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4H-SiC trench MOSFET with integrated fast recovery MPS diode
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Dai, Tianxiang, Chan, Chun Wa, Deng, Xc, Jiang, Huaping, Gammon, P. M., Jennings, M. R. and Mawby, P. A. (Philip A.) (2018) 4H-SiC trench MOSFET with integrated fast recovery MPS diode. ELECTRONICS LETTERS, 54 (3). pp. 167-169. doi:10.1049/el.2017.3198 ISSN 0013-5194.
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Official URL: http://dx.doi.org/10.1049/el.2017.3198
Abstract
A 4H-SiC trench metal-oxide-semiconductor field-effect-transistor (MOSFET) design with an integrated merged PiN Schottky (MPS) diode is proposed. The Schottky contact is embedded on the bottom of the trench structure for the first time. The low electric field in the oxide and Schottky contact surface can be achieved simultaneously using the proposed integration design which enhances the oxide reliability and reduces leakage from the Schottky diode. The integration of the MPS diode reduces the total chip area and the required number of dies compared with the conventional method of using an external Schottky diode.
| Item Type: | Journal Article | ||||||
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| Subjects: | Q Science > QD Chemistry T Technology > TK Electrical engineering. Electronics Nuclear engineering |
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| Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||||
| Library of Congress Subject Headings (LCSH): | Metal oxide semiconductor field-effect transistors, Field-effect transistors, Metal oxide semiconductors, PIN diodes , Silicon compounds , Wide gap semiconductors | ||||||
| Journal or Publication Title: | ELECTRONICS LETTERS | ||||||
| Publisher: | IEE-INST ELEC ENG | ||||||
| ISSN: | 0013-5194 | ||||||
| Official Date: | 8 February 2018 | ||||||
| Dates: |
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| Volume: | 54 | ||||||
| Number: | 3 | ||||||
| Page Range: | pp. 167-169 | ||||||
| DOI: | 10.1049/el.2017.3198 | ||||||
| Status: | Peer Reviewed | ||||||
| Publication Status: | Published | ||||||
| Access rights to Published version: | Open Access (Creative Commons) | ||||||
| RIOXX Funder/Project Grant: |
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