silicon carbide devices in pressure-packages. In: 2016 IEEE Energy Conversion Congress and Exposition (ECCE), Milwaukee, WI, 18-22 Sep 2016. Published in: 2016 IEEE Energy Conversion Congress and Exposition (ECCE) ISBN 9781509007370.

Lai, Wei, Chen, Mingyou, Ran, Li, Xu, Shengyou, Jiang, Nan, Wang, Xuemei, Alatise, Olayiwola M. and Mawby, P. A. (2017) Experimental investigations on the effects of narrow junction temperature cycles on die-attach solder layer in an IGBT module. IEEE Transactions on Power Electronics, 32 (2). pp. 1431-1441. doi:10.1109/TPEL.2016.2546944 ISSN 0885-8993.

Chan, Chun Wa, Li, Fan, Sánchez, Ana M., Mawby, P. A. (Philip A.) and Gammon, P. M. (2017) Comparative study of RESURF Si/SiC LDMOSFETs for high-temperature applications using TCAD modeling. IEEE Transactions on Electron Devices, 64 (9). pp. 3713-3718. doi:10.1109/TED.2017.2719898 ISSN 0018-9383.

Woodend, Lee, Gammon, P. M., Shah, Vishal, Pérez-Tomás, Amador, Li, Fan, Hamilton, Dean P., Myronov, Maksym and Mawby, P. A. (Philip A.) (2017) Cryogenic characterisation and modelling of commercial SiC MOSFETs. Materials Science Forum, 897 . pp. 557-560. doi:10.4028/www.scientific.net/MSF.897.557 ISSN 1662-9752.

2016

Ortiz Gonzalez, Jose Angel, Alatise, Olayiwola M., Nobeen, Nadeesh, Hu, Ji, Ran, Li and Mawby, P. A. (Philip A.) (2016) Electrothermal considerations for power cycling in SiC technologies. In: 9th International Conference on Integrated Power Electronics Systems, Nuremberg, Germany, 08-10 Mar 2016. Published in: Proceedings of CIPS 2016; 9th International Conference on Integrated Power Electronics Systems, 2016 ISBN 9783800741717.

Tang, Yuan, Ran, Li, Alatise, Olayiwola M. and Mawby, P. A. (2016) Improved testing capability of the model assisted testing scheme for modular multilevel converter. IEEE Transactions on Power Electronics, 31 (11). pp. 7823-7836. ISSN 0885-8993.

Hamilton, Dean P., Jennings, Michael R., Pérez-Tomás, Amador, Russell, Stephen A. O., Hindmarsh, Steven A., Fisher, Craig A. and Mawby, P. A. (Philip A.) (2016) High temperature electrical and thermal aging performance and application considerations for SiC power DMOSFETs. IEEE Transactions on Power Electronics, 32 (10). pp. 7967-7979. doi:10.1109/TPEL.2016.2636743 ISSN 0885-8993.

Ortiz Gonzalez, Jose Angel, Ran, Li, Mohamed Motalab Ali Soli, A., Davletzhanova, Zarina, Alatise, Olayiwola M., Mawby, P. A. (Philip A.), Borong, Hu, Zheng, Zeng, Hai, Ren, Li, Hui and Shengyou, Xu (2016) Enabling high reliability power modules : a multidisciplinary task. In: International Symposium on 3D Power Electronics Integration and Manufacturing, McKimmon Center, Raleigh, NC, USA, 13-15 June 2016 ISBN 9781509029402.

Ortiz Gonzalez, Jose Angel, Aliyu, A. M., Alatise, Olayiwola M., Castellazzi, A., Ran, Li and Mawby, P. A. (Philip A.) (2016) Development and characterisation of pressed packaging solutions for high-temperature high-reliability SiC power modules. Microelectronics Reliability, 64 . pp. 434-439. ISSN 0026-2714.

Lai, Wei, Chen, Mingyou, Ran, Li, Alatise, Olayiwola M., Xu, Shengyou and Mawby, P. A. (Philip A.) (2016) Low ΔTj stress cycle effects in IGBT power module die-attach lifetime modelling. IEEE Transactions on Power Electronics, 31 (9). pp. 6575-6585. doi:10.1109/TPEL.2015.2501540 ISSN 0885-8993.

Tang, Yuan, Ran, Li, Alatise, Olayiwola M. and Mawby, P. A. (Philip A.) (2016) Capacitor selection for modular multilevel converter. IEEE Transactions on Industry Applications, 52 (4). 3279 -3293. doi:10.1109/TIA.2016.2533620 ISSN 0093-9994.

Bonyadi, Yeganeh, Gammon, P. M., Bonyadi, Roozbeh, Shah, V. A., Fisher, C. A., Martin, David M. and Mawby, Philip A. (2016) Characterization of 4H-SiC PiN diodes formed on defects identified by PL imaging. Materials Science Forum, 858 . pp. 405-409. doi:10.4028/www.scientific.net/msf.858.405 ISSN 1662-9752.

Rong, Hua, Sharma, Yogesh K., Dai, Tian Xiang, Li, Fan, Jennings, M. R., Russell, Stephen, Martin, David and Mawby, P. A. (Philip A.) (2016) High temperature nitridation of 4H-SiC MOSFETs. Materials Science Forum, 858 . pp. 623-626. doi:10.4028/www.scientific.net/MSF.858.623 ISSN 1662-9752.

Li, Fan, Sharma, Yogesh K., Jennings, M. R., Pérez-Tomás, Amador, Shah, V. A., Rong, Hua, Russell, Stephen, Martin, David and Mawby, P. A. (Philip A.) (2016) Improved channel mobility by oxide nitridation for N-Channel MOSFET on 3C-SiC(100)/Si. Materials Science Forum, 858 . pp. 667-670. doi:10.4028/www.scientific.net/MSF.858.667 ISSN 1662-9752.

Hamilton, Dean P., Hindmarsh, Steven A., York, Stephen J., Walker, David, Russell, Stephen, Jennings, M. R., Fisher, Craig A. and Mawby, P. A. (Philip A.) (2016) Ohmic contact reliability of commercially available SiC MOSFETs isothermally aged for long periods at 300°C in air. Materials Science Forum, 858 . pp. 557-560. doi:10.4028/www.scientific.net/MSF.858.557 ISSN 1662-9752.

Chan, Chun Wa, Bonyadi, Yeganeh, Mawby, P. A. (Philip A.) and Gammon, P. M. (2016) Si/SiC substrates for the implementation of linear-doped power LDMOS studied with device simulation. Materials Science Forum, 858 . pp. 844-847. doi:10.4028/www.scientific.net/MSF.858.844 ISSN 1662-9752.

Lai, Wei, Mawby, P. A. (Philip A.), Qin, Han, Alatise, Olayiwola M., Xu, Shengyou, Chen, Minyou and Ran, Li (2016) Study on the lifetime characteristics of power modules under power cycling conditions. IET Power Electronics, 9 (5). pp. 1045-1052. doi:10.1049/iet-pel.2015.0225 ISSN 1755-4535.

Chan, Chun Wa, Mawby, P. A. and Gammon, P. M. (2016) Analysis of linear-doped Si/SiC power LDMOSFETs based on device simulation. IEEE Transactions on Electron Devices, 63 (6). pp. 2442-2448. doi:10.1109/TED.2016.2550865 ISSN 0018-9383.

Hu, Ji, Alatise, Olayiwola M., Ortiz Gonzalez, Jose Angel, Alexakis, Petros, Ran, Li and Mawby, P. A. (2016) Robustness and balancing of parallel connected power devices : SiC vs. CoolMOS. IEEE Transactions on Industrial Electronics, 63 (4). pp. 2092-2102. doi:10.1109/TIE.2015.2500187 ISSN 0278-0046.

Ortiz Gonzalez, Jose Angel, Alatise, Olayiwola M., Hu, Ji, Ran, Li and Mawby, P. A. (Philip A.) (2016) Temperature sensitive electrical parameters for condition monitoring in SiC power MOSFETs. In: 8th IET International Conference on Power Electronics, Machines and Drives (PEMD 2016), Glasgow, UK, 19-21 April 2016. Published in: 8th IET International Conference on Power Electronics, Machines and Drives (PEMD 2016) ISBN 9781785611889.

Tang, Yuan, Ran, Li, Alatise, Olayiwola M. and Mawby, P. A. (Philip A.) (2016) A model assisted testing scheme for modular multilevel converter. IEEE Transactions on Power Electronics, 31 (1). pp. 165-176. doi:10.1109/TPEL.2015.2411694 ISSN 0885-8993.

Li, Fan, Sharma, Yogesh K., Walker, David, Hindmarsh, Steven A., Jennings, Michael, Martin, David, Fisher, Craig A., Gammon, P. M., Pérez-Tomás, Amador and Mawby, P. A. (2016) 3C-SiC transistor with Ohmic contacts defined at room temperature. IEEE Electron Device Letters . doi:10.1109/LED.2016.2593771 ISSN 0741-3106.

2015

Bonyadi, Roozbeh, Alatise, Olayiwola M., Jahdi, Saeed, Hu, Ji, Ortiz Gonzalez, Jose Angel, Ran, Li and Mawby, P. A. (2015) Compact electrothermal reliability modeling and experimental characterization of bipolar latchup in SiC and CoolMOS power MOSFETs. IEEE Transactions on Power Electronics, 30 (12). pp. 6978-6992. doi:10.1109/TPEL.2015.2388512 ISSN 0885-8993.

Sharma, Yogesh K., Li, Fan, Jennings, M. R., Fisher, Craig A., Pérez-Tomás, Amador, Thomas, Stephen M., Hamilton, Dean P., Russell, Stephen and Mawby, P. A. (2015) High-temperature (1200–1400°C) dry oxidation of 3C-SiC on silicon. Journal of Electronic Materials, 44 (11). pp. 4167-4174. doi:10.1007/s11664-015-3949-4 ISSN 0361-5235.

Li, Fan, Sharma, Yogesh K., Shah, V. A., Jennings, M. R., Pérez-Tomás, Amador, Myronov, Maksym, Fisher, Craig A., Leadley, D. R. (David R.) and Mawby, P. A. (Philip A.) (2015) Electrical activation of nitrogen heavily implanted 3C-SiC(100). Applied surface science, 353 . pp. 958-963. doi:10.1016/j.apsusc.2015.06.169 ISSN 0169-4332.

Jahdi, Saeed, Alatise, Olayiwola M., Ortiz Gonzalez, Jose Angel, Ran, Li and Mawby, P. A. (Philip A.) (2015) Comparative analysis of false turn-ON in silicon bipolar and SiC unipolar power devices. In: Energy Conversion Congress and Exposition (ECCE), 2015 IEEE, 20-24 Sept 2015, Montreal, QC. Published in: 2015 IEEE Energy Conversion Congress and Exposition (ECCE) pp. 2239-2246. ISBN 9781467371513. doi:10.1109/ECCE.2015.7309975 ISSN 2329-3721.

Jahdi, Saeed, Alatise, Olayiwola M., Ortiz Gonzalez, Jose Angel, Gammon, P. M., Ran, Li and Mawby, P. A. (Philip A.) (2015) Investigation of parasitic turn-ON in silicon IGBT and Silicon Carbide MOSFET devices : a technology evaluation. In: Power Electronics and Applications (EPE'15 ECCE-Europe), 2015 17th European Conference on, Geneva, Switzerland, 8-10 Sep 2015. Published in: 2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe) ISBN 9789075815221. doi:10.1109/EPE.2015.7309093

Bonyadi, Roozbeh, Alatise, Olayiwola M., Jahdi, Saeed, Ortiz Gonzalez, Jose Angel, Davletzhanova, Zarina, Ran, Li, Michaelides, Alexandros and Mawby, P. A. (Philip A.) (2015) Physics-based modelling and experimental characterisation of parasitic turn-on in IGBTs. In: Power Electronics and Applications (EPE'15 ECCE-Europe), 2015 17th European Conference on, Geneva, Switzerland, 8-10 Sep 2015. Published in: 2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe) ISBN 9789075815221. doi:10.1109/EPE.2015.7309179

Jahdi, Saeed, Alatise, Olayiwola M., Ortiz Gonzalez, Jose Angel, Bonyadi, Roozbeh, Ran, Li and Mawby, P. A. (Philip A.) (2015) Temperature and switching rate dependence of crosstalk in Si-IGBT and SiC power modules. IEEE Transactions on Industrial Electronics, 63 (2). pp. 849-863. doi:10.1109/TIE.2015.2491880 ISSN 0278-0046.

Hu, Ji, Alatise, Olayiwola M., Ortiz Gonzalez, Jose Angel, Bonyadi, Roozbeh, Ran, Li and Mawby, P. A. (2015) The effect of electrothermal nonuniformities on parallel connected SiC power devices under unclamped and clamped inductive switching. IEEE Transactions on Power Electronics, 31 (6). pp. 4526-4535. doi:10.1109/TPEL.2015.2477831 ISSN 0885-8993.

Alexakis, Petros, Alatise, Olayiwola M., Hu, Ji, Jahdi, Saeed, Ortiz Gonzalez, Jose Angel, Ran, Li and Mawby, P. A. (Philip A.) (2015) Analysis of power device failure under avalanche mode conduction. In: Power Electronics and ECCE Asia (ICPE-ECCE Asia), 2015 9th International Conference on, Seoul, South Korea, 1-5 Jun 2015. Published in: 2015 9th International Conference on Power Electronics and ECCE Asia (ICPE-ECCE Asia) pp. 1833-1839. ISBN 9788957082546. doi:10.1109/ICPE.2015.7168028 ISSN 2150-6078 .

Bonyadi, Roozbeh, Alatise, Olayiwola M., Jahdi, Saeed, Ortiz Gonzalez, Jose Angel, Ran, Li and Mawby, P. A. (Philip A.) (2015) Modeling of temperature dependent parasitic gate turn-on in silicon IGBTs. In: Power Electronics and ECCE Asia (ICPE-ECCE Asia), 2015 9th International Conference on, Seoul, South Korea, 1-5 Jun 2015. Published in: 2015 9th International Conference on Power Electronics and ECCE Asia (ICPE-ECCE Asia) pp. 560-566. ISBN 9788957082546. doi:10.1109/ICPE.2015.7167839 ISSN 2150-6078.

Chen, Han, Gammon, P. M., Shah, V. A., Fisher, Craig A., Chan, Chun Wa, Jahdi, Saeed, Hamilton, Dean P., Jennings, M. R., Myronov, Maksym, Leadley, D. R. (David R.) and Mawby, P. A. (Philip A.) (2015) Cryogenic characterization of commercial SiC Power MOSFETs. In: Silicon Carbide and Related Materials 2014, Grenoble, France, Sep 2014. Published in: Materials Science Forum, 821-823 pp. 777-780. doi:10.4028/www.scientific.net/MSF.821-823.777 ISSN 1662-9752.

Colston, Gerard B., Myronov, Maksym, Rhead, Stephen, Shah, V. A., Sharma, Yogesh K., Mawby, P. A. (Philip A.) and Leadley, D. R. (David R.) (2015) Si1-xCx/Si(001) heterostructures for use in Schottky diode rectifiers demonstrating high breakdown voltage and negligible leakage current. Materials Science Forum, 821-823 . pp. 571-574. doi:10.4028/www.scientific.net/MSF.821-823.571 ISSN 1662-9752.

Chan, Chun Wa, Gammon, P. M., Shah, V. A., Chen, Han, Jennings, M. R., Fisher, Craig A., Pérez-Tomás, Amador, Myronov, Maksym and Mawby, P. A. (Philip A.) (2015) Simulations of a lateral PiN diode on SiSiC substrate for high temperature applications. Materials Research Forum, 821 (7). pp. 624-627. doi:10.4028/www.scientific.net/MSF.821-823.624

Jahdi, Saeed, Alatise, Olayiwola M., Bonyadi, Roozbeh, Alexakis, Petros, Fisher, Craig A., Ortiz Gonzalez, Jose Angel, Ran, Li and Mawby, P. A. (Philip A.) (2015) An analysis of the switching performance and robustness of power MOSFETs body diodes : a technology evaluation. IEEE Transactions on Power Electronics, Volume 30 (Number 5). pp. 2383-2394. doi:10.1109/TPEL.2014.2338792 ISSN 0885-8993.

Jahdi, Saeed, Alatise, Olayiwola M., Ran, Li and Mawby, P. A. (Philip A.) (2015) Accurate analytical modeling for switching energy of PiN diodes reverse recovery. IEEE Transactions on Industrial Electronics, 62 (3). pp. 1461-1470. doi:10.1109/TIE.2014.2347936 ISSN 0278-0046.

Jahdi, Saeed, Alatise, Olayiwola M., Alexakis, Petros, Ran, Li and Mawby, P. A. (Philip A.) (2015) The impact of temperature and switching rate on the dynamic characteristics of silicon carbide schottky barrier diodes and MOSFETs. IEEE Transactions on Industrial Electronics, Volume 62 (Number 1). pp. 163-171. doi:10.1109/TIE.2014.2326999 ISSN 0278-0046.

Jahdi, Saeed, Alatise, Olayiwola M., Ran, Li and Mawby, P. A. (Philip A.) (2015) Analytical modeling of switching energy of silicon carbide Schottky diodes as functions of dIDS/dt and temperature. IEEE Transactions on Power Electronics, 30 (6). pp. 3345-3355. doi:10.1109/TPEL.2014.2333474 ISSN 0885-8993.

Hu, Ji, Alatise, Olayiwola M., Ortiz Gonzalez, Jose Angel, Alexakis, Petros, Ran, Li and Mawby, P. A. (Philip A.) (2015) Finite element modelling and experimental characterisation of paralleled SiC MOSFET failure under avalanche mode conduction. In: Power Electronics and Applications (EPE'15 ECCE-Europe), 2015 17th European Conference on, Geneva, Switzerland, 8-10 Sep 2015. Published in: 2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe) pp. 1-9. doi:10.1109/EPE.2015.7309180

Gammon, P. M., Chan, Chun Wa and Mawby, P. A. (Philip A.) (2015) Simulation of a new hybrid Si/SiC power device for harsh environment applications. In: High Temperature Electronics Network (HiTEN), Cambridge, Jul 2015. Published in: HiTEN , 2015 (HiTEN). pp. 190-194.

2014

Jahdi, Saeed, Alatise, Olayiwola M., Alexakis, Petros, Ran, Li and Mawby, P. A. (Philip A.) (2014) Electrothermal modeling and characterization of SiC Schottky and silicon PiN diodes switching transients. In: Energy Conversion Congress and Exposition (ECCE), 2014 IEEE, Pittsburgh, PA, 14-18 Sep 2014. Published in: 2014 IEEE Energy Conversion Congress and Exposition (ECCE) pp. 2817-2823. ISBN 9781479957767. doi:10.1109/ECCE.2014.6953780 ISSN 2329-3721 .

Bonyadi, Roozbeh, Alatise, Olayiwola M., Jahdi, Saeed, Hu, Ji, Evans, L. and Mawby, P. A. (Philip A.) (2014) Investigating the reliability of SiC MOSFET body diodes using Fourier series modelling. In: Energy Conversion Congress and Exposition (ECCE), 2014 IEEE, Pittsburgh, PA, 14-18 Sept. 2014. Published in: 2014 IEEE Energy Conversion Congress and Exposition (ECCE) pp. 443-448. ISBN 9781479957767. doi:10.1109/ECCE.2014.6953427 ISSN 2329-3721.

Jahdi, Saeed, Alatise, Olayiwola M. and Mawby, P. A. (Philip A.) (2014) Modeling of turn-OFF transient energy in IGBT controlled silicon PiN diodes. In: Power Electronics and Applications (EPE'14-ECCE Europe), 2014 16th European Conference on, Lappeenranta, Finland, 26-28 Aug 2014. Published in: 2014 16th European Conference on Power Electronics and Applications (EPE'14-ECCE Europe) ISBN 9781479930159. doi:10.1109/EPE.2014.6911007

Jahdi, Saeed, Alatise, Olayiwola M., Fisher, Craig A., Ran, Li and Mawby, P. A. (Philip A.) (2014) An evaluation of silicon carbide unipolar technologies for electric vehicle drive-trains. IEEE Journal of Emerging and Selected Topics in Power Electronics, Volume 2 (Number 3). pp. 517-528. doi:10.1109/JESTPE.2014.2307492 ISSN 2168-6777.

Fisher, Craig A., Jennings, M. R., Sharma, Yogesh K., Hamilton, Dean P., Gammon, P. M., Pérez-Tomás, Amador, Thomas, Stephen M., Burrows, S. E. (Susan E.) and Mawby, P. A. (Philip A.) (2014) Improved performance of 4H-SiC PiN diodes using a novel combined high temperature oxidation and annealing process. IEEE Transactions on Semiconductor Manufacturing, Volume 27 (Number 3). pp. 443-451. doi:10.1109/TSM.2014.2336701 ISSN 0894-6507.

Fisher, Craig A., Jennings, M. R., Sharma, Yogesh K., Hamilton, Dean P., Li, Fan, Gammon, P. M., Pérez-Tomás, Amador, Thomas, Stephen M., Burrows, S. E. (Susan E.) and Mawby, P. A. (Philip A.) (2014) On the application of novel high temperature oxidation processes to enhance the performance of high voltage silicon carbide PiN diodes. In: 2014 16th European Conference on Power Electronics and Applications (EPE'14-ECCE Europe), , Finland, 26-28 Aug 2014. Published in: 2014 16th European Conference on Power Electronics and Applications (EPE'14-ECCE Europe), pp. 1-9. doi:10.1109/EPE.2014.6910738

Thomas, S. M., Sharma, Yogesh K., Crouch, M. A., Fisher, Craig A., Pérez-Tomás, Amador, Jennings, M. R. and Mawby, P. A. (Philip A.) (2014) Enhanced field effect mobility on 4H-SiC by oxidation at 1500◦C. IEEE Journal of the Electron Devices Society, 2 (5). pp. 114-117. ISSN 2168-6734.

Alexakis, Petros, Alatise, Olayiwola M., Hu, Ji, Jahdi, Saeed, Ran, Li and Mawby, P. A. (2014) Improved electrothermal ruggedness in SiC MOSFETs compared with silicon IGBTs. IEEE Transactions on Electron Devices, Volume 61 (Number 7). pp. 2278-2286. doi:10.1109/TED.2014.2323152 ISSN 0018-9383.

Rong, Hua, Sharma, Yogesh K., Liu, Fangjun, Jennings, M. R. and Mawby, P. A. (Philip A.) (2014) 4H-SiC Diode Avalanche Breakdown Voltage Estimation by Simulation and Junction Termination Extension Analysis. Materials Science Forum, 778-780 . pp. 824-827. doi:10.4028/www.scientific.net/MSF.778-780.824 ISSN 1662-9752.

Thomas, Stephen M., Jennings, M. R., Sharma, Yogesh K., Fisher, Craig A. and Mawby, P. A. (Philip A.) (2014) Impact of the oxidation temperature on the interface trap density in 4H-SiC MOS capacitors. Materials Science Forum, Volume 778-780 . pp. 599-602. doi:10.4028/www.scientific.net/MSF.778-780.599 ISSN 1662-9752.

Jennings, M. R., Fisher, Craig A., Walker, David, Sánchez, Ana M., Pérez-Tomás, Amador, Hamilton, Dean P., Gammon, P. M., Burrows, S. E. (Susan E.), Thomas, Stephen M., Sharma, Yogesh K., Li, Fan and Mawby, P. A. (Philip A.) (2014) On the Ti3SiC2 metallic phase formation for robust p-type 4H-SiC ohmic contacts. Materials Science Forum, Volume 778-780 . pp. 693-696. doi:10.4028/www.scientific.net/MSF.778-780.693 ISSN 1662-9752.

Jahdi, Saeed, Alatise, Olayiwola M. and Mawby, P. A. (Philip A.) (2014) Temperature and dIDS/dt dependence of the switching energy of SiC schottky diodes in clamped inductive switching applications. Materials Science Forum, Volume 778-780 . pp. 816-819. doi:10.4028/www.scientific.net/MSF.778-780.816 ISSN 1662-9752.

Sharma, Yogesh K., Ahyi, Ayayi C., Isaacs-Smith, Tamara, Modic, Aaron, Xu, Yi, Granfukel, Eric, Jennings, M. R., Fisher, Craig A., Thomas, Stephen M., Mawby, P. A. (Philip A.), Dhar, Sarit, Feldman, Leonard C. and Williams, John (2014) Thin PSG process for 4H-SiC MOSFET. Materials Science Forum, Volume 778-780 . pp. 513-516. doi:10.4028/www.scientific.net/MSF.778-780.513 ISSN 1662-9752.

Gammon, P. M., Fisher, Craig A., Shah, V. A., Jennings, M. R., Pérez-Tomás, Amador, Burrows, S. E. (Susan E.), Myronov, Maksym, Leadley, D. R. (David R.) and Mawby, P. A. (Philip A.) (2014) The cryogenic testing and characterisation of SiC diodes. Materials Science Forum, 778-780 . pp. 863-866. doi:10.4028/www.scientific.net/MSF.778-780.863 ISSN 1662-9752.

Jahdi, Saeed, Alatise, Olayiwola M. and Mawby, P. A. (Philip A.) (2014) The impact of silicon carbide technology on grid-connected Distributed Energy resources. In: 2013 4th IEEE/PES Innovative Smart Grid Technologies Europe (ISGT EUROPE),, Lyngby, Denmark, 6-9 Oct 2013. Published in: 2013 4th IEEE/PES Innovative Smart Grid Technologies Europe (ISGT EUROPE), ISBN 9781479929849. doi:10.1109/ISGTEurope.2013.6695233 ISSN 2165-4816 .

Tang, Yuan, Ran, Li, Alatise, Olayiwola M. and Mawby, P. A. (Philip A.) (2014) Capacitor selection for modular multilevel converter. In: Energy Conversion Congress and Exposition (ECCE), 2014 IEEE, Pittsburgh, PA, 14-18 Sep 2014. Published in: 2014 IEEE Energy Conversion Congress and Exposition (ECCE) pp. 2080-2087. doi:10.1109/ECCE.2014.6953677

Hamilton, Dean P., Jennings, M. R. (Michael R.), Sharma, Yogesh K., Fisher, Craig A., Alatise, Olayiwola M. and Mawby, P. A. (Philip A.) (2014) Evaluation of commercially available SiC devices and packaging materials for operation up to 350°C. In: Energy Conversion Congress and Exposition (ECCE), 2014 IEEE, Pittsburgh, PA, 14-18 Sep 2014. Published in: 2014 IEEE Energy Conversion Congress and Exposition (ECCE) pp. 4381-4387. doi:10.1109/ECCE.2014.6953720

2013

Gammon, P. M., Pérez-Tomás, Amador, Shah, V. A., Vavasour, O., Donchev, E., Pang, J. S., Myronov, Maksym, Fisher, Craig A., Jennings, M. R., Leadley, D. R. (David R.) and Mawby, P. A. (Philip A.) (2013) Modelling the inhomogeneous SiC Schottky interface. Journal of Applied Physics, Volume 114 (Number 22). Article number 223704. doi:10.1063/1.4842096 ISSN 0021-8979.

Jahdi, Saeed, Alatise, Olayiwola M. and Mawby, P. A. (2013) On the performance of voltage source converters based on silicon carbide technology. In: 2013 35th International Telecommunications Energy Conference 'Smart Power and Efficiency' (INTELEC), Hamburg, Germany, 13-17 Oct 2013. Published in: Proceedings of 2013 35th International Telecommunications Energy Conference 'Smart Power and Efficiency' (INTELEC) ISBN 9783800735006.

Huang, Hui and Mawby, P. A. (Philip A.) (2013) A lifetime estimation technique for voltage source inverters. IEEE Transactions on Power Electronics, Volume 28 (Number 8). pp. 4113-4119. doi:10.1109/TPEL.2012.2229472 ISSN 0885-8993.

Gammon, P. M., Pérez-Tomás, Amador, Jennings, M. R., Sánchez, Ana M., Fisher, Craig A., Thomas, Stephen M., Donnellan, Benedict T. and Mawby, P. A. (Philip A.) (2013) Bipolar conduction across a wafer bonded p-n Si/SiC heterojunction. Materials Science Forum, 740-742 . pp. 1006-1009. doi:10.4028/www.scientific.net/MSF.740-742.1006 ISSN 1662-9752.

Jennings, M. R., Pérez-Tomás, Amador, Severino, Andrea, Ward, Peter, Bashir, Arif, Fisher, Craig A., Thomas, Stephen M., Gammon, P. M., Donnellan, Benedict T., Rong, Hua, Hamilton, Dean P. and Mawby, P. A. (Philip A.) (2013) Innovative 3C-SiC on SiC via direct wafer bonding. Materials Science Forum, Volume 740-742 . pp. 271-274. doi:10.4028/www.scientific.net/MSF.740-742.271 ISSN 1662-9752.

Jennings, M. R., Pérez-Tomás, Amador, Severino, Andrea, Ward, Peter J., Bashir, Arif, Fisher, Craig A., Thomas, Stephen M., Gammon, P. M., Donnellan, Benedict T., Rong, Hua, Hamilton, Dean P. and Mawby, P. A. (Philip A.) (2013) Innovative 3C-SiC on SiC via direct wafer bonding. In: 9th European Conference on Silicon Carbide and Related Materials, ECSCRM 2012, St. Petersburg, Russian Federation, 2 - 6 Sept 2012. Published in: Materials Science Forum, 740-742 pp. 271-274. ISBN 978-303785624-6. doi:10.4028/www.scientific.net/MSF.740-742.271 ISSN 1662-9752.

Gammon, P. M., Pérez-Tomás, Amador, Jennings, M. R., Sánchez, Ana M., Fisher, Craig A., Thomas, Stephen M., Donnellan, Benedict T. and Mawby, P. A. (Philip A.) (2013) Bipolar conduction across a wafer bonded p-n Si/SiC heterojunction. In: 9th European Conference on Silicon Carbide and Related Materials, ECSCRM 2012, St. Petersburg, Russian Federation, 2 - 6 Sept 2012. Published in: Materials Science Forum, Volume 740-742 pp. 1006-1009. doi:10.4028/www.scientific.net/MSF.740-742.1006 ISSN 1662-9752.

Alexakis, Petros, Alatise, Olayiwola M., Ran, Li and Mawby, P. A. (Philip A.) (2013) Modeling power converters using hard switched silicon carbide MOSFETs and Schottky barrier diodes. In: Power Electronics and Applications (EPE), 2013 15th European Conference on, Lille, France, 2-6 Sep 2013. Published in: 2013 15th European Conference on Power Electronics and Applications (EPE) pp. 1-9. doi:10.1109/EPE.2013.6631758

Gammon, P. M., Pérez-Tomás, Amador, Shah, V. A., Vavasour, O., Donchev, E., Pang, J. S., Myronov, Maksym, Fisher, Craig A., Jennings, M. R., Leadley, D. R. (David R.) and Mawby, P. A. (Philip A.) (2013) Modelling the inhomogeneous SiC Schottky interface. Journal of Applied Physics, 114 (22). p. 223704. 223704. doi:10.1063/1.4842096 ISSN 0021-8979.

2012

Gammon, P. M., Donchev, E., Pérez-Tomás, Amador, Shah, V. A., Pang, J. S., Petrov, P. K. (Peter K.), Jennings, M. R., Fisher, Craig A., Mawby, P. A. (Philip A.), Leadley, D. R. (David R.) and Alford, Neil McN. (2012) A study of temperature-related non-linearity at the metal-silicon interface. Journal of Applied Physics, Vol.112 . 114513 . doi:http://dx.doi.org/10.1063/1.4768718 ISSN 0021-8979.

Alatise, Olayiwola M., Parker-Allotey, Nii-Adotei, Hamilton, Dean P. and Mawby, P. A. (Philip A.) (2012) The impact of parasitic inductance on the performance of silicon-carbide Schottky barrier diodes. IEEE Transactions on Power Electronics, Vol.27 (No.8). pp. 3826-3833. doi:10.1109/TPEL.2012.2183390 ISSN 0885-8993.

Swan, I. R. (Ian R.), Bryant, Angus T. and Mawby, P. A. (Philip A.) (2012) Fast 3D thermal simulation of power module packaging. International Journal of Numerical Modelling : Electronic Networks, Devices and Fields, Vol.25 (No.4). pp. 378-399. doi:10.1002/jnm.841 ISSN 0894-3370.

Alatise, Olayiwola M., Parker-Allotey, Nii-Adotei and Mawby, P. A. (Philip A.) (2012) Modeling the electrothermal stability of power MOSFETs during switching transients. IEEE Electron Device Letters, Volume 33 (Number 7). pp. 1039-1041. doi:10.1109/LED.2012.2196671 ISSN 0741-3106.

Donnellan, B. T., Roberts, G. J., Mawby, P. A. (Philip A.) and Bryant, Angus T. (2012) Modelling of current sharing in paralleled current limiting superjunction MOSFETs with common gate drives. Microelectronics Reliability, Vol.52 (No.3). pp. 497-502. doi:10.1016/j.microrel.2011.12.007 ISSN 0026-2714.

Ran, Li, Mawby, P. A. (Philip A.), McKeever, Paul and Konaklieva, Syliva (2012) Condition monitoring of power electronics for offshore wind. Engineering & Technology Reference . doi:10.1049/etr.2014.0004 ISSN 2056-4007.

Jennings, M. R., Pérez-Tomás, Amador, Bashir, A., Sánchez, Ana M., Severino, A., Ward, Peter J., Thomas, S. M., Fisher, Craig A., Gammon, P. M., Zabala, M., Burrows, S. E., Donnellan, B., Hamilton, D. P., Walker, David and Mawby, P. A. (2012) Bow free 4'' diameter 3C-SiC Epilayers formed upon wafer-bonded Si/SiC substrates. ECS Solid State Letters, Volume 1 (Number 6). P85-P88. doi:10.1149/2.007206ssl ISSN 2162-8742.

Xiang, Dawei, Ran, Li, Tavner, Peter, Yang, Shaoyong, Bryant, Angus and Mawby, P. A. (Philip A.) (2012) Condition monitoring power module solder fatigue using inverter harmonic identification. IEEE Transactions on Power Electronics, Volume 27 (Number 1). pp. 235-247. doi:10.1109/TPEL.2011.2160988 ISSN 0885-8993.

Parker-Allotey, Nii-Adotei, Hamilton, Dean P., Alatise, Olayiwola M., Jennings, M. R., Mawby, P. A. (Philip A.), Nash, Robert Alastair and Magill, Rob (2012) Improved energy efficiency using an IGBT/SiC-Schottky diode pair. In: International Conference on Silicon Carbide and Related Materials 2011, Cleveland, Ohio, U.S.A., Sep 11-16, 2011. Published in: Materials Science Forum, 717-720 pp. 1147-1150. doi:10.4028/www.scientific.net/MSF.717-720.1147 ISSN 1662-9752.

Donnellan, B. T., Mawby, P. A. (Philip A.), Rahimo, M. and Storasta, L. (2012) Introducing a 1200V vertical merged IGBT and Power MOSFET : The HUBFET. In: 27th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2012, Orlando, FL, 5-9 Feb 2012. Published in: Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC pp. 152-156. doi:10.1109/APEC.2012.6165812 ISSN 9781457712159.

Fisher, Craig A., Jennings, M. R., Bryant, Angus T., Pérez-Tomás, Amador, Gammon, P. M., Brosselard, Pierre, Godignon, Phillippe and Mawby, P. A. (Philip A.) (2012) Physical modelling of 4H-SiC PiN diodes. Materials Science Forum, Volume 717-720 . pp. 993-996. doi:10.4028/www.scientific.net/MSF.717-720.993 ISSN 1662-9752.

Alatise, Olayiwola M., Parker-Allotey, Nii-Adotei and Mawby, P. A. (Philip A.) (2012) The dynamic performance of SiC Schottky barrier diodes with parasitic inductances over a wide temperature range. In: 6th IET International Conference on Power Electronics, Machines and Drives (PEMD 2012) , Bristol, UK., 27-29 Mar 2012. Published in: The conference prceedings for the IET Power Electronics, Machines and Drives : 27 - 29 March 2012 pp. 1-6. ISBN 9781849196161. doi:10.1049/cp.2012.0208

2011

Bryant, Angus T., Yang, Shaoyong, Mawby, P. A. (Philip A.), Xiang, Dawei, Ran, Li, Tavner, Peter and Palmer, Patrick R. (2011) Investigation into IGBT dV/dt during turn-off and its temperature dependence. IEEE Transactions on Power Electronics, Volume 26 (Number 10). pp. 3019-3031. doi:10.1109/TPEL.2011.2125803 ISSN 0885-8993.

Alatise, Olayiwola M., Parker-Allotey, Nii-Adotei, Jennings, M. R., Mawby, P. A. (Philip A.), Kennedy, Ian and Petkos, George (2011) Modeling the impact of the trench depth on the gate-drain capacitance in power MOSFETs. IEEE Electron Device Letters, Vol.32 (No.9). pp. 1269-1271. doi:10.1109/LED.2011.2159476 ISSN 0741-3106.

Yang, Shaoyong, Bryant, Angus T., Mawby, P. A., Xiang, Dawei, Ran, Li and Tavner, Peter J. (2011) An industry-based survey of reliability in power electronic converters. IEEE Transactions on Industry Applications, Vol.47 (No.3). pp. 1441-1451. doi:10.1109/TIA.2011.2124436 ISSN 0093-9994.

Gammon, P. M., Pérez-Tomás, Amador, Jennings, M. R., Guy, O. J., Rimmer, N., Llobet, J., Mestres, Narcis, Godignon, P., Placidi, Marcel, Zabala, M., Covington, James A. and Mawby, P. A. (2011) Characterisation of HfO2/Si/SiC MOS capacitors. Materials Science Forum, Vol.679-680 . pp. 674-677. doi:10.4028/www.scientific.net/MSF.679-680.674 ISSN 1662-9752.

Parker-Allotey, Nii-Adotei, Alatise, Olayiwola M., Hamilton, Dean P., Jennings, M. R., Mawby, P. A. (Philip A.), Nash, Robert Alastair and Magill, Rob (2011) Conduction and switching loss comparison between an IGBT/Si-PiN diode pair and an IGBT/SiC-Schottky diode pair. In: IEEE Innovative Smart Grid Technologies Conference (ISGT) , Manchester Central Convention Complex, Manchester, United Kingdom, Dec 5-7, 2011. Published in: Innovative Smart Grid Technologies (ISGT Europe), 2011 2nd IEEE PES International Conference and Exhibition on pp. 1-6. doi:10.1109/ISGTEurope.2011.6162688 ISSN 2165-4816.

Xiang, D. W., Ran, Li, Tavner, P. J., Bryant , A., Yang, S. Y. and Mawby, P. A. (Philip A.) (2011) Monitoring solder fatigue in a power module using case-above-ambient temperature rise. IEEE Transactions on Industry Applications, 47 (6). pp. 2578-2591. doi:10.1109/TIA.2011.2168556 ISSN 0093-9994.

Alatise, Olayiwola M., Parker-Allotey, Nii-Adotei and Mawby, P. A. (Philip A.) (2011) Super-junction trench MOSFETs for improved energy conversion efficiency. In: IEEE Innovative Smart Grid Technologies Conference (ISGT) , Manchester Central Convention Complex, Manchester, United Kingdom, Dec 5-7, 2011. Published in: Innovative Smart Grid Technologies (ISGT Europe), 2011 2nd IEEE PES International Conference and Exhibition on pp. 1-5. doi:10.1109/ISGTEurope.2011.6162631 ISSN 2165-4816.

Alatise, Olayiwola M., Parker-Allotey, Nii-Adotei, Jennings, M. R., Mawby, P. A. (Philip A.), Kennedy, Ian and Petkos, George (2011) Trench depth optimization for energy efficient discrete power trench MOSFETs. In: The 41st European Solid State Device Research Conference (ESSDERC), Finlandia Hall, Helsinki, Finland, Sep 12-16, 2011. Published in: Solid-State Device Research Conference (ESSDERC), 2011 Proceedings of the European pp. 291-294. doi:10.1109/ESSDERC.2011.6044177 ISSN 1930-8876.

2010

Gammon, P. M., Pérez-Tomás, Amador, Jennings, M. R., Guy, O. J., Rimmer, N., Llobet, J., Mestres, N., Godignon, P., Placidi, M., Zabala, M., Covington, James A. and Mawby, P. A. (2010) Integration of HfO2 on Si/SiC heterojunctions for the gate architecture of SiC power devices. Applied Physics Letters, Vol.97 (No.1). 013506. doi:10.1063/1.3462932 ISSN 0003-6951.

Gammon, P. M., Pérez-Tomás, Amador, Jennings, M. R., Shah, V. A., Boden, S. A., Davis, M. C., Burrows, S. E., Wilson, Neil R., Roberts, G. J., Covington, James A. and Mawby, P. A. (2010) Interface characteristics of n-n and p-n Ge/SiC heterojunction diodes formed by molecular beam epitaxy deposition. Journal of Applied Physics, Vol.107 (No.12). p. 124512. doi:10.1063/1.3449057 ISSN 0021-8979.

Yang, Shaoyong, Xiang, Dawei, Bryant, Angus T., Mawby, P. A., Ran, Li and Tavner, Peter J. (2010) Condition monitoring for device reliability in power electronic converters : a review. IEEE Transactions on Power Electronics, Volume 25 (Number 11). pp. 2734-2752. doi:10.1109/TPEL.2010.2049377 ISSN 0885-8993.

Gammon, P. M., Pérez-Tomás, Amador, Jennings, M. R., Roberts, G. J., Shah, V. A., Covington, James A. and Mawby, P. A. (2010) Germanium-silicon carbide heterojunction diodes - a study in device characteristics with increasing layer thickness and deposition temperature. In: 13th International Conference on Silicon Carbide and Related Materials, Nurnberg, Germany, October 11-16, 2009. Published in: Materials Science Forum, Vol.645-648 pp. 889-892. ISBN *****************. doi:10.4028/www.scientific.net/MSF.645-648.889 ISSN 0255-5476.

Leong, K. K., Bryant, Angus T. and Mawby, P. A. (Philip A.) (2010) Power MOSFET operation at cryogenic temperatures : comparison between HEXFET (R), MDMesh (TM) and CoolMOS (TM). In: 22nd International Symposium on Power Semiconductor Devices and ICs, Hiroshima, Japan, 06-10 Jun 2010 . Published in: Proceedings of the International Symposium on Power Semiconductor Devices & ICs pp. 209-212. ISSN 1943-653X.

Pérez-Tomás, Amador, Jennings, M. R., Gammon, P. M., Shah, V. A., Mawby, P. A. (Philip A.), Guy, O. J. and Hammond, R. (2010) Si on SiC, a novel platform for MOS power devices. In: 40th European Solid State Device Research Conference (ESSDERC), Seville, Spain, Sep 13-17, 2010

Jennings, M. R., Pérez-Tomás, Amador, Guy, O. J., Lodzinski, M., Gammon, P. M., Burrows, S., Covington, James A. and Mawby, P. A. (2010) Silicon-on-SiC, a novel semiconductor structure for power devices. In: 13th International Conference on Silicon Carbide and Related Materials, Nurnberg, Germany, October 11-16, 2009. Published in: Materials Science Forum, Vol.645-648 pp. 1243-1246. doi:10.4028/www.scientific.net/MSF.645-648.1243 ISSN 0255-5476.

2009

Gammon, P. M., Pérez-Tomás, Amador, Shah, V. A., Roberts, G. J., Jennings, M. R., Covington, James A. and Mawby, P. A. (2009) Analysis of inhomogeneous Ge/SiC heterojunction diodes. Journal of Applied Physics, Vol.106 (No.9). Article no. 093708. doi:10.1063/1.3255976 ISSN 0021-8979.

Tong, C. F., Mawby, P. A., Covington, James A. and Pérez-Tomás, Amador (2009) Investigation on split-gate RSO MOSFET for 30V breakdown. In: 9th International Seminar on Power Semiconductors 2008 (ISPS 2008), Prague, Czech Republic, Aug 27-29, 2008. Published in: Proceedings of the 9th International Seminar on Power Semiconductors 2008 (ISPS 2008) pp. 97-102.

Pérez-Tomás, Amador, Lodzinski, M., Guy, O. J., Jennings, M. R., Placidi, M., Llobet, J., Gammon, P. M., Davis, M. C., Covington, James A., Burrows, S. E. and Mawby, P. A. (2009) Si/SiC bonded wafer: a route to carbon free SiO2 on SiC. Applied Physics Letters, Vol.94 (No.10). Article: 103510. doi:10.1063/1.3099018 ISSN 0003-6951.

Swan, I. R. (Ian R.), Bryant, A. T., Parker-Allotey, Nii-Adotei and Mawby, P. A. (Philip A.) (2009) 3-D thermal simulation of power module packaging. In: IEEE Energy Conversion Congress and Exposition, San Jose, CA, Sepbember 20-24, 2009. Published in: 2009 IEEE Energy Conversion Congress and Exposition, Vols. 1-6 pp. 1185-1192. ISBN 978-1-4244-2892-2. doi:10.1109/ECCE.2009.5316235

Ahmed, M. M. R. and Mawby, P. A. (Philip A.) (2009) Design specification of a 270 V 100 A solid-state power controller suitable for aerospace applications. In: 13th European Conference on Power Electronics and Applications (EPE 2009), Barcelona, SPAIN, September 08-10, 2009 pp. 5884-5891. ISBN 9781424444328.

Tong, C. F., Mawby, P. A. and Covington, James A. (2009) 'Field balanced' SG-RSO structure showing tremendous potential for low voltage trench MOSFETs. In: 13th European Conference on Power Electronics and Applications (EPE 2009), Barcelona, Spain, September 08-10, 2009. Published in: EPE: 2009 13th European Conference on Power Electronics and Applications, Vols.1-9 pp. 5471-5475. ISBN 978-1-4244-4432-8.

Guy, O. J., Pérez-Tomás, Amador, Jennings, M. R., Lodzinski, M., Castaing, A., Mawby, P. A., Covington, James A., Wilks, S. P., Hammond, R., Connolly, D., Jones, S., Hopkins, J., Wilby, T., Rimmer, N., Baker, K., Conway, S. and Evans, S. (2009) Investigation of Si/4H-SiC hetero-junction growth and electrical properties. In: 7th European Conference on Silicon Carbide and Related Materials, Barcelona, Spain, September 07-11, 2008. Published in: Materials Science Forum, Vol.615-617 pp. 443-446. doi:10.4028/www.scientific.net/MSF.615-617.443 ISSN 1662-9752.

Bryant, Angus T., Jennings, M. R., Parker-Allotey, Nii-Adotei, Mawby, P. A. (Philip A.), Pérez-Tomás, Amador, Brosselard, P., Godignon, P., Jorda, X., Milian, J., Palmer, P. R., Santi, E. and Hudgins, J. L. (2009) Physical modelling of large area 4H-SiC PiN diodes. In: IEEE Energy Conversion Congress and Exposition, San Jose, CA, September 20-24, 2009. Published in: 2009 IEEE Energy Conversion Congress and Exposition, Vols. 1-6 pp. 494-501. ISBN 978-1-4244-2892-2. doi:10.1109/ECCE.2009.5316233

Tong, C. F., Cortes, I., Mawby, P. A., Covington, James A. and Morancho, F. (2009) Static and dynamic analysis of split-gate. RESURF stepped oxide (RSO) MOSFETs for 35 V applications. In: 7th Spanish Conference on Electron Devices, Univ Santiago de Compostelea, Santiago de Compostela, Spain, February 11-13, 2009. Published in: PROCEEDINGS OF THE 2009 SPANISH CONFERENCE ON ELECTRON DEVICES pp. 250-253. ISBN 978-1-4244-2838-0. doi:10.1109/SCED.2009.4800478

Yang, Shaoyong, Bryant, Angus T., Mawby, P. A. (Philip A.), Xiang, Dawei, Ran, Li and Tavner, Peter (2009) An industry-based survey of reliability in power electronic converters. In: IEEE Energy Conversion Congress and Exposition, San Jose, CA, 20-24 Sep 2009. Published in: 2009 IEEE Energy Conversion Congress and Exposition, Vols. 1-6, Volume 1-6 pp. 2612-2618. ISBN 9781424428922. doi:10.1109/ECCE.2009.5316356

2008

Gammon, P. M., Pérez-Tomás, Amador, Jennings, M. R., Roberts, G. J., Davis, M. C., Shah, V. A., Burrows, S. E., Wilson, Neil R., Covington, James A. and Mawby, P. A. (2008) Characterization of n-n Ge/SiC heterojunction diodes. Applied Physics Letters, Vol.93 (No.11). Article: 112104. doi:10.1063/1.2987421 ISSN 0003-6951.

Jennings, M. R., Pérez-Tomás, Amador, Guy, O. J., Hammond, Richard, Burrows, S. E., Gammon, P. M., Lodzinski, M., Covington, James A. and Mawby, P. A. (2008) Si/SiC heterojunctions fabricated by direct wafer bonding. Electrochemical and Solid State Letters, Vol.11 (No.11). H306-H308. doi:10.1149/1.2976158 ISSN 1099-0062.

Pérez-Tomás, Amador, Jennings, M. R., Mawby, P. A. (Philip A.), Millan, J., Godignon, P., Montserrat, Josep, Rossinyol, E., Vennegues, P. and Stoemenos, J. (2008) Interfacial properties of thermally oxidized Ta2Si on Si. Surface and Interface Analysis, Volume 40 (Number 8). pp. 1164-1167. doi:10.1002/sia.2859 ISSN 0142-2421.

Bryant, Angus T., Mawby, P. A. (Philip A.), Palmer, Patrick R., Santi, Enrico and Hudgins, Jerry L. (2008) Exploration of power device reliability using compact device models and fast electrothermal simulation. In: 41st Annual Meeting of the IEEE Industry Applications Society, Tampa, FL, Oct 08-12, 2006. Published in: IEEE Transactions on Industry Applications, Vol.44 (No.3). pp. 894-903. doi:10.1109/TIA.2008.921388 ISSN 0093-9994.

Pérez-Tomás, Amador, Jennings, M. R., Gammon, P. M., Roberts, G. J., Mawby, P. A. (Philip A.), Millan, J., Godignon, P., Montserrat, J. and Mestres, N. (2008) SiC MOSFETs with thermally oxidized Ta2Si stacked on SiO2 as high-k gate insulator. Microelectronic Engineering, Volume 85 (Number 4). pp. 704-709. doi:10.1016/j.mee.2007.12.073 ISSN 0167-9317.

Ahmed, M. M. R. and Mawby, P. A. (Philip A.) (2008) Analysis of parallel CoolMOS under saturation-mode operation. In: 34th Annual Conference of the IEEE-Industrial-Electronics-Society, Orlando, FL, Nov 10-13, 2008. Published in: IEEE Industrial Electronics Society. Annual Conference. Proceedings, Vol.1-5 pp. 500-504. ISBN 978-1-4244-1767-4. doi:10.1109/IECON.2008.4758013 ISSN 1553-572X.

Swan, I. R. (Ian R.), Bryant, Angus T. and Mawby, P. A. (Philip A.) (2008) Fast thermal models for power device packaging. In: IEEE Industry-Applications-Society Annual Meeting, Alberta, Canada, Oct 05-09, 2008. Published in: Industry Applications Society. IEEE - IAS Annual Meeting. Conference Record, Vol.1-5 pp. 1457-1464. ISBN 978-1-4244-2278-4. doi:10.1109/08IAS.2008.359 ISSN 0197-2618.

Jennings, M. R., Pérez-Tomás, Amador, Gammon, P. M., Davis, M., Chow, T. P. and Mawby, P. A. (Philip A.) (2008) Layered metal and highly doped MBE Si contacts for 4H-SiC power devices. In: 9th International Seminar on Power Semiconductors (ISPS 2008) , Prague, Czech Republic, Aug 27-29, 2008. Published in: IET Digest, Vol.2008 (No.2). pp. 69-72. doi:10.1049/ic:20080185

Guy, Owen J., Lodzinski, Michal, Castaing, Ambroise, Igic, P. M., Pérez-Tomás, Amador, Jennings, M. R. and Mawby, P. A. (Philip A.) (2008) Silicon carbide Schottky diodes and MOSFETs: solutions to performance problems. In: 13th International Power Electronics and Motion Control Conference, Poznan, Poland, Sep 01-03, 2008. Published in: Proceedings of the 13th International Power Electronics and Motion Control Conference, Vol.1-5 pp. 2464-2471. doi:10.1109/EPEPEMC.2008.4635633

2007

Pérez-Tomás, Amador, Jennings, M. R., Davis, M., Shah, V. A., Grasby, T., Covington, James A. and Mawby, P. A. (2007) High doped MBE Si p-n and n-n heterojunction diodes on 4H-SiC. MICROELECTRONICS JOURNAL, 38 (12). pp. 1233-1237. doi:10.1016/j.mejo.2007.09.019 ISSN 0026-2692.

Pérez-Tomás, Amador, Jennings, M. R., Davis, M. C., Covington, James A., Mawby, P. A., Shah, V. A. and Grasby, T. (2007) Characterization and modeling of n-n Si/SiC heterojunction diodes. Journal of Applied Physics, Vol.102 (No.1). Article: 014505. doi:10.1063/1.2752148 ISSN 0021-8979.

Jennings, M. R., Pérez-Tomás, Amador, Davies, M., Walker, David, Zhu, L., Losee, P., Huang, W., Balachandran, S., Guy, O. J., Covington, James A., Chow, T. P. and Mawby, P. A. (2007) Analysis of Al/Ti, Al/Ni multiple and triple layer contacts to p-type 4H-SiC. Solid-State Electronics, Vol.51 (No.5). pp. 797-801. doi:10.1016/j.sse.2007.02.037 ISSN 0038-1101.

Jennings, M. R., Pérez-Tomás, Amador, Walker, D., Zhu, L., Losee, P., Huang, W., Balachandran, S., Guy, O. J., Covington, James A., Chow, T. P. and Mawby, P. A. (2007) Development of low resistance Al/Ti stacked metal contacts to p-type 4H-SiC. In: 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, Sep 2006. Published in: Silicon Carbide and Related Materials 2006 : ECSCRM 2006 , 556-557 pp. 697-700. ISBN 9780878494422. ISSN 0255-5476.

Roberts, G. J., Bryant, A. T., Mawby, P. A. (Philip A.), Ueta, T., Nisijima, T. and Hamada, K. (2007) Evaluation of silicon carbide devices for hybrid vehicle drives. In: 2007 European Conference on Power Electronics and Applications, Aalborg, Denmark, 2-5 Sep 2007. Published in: EPE 2007: 12th European Conference on Power Electronics and Applications pp. 2662-2671. ISBN 9789075815115. doi:10.1109/EPE.2007.4417371

Bryant, A. T., Roberts, G. J., Walker, A. and Mawby, P. A. (Philip A.) (2007) Fast inverter loss simulation and silicon carbide device evaluation for hybrid electric vehicle drives. In: 4th Power Conversion Conference (PCC-Nagoya 2007), Nagoya, Japan, 2-5 Apr 2007. Published in: 2007 Power Conversion Conference - Nagoya, Vols 1-3 pp. 1017-1024. ISBN 9781424408436.

McGordon, Andrew, Bryant, Angus T., Jennings, P. A. (Paul A.) and Mawby, P. A. (Philip A.) (2007) Inverter temperature rise predictions in a heavy duty vehicle for a range of hybrid electric vehicle architectures. In: 23rd International Electric Vehicle Symposium and Exposition, Anaheim, California, 02-05 Dec 2007. Published in: Proceedings of the 23rd International Battery, Hybrid and Fuel Cell Electric Vehicle Symposium EVS-23 ISBN 9781605607931.

Mawby, P. A., Pérez-Tomás, Amador, Jennings, M. R., Davis, M., Covington, James A., Shah, V. A. and Grasby, T. (2007) Molecular beam epitaxy Si/4H-SiC heterojunction diodes. In: 14th International Workshop on the Physics of Semiconductor Devices, Indian Inst Technol, Mumbai, India, 16-20 Dec 2007. Published in: International Workshop on Physics of Semiconductor Devices, 2007. IWPSD 2007 pp. 775-780. ISBN 9781424417278. doi:10.1109/IWPSD.2007.4472633

Pérez-Tomás, Amador, Jennings, M. R., Mawby, P. A., Covington, James A., Godignon, P., Millan, J. and Mestres, N. (2007) SiC MOSFET channel mobility dependence on substrate doping and temperature considering high density of interface traps. In: 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, 3-7 Sep 2006. Published in: Silicon Carbide and Related Materials 2006 : ECSCRM 2006 , Volume 556-557 pp. 835-838. ISSN 0255-5476.

2006

Pérez-Tomás, Amador, Brosselard, P., Godignon, P., Millan, J., Mestres, N., Jennings, M. R., Covington, James A. and Mawby, P. A. (2006) Field-effect mobility temperature modeling of 4H-SiC metal-oxide-semiconductor transistors. JOURNAL OF APPLIED PHYSICS, 100 (11). doi:10.1063/1.2395597 ISSN 0021-8979.

Forsyth, A. J., Yang, S. Y., Mawby, P. A. (Philip A.) and Igic, P. (2006) Measurement and modelling of power electronic devices at cryogenic temperatures. IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS, 153 (5). pp. 407-415. doi:10.1049/ip-cds:20050359 ISSN 1350-2409.

Mawby, P. A. (Philip A.), Bryant, A. T., Palmer, P. R., Santi, E. and Hudgins, J. L. (2006) High speed electro-thermal models for inverter simulations. In: 25th International Conference on Microelectronics, Belgrade, SERBIA MONTENEG, MAY 14-17, 2006. Published in: 2006 25TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS, VOLS 1 AND 2, PROCEEDINGS pp. 175-182. ISBN 1-4244-0116-X. doi:10.1109/ICMEL.2006.1650922