2018

Linhart, Wojciech W.M., Rajpalke, Mohana M.K., Birkett, Max, Walker, David, Ashwin, M. J. and Veal, T. D. (2018) Nitrogen pair-induced temperature insensitivity of the band gap of GaNSb alloys. Journal of Physics D: Applied Physics, 52 (4). 045105. doi:10.1088/1361-6463/aaeec9 ISSN 0022-3727.

Mousley, Philip, Burrows, Christopher W., Ashwin, M. J., Sánchez, Ana M., Lazarov, V. K. and Bell, Gavin R. (2018) Growth and characterisation of MnSb (0001) / InGaAs (111) A epitaxial films. Journal of Crystal Growth, 498 . pp. 391-398. doi:10.1016/j.jcrysgro.2018.07.006 ISSN 0022-0248.

Mousley, Philip, Burrows, Christopher W., Ashwin, M. J., Sánchez, Ana M., Lazarov, V. K. and Bell, Gavin R. (2018) Data for Growth and characterisation of MnSb (0001) / InGaAs (111) A epitaxial films. [Dataset]

2017

Linhart, Wojciech M., Gladysiewicz, Marta, Kopaczek, Jan, Rajpalke, Mohana, Ashwin, M. J., Veal, Timothy David and Kudrawiec, Robert (2017) Indium-incorporation enhancement of photoluminescence properties of Ga(In)SbBi alloys. Journal of Physics D: Applied Physics, 50 (37). 375102. doi:10.1088/1361-6463/aa7e64 ISSN 0022-3727.

Segercrantz, N., Slotte, J., Makkonen, I., Tuomisto, F., Sandall, I. C., Ashwin, M. J. and Veal, T. D. (Tim D.) (2017) Hole density and acceptor-type defects in MBE-grown GaSb1-x Bi x. Journal of Physics D: Applied Physics, 50 (29). 295102. doi:10.1088/1361-6463/aa779a ISSN 0022-3727.

Burrows, Christopher W., Hase, Thomas P. A., Ashwin, M. J., Mousley, Philip and Bell, Gavin R. (2017) Depth sensitive X-ray diffraction as a probe of buried half-metallic inclusions. Physica Status Solidi. B: Basic Research, 254 (2). doi:10.1002/pssb.201600543 ISSN 0370-1972.

2016

Linhart, W. M., Rajpalke, M. K., Buckeridge, John, Murgatroyd, P. A. E., Bomphrey, John James, Alaria, J., Catlow, C. R. A., Scanlon, D. O., Ashwin, M. J. and Veal, T. D. (Tim D.) (2016) Band gap reduction in InNxSb1-x alloys : optical absorption, k · P modeling, and density functional theory. Applied Physics Letters, 109 (13). 132104. doi:10.1063/1.4963836 ISSN 0003-6951.

2015

Rajpalke, Mohana K., Linhart, W. M., Yu, K. M., Jones, T. S. (Tim S.), Ashwin, M. J. and Veal, T. D. (Tim D.) (2015) Bi flux-dependent MBE growth of GaSbBi alloys. Journal of Crystal Growth, 425 . pp. 241-244. doi:10.1016/j.jcrysgro.2015.02.093 ISSN 0022-0248.

Segercrantz, Natalie, Makkonen, Ilja, Slotte, Jonatan, Kujala, Jan, Veal, T. D. (Tim D.), Ashwin, M. J. and Tuomisto, Filip (2015) Increased p-type conductivity in GaNxSb1−x, experimental and theoretical aspects. Journal of Applied Physics, 118 (8). pp. 1-9. 085708. doi:10.1063/1.4929751 ISSN 0021-8979.

Bomphrey, John James, Ashwin, M. J. and Jones, T. S. (Tim S.) (2015) The formation of high number density InSb quantum dots, resulting from direct InSb/GaSb (001) heteroepitaxy. Journal of Crystal Growth, 420 . pp. 1-5. doi:10.1016/j.jcrysgro.2015.03.025 ISSN 0022-0248.

Bomphrey, John James, Ashwin, M. J., Jones, T. S. (Tim S.) and Bell, Gavin R. (2015) The c(4×4)–a(1×3) surface reconstruction transition on InSb(001) : static versus dynamic conditions. Results in physics, Volume 5 . pp. 154-155. doi:10.1016/j.rinp.2015.05.004 ISSN 2211-3797.

2014

Rajpalke, Mohana K., Linhart, W. M., Yu, K. M., Birkett, Michael Alexander, Alaria, Jonathan, Bomphrey, John James, Sallis, S., Piper, L. F. J., Jones, T. S. (Tim S.), Ashwin, M. J. and Veal, T. D. (Tim D.) (2014) Bi-induced band gap reduction in epitaxial InSbBi alloys. Applied Physics Letters, Volume 105 (Number 21). Article number 212101. doi:10.1063/1.4902442 ISSN 0003-6951.

Kopaczek, Jan, Kudrawiec, Robert, Linhart, Wojciech, Rajpalke, Mohana K., Jones, T. S. (Tim S.), Ashwin, M. J. and Veal, Tim (2014) Low- and high-energy photoluminescence from GaSb1−xBixwith 0 <x≤ 0.042. Applied Physics Express, Volume 7 (Number 11). Article number 111202. doi:10.7567/APEX.7.111202 ISSN 1882-0778.

Bell, Gavin R., Burrows, Christopher W., Hase, Thomas P. A., Ashwin, M. J., McMitchell, Sean R. C., Sanchez, Ana M. and Aldous, James D. (2014) Epitaxial growth of cubic MnSb on GaAs AND InGaAs(111). SPIN, 4 (4). pp. 1-8. 1440025. doi:10.1142/S2010324714400256 ISSN 2010-3247.

Kopaczek, Jan, Rajpalke, Mohana K., Linhart, W. M., Jones, T. S. (Tim S.), Ashwin, M. J., Kudrawiec, R. and Veal, T. D. (2014) Photoreflectance spectroscopy of GaInSbBi and AlGaSbBi quaternary alloys. Applied Physics Letters, Volume 105 (Number 11). p. 112102. doi:10.1063/1.4895930 ISSN 0003-6951.

Kopaczek, J., Rajpalke, Mohana K., Linhart, W. M., Jones, T. S. (Tim S.), Ashwin, M. J., Kudrawiec, R. and Veal, T. D. (Tim D.) (2014) Photoreflectance spectroscopy of GaInSbBi and AlGaSbBi quaternary alloys. Applied Physics Letters, Volume 105 (Number 11). Article number 112102. doi:10.1063/1.4895930 ISSN 0003-6951.

Polak, M. P., Scharoch, P., Kudrawiec, R., Kopaczek, J., Winiarski, M. J., Linhart, M., Rajpalke, Mohana K., Yu, K. M., Jones, T. S. (Tim S.), Ashwin, M. J. and Veal, T. D. (Tim D.) (2014) Theoretical and experimental studies of electronic band structure for GaSb1−xBix in the dilute Bi regime. Journal of Physics D : Applied Physics, Volume 47 (Number 35). Article number 355107. doi:10.1088/0022-3727/47/35/355107 ISSN 0022-3727.

Rajpalke, Mohana K., Linhart, W. M., Birkett, Michael Alexander, Yu, K. M., Alaria, Jonathan, Kopaczek, Jan, Kudrawiec, Robert, Jones, T. S. (Tim S.), Ashwin, M. J. and Veal, T. D. (Tim D.) (2014) High Bi content GaSbBi alloys. Journal of Applied Physics, Volume 116 (Number 4). 043511. doi:10.1063/1.4891217 ISSN 0021-8979.

Buckeridge, John, Scanlon, David O., Veal, T. D. (Tim D.), Ashwin, M. J., Walsh, Aron and Catlow, C. R. A. (2014) N incorporation and associated localized vibrational modes in GaSb. Physical Review B (Condensed Matter and Materials Physics), 89 (1). pp. 1-9. 014107 . doi:10.1103/PhysRevB.89.014107 ISSN 1098-0121.

2013

Rajpalke, Mohana K., Linhart, W. M., Birkett, Michael Alexander, Yu, K. M., Scanlon, David O., Buckeridge, John, Jones, T. S. (Tim S.), Ashwin, M. J. and Veal, T. D. (Tim D.) (2013) Growth and properties of GaSbBi alloys. Applied Physics Letters, Volume 103 (Number 14). 142106. doi:10.1063/1.4824077 ISSN 0003-6951.

Ashwin, M. J., Morris, R. J. H., Walker, David, Thomas, Pam A., Dowsett, M. G., Jones, T. S. and Veal, T. D. (2013) Molecular-beam epitaxy and lattice parameter of GaNxSb1−x : deviation from Vegard's law for x>0.02. Journal of Physics D: Applied Physics, Volume 46 (Number 26). Article number 264003. doi:10.1088/0022-3727/46/26/264003 ISSN 0022-3727.

Ashwin, M. J., Walker, David, Thomas, Pam A., Jones, T. S. and Veal, T. D. (2013) N incorporation in GaInNSb alloys and lattice matching to GaSb. Journal of Applied Physics, Volume 113 (Number 3). Article number 033502. doi:10.1063/1.4775745 ISSN 0021-8979.

Mudd, James J., Kybert, Nicholas J., Linhart, W. M., Buckle, L., Ashley, Tim, King, P. D. C., Jones, T. S. (Tim S.), Ashwin, M. J. and Veal, T. D. (Tim D.) (2013) Optical absorption by dilute GaNSb alloys : influence of N pair states. Applied Physics Letters, Volume 103 (Number 4). Article number 042110. doi:10.1063/1.4816519 ISSN 0003-6951.

Kopaczek, J., Kudrawiec, R., Linhart, W. M., Rajpalke, Mohana K., Yu, K. M., Jones, T. S. (Tim S.), Ashwin, M. J., Misiewicz, J. and Veal, T. D. (Tim D.) (2013) Temperature dependence of the band gap of GaSb1−xBix alloys with 0 < x ≤ 0.042 determined by photoreflectance. Applied Physics Letters, Volume 103 (Number 26). Article number 261907. doi:10.1063/1.4858967 ISSN 0003-6951.