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Number of items: 118.
AFOSR
Linhart, W. M., Veal, T. D. (Tim D.), King, P. D. C., Koblmueller, G., Gallinat, C. S., Speck, James S. and McConville, C. F. (Chris F.) (2010) Surface, bulk, and interface electronic properties of nonpolar InN. Applied Physics Letters, Vol.97 (No.11). Article: 112103. doi:10.1063/1.3488821 ISSN 0003-6951.
Advantage West Midlands (AWM)
Linhart, W. M., Veal, T. D. (Tim D.), King, P. D. C., Koblmueller, G., Gallinat, C. S., Speck, James S. and McConville, C. F. (Chris F.) (2010) Surface, bulk, and interface electronic properties of nonpolar InN. Applied Physics Letters, Vol.97 (No.11). Article: 112103. doi:10.1063/1.3488821 ISSN 0003-6951.
CNR-INFM
Zhang, K. H. L., Payne, D. J., Palgrave, R. G., Lazarov, V. K., Chen, W., Wee, A. T. S., McConville, C. F. (Chris F.), King, P. D. C., Veal, T. D. (Tim D.), Panaccione, G., Lacovig, P. and Egdell, R. G. (2009) Surface structure and electronic properties of In2O3(111) single-crystal thin films grown on Y-stabilized ZrO2(111). Chemistry of Materials, Vol.21 (No.19). pp. 4353-4355. doi:10.1021/cm901127r ISSN 0897-4756.
Carl-Zeiss-Stifung
Piper, L. F. J., Colakerol, Leyla, King, P. D. C., Schleife, A., Zuniga-Perez, J., Glans, Per-Anders, Learmonth, Tim, Federov, A., Veal, T. D. (Tim D.), Fuchs, F., Munoz-Sanjose, V., Bechstedt, F., McConville, C. F. (Chris F.) and Smith, Kevin E. (2008) Observation of quantized subband states and evidence for surface electron accumulation in CdO from angle-resolved photoemission spectroscopy. Physical Review B (Condensed Matter and Materials Physics), Vol.78 (No.16). Article No. 165127. doi:10.1103/PhysRevB.78.165127 ISSN 1098-0121.
DOE
Allen, M. W., Swartz, C. H., Myers, T. H., Veal, T. D. (Tim D.), McConville, C. F. (Chris F.) and Durbin, S. M. (2010) Bulk transport measurements in ZnO: the effect of surface electron layers. Physical Review B (Condensed Matter and Materials Physics), Vol.81 (No.7). Article: 075211. doi:10.1103/PhysRevB.81.075211 ISSN 1098-0121.
Danish National Research Council
King, P. D. C., Veal, T. D. (Tim D.), McConville, C. F. (Chris F.), Zuniga-Perez, J., Munoz-Sanjose, V., Hopkinson, M., Rienks, E. D. L., Jensen, M. Fuglsang and Hofmann, Ph. (2010) Surface band-gap narrowing in quantized electron accumulation layers. Physical Review Letters, Vol.104 (No.25). Article no. 256803. doi:10.1103/PhysRevLett.104.256803 ISSN 0031-9007.
Daresbury Laboratory
King, P. D. C., Veal, T. D. (Tim D.), Gallinat, C. S., Koblmueller, G., Bailey, L. R. (Laura R.), Speck, James S. and McConville, C. F. (Chris F.) (2008) Influence of growth conditions and polarity on interface-related electron density in InN. Journal of Applied Physics, Vol.104 (No.10). doi:10.1063/1.3020528 ISSN 0021-8979.
Department of Energy
Piper, L. F. J., Colakerol, Leyla, King, P. D. C., Schleife, A., Zuniga-Perez, J., Glans, Per-Anders, Learmonth, Tim, Federov, A., Veal, T. D. (Tim D.), Fuchs, F., Munoz-Sanjose, V., Bechstedt, F., McConville, C. F. (Chris F.) and Smith, Kevin E. (2008) Observation of quantized subband states and evidence for surface electron accumulation in CdO from angle-resolved photoemission spectroscopy. Physical Review B (Condensed Matter and Materials Physics), Vol.78 (No.16). Article No. 165127. doi:10.1103/PhysRevB.78.165127 ISSN 1098-0121.
Deutsche Forschungsgemeinschaft (DFG)
King, P. D. C., Veal, T. D. (Tim D.), Fuchs, F., Wang, Ch. Y., Payne, D. J., Bourlange, A., Zhang, H., Bell, Gavin R., Cimalla, V., Ambacher, O., Egdell, R. G., Bechstedt, Friedhelm and McConville, C. F. (Chris F.) (2009) Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedral In2O3. Physical Review B (Condensed Matter and Materials Physics), Vol.79 (No.20). pp. 205211-1. doi:10.1103/PhysRevB.79.205211 ISSN 1098-0121.
King, P. D. C., Veal, T. D. (Tim D.), Schleife, A., Zuniga-Perez, J., Martel, B., Jefferson, P. H., Fuchs, F., Munoz-Sanjose, V., Bechstedt, F. and McConville, C. F. (Chris F.) (2009) Valence-band electronic structure of CdO, ZnO, and MgO from x-ray photoemission spectroscopy and quasi-particle-corrected density-functional theory calculations. Physical Review B (Condensed Matter and Materials Physics), Vol.79 (No.20). Article no. 205205. doi:10.1103/PhysRevB.79.205205 ISSN 1098-0121.
Piper, L. F. J., Colakerol, Leyla, King, P. D. C., Schleife, A., Zuniga-Perez, J., Glans, Per-Anders, Learmonth, Tim, Federov, A., Veal, T. D. (Tim D.), Fuchs, F., Munoz-Sanjose, V., Bechstedt, F., McConville, C. F. (Chris F.) and Smith, Kevin E. (2008) Observation of quantized subband states and evidence for surface electron accumulation in CdO from angle-resolved photoemission spectroscopy. Physical Review B (Condensed Matter and Materials Physics), Vol.78 (No.16). Article No. 165127. doi:10.1103/PhysRevB.78.165127 ISSN 1098-0121.
King, P. D. C., Veal, T. D., Jefferson, P. H., Hatfield, S. A., Piper, L. F. J., McConville, C. F., Fuchs, F., Furthmueller, J., Bechstedt, Friedhelm, Lu, H. and Schaff, William Joseph (2008) Determination of the branch-point energy of InN : chemical trends in common-cation and common-anion semiconductors. Physical Review B (Condensed Matter and Materials Physics), Vol.77 (No.4). Article no. 045316 . doi:10.1103/PhysRevB.77.045316 ISSN 1098-0121.
King, Philip David, Veal, T. D., McConville, C. F., Fuchs, Frank, FurthmΓΌller, JΓΌrgen, Bechstedt, Friedhelm, Schley, P., Goldhahn, R., SchΓΆrmann, J., As, D. J., Lischka, K., Muto, D., Naoi, H., Nanishi, Y., Lu, H. and Schaff, William Joseph (2007) Universality of electron accumulation at wurtzite c- and a-plane and zinc-blende InN surfaces. Applied Physics Letters, Vol.91 (No.9). 092101. doi:10.1063/1.2775807 ISSN 0003-6951.
Director, Office of Science, Office of Basic Energy Sciences of the U. S. Department of Energy
Piper, L. F. J., Colakerol, Leyla, King, P. D. C., Schleife, A., Zuniga-Perez, J., Glans, Per-Anders, Learmonth, Tim, Federov, A., Veal, T. D. (Tim D.), Fuchs, F., Munoz-Sanjose, V., Bechstedt, F., McConville, C. F. (Chris F.) and Smith, Kevin E. (2008) Observation of quantized subband states and evidence for surface electron accumulation in CdO from angle-resolved photoemission spectroscopy. Physical Review B (Condensed Matter and Materials Physics), Vol.78 (No.16). Article No. 165127. doi:10.1103/PhysRevB.78.165127 ISSN 1098-0121.
Donors of the American Chemical Society Petroleum Research Fund
Piper, L. F. J., Colakerol, Leyla, King, P. D. C., Schleife, A., Zuniga-Perez, J., Glans, Per-Anders, Learmonth, Tim, Federov, A., Veal, T. D. (Tim D.), Fuchs, F., Munoz-Sanjose, V., Bechstedt, F., McConville, C. F. (Chris F.) and Smith, Kevin E. (2008) Observation of quantized subband states and evidence for surface electron accumulation in CdO from angle-resolved photoemission spectroscopy. Physical Review B (Condensed Matter and Materials Physics), Vol.78 (No.16). Article No. 165127. doi:10.1103/PhysRevB.78.165127 ISSN 1098-0121.
Engineering and Physical Sciences Research Council (EPSRC)
Segercrantz, N., Slotte, J., Makkonen, I., Tuomisto, F., Sandall, I. C., Ashwin, M. J. and Veal, T. D. (Tim D.) (2017) Hole density and acceptor-type defects in MBE-grown GaSb1-x Bi x. Journal of Physics D: Applied Physics, 50 (29). 295102. doi:10.1088/1361-6463/aa779a ISSN 0022-3727.
Rajpalke, Mohana K., Linhart, W. M., Yu, K. M., Jones, T. S. (Tim S.), Ashwin, M. J. and Veal, T. D. (Tim D.) (2015) Bi flux-dependent MBE growth of GaSbBi alloys. Journal of Crystal Growth, 425 . pp. 241-244. doi:10.1016/j.jcrysgro.2015.02.093 ISSN 0022-0248.
Rajpalke, Mohana K., Linhart, W. M., Yu, K. M., Birkett, Michael Alexander, Alaria, Jonathan, Bomphrey, John James, Sallis, S., Piper, L. F. J., Jones, T. S. (Tim S.), Ashwin, M. J. and Veal, T. D. (Tim D.) (2014) Bi-induced band gap reduction in epitaxial InSbBi alloys. Applied Physics Letters, Volume 105 (Number 21). Article number 212101. doi:10.1063/1.4902442 ISSN 0003-6951.
Vasheghani Farahani, Sepehr, Veal, T. D. (Tim D.), Mudd, James J., Scanlon, David O., Watson, G. W., Bierwagen, O., White, M. E., Speck, James S. and McConville, C. F. (Chris F.) (2014) Valence-band density of states and surface electron accumulation in epitaxial SnO2 films. Physical Review B (Condensed Matter and Materials Physics), Volume 90 (Number 15). Article number 155413 . doi:10.1103/PhysRevB.90.155413 ISSN 1098-0121.
Kopaczek, J., Rajpalke, Mohana K., Linhart, W. M., Jones, T. S. (Tim S.), Ashwin, M. J., Kudrawiec, R. and Veal, T. D. (Tim D.) (2014) Photoreflectance spectroscopy of GaInSbBi and AlGaSbBi quaternary alloys. Applied Physics Letters, Volume 105 (Number 11). Article number 112102. doi:10.1063/1.4895930 ISSN 0003-6951.
Rajpalke, Mohana K., Linhart, W. M., Birkett, Michael Alexander, Yu, K. M., Alaria, Jonathan, Kopaczek, Jan, Kudrawiec, Robert, Jones, T. S. (Tim S.), Ashwin, M. J. and Veal, T. D. (Tim D.) (2014) High Bi content GaSbBi alloys. Journal of Applied Physics, Volume 116 (Number 4). 043511. doi:10.1063/1.4891217 ISSN 0021-8979.
Zhuang, Qian D., Anyebe, Ezekiel A., SΓ‘nchez, Ana M., Rajpalke, Mohana K., Veal, T. D. (Tim D.), Zhukov, Alexander, Robinson, Benjamin J., Anderson, Frazer, Kolosov, Oleg and Falβko, Vladimir (2014) Graphitic platform for self-catalysed InAs nanowires growth by molecular beam epitaxy. Nanoscale Research Letters, Volume 9 (Number 1). Article number 321. doi:10.1186/1556-276X-9-321 ISSN 1556-276X.
Buckeridge, John, Scanlon, David O., Veal, T. D. (Tim D.), Ashwin, M. J., Walsh, Aron and Catlow, C. R. A. (2014) N incorporation and associated localized vibrational modes in GaSb. Physical Review B (Condensed Matter and Materials Physics), 89 (1). pp. 1-9. 014107 . doi:10.1103/PhysRevB.89.014107 ISSN 1098-0121.
Rajpalke, Mohana K., Linhart, W. M., Birkett, Michael Alexander, Yu, K. M., Scanlon, David O., Buckeridge, John, Jones, T. S. (Tim S.), Ashwin, M. J. and Veal, T. D. (Tim D.) (2013) Growth and properties of GaSbBi alloys. Applied Physics Letters, Volume 103 (Number 14). 142106. doi:10.1063/1.4824077 ISSN 0003-6951.
Vasheghani Farahani, Sepehr, Veal, T. D. (Tim D.), King, P. D. C., ZΓΊΓ±iga-PΓ©rez, J., MuΓ±oz-SanjosΓ©, V. and McConville, C. F. (Chris F.) (2011) Electron mobility in CdO films. Journal of Applied Physics, Vol.109 (No.7). 073712. doi:10.1063/1.3562141 ISSN 0021-8979.
King, P. D. C. and Veal, T. D. (Tim D.) (2011) Conductivity in transparent oxide semiconductors. Journal of Physics: Condensed Matter, Vol.23 (No.33). p. 334214. doi:10.1088/0953-8984/23/33/334214 ISSN 0953-8984.
Linhart, W. M., Veal, T. D. (Tim D.), King, P. D. C., Koblmueller, G., Gallinat, C. S., Speck, James S. and McConville, C. F. (Chris F.) (2010) Surface, bulk, and interface electronic properties of nonpolar InN. Applied Physics Letters, Vol.97 (No.11). Article: 112103. doi:10.1063/1.3488821 ISSN 0003-6951.
King, P. D. C., Veal, T. D. (Tim D.), McConville, C. F. (Chris F.), Zuniga-Perez, J., Munoz-Sanjose, V., Hopkinson, M., Rienks, E. D. L., Jensen, M. Fuglsang and Hofmann, Ph. (2010) Surface band-gap narrowing in quantized electron accumulation layers. Physical Review Letters, Vol.104 (No.25). Article no. 256803. doi:10.1103/PhysRevLett.104.256803 ISSN 0031-9007.
King, P. D. C., McKenzie, I. and Veal, T. D. (Tim D.) (2010) Observation of shallow-donor muonium in Ga2O3: evidence for hydrogen-induced conductivity. Applied Physics Letters, Vol.96 (No.6). Article: 062110. doi:10.1063/1.3309694 ISSN 0003-6951.
Allen, M. W., Swartz, C. H., Myers, T. H., Veal, T. D. (Tim D.), McConville, C. F. (Chris F.) and Durbin, S. M. (2010) Bulk transport measurements in ZnO: the effect of surface electron layers. Physical Review B (Condensed Matter and Materials Physics), Vol.81 (No.7). Article: 075211. doi:10.1103/PhysRevB.81.075211 ISSN 1098-0121.
Bailey, L. R. (Laura R.), Veal, T. D. (Tim D.), Kendrick, C. E., Durbin, S. M. and McConville, C. F. (Chris F.) (2009) Sulfur passivation of InN surface electron accumulation. Applied Physics Letters, Vol.95 (No.19). Article no. 192111. doi:10.1063/1.3263725 ISSN 0003-6951.
Zhang, K. H. L., Payne, D. J., Palgrave, R. G., Lazarov, V. K., Chen, W., Wee, A. T. S., McConville, C. F. (Chris F.), King, P. D. C., Veal, T. D. (Tim D.), Panaccione, G., Lacovig, P. and Egdell, R. G. (2009) Surface structure and electronic properties of In2O3(111) single-crystal thin films grown on Y-stabilized ZrO2(111). Chemistry of Materials, Vol.21 (No.19). pp. 4353-4355. doi:10.1021/cm901127r ISSN 0897-4756.
King, P. D. C., Lichti, R. L., Celebi, Y. G., Gil, J. M., Vilao, R. C., Alberto, H. V., Duarte, J. Piroto, Payne, D. J., Egdell, R. G., McKenzie, I., McConville, C. F. (Chris F.), Cox, S. F. J. and Veal, T. D. (Tim D.) (2009) Shallow donor state of hydrogen in In2O3 and SnO2: implications for conductivity in transparent conducting oxides. Physical Review B (Condensed Matter and Materials Physics), Vol.80 (No.8). Article no. 081201(R). doi:10.1103/PhysRevB.80.081201 ISSN 1098-0121.
Bourlange, A., Payne, D. J., Palgrave, R. G., Zhang, H., Foord, J. S., Egdell, R. G., Jacobs, R. M. J., Veal, T. D. (Tim D.), King, Philip David and McConville, C. F. (Chris F.) (2009) The influence of Sn doping on the growth of In2O3 on Y-stabilized ZrO2(100) by oxygen plasma assisted molecular beam epitaxy. Journal of Applied Physics, Vol.106 (No.1). Article no. 013703. doi:10.1063/1.3153966 ISSN 0021-8979.
King, P. D. C., Veal, T. D. (Tim D.), Schaff, W. J. and McConville, C. F. (Chris F.) (2009) Surface electronic properties of Mg-doped InAlN alloys. Physica Status Solidi. B: Basic Solid State Physics, Vol.246 (No.6). pp. 1169-1172. doi:10.1002/pssb.200880766 ISSN 0370-1972.
King, P. D. C., Veal, T. D. (Tim D.), Fuchs, F., Wang, Ch. Y., Payne, D. J., Bourlange, A., Zhang, H., Bell, Gavin R., Cimalla, V., Ambacher, O., Egdell, R. G., Bechstedt, Friedhelm and McConville, C. F. (Chris F.) (2009) Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedral In2O3. Physical Review B (Condensed Matter and Materials Physics), Vol.79 (No.20). pp. 205211-1. doi:10.1103/PhysRevB.79.205211 ISSN 1098-0121.
King, P. D. C., Veal, T. D. (Tim D.), Schleife, A., Zuniga-Perez, J., Martel, B., Jefferson, P. H., Fuchs, F., Munoz-Sanjose, V., Bechstedt, F. and McConville, C. F. (Chris F.) (2009) Valence-band electronic structure of CdO, ZnO, and MgO from x-ray photoemission spectroscopy and quasi-particle-corrected density-functional theory calculations. Physical Review B (Condensed Matter and Materials Physics), Vol.79 (No.20). Article no. 205205. doi:10.1103/PhysRevB.79.205205 ISSN 1098-0121.
King, P. D. C., Veal, T. D. (Tim D.) and McConville, C. F. (Chris F.) (2009) Unintentional conductivity of indium nitride: transport modelling and microscopic origins. Journal of Physics: Condensed Matter, Vol.21 (No.17). Article no. 174201. doi:10.1088/0953-8984/21/17/174201 ISSN 0953-8984.
King, P. D. C., Veal, T. D. (Tim D.), Jefferson, P. H., Zuniga-Perez, J., Munoz-Sanjose, V. and McConville, C. F. (Chris F.) (2009) Unification of the electrical behavior of defects, impurities, and surface states in semiconductors: Virtual gap states in CdO. Physical Review B (Condensed Matter and Materials Physics), Vol.79 (No.3). Article: 035203. doi:10.1103/PhysRevB.79.035203 ISSN 1098-0121.
Bailey, L. R. (Laura R.), Veal, T. D. (Tim D.), King, P. D. C., McConville, C. F. (Chris F.), Pereiro, J., Grandal, J., Sanchez-Garcia, M. A., Munoz, E. and Calleja, E. (2008) Band bending at the surfaces of In-rich InGaN alloys. Journal of Applied Physics, Vol.104 (No.11). doi:10.1063/1.3033373 ISSN 0021-8979.
Veal, T. D. (Tim D.), King, Philip David, Hatfield, S. A., Bailey, L. R. (Laura R.), McConville, C. F. (Chris F.), Martel, B., Moreno, J. C., Frayssinet, E., Semond, F. and ZΓΊΓ±iga-PΓ©rez, J. (2008) Valence band offset of the ZnO/AlN heterojunction determined by X-ray photoemission spectroscopy. Applied Physics Letters, Vol.93 (No.20). p. 202108. doi:10.1063/1.3032911 ISSN 0003-6951.
King, P. D. C., Veal, T. D. (Tim D.), Gallinat, C. S., Koblmueller, G., Bailey, L. R. (Laura R.), Speck, James S. and McConville, C. F. (Chris F.) (2008) Influence of growth conditions and polarity on interface-related electron density in InN. Journal of Applied Physics, Vol.104 (No.10). doi:10.1063/1.3020528 ISSN 0021-8979.
Piper, L. F. J., Colakerol, Leyla, King, P. D. C., Schleife, A., Zuniga-Perez, J., Glans, Per-Anders, Learmonth, Tim, Federov, A., Veal, T. D. (Tim D.), Fuchs, F., Munoz-Sanjose, V., Bechstedt, F., McConville, C. F. (Chris F.) and Smith, Kevin E. (2008) Observation of quantized subband states and evidence for surface electron accumulation in CdO from angle-resolved photoemission spectroscopy. Physical Review B (Condensed Matter and Materials Physics), Vol.78 (No.16). Article No. 165127. doi:10.1103/PhysRevB.78.165127 ISSN 1098-0121.
King, P. D. C., Veal, T. D. (Tim D.), Payne, D. J., Bourlange, A., Egdell, R. G. and McConville, C. F. (Chris F.) (2008) Surface electron accumulation and the charge neutrality level in In2O3. Physical Review Letters, Vol.101 (No.11). Article no. 116808. doi:10.1103/PhysRevLett.101.116808 ISSN 0031-9007.
King, P. D. C., Veal, T. D. (Tim D.), Kendrick, C. E., Bailey, L. R. (Laura R.), Durbin, Steven M. and McConville, C. F. (Chris F.) (2008) InN/GaN valence band offset : high-resolution x-ray photoemission spectroscopy measurements. Physical Review B (Condensed Matter and Materials Physics), Volume 78 (Number 3). Article number 033308. doi:10.1103/PhysRevB.78.033308 ISSN 1098-0121.
King, Philip David, Veal, T. D., Adikimenakis, A., Lu, H., Bailey, L. R., Iliopoulos, E., Georgakilas, A., Schaff, William Joseph and McConville, C. F. (2008) Surface electronic properties of undoped InAlN alloys. Applied Physics Letters, Vol.92 (No.17). p. 172105. doi:10.1063/1.2913765 ISSN 0003-6951.
King, P. D. C., Veal, T. D., Lu, H., Jefferson, Paul Harvey, Hatfield, S. A., Schaff, William Joseph and McConville, C. F. (2008) Surface electronic properties of n- and p-type InGaN alloys. Physica Status Solidi. B: Basic Research, Vol.245 (No.5). pp. 881-883. doi:10.1002/pssb.200778452 ISSN 0370-1972.
King, P. D. C., Veal, T. D., Lu, Hai, Hatfield, S. A., Schaff, William Joseph and McConville, C. F. (2008) The influence of conduction band plasmons on core-level photoemission spectra of InN. Surface Science, Volume 602 (Number 4). pp. 871-875. doi:10.1016/j.susc.2007.12.026 ISSN 0039-6028.
Jefferson, Paul Harvey, Hatfield, S. A., Veal, T. D. (Tim D.), King, Philip David, McConville, C. F. (Chris F.), ZΓΊΓ±iga-PΓ©rez, J. and MuΓ±oz-SanjosΓ©, V. (2008) Bandgap and effective mass of epitaxial cadmium oxide. Applied Physics Letters, Vol.92 (No.2). 022101. doi:10.1063/1.2833269 ISSN 0003-6951.
King, P. D. C., Veal, T. D., Jefferson, P. H., Hatfield, S. A., Piper, L. F. J., McConville, C. F., Fuchs, F., Furthmueller, J., Bechstedt, Friedhelm, Lu, H. and Schaff, William Joseph (2008) Determination of the branch-point energy of InN : chemical trends in common-cation and common-anion semiconductors. Physical Review B (Condensed Matter and Materials Physics), Vol.77 (No.4). Article no. 045316 . doi:10.1103/PhysRevB.77.045316 ISSN 1098-0121.
King, Philip David, Veal, T. D. (Tim D.), Hatfield, S. A., Jefferson, Paul Harvey, McConville, C. F. (Chris F.), Kendrick, C. E., Swartz, C. H. and Durbin, Steven M. (2007) X-ray photoemission spectroscopy determination of the InN/yttria stabilized cubic-zirconia valence band offset. Applied Physics Letters, Vol.91 (No.11). p. 112103. doi:10.1063/1.2783214 ISSN 0003-6951.
King, Philip David, Veal, T. D., McConville, C. F., Fuchs, Frank, FurthmΓΌller, JΓΌrgen, Bechstedt, Friedhelm, Schley, P., Goldhahn, R., SchΓΆrmann, J., As, D. J., Lischka, K., Muto, D., Naoi, H., Nanishi, Y., Lu, H. and Schaff, William Joseph (2007) Universality of electron accumulation at wurtzite c- and a-plane and zinc-blende InN surfaces. Applied Physics Letters, Vol.91 (No.9). 092101. doi:10.1063/1.2775807 ISSN 0003-6951.
King, Philip David, Veal, T. D., Jefferson, Paul Harvey, McConville, C. F., Wang, Tao, Parbrook, P. J., Lu, H. and Schaff, William Joseph (2007) Valence band offset of InN/AlN heterojunctions measured by X-ray photoelectron spectroscopy. Applied Physics Letters, Vol.90 (No.13). p. 132105. doi:10.1063/1.2716994 ISSN 0003-6951.
Veal, T. D., Jefferson, Paul Harvey, Piper, L. F. J., McConville, C. F., Joyce, T. B., Chalker, P. R., Considine, L., Lu, H. and Schaff, William Joseph (2006) Transition from electron accumulation to depletion at InGaN surfaces. Applied Physics Letters, Vol.89 (No.20). p. 202110. doi:10.1063/1.2387976 ISSN 0003-6951.
Jefferson, Paul Harvey, Veal, T. D. (Tim D.), Piper, L. F. J., Bennett, B. R., McConville, C. F. (Chris F.), Murdin, B. N., Buckle, L., Smith, G. W. and Ashley, T. (2006) Band anticrossing in GaNxSb1βx. Applied Physics Letters, Vol.89 (No.11). p. 111921. doi:10.1063/1.2349832 ISSN Band anticrossing in GaNxSb1βx.
Veal, T. D. (Tim D.), Piper, L. F. J., Jefferson, Paul Harvey, Mahboob, I., McConville, C. F. (Chris F.), Merrick, M., Hosea, T. J. C., Murdin, B. N. and Hopkinson, M. (2005) Photoluminescence spectroscopy of bandgap reduction in dilute InNAs alloys. Applied Physics Letters, Vol.87 (No.18). p. 182114. doi:10.1063/1.2126117 ISSN 0003-6951.
Veal, T. D. (Tim D.), Piper, L. F. J., Jollands, Stuart, Bennett, B. R., Jefferson, Paul Harvey, Thomas, Pam A., McConville, C. F. (Chris F.), Murdin, B. N., Buckle, L., Smith, G. W. and Ashley, T. (2005) Band gap reduction in GaNSb alloys due to the anion mismatch. Applied Physics Letters, Vol.87 (No.13). p. 132101. doi:10.1063/1.2058224 ISSN 0003-6951.
Mahboob, I., Veal, T. D. (Tim D.) and McConville, C. F. (Chris F.) (2003) Electron dynamics in InNxSb1βx. Applied Physics Letters, Vol.83 (No.11). pp. 2169-2171. doi:10.1063/1.1611270 ISSN 0003-6951.
Veal, T. D. (Tim D.), Mahboob, I., McConville, C. F. (Chris F.), Burke, T. M. and Ashley, T. (2003) Effect of hydrogen in dilute InNxSb1βx alloys grown by molecular beam epitaxy. Applied Physics Letters, Vol.83 (No.9). pp. 1776-1778. doi:10.1063/1.1604463 ISSN 0003-6951.
Veal, T. D. (Tim D.) and McConville, C. F. (Chris F.) (2000) Controlled oxide removal for the preparation of damage-free InAs(110) surfaces. Applied Physics Letters, Vol.77 (No.11). pp. 1665-1667. doi:10.1063/1.1310211 ISSN 0003-6951.
European Commission
Linhart, W. M., Veal, T. D. (Tim D.), King, P. D. C., Koblmueller, G., Gallinat, C. S., Speck, James S. and McConville, C. F. (Chris F.) (2010) Surface, bulk, and interface electronic properties of nonpolar InN. Applied Physics Letters, Vol.97 (No.11). Article: 112103. doi:10.1063/1.3488821 ISSN 0003-6951.
European Community
Piper, L. F. J., Colakerol, Leyla, King, P. D. C., Schleife, A., Zuniga-Perez, J., Glans, Per-Anders, Learmonth, Tim, Federov, A., Veal, T. D. (Tim D.), Fuchs, F., Munoz-Sanjose, V., Bechstedt, F., McConville, C. F. (Chris F.) and Smith, Kevin E. (2008) Observation of quantized subband states and evidence for surface electron accumulation in CdO from angle-resolved photoemission spectroscopy. Physical Review B (Condensed Matter and Materials Physics), Vol.78 (No.16). Article No. 165127. doi:10.1103/PhysRevB.78.165127 ISSN 1098-0121.
European Graphene Flagship Project
Zhuang, Qian D., Anyebe, Ezekiel A., SΓ‘nchez, Ana M., Rajpalke, Mohana K., Veal, T. D. (Tim D.), Zhukov, Alexander, Robinson, Benjamin J., Anderson, Frazer, Kolosov, Oleg and Falβko, Vladimir (2014) Graphitic platform for self-catalysed InAs nanowires growth by molecular beam epitaxy. Nanoscale Research Letters, Volume 9 (Number 1). Article number 321. doi:10.1186/1556-276X-9-321 ISSN 1556-276X.
European Regional Development Fund (ERDF)
Vasheghani Farahani, Sepehr, Veal, T. D. (Tim D.), Mudd, James J., Scanlon, David O., Watson, G. W., Bierwagen, O., White, M. E., Speck, James S. and McConville, C. F. (Chris F.) (2014) Valence-band density of states and surface electron accumulation in epitaxial SnO2 films. Physical Review B (Condensed Matter and Materials Physics), Volume 90 (Number 15). Article number 155413 . doi:10.1103/PhysRevB.90.155413 ISSN 1098-0121.
Linhart, W. M., Veal, T. D. (Tim D.), King, P. D. C., Koblmueller, G., Gallinat, C. S., Speck, James S. and McConville, C. F. (Chris F.) (2010) Surface, bulk, and interface electronic properties of nonpolar InN. Applied Physics Letters, Vol.97 (No.11). Article: 112103. doi:10.1063/1.3488821 ISSN 0003-6951.
France. Agence nationale de la recherche (ANR)
Veal, T. D. (Tim D.), King, Philip David, Hatfield, S. A., Bailey, L. R. (Laura R.), McConville, C. F. (Chris F.), Martel, B., Moreno, J. C., Frayssinet, E., Semond, F. and ZΓΊΓ±iga-PΓ©rez, J. (2008) Valence band offset of the ZnO/AlN heterojunction determined by X-ray photoemission spectroscopy. Applied Physics Letters, Vol.93 (No.20). p. 202108. doi:10.1063/1.3032911 ISSN 0003-6951.
Germany. Bundesministerium fΓΌr Bildung und Forschung (BMBF)
King, P. D. C., Veal, T. D. (Tim D.), Fuchs, F., Wang, Ch. Y., Payne, D. J., Bourlange, A., Zhang, H., Bell, Gavin R., Cimalla, V., Ambacher, O., Egdell, R. G., Bechstedt, Friedhelm and McConville, C. F. (Chris F.) (2009) Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedral In2O3. Physical Review B (Condensed Matter and Materials Physics), Vol.79 (No.20). pp. 205211-1. doi:10.1103/PhysRevB.79.205211 ISSN 1098-0121.
Great Britain. Ministry of Defence. Electro-Magnetic Remote Sensing Defence Technology Centre (EMRS DTC)
Buckle, L., Coomber, S. D., Ashley, Tim, Jefferson, Paul Harvey, Walker, David, Veal, T. D., McConville, C. F. and Thomas, Pam A. (2009) Growth and characterisation of dilute antimonide nitride materials for long-wavelength applications. Microelectronics Journal, Vol.40 (No.3 Sp. Iss. SI). pp. 399-402. doi:10.1016/j.mejo.2008.06.007 ISSN 0026-2692.
Lancaster Impact Acceleration Account
Zhuang, Qian D., Anyebe, Ezekiel A., SΓ‘nchez, Ana M., Rajpalke, Mohana K., Veal, T. D. (Tim D.), Zhukov, Alexander, Robinson, Benjamin J., Anderson, Frazer, Kolosov, Oleg and Falβko, Vladimir (2014) Graphitic platform for self-catalysed InAs nanowires growth by molecular beam epitaxy. Nanoscale Research Letters, Volume 9 (Number 1). Article number 321. doi:10.1186/1556-276X-9-321 ISSN 1556-276X.
Lundbeck foundation
King, P. D. C., Veal, T. D. (Tim D.), McConville, C. F. (Chris F.), Zuniga-Perez, J., Munoz-Sanjose, V., Hopkinson, M., Rienks, E. D. L., Jensen, M. Fuglsang and Hofmann, Ph. (2010) Surface band-gap narrowing in quantized electron accumulation layers. Physical Review Letters, Vol.104 (No.25). Article no. 256803. doi:10.1103/PhysRevLett.104.256803 ISSN 0031-9007.
MacDiarmid Institute for Advanced Materials and Nanotechnology (MIAMN)
King, Philip David, Veal, T. D. (Tim D.), Hatfield, S. A., Jefferson, Paul Harvey, McConville, C. F. (Chris F.), Kendrick, C. E., Swartz, C. H. and Durbin, Steven M. (2007) X-ray photoemission spectroscopy determination of the InN/yttria stabilized cubic-zirconia valence band offset. Applied Physics Letters, Vol.91 (No.11). p. 112103. doi:10.1063/1.2783214 ISSN 0003-6951.
Madrid (Spain : Region)
Bailey, L. R. (Laura R.), Veal, T. D. (Tim D.), King, P. D. C., McConville, C. F. (Chris F.), Pereiro, J., Grandal, J., Sanchez-Garcia, M. A., Munoz, E. and Calleja, E. (2008) Band bending at the surfaces of In-rich InGaN alloys. Journal of Applied Physics, Vol.104 (No.11). doi:10.1063/1.3033373 ISSN 0021-8979.
Marsden Fund
Allen, M. W., Zemlyanov, D. Y., Waterhouse, G. I. N., Metson, J. B., Veal, T. D. (Tim D.), McConville, C. F. (Chris F.) and Durbin, S. M. (2011) Polarity effects in the x-ray photoemission of ZnO and other wurtzite semiconductors. Applied Physics Letters, Vol.98 (No.10). p. 101906. doi:10.1063/1.3562308 ISSN 0003-6951.
Materials Design Network
Vasheghani Farahani, Sepehr, Veal, T. D. (Tim D.), Mudd, James J., Scanlon, David O., Watson, G. W., Bierwagen, O., White, M. E., Speck, James S. and McConville, C. F. (Chris F.) (2014) Valence-band density of states and surface electron accumulation in epitaxial SnO2 films. Physical Review B (Condensed Matter and Materials Physics), Volume 90 (Number 15). Article number 155413 . doi:10.1103/PhysRevB.90.155413 ISSN 1098-0121.
NCESS
King, P. D. C., Veal, T. D. (Tim D.), Schleife, A., Zuniga-Perez, J., Martel, B., Jefferson, P. H., Fuchs, F., Munoz-Sanjose, V., Bechstedt, F. and McConville, C. F. (Chris F.) (2009) Valence-band electronic structure of CdO, ZnO, and MgO from x-ray photoemission spectroscopy and quasi-particle-corrected density-functional theory calculations. Physical Review B (Condensed Matter and Materials Physics), Vol.79 (No.20). Article no. 205205. doi:10.1103/PhysRevB.79.205205 ISSN 1098-0121.
NCESS facility
King, P. D. C., Veal, T. D. (Tim D.), Schaff, W. J. and McConville, C. F. (Chris F.) (2009) Surface electronic properties of Mg-doped InAlN alloys. Physica Status Solidi. B: Basic Solid State Physics, Vol.246 (No.6). pp. 1169-1172. doi:10.1002/pssb.200880766 ISSN 0370-1972.
NSF Cooperative Agreement
Allen, M. W., Swartz, C. H., Myers, T. H., Veal, T. D. (Tim D.), McConville, C. F. (Chris F.) and Durbin, S. M. (2010) Bulk transport measurements in ZnO: the effect of surface electron layers. Physical Review B (Condensed Matter and Materials Physics), Vol.81 (No.7). Article: 075211. doi:10.1103/PhysRevB.81.075211 ISSN 1098-0121.
NSF MRSEC
Linhart, W. M., Veal, T. D. (Tim D.), King, P. D. C., Koblmueller, G., Gallinat, C. S., Speck, James S. and McConville, C. F. (Chris F.) (2010) Surface, bulk, and interface electronic properties of nonpolar InN. Applied Physics Letters, Vol.97 (No.11). Article: 112103. doi:10.1063/1.3488821 ISSN 0003-6951.
Narodowe Centrum Nauki (NCN)
Kopaczek, J., Rajpalke, Mohana K., Linhart, W. M., Jones, T. S. (Tim S.), Ashwin, M. J., Kudrawiec, R. and Veal, T. D. (Tim D.) (2014) Photoreflectance spectroscopy of GaInSbBi and AlGaSbBi quaternary alloys. Applied Physics Letters, Volume 105 (Number 11). Article number 112102. doi:10.1063/1.4895930 ISSN 0003-6951.
Rajpalke, Mohana K., Linhart, W. M., Birkett, Michael Alexander, Yu, K. M., Alaria, Jonathan, Kopaczek, Jan, Kudrawiec, Robert, Jones, T. S. (Tim S.), Ashwin, M. J. and Veal, T. D. (Tim D.) (2014) High Bi content GaSbBi alloys. Journal of Applied Physics, Volume 116 (Number 4). 043511. doi:10.1063/1.4891217 ISSN 0021-8979.
National Science Foundation (U.S.) (NSF)
King, P. D. C., Lichti, R. L., Celebi, Y. G., Gil, J. M., Vilao, R. C., Alberto, H. V., Duarte, J. Piroto, Payne, D. J., Egdell, R. G., McKenzie, I., McConville, C. F. (Chris F.), Cox, S. F. J. and Veal, T. D. (Tim D.) (2009) Shallow donor state of hydrogen in In2O3 and SnO2: implications for conductivity in transparent conducting oxides. Physical Review B (Condensed Matter and Materials Physics), Vol.80 (No.8). Article no. 081201(R). doi:10.1103/PhysRevB.80.081201 ISSN 1098-0121.
King, P. D. C., Veal, T. D. (Tim D.), Gallinat, C. S., Koblmueller, G., Bailey, L. R. (Laura R.), Speck, James S. and McConville, C. F. (Chris F.) (2008) Influence of growth conditions and polarity on interface-related electron density in InN. Journal of Applied Physics, Vol.104 (No.10). doi:10.1063/1.3020528 ISSN 0021-8979.
New Zealand. Ministry of Research, Science, and Technology (MORST)
King, Philip David, Veal, T. D. (Tim D.), Hatfield, S. A., Jefferson, Paul Harvey, McConville, C. F. (Chris F.), Kendrick, C. E., Swartz, C. H. and Durbin, Steven M. (2007) X-ray photoemission spectroscopy determination of the InN/yttria stabilized cubic-zirconia valence band offset. Applied Physics Letters, Vol.91 (No.11). p. 112103. doi:10.1063/1.2783214 ISSN 0003-6951.
Office of Naval Research
Allen, M. W., Swartz, C. H., Myers, T. H., Veal, T. D. (Tim D.), McConville, C. F. (Chris F.) and Durbin, S. M. (2010) Bulk transport measurements in ZnO: the effect of surface electron layers. Physical Review B (Condensed Matter and Materials Physics), Vol.81 (No.7). Article: 075211. doi:10.1103/PhysRevB.81.075211 ISSN 1098-0121.
Oxford Clarendon Fund
Zhang, K. H. L., Payne, D. J., Palgrave, R. G., Lazarov, V. K., Chen, W., Wee, A. T. S., McConville, C. F. (Chris F.), King, P. D. C., Veal, T. D. (Tim D.), Panaccione, G., Lacovig, P. and Egdell, R. G. (2009) Surface structure and electronic properties of In2O3(111) single-crystal thin films grown on Y-stabilized ZrO2(111). Chemistry of Materials, Vol.21 (No.19). pp. 4353-4355. doi:10.1021/cm901127r ISSN 0897-4756.
Physical Sciences Research Council, UK
King, P. D. C., Veal, T. D. (Tim D.), McConville, C. F. (Chris F.), King, P. J. C., Cox, S. F. J., Celebi, Y. G. and Lichti, R. L. (2009) The donor nature of muonium in undoped, heavily n-type and p-type InAs. Journal of Physics: Condensed Matter, Vol.21 (No.7). Article no. 075803. doi:10.1088/0953-8984/21/7/075803 ISSN 0953-8984.
R A Welch Foundation
King, P. D. C., Veal, T. D. (Tim D.), McConville, C. F. (Chris F.), King, P. J. C., Cox, S. F. J., Celebi, Y. G. and Lichti, R. L. (2009) The donor nature of muonium in undoped, heavily n-type and p-type InAs. Journal of Physics: Condensed Matter, Vol.21 (No.7). Article no. 075803. doi:10.1088/0953-8984/21/7/075803 ISSN 0953-8984.
R. A. Welch Foundation
King, P. D. C., Lichti, R. L., Celebi, Y. G., Gil, J. M., Vilao, R. C., Alberto, H. V., Duarte, J. Piroto, Payne, D. J., Egdell, R. G., McKenzie, I., McConville, C. F. (Chris F.), Cox, S. F. J. and Veal, T. D. (Tim D.) (2009) Shallow donor state of hydrogen in In2O3 and SnO2: implications for conductivity in transparent conducting oxides. Physical Review B (Condensed Matter and Materials Physics), Vol.80 (No.8). Article no. 081201(R). doi:10.1103/PhysRevB.80.081201 ISSN 1098-0121.
Science Foundation Ireland (SFI)
Vasheghani Farahani, Sepehr, Veal, T. D. (Tim D.), Mudd, James J., Scanlon, David O., Watson, G. W., Bierwagen, O., White, M. E., Speck, James S. and McConville, C. F. (Chris F.) (2014) Valence-band density of states and surface electron accumulation in epitaxial SnO2 films. Physical Review B (Condensed Matter and Materials Physics), Volume 90 (Number 15). Article number 155413 . doi:10.1103/PhysRevB.90.155413 ISSN 1098-0121.
Science and Technology Facilities Council (Great Britain) (STFC)
King, P. D. C., McKenzie, I. and Veal, T. D. (Tim D.) (2010) Observation of shallow-donor muonium in Ga2O3: evidence for hydrogen-induced conductivity. Applied Physics Letters, Vol.96 (No.6). Article: 062110. doi:10.1063/1.3309694 ISSN 0003-6951.
King, P. D. C., Lichti, R. L., Celebi, Y. G., Gil, J. M., Vilao, R. C., Alberto, H. V., Duarte, J. Piroto, Payne, D. J., Egdell, R. G., McKenzie, I., McConville, C. F. (Chris F.), Cox, S. F. J. and Veal, T. D. (Tim D.) (2009) Shallow donor state of hydrogen in In2O3 and SnO2: implications for conductivity in transparent conducting oxides. Physical Review B (Condensed Matter and Materials Physics), Vol.80 (No.8). Article no. 081201(R). doi:10.1103/PhysRevB.80.081201 ISSN 1098-0121.
Seventh Framework Programme (European Commission) (FP7)
Bailey, L. R. (Laura R.), Veal, T. D. (Tim D.), King, P. D. C., McConville, C. F. (Chris F.), Pereiro, J., Grandal, J., Sanchez-Garcia, M. A., Munoz, E. and Calleja, E. (2008) Band bending at the surfaces of In-rich InGaN alloys. Journal of Applied Physics, Vol.104 (No.11). doi:10.1063/1.3033373 ISSN 0021-8979.
Spanish Government
King, P. D. C., Veal, T. D. (Tim D.), Schleife, A., Zuniga-Perez, J., Martel, B., Jefferson, P. H., Fuchs, F., Munoz-Sanjose, V., Bechstedt, F. and McConville, C. F. (Chris F.) (2009) Valence-band electronic structure of CdO, ZnO, and MgO from x-ray photoemission spectroscopy and quasi-particle-corrected density-functional theory calculations. Physical Review B (Condensed Matter and Materials Physics), Vol.79 (No.20). Article no. 205205. doi:10.1103/PhysRevB.79.205205 ISSN 1098-0121.
King, P. D. C., Veal, T. D. (Tim D.), Jefferson, P. H., Zuniga-Perez, J., Munoz-Sanjose, V. and McConville, C. F. (Chris F.) (2009) Unification of the electrical behavior of defects, impurities, and surface states in semiconductors: Virtual gap states in CdO. Physical Review B (Condensed Matter and Materials Physics), Vol.79 (No.3). Article: 035203. doi:10.1103/PhysRevB.79.035203 ISSN 1098-0121.
Piper, L. F. J., Colakerol, Leyla, King, P. D. C., Schleife, A., Zuniga-Perez, J., Glans, Per-Anders, Learmonth, Tim, Federov, A., Veal, T. D. (Tim D.), Fuchs, F., Munoz-Sanjose, V., Bechstedt, F., McConville, C. F. (Chris F.) and Smith, Kevin E. (2008) Observation of quantized subband states and evidence for surface electron accumulation in CdO from angle-resolved photoemission spectroscopy. Physical Review B (Condensed Matter and Materials Physics), Vol.78 (No.16). Article No. 165127. doi:10.1103/PhysRevB.78.165127 ISSN 1098-0121.
Spanish Government
Vasheghani Farahani, Sepehr, Veal, T. D. (Tim D.), King, P. D. C., ZΓΊΓ±iga-PΓ©rez, J., MuΓ±oz-SanjosΓ©, V. and McConville, C. F. (Chris F.) (2011) Electron mobility in CdO films. Journal of Applied Physics, Vol.109 (No.7). 073712. doi:10.1063/1.3562141 ISSN 0021-8979.
Spanish government
King, P. D. C., Veal, T. D. (Tim D.), McConville, C. F. (Chris F.), Zuniga-Perez, J., Munoz-Sanjose, V., Hopkinson, M., Rienks, E. D. L., Jensen, M. Fuglsang and Hofmann, Ph. (2010) Surface band-gap narrowing in quantized electron accumulation layers. Physical Review Letters, Vol.104 (No.25). Article no. 256803. doi:10.1103/PhysRevLett.104.256803 ISSN 0031-9007.
State University of New York
Rajpalke, Mohana K., Linhart, W. M., Yu, K. M., Birkett, Michael Alexander, Alaria, Jonathan, Bomphrey, John James, Sallis, S., Piper, L. F. J., Jones, T. S. (Tim S.), Ashwin, M. J. and Veal, T. D. (Tim D.) (2014) Bi-induced band gap reduction in epitaxial InSbBi alloys. Applied Physics Letters, Volume 105 (Number 21). Article number 212101. doi:10.1063/1.4902442 ISSN 0003-6951.
State of Florida
Allen, M. W., Swartz, C. H., Myers, T. H., Veal, T. D. (Tim D.), McConville, C. F. (Chris F.) and Durbin, S. M. (2010) Bulk transport measurements in ZnO: the effect of surface electron layers. Physical Review B (Condensed Matter and Materials Physics), Vol.81 (No.7). Article: 075211. doi:10.1103/PhysRevB.81.075211 ISSN 1098-0121.
Suomen Akatemia [Academy of Finland]
Segercrantz, N., Slotte, J., Makkonen, I., Tuomisto, F., Sandall, I. C., Ashwin, M. J. and Veal, T. D. (Tim D.) (2017) Hole density and acceptor-type defects in MBE-grown GaSb1-x Bi x. Journal of Physics D: Applied Physics, 50 (29). 295102. doi:10.1088/1361-6463/aa779a ISSN 0022-3727.
UK Science and Technology Facilities Council
King, P. D. C., Veal, T. D. (Tim D.), McConville, C. F. (Chris F.), King, P. J. C., Cox, S. F. J., Celebi, Y. G. and Lichti, R. L. (2009) The donor nature of muonium in undoped, heavily n-type and p-type InAs. Journal of Physics: Condensed Matter, Vol.21 (No.7). Article no. 075803. doi:10.1088/0953-8984/21/7/075803 ISSN 0953-8984.
US National Science Foundation
King, P. D. C., Veal, T. D. (Tim D.), McConville, C. F. (Chris F.), King, P. J. C., Cox, S. F. J., Celebi, Y. G. and Lichti, R. L. (2009) The donor nature of muonium in undoped, heavily n-type and p-type InAs. Journal of Physics: Condensed Matter, Vol.21 (No.7). Article no. 075803. doi:10.1088/0953-8984/21/7/075803 ISSN 0953-8984.
United States. Air Force. Office of Scientific Research
King, P. D. C., Veal, T. D. (Tim D.), Gallinat, C. S., Koblmueller, G., Bailey, L. R. (Laura R.), Speck, James S. and McConville, C. F. (Chris F.) (2008) Influence of growth conditions and polarity on interface-related electron density in InN. Journal of Applied Physics, Vol.104 (No.10). doi:10.1063/1.3020528 ISSN 0021-8979.
United States. Department of Energy
Rajpalke, Mohana K., Linhart, W. M., Yu, K. M., Birkett, Michael Alexander, Alaria, Jonathan, Bomphrey, John James, Sallis, S., Piper, L. F. J., Jones, T. S. (Tim S.), Ashwin, M. J. and Veal, T. D. (Tim D.) (2014) Bi-induced band gap reduction in epitaxial InSbBi alloys. Applied Physics Letters, Volume 105 (Number 21). Article number 212101. doi:10.1063/1.4902442 ISSN 0003-6951.
Rajpalke, Mohana K., Linhart, W. M., Birkett, Michael Alexander, Yu, K. M., Alaria, Jonathan, Kopaczek, Jan, Kudrawiec, Robert, Jones, T. S. (Tim S.), Ashwin, M. J. and Veal, T. D. (Tim D.) (2014) High Bi content GaSbBi alloys. Journal of Applied Physics, Volume 116 (Number 4). 043511. doi:10.1063/1.4891217 ISSN 0021-8979.
Rajpalke, Mohana K., Linhart, W. M., Birkett, Michael Alexander, Yu, K. M., Scanlon, David O., Buckeridge, John, Jones, T. S. (Tim S.), Ashwin, M. J. and Veal, T. D. (Tim D.) (2013) Growth and properties of GaSbBi alloys. Applied Physics Letters, Volume 103 (Number 14). 142106. doi:10.1063/1.4824077 ISSN 0003-6951.
United States. Department of Energy. Office of Basic Energy Sciences (OBES)
Rajpalke, Mohana K., Linhart, W. M., Yu, K. M., Jones, T. S. (Tim S.), Ashwin, M. J. and Veal, T. D. (Tim D.) (2015) Bi flux-dependent MBE growth of GaSbBi alloys. Journal of Crystal Growth, 425 . pp. 241-244. doi:10.1016/j.jcrysgro.2015.02.093 ISSN 0022-0248.
Rajpalke, Mohana K., Linhart, W. M., Yu, K. M., Birkett, Michael Alexander, Alaria, Jonathan, Bomphrey, John James, Sallis, S., Piper, L. F. J., Jones, T. S. (Tim S.), Ashwin, M. J. and Veal, T. D. (Tim D.) (2014) Bi-induced band gap reduction in epitaxial InSbBi alloys. Applied Physics Letters, Volume 105 (Number 21). Article number 212101. doi:10.1063/1.4902442 ISSN 0003-6951.
University College, London
Buckeridge, John, Scanlon, David O., Veal, T. D. (Tim D.), Ashwin, M. J., Walsh, Aron and Catlow, C. R. A. (2014) N incorporation and associated localized vibrational modes in GaSb. Physical Review B (Condensed Matter and Materials Physics), 89 (1). pp. 1-9. 014107 . doi:10.1103/PhysRevB.89.014107 ISSN 1098-0121.
Rajpalke, Mohana K., Linhart, W. M., Birkett, Michael Alexander, Yu, K. M., Scanlon, David O., Buckeridge, John, Jones, T. S. (Tim S.), Ashwin, M. J. and Veal, T. D. (Tim D.) (2013) Growth and properties of GaSbBi alloys. Applied Physics Letters, Volume 103 (Number 14). 142106. doi:10.1063/1.4824077 ISSN 0003-6951.
University of California, Santa Barbara. Center for Nanoscience Innovation for Defense (CNID)
King, P. D. C., Veal, T. D. (Tim D.), Gallinat, C. S., Koblmueller, G., Bailey, L. R. (Laura R.), Speck, James S. and McConville, C. F. (Chris F.) (2008) Influence of growth conditions and polarity on interface-related electron density in InN. Journal of Applied Physics, Vol.104 (No.10). doi:10.1063/1.3020528 ISSN 0021-8979.
University of Liverpool
Segercrantz, N., Slotte, J., Makkonen, I., Tuomisto, F., Sandall, I. C., Ashwin, M. J. and Veal, T. D. (Tim D.) (2017) Hole density and acceptor-type defects in MBE-grown GaSb1-x Bi x. Journal of Physics D: Applied Physics, 50 (29). 295102. doi:10.1088/1361-6463/aa779a ISSN 0022-3727.
Rajpalke, Mohana K., Linhart, W. M., Yu, K. M., Birkett, Michael Alexander, Alaria, Jonathan, Bomphrey, John James, Sallis, S., Piper, L. F. J., Jones, T. S. (Tim S.), Ashwin, M. J. and Veal, T. D. (Tim D.) (2014) Bi-induced band gap reduction in epitaxial InSbBi alloys. Applied Physics Letters, Volume 105 (Number 21). Article number 212101. doi:10.1063/1.4902442 ISSN 0003-6951.
Kopaczek, J., Rajpalke, Mohana K., Linhart, W. M., Jones, T. S. (Tim S.), Ashwin, M. J., Kudrawiec, R. and Veal, T. D. (Tim D.) (2014) Photoreflectance spectroscopy of GaInSbBi and AlGaSbBi quaternary alloys. Applied Physics Letters, Volume 105 (Number 11). Article number 112102. doi:10.1063/1.4895930 ISSN 0003-6951.
Rajpalke, Mohana K., Linhart, W. M., Birkett, Michael Alexander, Yu, K. M., Alaria, Jonathan, Kopaczek, Jan, Kudrawiec, Robert, Jones, T. S. (Tim S.), Ashwin, M. J. and Veal, T. D. (Tim D.) (2014) High Bi content GaSbBi alloys. Journal of Applied Physics, Volume 116 (Number 4). 043511. doi:10.1063/1.4891217 ISSN 0021-8979.
Rajpalke, Mohana K., Linhart, W. M., Birkett, Michael Alexander, Yu, K. M., Scanlon, David O., Buckeridge, John, Jones, T. S. (Tim S.), Ashwin, M. J. and Veal, T. D. (Tim D.) (2013) Growth and properties of GaSbBi alloys. Applied Physics Letters, Volume 103 (Number 14). 142106. doi:10.1063/1.4824077 ISSN 0003-6951.
University of Warwick
Kopaczek, J., Rajpalke, Mohana K., Linhart, W. M., Jones, T. S. (Tim S.), Ashwin, M. J., Kudrawiec, R. and Veal, T. D. (Tim D.) (2014) Photoreflectance spectroscopy of GaInSbBi and AlGaSbBi quaternary alloys. Applied Physics Letters, Volume 105 (Number 11). Article number 112102. doi:10.1063/1.4895930 ISSN 0003-6951.
WVNano Initiative
Allen, M. W., Swartz, C. H., Myers, T. H., Veal, T. D. (Tim D.), McConville, C. F. (Chris F.) and Durbin, S. M. (2010) Bulk transport measurements in ZnO: the effect of surface electron layers. Physical Review B (Condensed Matter and Materials Physics), Vol.81 (No.7). Article: 075211. doi:10.1103/PhysRevB.81.075211 ISSN 1098-0121.
This list was generated on Thu Mar 28 04:22:12 2024 GMT.