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Current sharing of parallel SiC MOSFETs under short circuit conditions
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Wu, Ruizhu, Mendy, Simon, Gonzalez, Jose Ortiz, Jahdi, Saeed and Alatise, Olayiwola M. (2021) Current sharing of parallel SiC MOSFETs under short circuit conditions. In: 2021 23rd European Conference on Power Electronics and Applications (EPE'21 ECCE Europe), Ghent, Belgium, 6-10 Sep 2021. Published in: 2021 23rd European Conference on Power Electronics and Applications (EPE'21 ECCE Europe) pp. 1-9. ISBN 9789075815375. doi:10.23919/EPE21ECCEEurope50061.2021.9570690
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WRAP-Current-sharing-parallel-SiC-MOSFETs-short-circuit-conditions-2021.pdf - Accepted Version - Requires a PDF viewer. Download (1188Kb) | Preview |
Official URL: https://doi.org/10.23919/EPE21ECCEEurope50061.2021...
Abstract
Device-to-device parametric variations (e.g. threshold voltage V TH , gate resistance R G and junction temperature T J ) can cause variations in the short-circuit currents conducted through parallel-connected devices. In this paper, the impact of variations in V TH , R G and T J on current sharing under short-circuits is investigated using measurements and electrothermal modelling. The results show that V TH is the most critical parameter affecting short-circuit current sharing and directly impacts the peak short circuit current. Variations in gate resistance do not impact the short circuit current sharing unless the variation is over 400% thereby indicating catastrophic failure of the gate wirebond. Variation in the initial junction temperature is also not as critical as variations in V TH since the higher temperature device takes less short circuit current. Electrothermal simulations of parallel connected SiC MOSFETs have been developed to analyze how V TH mismatch impacts short circuit current sharing. These simulations allow for the investigation of the impact of V TH mismatch on the electrothermal stresses of the parallel connected MOSFETs.
Item Type: | Conference Item (Paper) | ||||||
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Subjects: | Q Science > QC Physics T Technology > TK Electrical engineering. Electronics Nuclear engineering |
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Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||||
Library of Congress Subject Headings (LCSH): | Semiconductors, Wide gap semiconductors, Short circuits , Metal oxide semiconductor field-effect transistors , Electric circuit analysis | ||||||
Journal or Publication Title: | 2021 23rd European Conference on Power Electronics and Applications (EPE'21 ECCE Europe) | ||||||
Publisher: | IEEE | ||||||
ISBN: | 9789075815375 | ||||||
Official Date: | 25 October 2021 | ||||||
Dates: |
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Page Range: | pp. 1-9 | ||||||
DOI: | 10.23919/EPE21ECCEEurope50061.2021.9570690 | ||||||
Status: | Peer Reviewed | ||||||
Publication Status: | Published | ||||||
Reuse Statement (publisher, data, author rights): | © 2021 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. | ||||||
Access rights to Published version: | Restricted or Subscription Access | ||||||
Date of first compliant deposit: | 24 November 2021 | ||||||
Date of first compliant Open Access: | 24 November 2021 | ||||||
RIOXX Funder/Project Grant: |
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Conference Paper Type: | Paper | ||||||
Title of Event: | 2021 23rd European Conference on Power Electronics and Applications (EPE'21 ECCE Europe) | ||||||
Type of Event: | Conference | ||||||
Location of Event: | Ghent, Belgium | ||||||
Date(s) of Event: | 6-10 Sep 2021 | ||||||
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