The Library
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Number of items: 8.
Advantage West Midlands
Alatise, Olayiwola M., Parker-Allotey, Nii-Adotei, Hamilton, Dean P. and Mawby, P. A. (Philip A.) (2012) The impact of parasitic inductance on the performance of silicon-carbide Schottky barrier diodes. IEEE Transactions on Power Electronics, Vol.27 (No.8). pp. 3826-3833. doi:10.1109/TPEL.2012.2183390 ISSN 0885-8993.
Advantage West Midlands (AWM)
Alatise, Olayiwola M., Parker-Allotey, Nii-Adotei, Jennings, M. R., Mawby, P. A. (Philip A.), Kennedy, Ian and Petkos, George (2011) Modeling the impact of the trench depth on the gate-drain capacitance in power MOSFETs. IEEE Electron Device Letters, Vol.32 (No.9). pp. 1269-1271. doi:10.1109/LED.2011.2159476 ISSN 0741-3106.
Alatise, Olayiwola M., Parker-Allotey, Nii-Adotei, Jennings, M. R., Mawby, P. A. (Philip A.), Kennedy, Ian and Petkos, George (2011) Trench depth optimization for energy efficient discrete power trench MOSFETs. In: The 41st European Solid State Device Research Conference (ESSDERC), Finlandia Hall, Helsinki, Finland, Sep 12-16, 2011. Published in: Solid-State Device Research Conference (ESSDERC), 2011 Proceedings of the European pp. 291-294. doi:10.1109/ESSDERC.2011.6044177 ISSN 1930-8876.
Advantage West Midlands (AWM)
Parker-Allotey, Nii-Adotei, Alatise, Olayiwola M., Hamilton, Dean P., Jennings, M. R., Mawby, P. A. (Philip A.), Nash, Robert Alastair and Magill, Rob (2011) Conduction and switching loss comparison between an IGBT/Si-PiN diode pair and an IGBT/SiC-Schottky diode pair. In: IEEE Innovative Smart Grid Technologies Conference (ISGT) , Manchester Central Convention Complex, Manchester, United Kingdom, Dec 5-7, 2011. Published in: Innovative Smart Grid Technologies (ISGT Europe), 2011 2nd IEEE PES International Conference and Exhibition on pp. 1-6. doi:10.1109/ISGTEurope.2011.6162688 ISSN 2165-4816.
Birmingham Science City
Alatise, Olayiwola M., Parker-Allotey, Nii-Adotei, Jennings, M. R., Mawby, P. A. (Philip A.), Kennedy, Ian and Petkos, George (2011) Modeling the impact of the trench depth on the gate-drain capacitance in power MOSFETs. IEEE Electron Device Letters, Vol.32 (No.9). pp. 1269-1271. doi:10.1109/LED.2011.2159476 ISSN 0741-3106.
European Regional Development Fund (ERDF)
Alatise, Olayiwola M., Parker-Allotey, Nii-Adotei, Hamilton, Dean P. and Mawby, P. A. (Philip A.) (2012) The impact of parasitic inductance on the performance of silicon-carbide Schottky barrier diodes. IEEE Transactions on Power Electronics, Vol.27 (No.8). pp. 3826-3833. doi:10.1109/TPEL.2012.2183390 ISSN 0885-8993.
Parker-Allotey, Nii-Adotei, Alatise, Olayiwola M., Hamilton, Dean P., Jennings, M. R., Mawby, P. A. (Philip A.), Nash, Robert Alastair and Magill, Rob (2011) Conduction and switching loss comparison between an IGBT/Si-PiN diode pair and an IGBT/SiC-Schottky diode pair. In: IEEE Innovative Smart Grid Technologies Conference (ISGT) , Manchester Central Convention Complex, Manchester, United Kingdom, Dec 5-7, 2011. Published in: Innovative Smart Grid Technologies (ISGT Europe), 2011 2nd IEEE PES International Conference and Exhibition on pp. 1-6. doi:10.1109/ISGTEurope.2011.6162688 ISSN 2165-4816.
Warwick-Birmingham Science City Alliance Initiative
Alatise, Olayiwola M., Parker-Allotey, Nii-Adotei, Hamilton, Dean P. and Mawby, P. A. (Philip A.) (2012) The impact of parasitic inductance on the performance of silicon-carbide Schottky barrier diodes. IEEE Transactions on Power Electronics, Vol.27 (No.8). pp. 3826-3833. doi:10.1109/TPEL.2012.2183390 ISSN 0885-8993.
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