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Number of items: 43.
Academy of Finland
Prest, M. J. (Martin J.), Muhonen, Juha, Prunnila, Mika, Gunnarsson, David, Shah, V. A., Richardson-Bullock, J. S., Dobbie, A. (Andrew), Myronov, Maksym, Morris, R. J. H. (Richard J. H.), Whall, Terry E., Parker, Evan H. C. and Leadley, D. R. (David R.) (2011) Strain enhanced electron cooling in a degenerately doped semiconductor. Applied Physics Letters, Vol.99 (No.25). Article: 251908. doi:10.1063/1.3670330 ISSN 0003-6951.
Advantage West Midlands (AWM)
Burrows, Christopher W., Dobbie, A. (Andrew), Myronov, Maksym, Hase, Thomas P. A., Wilkins, Stuart B., Walker, Marc, Mudd, James J., Maskery, Ian, Lees, Martin R., McConville, C. F. (Chris F.), Leadley, D. R. (David R.) and Bell, Gavin R. (2013) Heteroepitaxial growth of ferromagnetic MnSb(0001) films on Ge/Si(111) virtual substrates. Crystal Growth & Design, Volume 13 (Number 11). pp. 4923-4929. doi:10.1021/cg4011136 ISSN 1528-7483.
Centrum fyziky nízkych teplôt a materiálového výskumu v extrémnych podmienkach (CFNT MVEP)
Mironov, O. A., Hassan, A. H. A., Morris, R. J. H. (Richard J. H.), Dobbie, A. (Andrew), Uhlarz, M., Chrastina, Daniel, Hague, J. P., Kiatgamolchai, S., Beanland, R., Gabani, S., Berkutov, I. B., Helm, Manfred, Drachenko, O., Myronov, Maksym and Leadley, D. R. (David R.) (2014) Ultra high hole mobilities in a pure strained Ge quantum well. Thin Solid Films, Volume 557 . pp. 329-333. doi:10.1016/j.tsf.2013.10.118 ISSN 0040-6090.
Deutsche Forschungsgemeinschaft (DFG)
Mironov, O. A., Hassan, A. H. A., Morris, R. J. H. (Richard J. H.), Dobbie, A. (Andrew), Uhlarz, M., Chrastina, Daniel, Hague, J. P., Kiatgamolchai, S., Beanland, R., Gabani, S., Berkutov, I. B., Helm, Manfred, Drachenko, O., Myronov, Maksym and Leadley, D. R. (David R.) (2014) Ultra high hole mobilities in a pure strained Ge quantum well. Thin Solid Films, Volume 557 . pp. 329-333. doi:10.1016/j.tsf.2013.10.118 ISSN 0040-6090.
Engineering and Physical Sciences Research Council (EPSRC)
Mironov, O. A., D’Ambrumenil, Nicholas, Dobbie, A. (Andrew), Leadley, D. R. (David R.), Suslov, A. V. and Green, E. (2016) Fractional quantum Hall states in a Ge quantum well. Physical Review Letters, 116 (17). 176802. doi:10.1103/PhysRevLett.116.176802 ISSN 0031-9007.
Mironov, O. A., Hassan, A. H. A., Morris, R. J. H. (Richard J. H.), Dobbie, A. (Andrew), Uhlarz, M., Chrastina, Daniel, Hague, J. P., Kiatgamolchai, S., Beanland, R., Gabani, S., Berkutov, I. B., Helm, Manfred, Drachenko, O., Myronov, Maksym and Leadley, D. R. (David R.) (2014) Ultra high hole mobilities in a pure strained Ge quantum well. Thin Solid Films, Volume 557 . pp. 329-333. doi:10.1016/j.tsf.2013.10.118 ISSN 0040-6090.
Burrows, Christopher W., Dobbie, A. (Andrew), Myronov, Maksym, Hase, Thomas P. A., Wilkins, Stuart B., Walker, Marc, Mudd, James J., Maskery, Ian, Lees, Martin R., McConville, C. F. (Chris F.), Leadley, D. R. (David R.) and Bell, Gavin R. (2013) Heteroepitaxial growth of ferromagnetic MnSb(0001) films on Ge/Si(111) virtual substrates. Crystal Growth & Design, Volume 13 (Number 11). pp. 4923-4929. doi:10.1021/cg4011136 ISSN 1528-7483.
Shah, V. A., Myronov, Maksym, Dobbie, A. (Andrew) and Leadley, D. R. (David R.) (2013) Introduction of terraces into a reverse linearly graded SiGe buffer on Si(001) substrate and their effect on the buffer's structural properties. ECS Journal of Solid State Science and Technology, Volume 2 (Number 3). Q40-Q44. doi:10.1149/2.018303jss ISSN 2162-8769.
Prest, M. J. (Martin J.), Muhonen, Juha, Prunnila, Mika, Gunnarsson, David, Shah, V. A., Richardson-Bullock, J. S., Dobbie, A. (Andrew), Myronov, Maksym, Morris, R. J. H. (Richard J. H.), Whall, Terry E., Parker, Evan H. C. and Leadley, D. R. (David R.) (2011) Strain enhanced electron cooling in a degenerately doped semiconductor. Applied Physics Letters, Vol.99 (No.25). Article: 251908. doi:10.1063/1.3670330 ISSN 0003-6951.
Simoen, E. (Eddy), Mitard, J., De Jaeger, B., Eneman, G., Dobbie, A. (Andrew), Myronov, Maksym, Whall, Terry E., Leadley, D. R. (David R.), Meuris, M., Hoffmann, T. and Claeys, C. (2011) Low-frequency noise characterization of strained germanium pMOSFETs. IEEE Transactions on Electron Devices, Vol.58 (No.9). pp. 3132-3139. doi:10.1109/TED.2011.2160679 ISSN 0018-9383.
Shah, V. A., Dobbie, A. (Andrew), Myronov, Maksym and Leadley, D. R. (David R.) (2011) High quality relaxed Ge layers grown directly on a Si(001) substrate. Solid-State Electronics, Vol.62 (No.1). pp. 189-194. doi:10.1016/j.sse.2011.03.005 ISSN 0038-1101.
Zhylik, Alexei, Benediktovich, A., Ulyanenkov, Alexander P., Guerault, H., Myronov, Maksym, Dobbie, A. (Andrew), Leadley, D. R. (David R.) and Ulyanenkova, Tatjana (2011) High-resolution x-ray diffraction investigation of relaxation and dislocations in SiGe layers grown on (001), (011), and (111) Si substrates. Journal of applied physics, 109 (12). 123714. doi:10.1063/1.3597828 ISSN 0021-8979.
Liu, Xue-Chao, Myronov, Maksym, Dobbie, A. (Andrew), Nguyen, Van H. and Leadley, D. R. (David R.) (2011) Non-destructive thickness characterization of Si based heterostructure by X-ray diffraction and reflectivity. Solid-State Electronics, Vol.60 (No.1). pp. 42-45. doi:10.1016/j.sse.2011.01.036 ISSN 0038-1101.
Muhonen, Juha, Prest, M. J. (Martin J.), Prunnila, Mika, Gunnarsson, David, Shah, V. A., Dobbie, A. (Andrew), Myronov, Maksym, Morris, R. J. H. (Richard J. H.), Whall, Terry E., Parker, Evan H. C. and Leadley, D. R. (David R.) (2011) Strain dependence of electron-phonon energy loss rate in many-valley semiconductors. Applied Physics Letters, Vol.98 (No.18). p. 182103. doi:10.1063/1.3579524 ISSN 0003-6951.
Liu, Xue-Chao, Myronov, Maksym, Dobbie, A. (Andrew), Nguyen, Van H. and Leadley, D. R. (David R.) (2011) Accuracy of thickness measurement for Ge epilayers grown on SiGe/Ge/Si(100) heterostructure by x-ray diffraction and reflectivity. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol.29 (No.1). 011010. doi:10.1116/1.3530594 ISSN 1071-1023.
Myronov, Maksym, Liu, Xue-Chao, Dobbie, A. (Andrew) and Leadley, D. R. (David R.) (2011) Control of epilayer thickness during epitaxial growth of high Ge content strained Ge/SiGe multilayers by RP-CVD. Journal of Crystal Growth, Vol.318 (No.1). pp. 337-340. doi:10.1016/j.jcrysgro.2010.10.133 ISSN 0022-0248.
Simoen, E. (Eddy), Mitard, J., De Jaeger, B., Eneman, G., Dobbie, A. (Andrew), Myronov, Maksym, Leadley, D. R. (David R.), Meuris, Marc, Hoffmann, T. and Claeys, C. (2011) Defect-related excess low-frequency noise in Ge-on-Si pMOSFETs. IEEE Electron Device Letters, Vol.32 (No.1). pp. 87-89. doi:10.1109/LED.2010.2089968 ISSN 0741-3106.
Shah, V. A., Dobbie, A. (Andrew), Myronov, Maksym and Leadley, D. R. (David R.) (2011) Effect of layer thickness on structural quality of Ge epilayers grown directly on Si(001). Thin Solid Films, Vol.519 (No.22). pp. 7911-7917. doi:10.1016/j.tsf.2011.06.022 ISSN 0040-6090.
Mitard, Jerome, Jaeger, Brice De, Eneman, Geert, Dobbie, A. (Andrew), Myronov, Maksym, Kobayashi, Masaharu, Geypen, Jef, Bender, Hugo, Vincent, B. (Benjamin), Krom, Raymond et al.
(2011)
High hole mobility in 65 nm strained Ge p-Channel field effect transistors with HfO2Gate dielectric.
Japanese Journal of Applied Physics, Vol.50
(No.4).
article no. 04DC17.
doi:10.1143/JJAP.50.04DC17
ISSN 0021-4922.
Liu, Xue-Chao, Myronov, Maksym, Dobbie, A. (Andrew), Morris, R. J. H. (Richard J. H.) and Leadley, D. R. (David R.) (2011) High-quality Ge/Si0.4Ge0.6multiple quantum wells for photonic applications : growth by reduced pressure chemical vapour deposition and structural characteristics. Journal of Physics D : Applied Physics, Vol.44 (No.5). article no. 055102. doi:10.1088/0022-3727/44/5/055102 ISSN 0022-3727.
Myronov, Maksym, Dobbie, A. (Andrew), Shah, V. A., Liu, Xue-Chao, Nguyen, Van H. and Leadley, D. R. (David R.) (2010) High quality strained Ge epilayers on a Si0.2Ge0.8/Ge/Si(100) global strain-tuning platform. Electrochemical and Solid State Letters, Vol.13 (No.11). H388-H390. doi:10.1149/1.3482159 ISSN 1099-0062.
Norris, D. J., Walther, T. (Thomas), Cullis, A. G., Myronov, Maksym, Dobbie, A. (Andrew), Whall, Terry E., Parker, Evan H. C., Leadley, D. R. (David R.), Jaeger, B. De., Lee, W., Meuris, Marc, Watling, J. R. and Asenov, A. (Asen) (2010) TEM analysis of Ge-on-Si MOSFET structures with HfO2dielectric for high performance PMOS device technology. Journal of Physics : Conference Series, Vol.209 . article no. 012061. doi:10.1088/1742-6596/209/1/012061 ISSN 1742-6596.
Norris, D. J., Ross, I. M., Cullis, A. G., Walther, T. (Thomas), Myronov, Maksym, Dobbie, A. (Andrew), Whall, Terry E., Parker, Evan H. C., Leadley, D. R. (David R.), Jaeger, B. De., Lee, W. C. and Meuris, Marc (2010) TEM analysis of Si-passivated Ge-on-Si MOSFET structures for high performance PMOS device technology. Journal of Physics : Conference Series, Vol.241 . article no. 012044. doi:10.1088/1742-6596/241/1/012044 ISSN 1742-6596.
European Commission
Dobbie, A. (Andrew), Myronov, Maksym, Liu, Xue-Chao, Nguyen, Van H., Parker, E. H. C. and Leadley, D. R. (David R.) (2010) Effect of growth rate on the threading dislocation density in relaxed SiGe buffers grown by reduced pressure chemical vapour deposition at high temperature. Semiconductor Science and Technology, Vol.25 (No. 8). article no. 085007 . doi:10.1088/0268-1242/25/8/085007 ISSN 0268-1242.
European Commission (EC)
Shah, V. A., Dobbie, A. (Andrew), Myronov, Maksym and Leadley, D. R. (David R.) (2011) High quality relaxed Ge layers grown directly on a Si(001) substrate. Solid-State Electronics, Vol.62 (No.1). pp. 189-194. doi:10.1016/j.sse.2011.03.005 ISSN 0038-1101.
European Communities (EC)
Prest, M. J. (Martin J.), Muhonen, Juha, Prunnila, Mika, Gunnarsson, David, Shah, V. A., Richardson-Bullock, J. S., Dobbie, A. (Andrew), Myronov, Maksym, Morris, R. J. H. (Richard J. H.), Whall, Terry E., Parker, Evan H. C. and Leadley, D. R. (David R.) (2011) Strain enhanced electron cooling in a degenerately doped semiconductor. Applied Physics Letters, Vol.99 (No.25). Article: 251908. doi:10.1063/1.3670330 ISSN 0003-6951.
European Regional Development Fund (ERDF)
Burrows, Christopher W., Dobbie, A. (Andrew), Myronov, Maksym, Hase, Thomas P. A., Wilkins, Stuart B., Walker, Marc, Mudd, James J., Maskery, Ian, Lees, Martin R., McConville, C. F. (Chris F.), Leadley, D. R. (David R.) and Bell, Gavin R. (2013) Heteroepitaxial growth of ferromagnetic MnSb(0001) films on Ge/Si(111) virtual substrates. Crystal Growth & Design, Volume 13 (Number 11). pp. 4923-4929. doi:10.1021/cg4011136 ISSN 1528-7483.
European Union (EU)
Mironov, O. A., Hassan, A. H. A., Morris, R. J. H. (Richard J. H.), Dobbie, A. (Andrew), Uhlarz, M., Chrastina, Daniel, Hague, J. P., Kiatgamolchai, S., Beanland, R., Gabani, S., Berkutov, I. B., Helm, Manfred, Drachenko, O., Myronov, Maksym and Leadley, D. R. (David R.) (2014) Ultra high hole mobilities in a pure strained Ge quantum well. Thin Solid Films, Volume 557 . pp. 329-333. doi:10.1016/j.tsf.2013.10.118 ISSN 0040-6090.
Hochfeld-Magnetlabor Dresden (HLD)
Mironov, O. A., Hassan, A. H. A., Morris, R. J. H. (Richard J. H.), Dobbie, A. (Andrew), Uhlarz, M., Chrastina, Daniel, Hague, J. P., Kiatgamolchai, S., Beanland, R., Gabani, S., Berkutov, I. B., Helm, Manfred, Drachenko, O., Myronov, Maksym and Leadley, D. R. (David R.) (2014) Ultra high hole mobilities in a pure strained Ge quantum well. Thin Solid Films, Volume 557 . pp. 329-333. doi:10.1016/j.tsf.2013.10.118 ISSN 0040-6090.
Nano-function Network of Excellence (NFNE)
Prest, M. J. (Martin J.), Muhonen, Juha, Prunnila, Mika, Gunnarsson, David, Shah, V. A., Richardson-Bullock, J. S., Dobbie, A. (Andrew), Myronov, Maksym, Morris, R. J. H. (Richard J. H.), Whall, Terry E., Parker, Evan H. C. and Leadley, D. R. (David R.) (2011) Strain enhanced electron cooling in a degenerately doped semiconductor. Applied Physics Letters, Vol.99 (No.25). Article: 251908. doi:10.1063/1.3670330 ISSN 0003-6951.
National Science Foundation (U.S.) (NSF)
Mironov, O. A., D’Ambrumenil, Nicholas, Dobbie, A. (Andrew), Leadley, D. R. (David R.), Suslov, A. V. and Green, E. (2016) Fractional quantum Hall states in a Ge quantum well. Physical Review Letters, 116 (17). 176802. doi:10.1103/PhysRevLett.116.176802 ISSN 0031-9007.
Národný štipendijný program slovenských republiky [National Scholarship Programme of the Slovak Republic]
Mironov, O. A., D’Ambrumenil, Nicholas, Dobbie, A. (Andrew), Leadley, D. R. (David R.), Suslov, A. V. and Green, E. (2016) Fractional quantum Hall states in a Ge quantum well. Physical Review Letters, 116 (17). 176802. doi:10.1103/PhysRevLett.116.176802 ISSN 0031-9007.
Science City Research Alliance
Burrows, Christopher W., Dobbie, A. (Andrew), Myronov, Maksym, Hase, Thomas P. A., Wilkins, Stuart B., Walker, Marc, Mudd, James J., Maskery, Ian, Lees, Martin R., McConville, C. F. (Chris F.), Leadley, D. R. (David R.) and Bell, Gavin R. (2013) Heteroepitaxial growth of ferromagnetic MnSb(0001) films on Ge/Si(111) virtual substrates. Crystal Growth & Design, Volume 13 (Number 11). pp. 4923-4929. doi:10.1021/cg4011136 ISSN 1528-7483.
Seventh Framework Programme (European Commission) (FP7)
Shah, V. A., Myronov, Maksym, Dobbie, A. (Andrew) and Leadley, D. R. (David R.) (2013) Introduction of terraces into a reverse linearly graded SiGe buffer on Si(001) substrate and their effect on the buffer's structural properties. ECS Journal of Solid State Science and Technology, Volume 2 (Number 3). Q40-Q44. doi:10.1149/2.018303jss ISSN 2162-8769.
Simoen, E. (Eddy), Mitard, J., De Jaeger, B., Eneman, G., Dobbie, A. (Andrew), Myronov, Maksym, Whall, Terry E., Leadley, D. R. (David R.), Meuris, M., Hoffmann, T. and Claeys, C. (2011) Low-frequency noise characterization of strained germanium pMOSFETs. IEEE Transactions on Electron Devices, Vol.58 (No.9). pp. 3132-3139. doi:10.1109/TED.2011.2160679 ISSN 0018-9383.
Zhylik, Alexei, Benediktovich, A., Ulyanenkov, Alexander P., Guerault, H., Myronov, Maksym, Dobbie, A. (Andrew), Leadley, D. R. (David R.) and Ulyanenkova, Tatjana (2011) High-resolution x-ray diffraction investigation of relaxation and dislocations in SiGe layers grown on (001), (011), and (111) Si substrates. Journal of applied physics, 109 (12). 123714. doi:10.1063/1.3597828 ISSN 0021-8979.
Shah, V. A., Dobbie, A. (Andrew), Myronov, Maksym and Leadley, D. R. (David R.) (2011) Effect of layer thickness on structural quality of Ge epilayers grown directly on Si(001). Thin Solid Films, Vol.519 (No.22). pp. 7911-7917. doi:10.1016/j.tsf.2011.06.022 ISSN 0040-6090.
Seventh Framework Programme (European Commission) (FP7/2007-2013)
Muhonen, Juha, Prest, M. J. (Martin J.), Prunnila, Mika, Gunnarsson, David, Shah, V. A., Dobbie, A. (Andrew), Myronov, Maksym, Morris, R. J. H. (Richard J. H.), Whall, Terry E., Parker, Evan H. C. and Leadley, D. R. (David R.) (2011) Strain dependence of electron-phonon energy loss rate in many-valley semiconductors. Applied Physics Letters, Vol.98 (No.18). p. 182103. doi:10.1063/1.3579524 ISSN 0003-6951.
Simoen, E. (Eddy), Mitard, J., De Jaeger, B., Eneman, G., Dobbie, A. (Andrew), Myronov, Maksym, Leadley, D. R. (David R.), Meuris, Marc, Hoffmann, T. and Claeys, C. (2011) Defect-related excess low-frequency noise in Ge-on-Si pMOSFETs. IEEE Electron Device Letters, Vol.32 (No.1). pp. 87-89. doi:10.1109/LED.2010.2089968 ISSN 0741-3106.
Mitard, Jerome, Jaeger, Brice De, Eneman, Geert, Dobbie, A. (Andrew), Myronov, Maksym, Kobayashi, Masaharu, Geypen, Jef, Bender, Hugo, Vincent, B. (Benjamin), Krom, Raymond et al.
(2011)
High hole mobility in 65 nm strained Ge p-Channel field effect transistors with HfO2Gate dielectric.
Japanese Journal of Applied Physics, Vol.50
(No.4).
article no. 04DC17.
doi:10.1143/JJAP.50.04DC17
ISSN 0021-4922.
Slovak Research and Development Agency (SRDA)
Mironov, O. A., Hassan, A. H. A., Morris, R. J. H. (Richard J. H.), Dobbie, A. (Andrew), Uhlarz, M., Chrastina, Daniel, Hague, J. P., Kiatgamolchai, S., Beanland, R., Gabani, S., Berkutov, I. B., Helm, Manfred, Drachenko, O., Myronov, Maksym and Leadley, D. R. (David R.) (2014) Ultra high hole mobilities in a pure strained Ge quantum well. Thin Solid Films, Volume 557 . pp. 329-333. doi:10.1016/j.tsf.2013.10.118 ISSN 0040-6090.
Slovakia
Mironov, O. A., Hassan, A. H. A., Morris, R. J. H. (Richard J. H.), Dobbie, A. (Andrew), Uhlarz, M., Chrastina, Daniel, Hague, J. P., Kiatgamolchai, S., Beanland, R., Gabani, S., Berkutov, I. B., Helm, Manfred, Drachenko, O., Myronov, Maksym and Leadley, D. R. (David R.) (2014) Ultra high hole mobilities in a pure strained Ge quantum well. Thin Solid Films, Volume 557 . pp. 329-333. doi:10.1016/j.tsf.2013.10.118 ISSN 0040-6090.
United States. Department of Energy. Office of Basic Energy Sciences (OBES)
Burrows, Christopher W., Dobbie, A. (Andrew), Myronov, Maksym, Hase, Thomas P. A., Wilkins, Stuart B., Walker, Marc, Mudd, James J., Maskery, Ian, Lees, Martin R., McConville, C. F. (Chris F.), Leadley, D. R. (David R.) and Bell, Gavin R. (2013) Heteroepitaxial growth of ferromagnetic MnSb(0001) films on Ge/Si(111) virtual substrates. Crystal Growth & Design, Volume 13 (Number 11). pp. 4923-4929. doi:10.1021/cg4011136 ISSN 1528-7483.
This list was generated on Thu Apr 25 02:36:51 2024 BST.