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Number of items: 79.
2023
Renz, Arne Benjamin, Dai, Tianxiang, Antoniou, Marina, Cao, Qinze, Melnyk, Kyrylo, Tian, Xinkai, Stokeley, Katarzyna, Newton, Andrew, Shah, Vishal, Vavasour, Oliver J. and Gammon, P. M. (2023) The optimisation, fabrication and comparison of 10 kV-rated 4H-SiC IGBTs and MOSFETs. In: 2023 IEEE Energy Conversion Congress and Exposition (ECCE), Nashville, TN, USA, 29 Oct - 02 Nov 2023. Published in: 2023 IEEE Energy Conversion Congress and Exposition (ECCE) doi:10.1109/ecce53617.2023.10362455
2022
Renz, A. B., Vavasour, Oliver J., PΓ©rez-TomΓ‘s, Amador, Cao, Qin Ze, Shah, Vishal, Bonyadi, Yeganeh, Pathirana, Vasantha, Trajkovic, Tanya, Baker, G. W. C., Mawby, Philip A. and Gammon, Peter M. (2022) Engineering the Schottky interface of 3.3 kV SiC JBS diodes using a P2O5 surface passivation treatment. Materials Science Forum, 1062 . pp. 190-194. doi:10.4028/p-97jy4p ISSN 1662-9752.
Zhang, L., Dai, Tianxiang, Gammon, Peter M., Lophitis, Neophytos , Udrea, Florin, Tiwari, Amit, Gonzalez, Jose Ortiz, Renz, A. B., Shah, Vishal, Mawby, Philip A. and Antoniou, Marina (2022) Investigations of short circuit robustness of SiC IGBTs with considerations on physics properties and design. Materials Science Forum, 1062 . pp. 504-508. doi:10.4028/p-13z22g ISSN 1662-9752.
Renz, A. B., Vavasour, Oliver J., Gammon, Peter M., Li, Fan, Dai, Tianxiang, Baker, G. W. C., Grant, Nicholas E., Murphy, John D., Mawby, Philip A. and Shah, Vishal (2022) The improved reliability performance of post-deposition annealed ALD-SiO2. Materials Science Forum, 1062 . pp. 325-329. doi:10.4028/p-b76y6c ISSN 1662-9752.
Baker, G. W. C., Li, Fan, Dai, Tianxiang, Renz, A. B., Zhang, L., Qi, Yunyi, Shah, Vishal, Mawby, Philip A., Antoniou, Marina and Gammon, Peter M. (2022) A study of 4H-SiC semi-superjunction rectifiers for practical realisation. Materials Science Forum, 1062 . pp. 514-518. doi:10.4028/p-cxd7z3 ISSN 1662-9752.
Renz, A. B., Vavasour, Oliver J., Rommel, Mathias, Baker, G. W. C., Gammon, Peter M., Dai, Tianxiang, Li, Fan, Antoniou, Marina, Mawby, Philip A. and Shah, Vishal (2022) A study of high resistivity semi-insulating 4H-SiC epilayers formed via the implantation of Germanium and Vanadium. Materials Science Forum, 1062 . pp. 523-527. doi:10.4028/p-92w3k6 ISSN 1662-9752.
Baker, G. W. C., Gammon, P. M., Renz, A. B., Vavasour, O., Chan, C. W., Qi, Y., Dai, T., Li, F., Zhang, L., Kotagama, V., Shah, V. A., Mawby, P. A. (Philip A.) and Antoniou, M. (2022) Optimization of 1700-V 4H-SiC semi-superjunction Schottky rectifiers with implanted P-pillars for practical realization. IEEE Transactions on Electron Devices, 69 (4). pp. 1924-1930. doi:10.1109/TED.2022.3152460 ISSN 0018-9383.
Lioliou, G., Renz, A. B., Shah, V. A., Gammon, P. M. and Barnett, A. M. (2022) Mo/4H-SiC Schottky diodes for room temperature X-ray and Ξ³-ray spectroscopy. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1027 . 166330. doi:10.1016/j.nima.2022.166330 ISSN 0168-9002.
Renz, A. B., Shah, Vishal, Vavasour, Oliver J., Baker, Guy, Bonyadi, Yegi, Sharma, Yogesh K., Pathirana, Vasantha, Trajkovic, Tanya, Mawby, Philip. A., Antoniou, Marina and Gammon, Peter M. (2022) The optimization of 3.3 kV 4H-SiC JBS diodes. IEEE Transactions on Electron Devices, 69 (1). pp. 298-303. doi:10.1109/ted.2021.3129705 ISSN 1557-9646.
Renz, Arne Benjamin, Vavasour, Oliver J., Gammon, Peter M., Li, Fan, Dai, Tianxiang, Baker, Guy, Grant, Nicholas E., Murphy, John D., Mawby, P. A. (Philip A.), Shah, Vishal and Gott, James A. (2022) (Invited, Digital Presentation) Improved reliability of 4H-SiC metal-oxide-semiconductor devices utilising atomic layer deposited layers with enhanced interface quality. ECS Transactions, 108 (2). pp. 43-49. doi:10.1149/10802.0043ecst ISSN 1938-5862.
Field, Daniel E., Pomeroy, James W., Gity, Farzan, Schmidt, Michael, Torchia, Pasqualino, Li, Fan, Gammon, Peter M., Shah, Vishal and Kuball, Martin (2022) Thermal characterization of direct wafer bonded Si-on-SiC. Applied Physics Letters, 120 (11). 113503. doi:10.1063/5.0080668 ISSN 0003-6951.
2021
Colston, Gerard B., Newell, Oliver, Rhead, Stephen D., Shah, V. A. and Myronov, Maksym (2021) Strain mapping of silicon carbon suspended membranes. Materials & Design, 211 . 110135. doi:10.1016/j.matdes.2021.110135 ISSN 0264-1275.
Baker, G. W. C., Chan, C., Renz, A. B., Qi, Yunyi, Dai, Tianxiang, Li, Fan, Shah, V. A., Mawby, P. A. (Philip A.), Antoniou, Marina and Gammon, P. M. (2021) Optimization of 1700-V 4H-SiC superjunction Schottky rectifiers with implanted p-pillars for practical realization. IEEE Transactions on Electron Devices, 68 (7). 3497 -3504. doi:10.1109/TED.2021.3083241 ISSN 0018-9383.
Renz, A. B., Li, F., Vavasour, Oliver J., Gammon, P. M., Dai, T., Baker, G. W. C., Via, F. La, Zielinski, M. (Marcin), Zhang, L., Grant, Nicholas E., Murphy, John D., Mawby, P. A. (Philip A.), Jennings, M. R. (Michael R.) and Shah, V. A. (2021) Initial investigations into the MOS interface of freestanding 3C-SiC layers for device applications. Semiconductor Science and Technology, 36 (5). 055006. doi:10.1088/1361-6641/abefa1 ISSN 1361-6641.
Dai, Tianxiang, Zhang, L., Vavasour, Oliver J., Renz, A. B., Shah, V. A., Antoniou, M., Mawby, P. A. (Philip A.) and Gammon, P. M. (2021) A compact trench-assisted space-modulated JTE design for high-voltage 4H-SiC devices. IEEE Transactions on Electron Devices, 68 (3). pp. 1162-1167. doi:10.1109/TED.2020.3047348 ISSN 0018-9383.
Renz, A. B., Vavasour, Oliver J., Gammon, P. M., Li, Fan, Dai, Tianxiang, Antoniou, M., Baker, G. W. C., Bashar, E., Grant, N. E, Murphy, J. D., Mawby, P. A. and Shah, V. A. (2021) The improvement of atomic layer deposited SiO2/4H-SiC interfaces via a high temperature forming gas anneal. Materials Science in Semiconductor Processing, 122 . 105527. doi:10.1016/j.mssp.2020.105527 ISSN 1369-8001.
2020
Zhou, Leiqing, Colston, Gerard B., Myronov, Maksym, Leadley, D. R. (David R.), Trushkevych, Oksana, Shah, V. A. and Edwards, R. S. (Rachel S.) (2020) Ultrasonic inspection and self-healing of Ge and 3C-SiC semiconductor membranes. Journal of Microelectromechanical Systems, 29 (3). pp. 370-377. doi:10.1109/JMEMS.2020.2981909 ISSN 1057-7157.
Renz, A. B., Shah, V. A., Vavasour, Oliver J., Bonyadi, Yeganeh, Li, Fan, Dai, Tianxiang, Baker, G. W. C., Hindmarsh, Steven A., Han, Yan, Walker, Marc, Sharma, Y., Liu, Y., Raghothamachar, B., Dudley, M., Mawby, P. A. (Philip A.) and Gammon, P. M. (2020) The improvement of Mo/4H-SiC Schottky diodes via a P2O5 surface passivation treatment. Journal of Applied Physics, 127 (2). 025704. doi:10.1063/1.5133739 ISSN 0021-8979.
2019
Murphy, John D., Pointon, A. I., Grant, Nicholas E., Shah, V. A., Myronov, Maksym, Voronkov, Vladimir V. and Falster, R. J. (2019) Minority carrier lifetime in indium doped silicon for photovoltaics. Progress in Photovoltaics : Research and Applications, 27 (10). pp. 844-855. doi:10.1002/pip.3172 ISSN 1099-159X.
Murphy, John D., Pointon, A. I., Grant , Nicholas E., Shah, V. A., Myronov, Maksym, Voronkov, Vladimir V. and Falster, R. J. (2019) Data for Minority carrier lifetime in indium doped silicon for photovoltaics. [Dataset]
2017
Woodend, Lee, Gammon, P. M., Shah, Vishal, PΓ©rez-TomΓ‘s, Amador, Li, Fan, Hamilton, Dean P., Myronov, Maksym and Mawby, P. A. (Philip A.) (2017) Cryogenic characterisation and modelling of commercial SiC MOSFETs. Materials Science Forum, 897 . pp. 557-560. doi:10.4028/www.scientific.net/MSF.897.557 ISSN 1662-9752.
2016
Colston, Gerard B., Rhead, Stephen, Shah, V. A., Newell, Oliver, Dolbnya, Igor P., Leadley, David R. and Myronov, Maksym (2016) Mapping the strain and tilt of a suspended 3C-SiC membrane through micro X-ray diffraction. Materials & Design, 103 . pp. 244-248. doi:10.1016/j.matdes.2016.04.078 ISSN 0264-1275.
Bonyadi, Yeganeh, Gammon, P. M., Bonyadi, Roozbeh, Shah, V. A., Fisher, C. A., Martin, David M. and Mawby, Philip A. (2016) Characterization of 4H-SiC PiN diodes formed on defects identified by PL imaging. Materials Science Forum, 858 . pp. 405-409. doi:10.4028/www.scientific.net/msf.858.405 ISSN 1662-9752.
Li, Fan, Sharma, Yogesh K., Jennings, M. R., PΓ©rez-TomΓ‘s, Amador, Shah, V. A., Rong, Hua, Russell, Stephen, Martin, David and Mawby, P. A. (Philip A.) (2016) Improved channel mobility by oxide nitridation for N-Channel MOSFET on 3C-SiC(100)/Si. Materials Science Forum, 858 . pp. 667-670. doi:10.4028/www.scientific.net/MSF.858.667 ISSN 1662-9752.
2015
Gunnarsson, David, Richardson-Bullock, J. S., Prest, M. J. (Martin J.), Nguyen, H. Q., Timofeev , A. V., Shah, V. A., Whall, Terry E., Parker, Evan H. C., Leadley, D. R. (David R.), Myronov, Maksym and Prunnila, Mika (2015) Interfacial engineering of semiconductorβsuperconductor junctions for high performance micro-coolers. Scientific Reports, 5 . 17398 . doi:10.1038/srep17398 ISSN 2045-2322.
Li, Fan, Sharma, Yogesh K., Shah, V. A., Jennings, M. R., PΓ©rez-TomΓ‘s, Amador, Myronov, Maksym, Fisher, Craig A., Leadley, D. R. (David R.) and Mawby, P. A. (Philip A.) (2015) Electrical activation of nitrogen heavily implanted 3C-SiC(100). Applied surface science, 353 . pp. 958-963. doi:10.1016/j.apsusc.2015.06.169 ISSN 0169-4332.
Chen, Han, Gammon, P. M., Shah, V. A., Fisher, Craig A., Chan, Chun Wa, Jahdi, Saeed, Hamilton, Dean P., Jennings, M. R., Myronov, Maksym, Leadley, D. R. (David R.) and Mawby, P. A. (Philip A.) (2015) Cryogenic characterization of commercial SiC Power MOSFETs. In: Silicon Carbide and Related Materials 2014, Grenoble, France, Sep 2014. Published in: Materials Science Forum, 821-823 pp. 777-780. doi:10.4028/www.scientific.net/MSF.821-823.777 ISSN 1662-9752.
Shah, V. A., Rhead, Stephen, Finch, June, Myronov, Maksym, Reparaz, J. S., Morris, R. J. H. (Richard J. H.), Wilson, Neil R., Kachkanov, V. , Dolbnya, I. P., Halpin, John E., Patchett, D. , Allred, Phil, Colston, Gerard B., Sawhney, K. J. S., Sotomayor Torres, C. M. and Leadley, D. R. (David R.) (2015) Electrical properties and strain distribution of Ge suspended structures. Solid-State Electronics, 108 . pp. 13-18. doi:10.1016/j.sse.2014.12.004 ISSN 0038-1101.
Colston, Gerard B., Myronov, Maksym, Rhead, Stephen, Shah, V. A., Sharma, Yogesh K., Mawby, P. A. (Philip A.) and Leadley, D. R. (David R.) (2015) Si1-xCx/Si(001) heterostructures for use in Schottky diode rectifiers demonstrating high breakdown voltage and negligible leakage current. Materials Science Forum, 821-823 . pp. 571-574. doi:10.4028/www.scientific.net/MSF.821-823.571 ISSN 1662-9752.
Chan, Chun Wa, Gammon, P. M., Shah, V. A., Chen, Han, Jennings, M. R., Fisher, Craig A., PΓ©rez-TomΓ‘s, Amador, Myronov, Maksym and Mawby, P. A. (Philip A.) (2015) Simulations of a lateral PiN diode on SiSiC substrate for high temperature applications. Materials Research Forum, 821 (7). pp. 624-627. doi:10.4028/www.scientific.net/MSF.821-823.624
Richardson-Bullock, J. S., Prest, M. J. (Martin J.), Shah, V. A., Gunnarsson, David, Prunnila, Mika, Dobbie, A. (Andrew), Myronov, Maksym, Morris, R. J. H. (Richard J. H.), Whall, Terry E., Parker, Evan H. C. and Leadley, D. R. (David R.) (2015) Comparison of electronβphonon and holeβphonon energy loss rates in silicon. Solid-State Electronics, Volume 103 . pp. 40-43. doi:10.1016/j.sse.2014.09.002 ISSN 0038-1101.
Prest, M. J. (Martin J.), Richardson-Bullock, J. S., Zhao, Q. T., Muhonen, J. T., Gunnarsson, David, Prunnila, Mika, Shah, V. A., Whall, Terry E., Parker, Evan H. C. and Leadley, D. R. (David R.) (2015) Superconducting platinum silicide for electron cooling in silicon. Solid-State Electronics, Volume 103 . pp. 15-18. doi:10.1016/j.sse.2014.09.003 ISSN 0038-1101.
2014
Shah, V. A., Myronov, Maksym, Rhead, S., Halpin, John E., Shchepetov, A., Prest, M. J. (Martin J.), Prunnila, Mika, Whall, Terry E., Parker, Evan H. C. and Leadley, D. R. (David R.) (2014) Flat single crystal Ge membranes for sensors and opto-electronic integrated circuitry. Solid-State Electronics, Volume 98 . pp. 93-98. doi:10.1016/j.sse.2014.04.015 ISSN 0038-1101.
Rhead, S., Halpin, John E., Shah, V. A., Myronov, Maksym, Patchett, D. H., Allred, Phil, Kachkanov, V., Dolbnya, I. P., Reparaz, J. S., Wilson, Neil R., Sotomayor Torres, C. M. and Leadley, D. R. (David R.) (2014) Tensile strain mapping in flat germanium membranes. Applied Physics Letters, Volume 104 (Number 17). Article number 172107. doi:10.1063/1.4874836 ISSN 0003-6951.
Leadley, D. R. (David R.), Prest, M. J. (Martin J.), Ahopelto, Jouni, Brien, Tom, Gunnarsson, David, Mauskopf, Phil, Muhonen, Juha, Myronov, Maksym, Nguyen, Hung, Parker, Evan H. C., Prunnila, Mika, Richardson-Bullock, J. S., Shah, V. A., Whall, Terry E. and Zhao, Q. T. (2014) Silicon-based cooling elements. In: Balestra, Francis, (ed.) Beyond CMOS Nanodevices. Nanoscience and Nanotechnology Series, Volume 1 . Wiley-ISTE, pp. 303-330. ISBN 9781848216549
Leadley, D. R. (David R.), Shah, V. A., Ahopelto, Jouni, Alzina, Francesc, ChΓ‘vez-Γngel, Emigdio, Muhonen, Juha, Myronov, Maksym, Nassiopoulou, Androula G., Nguyen, Hung, Parker, E. H. C., Pekola, Jukka, Prest, M. J., Prunnila, Mika, Reparaz, Juan Sebastian, Shchepetov, Andrey, Sotomayor-Torres, Clivia, Valalaki, Katerina and Whall, Terry E. (2014) Thermal isolation through nanostructuring. In: Balestra, Francis, (ed.) Beyond-CMOS Nanodevices. Nanoscience and Nanotechnology Series, Volume 1 . Wiley-ISTE, pp. 331-363. ISBN 9781848216549
Shah, V. A., Rhead, S., Halpin, John E., Trushkevych, Oksana, ChΓ‘vez-Γngel, E., Shchepetov, A., Kachkanov, V., Wilson, Neil R., Myronov, Maksym, Reparaz, J. S. et al.
(2014)
High quality single crystal Ge nano-membranes for opto-electronic integrated circuitry.
Journal of Applied Physics, Volume 115
(Number 14).
Article number 144307.
doi:10.1063/1.4870807
ISSN 0021-8979.
Trushkevych, Oksana, Shah, V. A., Myronov, Maksym, Halpin, John E., Rhead, S., Prest, M. J. (Martin J.), Leadley, D. R. (David R.) and Edwards, R. S. (Rachel Sian) (2014) Laser-vibrometric ultrasonic characterization of resonant modes and quality factors of Ge membranes. Science and Technology of Advanced Materials, Volume 15 (Number 2). Article number 025004. doi:10.1088/1468-6996/15/2/025004 ISSN 1468-6996.
Wongwanitwattana, Chalermwat, Shah, V. A., Myronov, Maksym, Parker, Evan H. C., Whall, Terry E. and Leadley, D. R. (David R.) (2014) Precision plasma etching of Si, Ge, and Ge:P by SF6 with added O2. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Volume 32 (Number 3). Article number 031302. doi:10.1116/1.4868615 ISSN 0734-2101.
Myronov, Maksym, Morrison, Christopher, Halpin, John E., Rhead, S., Casteleiro, Catarina, Foronda, Jamie, Shah, V. A. and Leadley, D. R. (David R.) (2014) An extremely high room temperature mobility of two-dimensional holes in a strained Ge quantum well heterostructure grown by reduced pressure chemical vapor deposition. Japanese Journal of Applied Physics, Volume 53 (Number 4S). Article number 04EH02. doi:10.7567/JJAP.53.04EH02 ISSN 0021-4922.
Gammon, P. M., Fisher, Craig A., Shah, V. A., Jennings, M. R., PΓ©rez-TomΓ‘s, Amador, Burrows, S. E. (Susan E.), Myronov, Maksym, Leadley, D. R. (David R.) and Mawby, P. A. (Philip A.) (2014) The cryogenic testing and characterisation of SiC diodes. Materials Science Forum, 778-780 . pp. 863-866. doi:10.4028/www.scientific.net/MSF.778-780.863 ISSN 1662-9752.
Shah, V. A., Trushkevych, Oksana, Myronov, Maksym, Rhead, Stephen, Halpin, John E., Edwards, R. S. (Rachel Sian) and Leadley, D. R. (David R.) (2014) Tensile strained Ge membranes. In: 15th International Conference on Ultimate Integration on Silicon (ULIS), 2014 , Stockholm, Sweden, 7-9 April 2014. Published in: International Conference on Ultimate Integration on Silicon pp. 137-140. doi:10.1109/ULIS.2014.6813917 ISSN 2330-5738.
2013
Gammon, P. M., PΓ©rez-TomΓ‘s, Amador, Shah, V. A., Vavasour, O., Donchev, E., Pang, J. S., Myronov, Maksym, Fisher, Craig A., Jennings, M. R., Leadley, D. R. (David R.) and Mawby, P. A. (Philip A.) (2013) Modelling the inhomogeneous SiC Schottky interface. Journal of Applied Physics, Volume 114 (Number 22). Article number 223704. doi:10.1063/1.4842096 ISSN 0021-8979.
Shah, V. A., Myronov, Maksym, Dobbie, A. (Andrew) and Leadley, D. R. (David R.) (2013) Introduction of terraces into a reverse linearly graded SiGe buffer on Si(001) substrate and their effect on the buffer's structural properties. ECS Journal of Solid State Science and Technology, Volume 2 (Number 3). Q40-Q44. doi:10.1149/2.018303jss ISSN 2162-8769.
Whall, Terry E., Prest, M. J. (Martin J.), Richardson-Bullock, J. S., Shah, V. A., Myronov, Maksym, Parker, Evan H. C., Leadley, D. R. (David R.), Prunnila, Mika, Gunnarsson, David, Brien, T., Mozonov, D. and Mauskopf, P. (2013) Cooltronics : a new low-temperature tunneling-technology based on Silicon. In: ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Coventry, UK, 19-21 March 2013. Published in: 14th International Conference on Ultimate Integration on Silicon pp. 1-4. ISBN 9781467348003. doi:10.1109/ULIS.2013.6523519
Chavez, E., Gomis-Bresco, J., Alzina, F., Reparaz, J. S., Shah, V. A., Myronov, Maksym, Leadley, D. R. (David R.) and Sotomayor Torres, C. M. (2013) Flexural mode dispersion in ultra-thin Ge membranes. In: ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Coventry, UK, 19-21 March 2013. Published in: 14th International Conference on Ultimate Integration on Silicon pp. 185-188. ISBN 9781467348003. doi:10.1109/ULIS.2013.6523515
Richardson-Bullock, J. S., Prest, M. J. (Martin J.), Prunnila, Mika, Gunnarsson, David, Shah, V. A., Dobbie, A. (Andrew), Myronov, Maksym, Morris, R. J. H. (Richard J. H.), Whall, Terry E., Parker, Evan H. C. and Leadley, D. R. (David R.) (2013) Hole-phonon energy loss rate in boron doped silicon. In: ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Coventry, UK, 19-21 March 2013. Published in: 14th International Conference on Ultimate Integration on Silicon pp. 213-215. ISBN 9781467348003. doi:10.1109/ULIS.2013.6523515
Gammon, P. M., PΓ©rez-TomΓ‘s, Amador, Shah, V. A., Vavasour, O., Donchev, E., Pang, J. S., Myronov, Maksym, Fisher, Craig A., Jennings, M. R., Leadley, D. R. (David R.) and Mawby, P. A. (Philip A.) (2013) Modelling the inhomogeneous SiC Schottky interface. Journal of Applied Physics, 114 (22). p. 223704. 223704. doi:10.1063/1.4842096 ISSN 0021-8979.
Shah, V. A., Myronov, Maksym, Bawden, L., Prest, M. J. (Martin J.), Richardson-Bullock, J. S., Gammon, P. M., Rhead, S., Parker, Evan H. C., Whall, Terry E. and Leadley, D. R. (David R.) (2013) Novel fabrication technique for Ge membranes. In: ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Coventry, UK, 19-21 March 2013. Published in: 14th International Conference on Ultimate Integration on Silicon pp. 181-184. ISBN 9781467348003. doi:10.1109/ULIS.2013.6523519
Hassan, A. H. A., Mironov, O. A., Feher, A., Cizmar, E., Gabani, S., Morris, R. J. H. (Richard J. H.), Dobbie, A. (Andrew), Shah, V. A., Myronov, Maksym, Berkutov, I. B., Andrievskii, V. V. and Leadley, D. R. (David R.) (2013) Pure Ge quantum well with high hole mobility. In: ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Coventry, UK, 19-21 March 2013. Published in: 14th International Conference on Ultimate Integration on Silicon (ULIS) pp. 117-120. ISBN 9781467348003. doi:10.1109/ULIS.2013.6523527
Hassan, A. H. A., Mironov, O. A., Dobbie, A. (Andrew), Morris, J. H., Halpin, John E., Shah, V. A., Myronov, Maksym, Leadley, D. R. (David R.), Gabani, S., Feher, A., Cizmar, E., Andrievskii, V. V. and Berkutov, I. B. (2013) Structural and electrical characterization of SiGe heterostructures containing a pure Ge strained quantum well. In: 2013 IEEE 33rd International Scientific Conference Electronics and Nanotechnology, ELNANO 2013, Kiev, Ukraine, 16-19 April 2013. Published in: 2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO) pp. 51-55. ISBN 9781467346696. doi:10.1109/ELNANO.2013.6552021
Casteleiro, Catarina, Halpin, John E., Shah, V. A., Myronov, Maksym and Leadley, D. R. (David R.) (2013) Thermally grown GeO2 on epitaxial Ge on Si(001) substrate. In: ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Coventry, UK, 19-21 March 2013. Published in: 14th International Conference on Ultimate Integration on Silicon pp. 169-172. ISBN 9781467348003. doi:10.1109/ULIS.2013.6523519
Prest, M. J. (Martin J.), Zhao, Q. T, Muhonen, J. T., Shah, V. A., Richardson-Bullock, J. S., Prunnila, Mika, Gunnarsson, David, Whall, Terry E., Parker, Evan H. C. and Leadley, D. R. (David R.) (2013) Using platinum silicide as a superconductor for silicon electron coolers. In: ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Coventry, UK, 19-21 March 2013. Published in: 14th International Conference on Ultimate Integration on Silicon pp. 201-204. ISBN 9781467348003. doi:10.1109/ULIS.2013.6523519
2012
Gammon, P. M., Donchev, E., PΓ©rez-TomΓ‘s, Amador, Shah, V. A., Pang, J. S., Petrov, P. K. (Peter K.), Jennings, M. R., Fisher, Craig A., Mawby, P. A. (Philip A.), Leadley, D. R. (David R.) and Alford, Neil McN. (2012) A study of temperature-related non-linearity at the metal-silicon interface. Journal of Applied Physics, Vol.112 . 114513 . doi:http://dx.doi.org/10.1063/1.4768718 ISSN 0021-8979.
Shah, V. A., Myronov, Maksym, Wongwanitwatana, Chalermwat, Bawden, Lewis, Prest, M. J. (Martin J.), Richardson-Bullock, J. S., Rhead, S., Parker, Evan H. C., Whall, Terry E. and Leadley, D. R. (David R.) (2012) Electrical isolation of dislocations in Ge layers on Si(001) substrates through CMOS-compatible suspended structures. Science and Technology of Advanced Materials, Volume 13 (Number 5). Article number 055002. doi:10.1088/1468-6996/13/5/055002 ISSN 1468-6996.
Dobbie, A. (Andrew), Myronov, Maksym, Morris, R. J. H. (Richard J. H.), Hassan, A. H. A., Prest, M. J. (Martin J.), Shah, V. A., Parker, Evan H. C., Whall, Terry E. and Leadley, D. R. (David R.) (2012) Ultra-high hole mobility exceeding one million in a strained germanium quantum well. Applied Physics Letters, Vol.101 (No.17). p. 172108. doi:10.1063/1.4763476 ISSN 0003-6951.
Shah, V. A., Dobbie, A. (Andrew), Myronov, Maksym and Leadley, D. R. (David R.) (2012) Reverse graded strain relaxed SiGe buffers for CMOS and optoelectronic integration. Thin Solid Films, Vol.520 (No.8). pp. 3227-3231. doi:10.1016/j.tsf.2011.10.102 ISSN 0040-6090.
Myronov, Maksym, Shah, V. A., Rhead, S. and Leadley, D. R. (David R.) (2012) Epitaxial growth of tensile strained SiB alloy on a Si substrate. In: 6th International Silicon-Germanium Technology and Device Meeting, ISTDM 2012, Berkeley, CA, USA, 4-6 June 2012. Published in: 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings (Article number 6222493). pp. 132-133. ISBN 9781457718625. doi:10.1109/ISTDM.2012.6222493
Dobbie, A. (Andrew), Myronov, Maksym, Morris, R. J. H. (Richard J. H.), Prest, M. J. (Martin J.), Richardson-Bullock, J. S., Hassan, A. H. A., Shah, V. A., Parker, Evan H. C., Whall, Terry E. and Leadley, D. R. (David R.) (2012) Ultra-high Hall mobility (1 x 106 cm2V-1S-1) in a two-dimensional hole gas in a strained germanium quantum well grown by reduced pressure CVD. In: 6th International Silicon-Germanium Technology and Device Meeting, ISTDM 2012, Berkeley, CA, USA, 4-6 June 2012. Published in: 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings (Article number 6222451). pp. 48-49. ISBN 9781457718625. doi:10.1109/ISTDM.2012.6222451
2011
Prest, M. J. (Martin J.), Muhonen, Juha, Prunnila, Mika, Gunnarsson, David, Shah, V. A., Richardson-Bullock, J. S., Dobbie, A. (Andrew), Myronov, Maksym, Morris, R. J. H. (Richard J. H.), Whall, Terry E., Parker, Evan H. C. and Leadley, D. R. (David R.) (2011) Strain enhanced electron cooling in a degenerately doped semiconductor. Applied Physics Letters, Vol.99 (No.25). Article: 251908. doi:10.1063/1.3670330 ISSN 0003-6951.
Shah, V. A., Dobbie, A. (Andrew), Myronov, Maksym and Leadley, D. R. (David R.) (2011) High quality relaxed Ge layers grown directly on a Si(001) substrate. Solid-State Electronics, Vol.62 (No.1). pp. 189-194. doi:10.1016/j.sse.2011.03.005 ISSN 0038-1101.
Muhonen, Juha, Prest, M. J. (Martin J.), Prunnila, Mika, Gunnarsson, David, Shah, V. A., Dobbie, A. (Andrew), Myronov, Maksym, Morris, R. J. H. (Richard J. H.), Whall, Terry E., Parker, Evan H. C. and Leadley, D. R. (David R.) (2011) Strain dependence of electron-phonon energy loss rate in many-valley semiconductors. Applied Physics Letters, Vol.98 (No.18). p. 182103. doi:10.1063/1.3579524 ISSN 0003-6951.
Shah, V. A., Dobbie, A. (Andrew), Myronov, Maksym and Leadley, D. R. (David R.) (2011) Effect of layer thickness on structural quality of Ge epilayers grown directly on Si(001). Thin Solid Films, Vol.519 (No.22). pp. 7911-7917. doi:10.1016/j.tsf.2011.06.022 ISSN 0040-6090.
2010
Shen, C., Trypiniotis, T., Lee, K. Y., Holmes, S. N., Mansell, Rhodri, Husain, Muhammad Khaled, Shah, V. A., Li, Xiaoli V., Kurebayashi, H., Farrer, I., de Groot, C. H., Leadley, D. R. (David R.), Bell, Gavin R., Parker, Evan H. C., Whall, Terry E., Ritchie, David A. and Barnes, Crispin H. W. (2010) Spin transport in germanium at room temperature. Applied Physics Letters, Vol.97 (No.16). pp. 162104-1. doi:10.1063/1.3505337 ISSN 0003-6951.
Gammon, P. M., PΓ©rez-TomΓ‘s, Amador, Jennings, M. R., Shah, V. A., Boden, S. A., Davis, M. C., Burrows, S. E., Wilson, Neil R., Roberts, G. J., Covington, James A. and Mawby, P. A. (2010) Interface characteristics of n-n and p-n Ge/SiC heterojunction diodes formed by molecular beam epitaxy deposition. Journal of Applied Physics, Vol.107 (No.12). p. 124512. doi:10.1063/1.3449057 ISSN 0021-8979.
Shah, V. A., Dobbie, A. (Andrew), Myronov, Maksym and Leadley, D. R. (David R.) (2010) Reverse graded SiGe/Ge/Si buffers for high-composition virtual substrates. Journal of Applied Physics, Vol.107 (No.6). article no. 064304. doi:10.1063/1.3311556 ISSN 0021-8979.
Gammon, P. M., PΓ©rez-TomΓ‘s, Amador, Jennings, M. R., Roberts, G. J., Shah, V. A., Covington, James A. and Mawby, P. A. (2010) Germanium-silicon carbide heterojunction diodes - a study in device characteristics with increasing layer thickness and deposition temperature. In: 13th International Conference on Silicon Carbide and Related Materials, Nurnberg, Germany, October 11-16, 2009. Published in: Materials Science Forum, Vol.645-648 pp. 889-892. ISBN *****************. doi:10.4028/www.scientific.net/MSF.645-648.889 ISSN 0255-5476.
Myronov, Maksym, Dobbie, A. (Andrew), Shah, V. A., Liu, Xue-Chao, Nguyen, Van H. and Leadley, D. R. (David R.) (2010) High quality strained Ge epilayers on a Si0.2Ge0.8/Ge/Si(100) global strain-tuning platform. Electrochemical and Solid State Letters, Vol.13 (No.11). H388-H390. doi:10.1149/1.3482159 ISSN 1099-0062.
Myronov, Maksym, Shah, V. A., Dobbie, A. (Andrew), Liu, Xue-Chao, Nguyen, Van H., Leadley, D. R. (David R.) and Parker, Evan H. C. (2010) Highly strained Si epilayers grown on SiGe/Si(100) virtual substrate by reduced pressure chemical vapour deposition. physica status solidi (c), Vol.8 (No.3). pp. 952-955. doi:10.1002/pssc.201000255 ISSN 1862-6351.
Leadley, D. R. (David R.), Dobbie, A. (Andrew), Shah, V. A. and Parsons, J. (2010) Introduction to novel materials for nanoscale CMOS. In: Balestra, Francis, (ed.) Nanoscale CMOS : innovative materials, modeling, and characterization. London ; Hoboken, NJ: ISTE ; Wiley, pp. 3-22. ISBN 9781848211803
PΓ©rez-TomΓ‘s, Amador, Jennings, M. R., Gammon, P. M., Shah, V. A., Mawby, P. A. (Philip A.), Guy, O. J. and Hammond, R. (2010) Si on SiC, a novel platform for MOS power devices. In: 40th European Solid State Device Research Conference (ESSDERC), Seville, Spain, Sep 13-17, 2010
Leadley, D. R. (David R.), Dobbie, A. (Andrew), Myronov, Maksym, Shah, V. A. and Parker, Evan H. C. (2010) Strained Si and Ge channels. In: Balestra, Francis, (ed.) Nanoscale CMOS : innovative materials, modeling, and characterization. London ; Hoboken, NJ: ISTE ; Wiley, pp. 69-126. ISBN 9781848211803
2009
Gammon, P. M., PΓ©rez-TomΓ‘s, Amador, Shah, V. A., Roberts, G. J., Jennings, M. R., Covington, James A. and Mawby, P. A. (2009) Analysis of inhomogeneous Ge/SiC heterojunction diodes. Journal of Applied Physics, Vol.106 (No.9). Article no. 093708. doi:10.1063/1.3255976 ISSN 0021-8979.
Shah, V. A. (2009) Reverse graded high content (x>0.75) Si1-xGex virtual substrates. PhD thesis, University of Warwick.
2008
Shah, V. A., Dobbie, A., Myranov, Maksym, Fulgoni, D. J. F., Nash, Lee John and Leadley, D. R. (David R.) (2008) Reverse graded relaxed buffers for high Ge content SiGe virtual substrates. Applied Physics Letters, Vol.93 (No.19). p. 192103. doi:10.1063/1.3023068 ISSN 0003-6951.
Gammon, P. M., PΓ©rez-TomΓ‘s, Amador, Jennings, M. R., Roberts, G. J., Davis, M. C., Shah, V. A., Burrows, S. E., Wilson, Neil R., Covington, James A. and Mawby, P. A. (2008) Characterization of n-n Ge/SiC heterojunction diodes. Applied Physics Letters, Vol.93 (No.11). Article: 112104. doi:10.1063/1.2987421 ISSN 0003-6951.
2007
PΓ©rez-TomΓ‘s, Amador, Jennings, M. R., Davis, M., Shah, V. A., Grasby, T., Covington, James A. and Mawby, P. A. (2007) High doped MBE Si p-n and n-n heterojunction diodes on 4H-SiC. MICROELECTRONICS JOURNAL, 38 (12). pp. 1233-1237. doi:10.1016/j.mejo.2007.09.019 ISSN 0026-2692.
PΓ©rez-TomΓ‘s, Amador, Jennings, M. R., Davis, M. C., Covington, James A., Mawby, P. A., Shah, V. A. and Grasby, T. (2007) Characterization and modeling of n-n Si/SiC heterojunction diodes. Journal of Applied Physics, Vol.102 (No.1). Article: 014505. doi:10.1063/1.2752148 ISSN 0021-8979.
Mawby, P. A., PΓ©rez-TomΓ‘s, Amador, Jennings, M. R., Davis, M., Covington, James A., Shah, V. A. and Grasby, T. (2007) Molecular beam epitaxy Si/4H-SiC heterojunction diodes. In: 14th International Workshop on the Physics of Semiconductor Devices, Indian Inst Technol, Mumbai, India, 16-20 Dec 2007. Published in: International Workshop on Physics of Semiconductor Devices, 2007. IWPSD 2007 pp. 775-780. ISBN 9781424417278. doi:10.1109/IWPSD.2007.4472633
This list was generated on Wed Mar 27 19:38:43 2024 GMT.