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Journal Article
Linhart, Wojciech W.M., Rajpalke, Mohana M.K., Birkett, Max, Walker, David, Ashwin, M. J. and Veal, T. D. (2018) Nitrogen pair-induced temperature insensitivity of the band gap of GaNSb alloys. Journal of Physics D: Applied Physics, 52 (4). 045105. doi:10.1088/1361-6463/aaeec9 ISSN 0022-3727.
Segercrantz, N., Slotte, J., Makkonen, I., Tuomisto, F., Sandall, I. C., Ashwin, M. J. and Veal, T. D. (Tim D.) (2017) Hole density and acceptor-type defects in MBE-grown GaSb1-x Bi x. Journal of Physics D: Applied Physics, 50 (29). 295102. doi:10.1088/1361-6463/aa779a ISSN 0022-3727.
Rajpalke, Mohana K., Linhart, W. M., Yu, K. M., Jones, T. S. (Tim S.), Ashwin, M. J. and Veal, T. D. (Tim D.) (2015) Bi flux-dependent MBE growth of GaSbBi alloys. Journal of Crystal Growth, 425 . pp. 241-244. doi:10.1016/j.jcrysgro.2015.02.093 ISSN 0022-0248.
Segercrantz, Natalie, Makkonen, Ilja, Slotte, Jonatan, Kujala, Jan, Veal, T. D. (Tim D.), Ashwin, M. J. and Tuomisto, Filip (2015) Increased p-type conductivity in GaNxSb1βx, experimental and theoretical aspects. Journal of Applied Physics, 118 (8). pp. 1-9. 085708. doi:10.1063/1.4929751 ISSN 0021-8979.
Rajpalke, Mohana K., Linhart, W. M., Yu, K. M., Birkett, Michael Alexander, Alaria, Jonathan, Bomphrey, John James, Sallis, S., Piper, L. F. J., Jones, T. S. (Tim S.), Ashwin, M. J. and Veal, T. D. (Tim D.) (2014) Bi-induced band gap reduction in epitaxial InSbBi alloys. Applied Physics Letters, Volume 105 (Number 21). Article number 212101. doi:10.1063/1.4902442 ISSN 0003-6951.
Vasheghani Farahani, Sepehr, Veal, T. D. (Tim D.), Mudd, James J., Scanlon, David O., Watson, G. W., Bierwagen, O., White, M. E., Speck, James S. and McConville, C. F. (Chris F.) (2014) Valence-band density of states and surface electron accumulation in epitaxial SnO2 films. Physical Review B (Condensed Matter and Materials Physics), Volume 90 (Number 15). Article number 155413 . doi:10.1103/PhysRevB.90.155413 ISSN 1098-0121.
Kopaczek, J., Rajpalke, Mohana K., Linhart, W. M., Jones, T. S. (Tim S.), Ashwin, M. J., Kudrawiec, R. and Veal, T. D. (Tim D.) (2014) Photoreflectance spectroscopy of GaInSbBi and AlGaSbBi quaternary alloys. Applied Physics Letters, Volume 105 (Number 11). Article number 112102. doi:10.1063/1.4895930 ISSN 0003-6951.
Rajpalke, Mohana K., Linhart, W. M., Birkett, Michael Alexander, Yu, K. M., Alaria, Jonathan, Kopaczek, Jan, Kudrawiec, Robert, Jones, T. S. (Tim S.), Ashwin, M. J. and Veal, T. D. (Tim D.) (2014) High Bi content GaSbBi alloys. Journal of Applied Physics, Volume 116 (Number 4). 043511. doi:10.1063/1.4891217 ISSN 0021-8979.
Zhuang, Qian D., Anyebe, Ezekiel A., SΓ‘nchez, Ana M., Rajpalke, Mohana K., Veal, T. D. (Tim D.), Zhukov, Alexander, Robinson, Benjamin J., Anderson, Frazer, Kolosov, Oleg and Falβko, Vladimir (2014) Graphitic platform for self-catalysed InAs nanowires growth by molecular beam epitaxy. Nanoscale Research Letters, Volume 9 (Number 1). Article number 321. doi:10.1186/1556-276X-9-321 ISSN 1556-276X.
Buckeridge, John, Scanlon, David O., Veal, T. D. (Tim D.), Ashwin, M. J., Walsh, Aron and Catlow, C. R. A. (2014) N incorporation and associated localized vibrational modes in GaSb. Physical Review B (Condensed Matter and Materials Physics), 89 (1). pp. 1-9. 014107 . doi:10.1103/PhysRevB.89.014107 ISSN 1098-0121.
Rajpalke, Mohana K., Linhart, W. M., Birkett, Michael Alexander, Yu, K. M., Scanlon, David O., Buckeridge, John, Jones, T. S. (Tim S.), Ashwin, M. J. and Veal, T. D. (Tim D.) (2013) Growth and properties of GaSbBi alloys. Applied Physics Letters, Volume 103 (Number 14). 142106. doi:10.1063/1.4824077 ISSN 0003-6951.
Ashwin, M. J., Morris, R. J. H., Walker, David, Thomas, Pam A., Dowsett, M. G., Jones, T. S. and Veal, T. D. (2013) Molecular-beam epitaxy and lattice parameter of GaNxSb1βx : deviation from Vegard's law for x>0.02. Journal of Physics D: Applied Physics, Volume 46 (Number 26). Article number 264003. doi:10.1088/0022-3727/46/26/264003 ISSN 0022-3727.
Vasheghani Farahani, Sepehr, MuΓ±oz-SanjosΓ©, V., ZΓΊΓ±iga-PΓ©rez, J., McConville, C. F. (Chris F.) and Veal, T. D. (Tim D.) (2013) Temperature dependence of the direct bandgap and transport properties of CdO. Applied Physics Letters, Volume 102 (Number 2). Article number 022102. doi:10.1063/1.4775691 ISSN 0003-6951.
Mudd, James J., Kybert, Nicholas J., Linhart, W. M., Buckle, L., Ashley, Tim, King, P. D. C., Jones, T. S. (Tim S.), Ashwin, M. J. and Veal, T. D. (Tim D.) (2013) Optical absorption by dilute GaNSb alloys : influence of N pair states. Applied Physics Letters, Volume 103 (Number 4). Article number 042110. doi:10.1063/1.4816519 ISSN 0003-6951.
Linhart, W. M., Chai, J., McConville, C. F. (Chris F.), Durbin, S. M. and Veal, T. D. (Tim D.) (2013) Sulfur passivation of surface electrons in highly Mg-doped InN. Journal of Applied Physics, Volume 114 (Number 10). Article number 103702. doi:10.1063/1.4820483 ISSN 0021-8979.
Veal, T. D. (Tim D.), King, P. D. C. and McConville, C. F. (Chris F.) (2012) Electronic properties of post-transition metal oxide semiconductor surfaces. Functional Metal Oxide Nanostructures, Volume 149 . pp. 127-145. doi:10.1007/978-1-4419-9931-3_6 ISSN 0933-033X.
Linhart, W. M., Chai, J., Morris, R. J. H. (Richard J. H.), Dowsett, M. G., McConville, C. F. (Chris F.), Durbin, S. and Veal, T. D. (Tim D.) (2012) Giant reduction of InN surface electron accumulation : compensation of surface donors by Mg dopants. Physical Review Letters, Vol.109 (No.24). Article no. 247605. doi:10.1103/PhysRevLett.109.247605 ISSN 0031-9007.
Vasheghani Farahani, Sepehr, Veal, T. D. (Tim D.), SΓ‘nchez, Ana M., Bierwagen, O., White, M. E., Gorfman, S., Thomas, Pam A., Speck, James S. and McConville, C. F. (Chris F.) (2012) Influence of charged-dislocation density variations on carrier mobility in heteroepitaxial semiconductors : the case of SnO2 on sapphire. Physical Review B (Condensed Matter and Materials Physics), Volume 86 (Number 24). Article number 245315. doi:10.1103/PhysRevB.86.245315 ISSN 1098-0121.
Chai, Jessica H., Myers, Thomas H., Song, Young-Wook, Reeves, Roger J., Linhart, W. M., Morris, R. J. H. (Richard J. H.), Veal, T. D. (Tim D.), Dowsett, M. G., McConville, C. F. (Chris F.) and Durbin, Steven M. (2012) MBE growth and characterization of Mn-doped InN. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Volume 30 (Number 2). 02B124. doi:10.1116/1.3687903 ISSN 1071-1023.
Tuna, Γ., Linhart, W. M., Lutsenko, E.V., Rzheutski, M.V., Yablonskii, G.P., Veal, T. D. (Tim D.), McConville, C. F. (Chris F.), Giesen, C., Kalisch, H., Vescan, A. and Heuken, M. (2012) Structural, electrical and optical characterization of MOCVD grown In-rich InGaN layers. Journal of Crystal Growth, Vol. 358 . pp. 51-56. doi:10.1016/j.jcrysgro.2012.07.040 ISSN 00220248.
Zhang, K. H. L., Lazarov, V. K., Veal, T. D. (Tim D.), Oropeza, F. E., McConville, C. F. (Chris F.), Egdell, R. G. and Walsh, Aron (2011) Thickness dependence of the strain, band gap and transport properties of epitaxial In2O3thin films grown on Y-stabilised ZrO2(111). Journal of Physics: Condensed Matter, Vol.23 (No.33). Article 334211. doi:10.1088/0953-8984/23/33/334211 ISSN 0953-8984.
Vasheghani Farahani, Sepehr, Veal, T. D. (Tim D.), King, P. D. C., ZΓΊΓ±iga-PΓ©rez, J., MuΓ±oz-SanjosΓ©, V. and McConville, C. F. (Chris F.) (2011) Electron mobility in CdO films. Journal of Applied Physics, Vol.109 (No.7). 073712. doi:10.1063/1.3562141 ISSN 0021-8979.
Allen, M. W., Zemlyanov, D. Y., Waterhouse, G. I. N., Metson, J. B., Veal, T. D. (Tim D.), McConville, C. F. (Chris F.) and Durbin, S. M. (2011) Polarity effects in the x-ray photoemission of ZnO and other wurtzite semiconductors. Applied Physics Letters, Vol.98 (No.10). p. 101906. doi:10.1063/1.3562308 ISSN 0003-6951.
King, P. D. C. and Veal, T. D. (Tim D.) (2011) Conductivity in transparent oxide semiconductors. Journal of Physics: Condensed Matter, Vol.23 (No.33). p. 334214. doi:10.1088/0953-8984/23/33/334214 ISSN 0953-8984.
Ashwin, M. J., Veal, T. D. (Tim D.), Bomphrey, John James, Dunn, I. R., Walker, D., Thomas, Pam A. and Jones, T. S. (Tim S.) (2011) Controlled nitrogen incorporation in GaNSb alloys. AIP Advances, Vol. 1 (No. 3). 032159. doi:10.1063/1.3643259 ISSN 2158-3226.
Bailey, L. R., Veal, T. D. (Tim D.) and McConville, C. F. (Chris F.) (2011) Stable passivation of InN surface electron accumulation with sulphur treatment. Physica Status Solidi (c), Vol. 8 (No. 5). pp. 1605-1607. doi:10.1002/pssc.201100552 ISSN 18626351.
Linhart, W. M., Tuna, Γ., Veal, T. D. (Tim D.), Mudd, James J., Giesen, C., Heuken, M. and McConville, C. F. (Chris F.) (2011) Surface electronic properties of In-rich InGaN alloys grown by MOCVD. physica status solidi (c), Vol.9 (No.3-4). pp. 662-665. doi:10.1002/pssc.201100463 ISSN 1862-6351.
Linhart, W. M., Veal, T. D. (Tim D.), King, P. D. C., Koblmueller, G., Gallinat, C. S., Speck, James S. and McConville, C. F. (Chris F.) (2010) Surface, bulk, and interface electronic properties of nonpolar InN. Applied Physics Letters, Vol.97 (No.11). Article: 112103. doi:10.1063/1.3488821 ISSN 0003-6951.
King, P. D. C., Veal, T. D. (Tim D.), McConville, C. F. (Chris F.), Zuniga-Perez, J., Munoz-Sanjose, V., Hopkinson, M., Rienks, E. D. L., Jensen, M. Fuglsang and Hofmann, Ph. (2010) Surface band-gap narrowing in quantized electron accumulation layers. Physical Review Letters, Vol.104 (No.25). Article no. 256803. doi:10.1103/PhysRevLett.104.256803 ISSN 0031-9007.
King, P. D. C., McKenzie, I. and Veal, T. D. (Tim D.) (2010) Observation of shallow-donor muonium in Ga2O3: evidence for hydrogen-induced conductivity. Applied Physics Letters, Vol.96 (No.6). Article: 062110. doi:10.1063/1.3309694 ISSN 0003-6951.
Allen, M. W., Swartz, C. H., Myers, T. H., Veal, T. D. (Tim D.), McConville, C. F. (Chris F.) and Durbin, S. M. (2010) Bulk transport measurements in ZnO: the effect of surface electron layers. Physical Review B (Condensed Matter and Materials Physics), Vol.81 (No.7). Article: 075211. doi:10.1103/PhysRevB.81.075211 ISSN 1098-0121.
Bailey, L. R. (Laura R.), Veal, T. D. (Tim D.), Kendrick, C. E., Durbin, S. M. and McConville, C. F. (Chris F.) (2009) Sulfur passivation of InN surface electron accumulation. Applied Physics Letters, Vol.95 (No.19). Article no. 192111. doi:10.1063/1.3263725 ISSN 0003-6951.
Zhang, K. H. L., Payne, D. J., Palgrave, R. G., Lazarov, V. K., Chen, W., Wee, A. T. S., McConville, C. F. (Chris F.), King, P. D. C., Veal, T. D. (Tim D.), Panaccione, G., Lacovig, P. and Egdell, R. G. (2009) Surface structure and electronic properties of In2O3(111) single-crystal thin films grown on Y-stabilized ZrO2(111). Chemistry of Materials, Vol.21 (No.19). pp. 4353-4355. doi:10.1021/cm901127r ISSN 0897-4756.
King, P. D. C., Lichti, R. L., Celebi, Y. G., Gil, J. M., Vilao, R. C., Alberto, H. V., Duarte, J. Piroto, Payne, D. J., Egdell, R. G., McKenzie, I., McConville, C. F. (Chris F.), Cox, S. F. J. and Veal, T. D. (Tim D.) (2009) Shallow donor state of hydrogen in In2O3 and SnO2: implications for conductivity in transparent conducting oxides. Physical Review B (Condensed Matter and Materials Physics), Vol.80 (No.8). Article no. 081201(R). doi:10.1103/PhysRevB.80.081201 ISSN 1098-0121.
Bourlange, A., Payne, D. J., Palgrave, R. G., Zhang, H., Foord, J. S., Egdell, R. G., Jacobs, R. M. J., Veal, T. D. (Tim D.), King, Philip David and McConville, C. F. (Chris F.) (2009) The influence of Sn doping on the growth of In2O3 on Y-stabilized ZrO2(100) by oxygen plasma assisted molecular beam epitaxy. Journal of Applied Physics, Vol.106 (No.1). Article no. 013703. doi:10.1063/1.3153966 ISSN 0021-8979.
King, P. D. C., Veal, T. D. (Tim D.), Schaff, W. J. and McConville, C. F. (Chris F.) (2009) Surface electronic properties of Mg-doped InAlN alloys. Physica Status Solidi. B: Basic Solid State Physics, Vol.246 (No.6). pp. 1169-1172. doi:10.1002/pssb.200880766 ISSN 0370-1972.
King, P. D. C., Veal, T. D. (Tim D.), Fuchs, F., Wang, Ch. Y., Payne, D. J., Bourlange, A., Zhang, H., Bell, Gavin R., Cimalla, V., Ambacher, O., Egdell, R. G., Bechstedt, Friedhelm and McConville, C. F. (Chris F.) (2009) Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedral In2O3. Physical Review B (Condensed Matter and Materials Physics), Vol.79 (No.20). pp. 205211-1. doi:10.1103/PhysRevB.79.205211 ISSN 1098-0121.
King, P. D. C., Veal, T. D. (Tim D.), Schleife, A., Zuniga-Perez, J., Martel, B., Jefferson, P. H., Fuchs, F., Munoz-Sanjose, V., Bechstedt, F. and McConville, C. F. (Chris F.) (2009) Valence-band electronic structure of CdO, ZnO, and MgO from x-ray photoemission spectroscopy and quasi-particle-corrected density-functional theory calculations. Physical Review B (Condensed Matter and Materials Physics), Vol.79 (No.20). Article no. 205205. doi:10.1103/PhysRevB.79.205205 ISSN 1098-0121.
King, P. D. C., Veal, T. D. (Tim D.) and McConville, C. F. (Chris F.) (2009) Unintentional conductivity of indium nitride: transport modelling and microscopic origins. Journal of Physics: Condensed Matter, Vol.21 (No.17). Article no. 174201. doi:10.1088/0953-8984/21/17/174201 ISSN 0953-8984.
Buckle, L., Coomber, S. D., Ashley, Tim, Jefferson, Paul Harvey, Walker, David, Veal, T. D., McConville, C. F. and Thomas, Pam A. (2009) Growth and characterisation of dilute antimonide nitride materials for long-wavelength applications. Microelectronics Journal, Vol.40 (No.3 Sp. Iss. SI). pp. 399-402. doi:10.1016/j.mejo.2008.06.007 ISSN 0026-2692.
King, P. D. C., Veal, T. D. (Tim D.), McConville, C. F. (Chris F.), King, P. J. C., Cox, S. F. J., Celebi, Y. G. and Lichti, R. L. (2009) The donor nature of muonium in undoped, heavily n-type and p-type InAs. Journal of Physics: Condensed Matter, Vol.21 (No.7). Article no. 075803. doi:10.1088/0953-8984/21/7/075803 ISSN 0953-8984.
King, P. D. C., Veal, T. D. (Tim D.), Jefferson, P. H., Zuniga-Perez, J., Munoz-Sanjose, V. and McConville, C. F. (Chris F.) (2009) Unification of the electrical behavior of defects, impurities, and surface states in semiconductors: Virtual gap states in CdO. Physical Review B (Condensed Matter and Materials Physics), Vol.79 (No.3). Article: 035203. doi:10.1103/PhysRevB.79.035203 ISSN 1098-0121.
Bailey, L. R. (Laura R.), Veal, T. D. (Tim D.), King, P. D. C., McConville, C. F. (Chris F.), Pereiro, J., Grandal, J., Sanchez-Garcia, M. A., Munoz, E. and Calleja, E. (2008) Band bending at the surfaces of In-rich InGaN alloys. Journal of Applied Physics, Vol.104 (No.11). doi:10.1063/1.3033373 ISSN 0021-8979.
Veal, T. D. (Tim D.), King, Philip David, Hatfield, S. A., Bailey, L. R. (Laura R.), McConville, C. F. (Chris F.), Martel, B., Moreno, J. C., Frayssinet, E., Semond, F. and ZΓΊΓ±iga-PΓ©rez, J. (2008) Valence band offset of the ZnO/AlN heterojunction determined by X-ray photoemission spectroscopy. Applied Physics Letters, Vol.93 (No.20). p. 202108. doi:10.1063/1.3032911 ISSN 0003-6951.
King, P. D. C., Veal, T. D. (Tim D.), Gallinat, C. S., Koblmueller, G., Bailey, L. R. (Laura R.), Speck, James S. and McConville, C. F. (Chris F.) (2008) Influence of growth conditions and polarity on interface-related electron density in InN. Journal of Applied Physics, Vol.104 (No.10). doi:10.1063/1.3020528 ISSN 0021-8979.
King, P. D. C., Veal, T. D. (Tim D.), Lowe, Martin J. and McConville, C. F. (Chris F.) (2008) Surface electronic properties of clean and S-terminated InSb(001) and (111)B. Journal of Applied Physics, Volume 104 (Number 8). Article No. 083709 . doi:10.1063/1.3000567 ISSN 0021-8979.
Piper, L. F. J., Colakerol, Leyla, King, P. D. C., Schleife, A., Zuniga-Perez, J., Glans, Per-Anders, Learmonth, Tim, Federov, A., Veal, T. D. (Tim D.), Fuchs, F., Munoz-Sanjose, V., Bechstedt, F., McConville, C. F. (Chris F.) and Smith, Kevin E. (2008) Observation of quantized subband states and evidence for surface electron accumulation in CdO from angle-resolved photoemission spectroscopy. Physical Review B (Condensed Matter and Materials Physics), Vol.78 (No.16). Article No. 165127. doi:10.1103/PhysRevB.78.165127 ISSN 1098-0121.
King, P. D. C., Veal, T. D. (Tim D.), Payne, D. J., Bourlange, A., Egdell, R. G. and McConville, C. F. (Chris F.) (2008) Surface electron accumulation and the charge neutrality level in In2O3. Physical Review Letters, Vol.101 (No.11). Article no. 116808. doi:10.1103/PhysRevLett.101.116808 ISSN 0031-9007.
King, P. D. C., Veal, T. D. (Tim D.), Kendrick, C. E., Bailey, L. R. (Laura R.), Durbin, Steven M. and McConville, C. F. (Chris F.) (2008) InN/GaN valence band offset : high-resolution x-ray photoemission spectroscopy measurements. Physical Review B (Condensed Matter and Materials Physics), Volume 78 (Number 3). Article number 033308. doi:10.1103/PhysRevB.78.033308 ISSN 1098-0121.
King, Philip David, Veal, T. D., Adikimenakis, A., Lu, H., Bailey, L. R., Iliopoulos, E., Georgakilas, A., Schaff, William Joseph and McConville, C. F. (2008) Surface electronic properties of undoped InAlN alloys. Applied Physics Letters, Vol.92 (No.17). p. 172105. doi:10.1063/1.2913765 ISSN 0003-6951.
King, P. D. C., Veal, T. D., Lu, H., Jefferson, Paul Harvey, Hatfield, S. A., Schaff, William Joseph and McConville, C. F. (2008) Surface electronic properties of n- and p-type InGaN alloys. Physica Status Solidi. B: Basic Research, Vol.245 (No.5). pp. 881-883. doi:10.1002/pssb.200778452 ISSN 0370-1972.
Veal, T. D. (Tim D.), Jefferson, Paul Harvey, King, Philip David, Hatfield, S. A., McConville, C. F. (Chris F.), ZΓΊΓ±iga-PΓ©rez, J. and MuΓ±oz-SanjosΓ©, V. (2008) Response to βComment on `Bandgap and effective mass determination of epitaxial cadmium oxide'β [Appl. Phys. Lett. 92, 106103 (2008)]. Applied Physics Letters, Vol.92 (No.10). p. 106104. doi:10.1063/1.2896605 ISSN 0003-6951.
King, P. D. C., Veal, T. D. (Tim D.) and McConville, C. F. (Chris F.) (2008) Nonparabolic coupled Poisson-Schrodinger solutions for quantized electron accumulation layers : Band bending, charge profile, and subbands at InN surfaces. Physical Review B (Condensed Matter and Materials Physics), Vol.77 (No.12). Article No.125305 . doi:10.1103/PhysRevB.77.125305 ISSN 1098-0121.
King, P. D. C., Veal, T. D. (Tim D.), McConville, C. F. (Chris F.), Fuchs, F., Furthmueller, J., Bechstedt, F., Schoermann, J., As, D. J., Lischka, K., Lu, Hai and Schaff, W. J. (2008) Valence band density of states of zinc-blende and wurtzite InN from x-ray photoemission spectroscopy and first-principles calculations. Physical Review B (Condensed Matter and Materials Physics), Vol.77 (No.11). Article No. 115213. doi:10.1103/PhysRevB.77.115213 ISSN 1098-0121.
King, P. D. C., Veal, T. D., Lu, Hai, Hatfield, S. A., Schaff, William Joseph and McConville, C. F. (2008) The influence of conduction band plasmons on core-level photoemission spectra of InN. Surface Science, Volume 602 (Number 4). pp. 871-875. doi:10.1016/j.susc.2007.12.026 ISSN 0039-6028.
Jefferson, Paul Harvey, Hatfield, S. A., Veal, T. D. (Tim D.), King, Philip David, McConville, C. F. (Chris F.), ZΓΊΓ±iga-PΓ©rez, J. and MuΓ±oz-SanjosΓ©, V. (2008) Bandgap and effective mass of epitaxial cadmium oxide. Applied Physics Letters, Vol.92 (No.2). 022101. doi:10.1063/1.2833269 ISSN 0003-6951.
King, P. D. C., Veal, T. D., Jefferson, P. H., Hatfield, S. A., Piper, L. F. J., McConville, C. F., Fuchs, F., Furthmueller, J., Bechstedt, Friedhelm, Lu, H. and Schaff, William Joseph (2008) Determination of the branch-point energy of InN : chemical trends in common-cation and common-anion semiconductors. Physical Review B (Condensed Matter and Materials Physics), Vol.77 (No.4). Article no. 045316 . doi:10.1103/PhysRevB.77.045316 ISSN 1098-0121.
King, Philip David, Veal, T. D. (Tim D.), Hatfield, S. A., Jefferson, Paul Harvey, McConville, C. F. (Chris F.), Kendrick, C. E., Swartz, C. H. and Durbin, Steven M. (2007) X-ray photoemission spectroscopy determination of the InN/yttria stabilized cubic-zirconia valence band offset. Applied Physics Letters, Vol.91 (No.11). p. 112103. doi:10.1063/1.2783214 ISSN 0003-6951.
King, Philip David, Veal, T. D., McConville, C. F., Fuchs, Frank, FurthmΓΌller, JΓΌrgen, Bechstedt, Friedhelm, Schley, P., Goldhahn, R., SchΓΆrmann, J., As, D. J., Lischka, K., Muto, D., Naoi, H., Nanishi, Y., Lu, H. and Schaff, William Joseph (2007) Universality of electron accumulation at wurtzite c- and a-plane and zinc-blende InN surfaces. Applied Physics Letters, Vol.91 (No.9). 092101. doi:10.1063/1.2775807 ISSN 0003-6951.
Merrick, M., Cripps, S. A., Murdin, B. N., Hosea, T. J. C., Veal, T. D. (Tim D.), McConville, C. F. (Chris F.) and Hopkinson, M. (2007) Photoluminescence of InNAs alloys: S-shaped temperature dependence and conduction-band nonparabolicity. Physical Review B, Vol.76 (No.7). Article: 075209. doi:10.1103/PhysRevB.76.075209 ISSN 1098-0121.
Piper, L. F. J., Jefferson, P. H., Veal, T. D. (Tim D.), McConville, C. F. (Chris F.), Zuniga-Perez, J. and Munoz-Sanjose, V. (2007) X-ray photoemission studies of the electronic structure of single-crystalline CdO(100). Superlattices and Microstructures, Vol.42 (No.1-6). pp. 197-200. doi:10.1016/j.spmi.2007.04.029 ISSN 0749-6036.
Jefferson, P. H., Buckle, L., Bennett, B. R., Veal, T. D., Walker, David, Wilson, Neil R., Piper, L. F. J., Thomas, Pam A., Ashley, T. and McConville, C. F. (2007) Growth of dilute nitride alloys of GaInSb lattice-matched to GaSb. Journal of Crystal Growth, Vol.304 (No.2). pp. 338-341. doi:10.1016/j.jcrysgro.2007.02.033 ISSN 0022-0248.
Jefferson, P. H., Buckle, L., Walker, David, Veal, T. D., Coomber, S., Thomas, Pam A., Ashley, T. and McConville, C. F. (2007) Growth and characterisation of high quality MBE grown InNxSb1-x. physica status solidi (RRL) β Rapid Research Letters, Vol.1 (No.3). pp. 104-106. doi:10.1002/pssr.200701035 ISSN 1862-6254.
King, Philip David, Veal, T. D., Jefferson, Paul Harvey, McConville, C. F., Wang, Tao, Parbrook, P. J., Lu, H. and Schaff, William Joseph (2007) Valence band offset of InN/AlN heterojunctions measured by X-ray photoelectron spectroscopy. Applied Physics Letters, Vol.90 (No.13). p. 132105. doi:10.1063/1.2716994 ISSN 0003-6951.
King, P. D. C., Veal, T. D. (Tim D.), Jefferson, P. H., McConville, C. F. (Chris F.), Lu, Hai and Schaff, W. J. (2007) Variation of band bending at the surface of Mg-doped InGaN: evidence of p-type conductivity across the composition range. Physical Review B, 75 (11). Article: 115312. doi:10.1103/PhysRevB.75.115312 ISSN 1098-0121.
Veal, T. D. (Tim D.), Piper, L. F. J., Phillips, M. R., Zareie, M. H., Lu, Hai, Schaff, W. J. and McConville, C. F. (Chris F.) (2007) Doping-dependence of subband energies in quantized electron accumulation at InN surfaces. Physica Status Solidi (a), Vol.204 (No.2). pp. 536-542. doi:10.1002/pssa.200673226 ISSN 0031-8965.
Colakerol, Leyla, Veal, T. D. (Tim D.), Jeong, Hae-Kyung, Plucinski, Lukasz, DeMasi, Alex, Learmonth, Timothy, Glans, Per-Anders, Wang, Shancai, Zhang, Yufeng, Piper, L. F. J., Jefferson, P. H., Fedorov, Alexei, Chen, Tai-Chou, Moustakas, T. D., McConville, C. F. (Chris F.) and Smith, Kevin E. (2006) Quantized electron accumulation states in indium nitride studied by angle-resolved photoemission spectroscopy. PHYSICAL REVIEW LETTERS, 97 (23). doi:10.1103/PhysRevLett.97.237601 ISSN 0031-9007.
Veal, T. D., Jefferson, Paul Harvey, Piper, L. F. J., McConville, C. F., Joyce, T. B., Chalker, P. R., Considine, L., Lu, H. and Schaff, William Joseph (2006) Transition from electron accumulation to depletion at InGaN surfaces. Applied Physics Letters, Vol.89 (No.20). p. 202110. doi:10.1063/1.2387976 ISSN 0003-6951.
Jefferson, Paul Harvey, Veal, T. D. (Tim D.), Piper, L. F. J., Bennett, B. R., McConville, C. F. (Chris F.), Murdin, B. N., Buckle, L., Smith, G. W. and Ashley, T. (2006) Band anticrossing in GaNxSb1βx. Applied Physics Letters, Vol.89 (No.11). p. 111921. doi:10.1063/1.2349832 ISSN Band anticrossing in GaNxSb1βx.
Piper, L. F. J., Veal, T. D., McConville, C. F., Lu, H. and Schaff, William Joseph (2006) Origin of the n-type conductivity of InN: the role of positively charged dislocations. Applied Physics Letters, Vol.88 (No.25). p. 252109. doi:10.1063/1.2214156 ISSN 0003-6951.
Piper, L. F. J., Veal, T. D. (Tim D.), Lowe, M. J. and McConville, C. F. (Chris F.) (2006) Electron depletion at InAs free surfaces : doping-induced acceptorlike gap states. Physical Review B (Condensed Matter and Materials Physics), Vol.73 (No.19). Article: 195321. doi:10.1103/PhysRevB.73.195321 ISSN 1098-0121.
Bell, Gavin R., Veal, T. D. (Tim D.), Frost, J. A. and McConville, C. F. (Chris F.) (2006) Dielectric function of degenerate InSb: Beyond the hydrodynamic model. Physical Review B (Condensed Matter and Materials Physics), 73 (15). doi:10.1103/PhysRevB.73.153302 ISSN 1098-0121.
Veal, T. D. (Tim D.), Piper, L. F. J., Jefferson, Paul Harvey, Mahboob, I., McConville, C. F. (Chris F.), Merrick, M., Hosea, T. J. C., Murdin, B. N. and Hopkinson, M. (2005) Photoluminescence spectroscopy of bandgap reduction in dilute InNAs alloys. Applied Physics Letters, Vol.87 (No.18). p. 182114. doi:10.1063/1.2126117 ISSN 0003-6951.
Veal, T. D. (Tim D.), Piper, L. F. J., Jollands, Stuart, Bennett, B. R., Jefferson, Paul Harvey, Thomas, Pam A., McConville, C. F. (Chris F.), Murdin, B. N., Buckle, L., Smith, G. W. and Ashley, T. (2005) Band gap reduction in GaNSb alloys due to the anion mismatch. Applied Physics Letters, Vol.87 (No.13). p. 132101. doi:10.1063/1.2058224 ISSN 0003-6951.
Veal, T. D. (Tim D.), Mahboob, I., Piper, L. F. J., McConville, C. F. (Chris F.) and Hopkinson, M. (2004) Core-level photoemission spectroscopy of nitrogen bonding in GaNxAs1βx alloys. Applied Physics Letters, Vol.85 (No.9). 091550. doi:10.1063/1.1784886 ISSN 0003-6951.
Mahboob, I., Veal, T. D. (Tim D.) and McConville, C. F. (Chris F.) (2003) Electron dynamics in InNxSb1βx. Applied Physics Letters, Vol.83 (No.11). pp. 2169-2171. doi:10.1063/1.1611270 ISSN 0003-6951.
Veal, T. D. (Tim D.), Mahboob, I., McConville, C. F. (Chris F.), Burke, T. M. and Ashley, T. (2003) Effect of hydrogen in dilute InNxSb1βx alloys grown by molecular beam epitaxy. Applied Physics Letters, Vol.83 (No.9). pp. 1776-1778. doi:10.1063/1.1604463 ISSN 0003-6951.
Veal, T. D. (Tim D.) and McConville, C. F. (Chris F.) (2000) Controlled oxide removal for the preparation of damage-free InAs(110) surfaces. Applied Physics Letters, Vol.77 (No.11). pp. 1665-1667. doi:10.1063/1.1310211 ISSN 0003-6951.
Conference Item
Teherani, Ferechteh Hosseini, Vasheghani Farahani, Sepehr, McConville, C. F. (Chris F.), Veal, T. D. (Tim D.), Schleife, A., Look, David C. and Rogers, David J. (2013) Impact of degenerate n-doping on the optical absorption edge in transparent conducting cadmium oxide. In: Oxide-based Materials and Devices IV, California, USA , 2 Feb 2013. Published in: Proceedings of SPIE - International Society for Optical Engineering, Volume 8626 Article number 862604. doi:10.1117/12.2004359 ISSN 0277-786X.
Rauch, C., Reurings, F., Tuomisto, F., Veal, T. D. (Tim D.), McConville, C. F. (Chris F.), Lu, H., Schaff, W. J., Gallinat, C. S., Koblmueller, G., Speck, James S., Egger, W., Loewe, B., Ravelli, L. and Sojak, S. (2010) In-vacancies in Si-doped InN. In: Fall Meeting of the European-Materials-Research-Society, Warsaw, Poland, September 14-18, 2009. Published in: Physica Status Solidi A, Vol.207 (No.5). pp. 1083-1086. doi:10.1002/pssa.200983120 ISSN 1862-6300.
Schleife, AndrΓ©, Roedl, C., Fuchs, Frank, Furthmueller, J., Bechstedt, Friedhelm, Jefferson, P. H., Veal, T. D. (Tim D.), McConville, C. F. (Chris F.), Piper, L. F. J., DeMasi, A., Smith, K. E., Loesch, H., Goldhahn, R., Cobet, C., Zuniga-Perez, J. and Munoz-Sanjose, V. (2008) Ab-initio studies of electronic and spectroscopic properties of MgO, ZnO and CdO. In: 13th International Conference on II-VI Compounds, Jeju City, South Korea, Sep 10-14, 2007. Published in: European Polymer Journal, Volume 53 (Number 5, Part 2, Special Issue SI). pp. 2811-2815. ISSN 0014-3057.
Veal, T. D. (Tim D.), King, P. D. C., Walker, Marc, McConville, C. F. (Chris F.), Lu, Hai and Schaff, W. J. (2007) In-adlayers on non-polar and polar InN surfaces: Ion scattering and photoemission studies. In: 24th International Conference on Defects in Semiconductors, Albuquerque, NM, JUL 22-27, 2007. Published in: Physica B: Condensed Matter, Vol.401 pp. 351-354. doi:10.1016/j.physb.2007.08.185 ISSN 0921-4526.
Piper, L. F. J., Veal, T. D. (Tim D.), McConville, C. F. (Chris F.), Lu, H. and Schaff, W. J. (2006) InN: Fermi level stabilization by low-energy ion bombardment. In: 6th International Conference on Nitride Semiconductors (ICNS-6), Bremen, GERMANY, AUG 28-SEP 02, 2005. Published in: Physica Status Solidi C - Current Topics in Solid State Physics, Vol 3, No 6, 3 (6). pp. 1841-1845. ISBN *************. doi:10.1002/pssc.200565104 ISSN 1610-1634.
Journal Item
Veal, T. D. (Tim D.), Jefferson, P. H., King, P. D. C., Hatfield, S. A., McConville, C. F. (Chris F.), Zuniga-Perez, J. and Munoz-Sanjose, V. (2008) Response to "Comment on 'Bandgap and effective mass determination of epitaxial cadmium oxide'" [Appl. Phys. Lett. 92, 106103 (2008)]. Applied Physics Letters, Vol.92 (No.10). Article No.106104 . ISSN 0003-6951 doi:10.1063/1.2896605
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