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4H-SiC trench MOSFET with integrated fast recovery MPS diode

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Dai, Tianxiang, Chan, Chun Wa, Deng, Xc, Jiang, Huaping, Gammon, P. M., Jennings, M. R. and Mawby, P. A. (Philip A.) (2018) 4H-SiC trench MOSFET with integrated fast recovery MPS diode. ELECTRONICS LETTERS, 54 (3). pp. 167-169. doi:10.1049/el.2017.3198 ISSN 0013-5194.

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Official URL: http://dx.doi.org/10.1049/el.2017.3198

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Abstract

A 4H-SiC trench metal-oxide-semiconductor field-effect-transistor (MOSFET) design with an integrated merged PiN Schottky (MPS) diode is proposed. The Schottky contact is embedded on the bottom of the trench structure for the first time. The low electric field in the oxide and Schottky contact surface can be achieved simultaneously using the proposed integration design which enhances the oxide reliability and reduces leakage from the Schottky diode. The integration of the MPS diode reduces the total chip area and the required number of dies compared with the conventional method of using an external Schottky diode.

Item Type: Journal Article
Subjects: Q Science > QD Chemistry
T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Faculty of Science, Engineering and Medicine > Engineering > Engineering
Library of Congress Subject Headings (LCSH): Metal oxide semiconductor field-effect transistors, Field-effect transistors, Metal oxide semiconductors, PIN diodes , Silicon compounds , Wide gap semiconductors
Journal or Publication Title: ELECTRONICS LETTERS
Publisher: IEE-INST ELEC ENG
ISSN: 0013-5194
Official Date: 8 February 2018
Dates:
DateEvent
8 February 2018Published
13 December 2017Available
Volume: 54
Number: 3
Page Range: pp. 167-169
DOI: 10.1049/el.2017.3198
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Open Access (Creative Commons)
RIOXX Funder/Project Grant:
Project/Grant IDRIOXX Funder NameFunder ID
EP/L007010/1[EPSRC] Engineering and Physical Sciences Research Councilhttp://dx.doi.org/10.13039/501100000266

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