Rong, Hua, Sharma, Yogesh K., Dai, Tian Xiang, Li, Fan, Jennings, M. R., Russell, Stephen, Martin, David and Mawby, P. A. (Philip A.) (2016) High temperature nitridation of 4H-SiC MOSFETs. Materials Science Forum, 858 . pp. 623-626. doi:10.4028/www.scientific.net/MSF.858.623 ISSN 1662-9752.
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Abstract
This paper presents and analyse the experimental results of 4H-SiC(0001) lateral MOSFETs and MOS capacitors with gate oxides grown directly in N2O environment or in O2 ambient followed by a N2O post oxidation annealing process. Different nitridation temperatures of 1200°C, 1300°C, 1400°C and 1500°C have been investigated. Results have demonstrated that at high temperature (>1200°C) there is a significant improvement in the interface trap density (~1.5×1011 cm-2eV-1 at 0.2 eV) and field effect channel mobility (19 cm2/V.s) of 4H-SiC MOSFET compare with those at lower temperature (1×1012 cm-2eV-1 at 0.2 eV and 4 cm2/V.s). Among those nitridation temperatures, 1300°C has found to be the most effective in increasing the field effect channel mobility and reducing threshold voltage.
| Item Type: | Journal Article |
|---|---|
| Subjects: | Q Science > QC Physics T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering |
| Journal or Publication Title: | Materials Science Forum |
| Publisher: | Trans Tech Publications Ltd. |
| ISSN: | 1662-9752 |
| Official Date: | May 2016 |
| Dates: | Date Event May 2016 Published 2 January 2016 Accepted |
| Volume: | 858 |
| Page Range: | pp. 623-626 |
| DOI: | 10.4028/www.scientific.net/MSF.858.623 |
| Status: | Peer Reviewed |
| Publication Status: | Published |
| Access rights to Published version: | Restricted or Subscription Access |
| URI: | https://wrap.warwick.ac.uk/81405/ |
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