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Jump to: Advantage West Midlands (AWM) | Advantage West Midlands (AWM) | Birmingham Science City | Department of Trade and Industry (UK) | Engineering and Physical Sciences Research Council (EPSRC) | European Commission (EC) | European Regional Development Fund (ERDF) | Great Britain. Department of Trade and Industry (DTI) | Great Britain. Dept. of Trade and Industry (DTI) | Innovate UK | Royal Academy of Engineering (Great Britain) | Spain. Ministerio de Ciencia e Innovación (MCINN) | Spain. Ministerio de Economía y Competitividad [Ministry of Economy and Competitiveness] (MINECO) | Spanish MICyN
Number of items: 26.
Advantage West Midlands (AWM)
Fisher, Craig A., Jennings, M. R., Sharma, Yogesh K., Hamilton, Dean P., Li, Fan, Gammon, P. M., Pérez-Tomás, Amador, Thomas, Stephen M., Burrows, S. E. (Susan E.) and Mawby, P. A. (Philip A.) (2014) On the application of novel high temperature oxidation processes to enhance the performance of high voltage silicon carbide PiN diodes. In: 2014 16th European Conference on Power Electronics and Applications (EPE'14-ECCE Europe), , Finland, 26-28 Aug 2014. Published in: 2014 16th European Conference on Power Electronics and Applications (EPE'14-ECCE Europe), pp. 1-9. doi:10.1109/EPE.2014.6910738
Alatise, Olayiwola M., Parker-Allotey, Nii-Adotei, Jennings, M. R., Mawby, P. A. (Philip A.), Kennedy, Ian and Petkos, George (2011) Modeling the impact of the trench depth on the gate-drain capacitance in power MOSFETs. IEEE Electron Device Letters, Vol.32 (No.9). pp. 1269-1271. doi:10.1109/LED.2011.2159476 ISSN 0741-3106.
Alatise, Olayiwola M., Parker-Allotey, Nii-Adotei, Jennings, M. R., Mawby, P. A. (Philip A.), Kennedy, Ian and Petkos, George (2011) Trench depth optimization for energy efficient discrete power trench MOSFETs. In: The 41st European Solid State Device Research Conference (ESSDERC), Finlandia Hall, Helsinki, Finland, Sep 12-16, 2011. Published in: Solid-State Device Research Conference (ESSDERC), 2011 Proceedings of the European pp. 291-294. doi:10.1109/ESSDERC.2011.6044177 ISSN 1930-8876.
Advantage West Midlands (AWM)
Parker-Allotey, Nii-Adotei, Alatise, Olayiwola M., Hamilton, Dean P., Jennings, M. R., Mawby, P. A. (Philip A.), Nash, Robert Alastair and Magill, Rob (2011) Conduction and switching loss comparison between an IGBT/Si-PiN diode pair and an IGBT/SiC-Schottky diode pair. In: IEEE Innovative Smart Grid Technologies Conference (ISGT) , Manchester Central Convention Complex, Manchester, United Kingdom, Dec 5-7, 2011. Published in: Innovative Smart Grid Technologies (ISGT Europe), 2011 2nd IEEE PES International Conference and Exhibition on pp. 1-6. doi:10.1109/ISGTEurope.2011.6162688 ISSN 2165-4816.
Birmingham Science City
Fisher, Craig A., Jennings, M. R., Sharma, Yogesh K., Hamilton, Dean P., Li, Fan, Gammon, P. M., Pérez-Tomás, Amador, Thomas, Stephen M., Burrows, S. E. (Susan E.) and Mawby, P. A. (Philip A.) (2014) On the application of novel high temperature oxidation processes to enhance the performance of high voltage silicon carbide PiN diodes. In: 2014 16th European Conference on Power Electronics and Applications (EPE'14-ECCE Europe), , Finland, 26-28 Aug 2014. Published in: 2014 16th European Conference on Power Electronics and Applications (EPE'14-ECCE Europe), pp. 1-9. doi:10.1109/EPE.2014.6910738
Alatise, Olayiwola M., Parker-Allotey, Nii-Adotei, Jennings, M. R., Mawby, P. A. (Philip A.), Kennedy, Ian and Petkos, George (2011) Modeling the impact of the trench depth on the gate-drain capacitance in power MOSFETs. IEEE Electron Device Letters, Vol.32 (No.9). pp. 1269-1271. doi:10.1109/LED.2011.2159476 ISSN 0741-3106.
Department of Trade and Industry (UK)
Guy, Owen J., Lodzinski, Michal, Castaing, Ambroise, Igic, P. M., Pérez-Tomás, Amador, Jennings, M. R. and Mawby, P. A. (Philip A.) (2008) Silicon carbide Schottky diodes and MOSFETs: solutions to performance problems. In: 13th International Power Electronics and Motion Control Conference, Poznan, Poland, Sep 01-03, 2008. Published in: Proceedings of the 13th International Power Electronics and Motion Control Conference, Vol.1-5 pp. 2464-2471. doi:10.1109/EPEPEMC.2008.4635633
Engineering and Physical Sciences Research Council (EPSRC)
Li, Fan, Sharma, Yogesh K., Shah, V. A., Jennings, M. R., Pérez-Tomás, Amador, Myronov, Maksym, Fisher, Craig A., Leadley, D. R. (David R.) and Mawby, P. A. (Philip A.) (2015) Electrical activation of nitrogen heavily implanted 3C-SiC(100). Applied surface science, 353 . pp. 958-963. doi:10.1016/j.apsusc.2015.06.169 ISSN 0169-4332.
Fisher, Craig A., Jennings, M. R., Sharma, Yogesh K., Hamilton, Dean P., Li, Fan, Gammon, P. M., Pérez-Tomás, Amador, Thomas, Stephen M., Burrows, S. E. (Susan E.) and Mawby, P. A. (Philip A.) (2014) On the application of novel high temperature oxidation processes to enhance the performance of high voltage silicon carbide PiN diodes. In: 2014 16th European Conference on Power Electronics and Applications (EPE'14-ECCE Europe), , Finland, 26-28 Aug 2014. Published in: 2014 16th European Conference on Power Electronics and Applications (EPE'14-ECCE Europe), pp. 1-9. doi:10.1109/EPE.2014.6910738
Gammon, P. M., Pérez-Tomás, Amador, Shah, V. A., Vavasour, O., Donchev, E., Pang, J. S., Myronov, Maksym, Fisher, Craig A., Jennings, M. R., Leadley, D. R. (David R.) and Mawby, P. A. (Philip A.) (2013) Modelling the inhomogeneous SiC Schottky interface. Journal of Applied Physics, Volume 114 (Number 22). Article number 223704. doi:10.1063/1.4842096 ISSN 0021-8979.
Gammon, P. M., Donchev, E., Pérez-Tomás, Amador, Shah, V. A., Pang, J. S., Petrov, P. K. (Peter K.), Jennings, M. R., Fisher, Craig A., Mawby, P. A. (Philip A.), Leadley, D. R. (David R.) and Alford, Neil McN. (2012) A study of temperature-related non-linearity at the metal-silicon interface. Journal of Applied Physics, Vol.112 . 114513 . doi:http://dx.doi.org/10.1063/1.4768718 ISSN 0021-8979.
European Commission (EC)
Gammon, P. M., Pérez-Tomás, Amador, Shah, V. A., Vavasour, O., Donchev, E., Pang, J. S., Myronov, Maksym, Fisher, Craig A., Jennings, M. R., Leadley, D. R. (David R.) and Mawby, P. A. (Philip A.) (2013) Modelling the inhomogeneous SiC Schottky interface. Journal of Applied Physics, Volume 114 (Number 22). Article number 223704. doi:10.1063/1.4842096 ISSN 0021-8979.
European Regional Development Fund (ERDF)
Fisher, Craig A., Jennings, M. R., Sharma, Yogesh K., Hamilton, Dean P., Li, Fan, Gammon, P. M., Pérez-Tomás, Amador, Thomas, Stephen M., Burrows, S. E. (Susan E.) and Mawby, P. A. (Philip A.) (2014) On the application of novel high temperature oxidation processes to enhance the performance of high voltage silicon carbide PiN diodes. In: 2014 16th European Conference on Power Electronics and Applications (EPE'14-ECCE Europe), , Finland, 26-28 Aug 2014. Published in: 2014 16th European Conference on Power Electronics and Applications (EPE'14-ECCE Europe), pp. 1-9. doi:10.1109/EPE.2014.6910738
Parker-Allotey, Nii-Adotei, Alatise, Olayiwola M., Hamilton, Dean P., Jennings, M. R., Mawby, P. A. (Philip A.), Nash, Robert Alastair and Magill, Rob (2011) Conduction and switching loss comparison between an IGBT/Si-PiN diode pair and an IGBT/SiC-Schottky diode pair. In: IEEE Innovative Smart Grid Technologies Conference (ISGT) , Manchester Central Convention Complex, Manchester, United Kingdom, Dec 5-7, 2011. Published in: Innovative Smart Grid Technologies (ISGT Europe), 2011 2nd IEEE PES International Conference and Exhibition on pp. 1-6. doi:10.1109/ISGTEurope.2011.6162688 ISSN 2165-4816.
Great Britain. Department of Trade and Industry (DTI)
Pérez-Tomás, Amador, Jennings, M. R., Mawby, P. A. (Philip A.), Millan, J., Godignon, P., Montserrat, Josep, Rossinyol, E., Vennegues, P. and Stoemenos, J. (2008) Interfacial properties of thermally oxidized Ta2Si on Si. Surface and Interface Analysis, Volume 40 (Number 8). pp. 1164-1167. doi:10.1002/sia.2859 ISSN 0142-2421.
Great Britain. Dept. of Trade and Industry (DTI)
Gammon, P. M., Pérez-Tomás, Amador, Jennings, M. R., Guy, O. J., Rimmer, N., Llobet, J., Mestres, N., Godignon, P., Placidi, M., Zabala, M., Covington, James A. and Mawby, P. A. (2010) Integration of HfO2 on Si/SiC heterojunctions for the gate architecture of SiC power devices. Applied Physics Letters, Vol.97 (No.1). 013506. doi:10.1063/1.3462932 ISSN 0003-6951.
Pérez-Tomás, Amador, Lodzinski, M., Guy, O. J., Jennings, M. R., Placidi, M., Llobet, J., Gammon, P. M., Davis, M. C., Covington, James A., Burrows, S. E. and Mawby, P. A. (2009) Si/SiC bonded wafer: a route to carbon free SiO2 on SiC. Applied Physics Letters, Vol.94 (No.10). Article: 103510. doi:10.1063/1.3099018 ISSN 0003-6951.
Jennings, M. R., Pérez-Tomás, Amador, Guy, O. J., Hammond, Richard, Burrows, S. E., Gammon, P. M., Lodzinski, M., Covington, James A. and Mawby, P. A. (2008) Si/SiC heterojunctions fabricated by direct wafer bonding. Electrochemical and Solid State Letters, Vol.11 (No.11). H306-H308. doi:10.1149/1.2976158 ISSN 1099-0062.
Pérez-Tomás, Amador, Jennings, M. R., Gammon, P. M., Roberts, G. J., Mawby, P. A. (Philip A.), Millan, J., Godignon, P., Montserrat, J. and Mestres, N. (2008) SiC MOSFETs with thermally oxidized Ta2Si stacked on SiO2 as high-k gate insulator. Microelectronic Engineering, Volume 85 (Number 4). pp. 704-709. doi:10.1016/j.mee.2007.12.073 ISSN 0167-9317.
Innovate UK
Russell, Stephen, Jennings, M. R. (Michael R.), Dai, Tianxiang, Li, Fan, Hamilton, Dean P., Fisher, Craig A., Sharma, Yogesh K., Mawby, P. A. (Philip A.) and Pérez-Tomás, Amador (2017) Functional oxide as an extreme high-k dielectric towards 4H-SiC MOSFET incorporation. Materials Science Forum, 897 . pp. 155-158. doi:10.4028/www.scientific.net/MSF.897.155 ISSN 1662-9752.
Royal Academy of Engineering (Great Britain)
Chan, Chun Wa, Gammon, P. M., Shah, V. A., Chen, Han, Jennings, M. R., Fisher, Craig A., Pérez-Tomás, Amador, Myronov, Maksym and Mawby, P. A. (Philip A.) (2015) Simulations of a lateral PiN diode on SiSiC substrate for high temperature applications. Materials Research Forum, 821 (7). pp. 624-627. doi:10.4028/www.scientific.net/MSF.821-823.624
Gammon, P. M., Pérez-Tomás, Amador, Shah, V. A., Vavasour, O., Donchev, E., Pang, J. S., Myronov, Maksym, Fisher, Craig A., Jennings, M. R., Leadley, D. R. (David R.) and Mawby, P. A. (Philip A.) (2013) Modelling the inhomogeneous SiC Schottky interface. Journal of Applied Physics, Volume 114 (Number 22). Article number 223704. doi:10.1063/1.4842096 ISSN 0021-8979.
Gammon, P. M., Donchev, E., Pérez-Tomás, Amador, Shah, V. A., Pang, J. S., Petrov, P. K. (Peter K.), Jennings, M. R., Fisher, Craig A., Mawby, P. A. (Philip A.), Leadley, D. R. (David R.) and Alford, Neil McN. (2012) A study of temperature-related non-linearity at the metal-silicon interface. Journal of Applied Physics, Vol.112 . 114513 . doi:http://dx.doi.org/10.1063/1.4768718 ISSN 0021-8979.
Spain. Ministerio de Ciencia e Innovación (MCINN)
Pérez-Tomás, Amador, Placidi, Marcel, Fontserè, A., Gammon, P. M. and Jennings, M. R. (2011) Temperature behavior and modeling of ohmic contacts to Si+ implanted n-type GaN. Microelectronics Reliability, Vol.51 (No.8). pp. 1325-1329. doi:10.1016/j.microrel.2011.03.023 ISSN 00262714.
Spain. Ministerio de Economía y Competitividad [Ministry of Economy and Competitiveness] (MINECO)
Pérez-Tomás, Amador, Catalàn, G., Fontserè, A., Iglesias, V., Chen, Han, Gammon, P. M., Jennings, M. R., Thomas, M., Fisher, Craig A., Sharma, Yogesh K., Placidi, M., Chmielowska, M., Chenot, S., Porti, M., Nafría, M. and Cordier, Y. (2015) Nanoscale conductive pattern of the homoepitaxial AlGaN/GaN transistor. Nanotechnology, 26 (11). pp. 1-10. 115203. ISSN 0957-4484.
Spanish MICyN
Fontserè, A., Pérez-Tomás, Amador, Placidi, M., Fernández-Martínez, P., Baron, N., Chenot, S., Cordier, Y., Moreno, J.C., Gammon, P. M. and Jennings, M. R. (2011) Temperature dependence of Al/Ti-based Ohmic contact to GaN devices : HEMT and MOSFET. Microelectronic Engineering, Vol.88 (No.10). pp. 3140-3144. doi:10.1016/j.mee.2011.06.015 ISSN 0167-9317.
This list was generated on Thu Apr 25 13:38:16 2024 BST.