Misfit strain relaxation and dislocation formation in supercritical strained silicon on virtual substrates
Parsons, Jonathan, 1981-, Parker, Evan H. C., Leadley, D. R. (David R.), Grasby, T. J. and Capewell, A. D.. (2007) Misfit strain relaxation and dislocation formation in supercritical strained silicon on virtual substrates. Applied Physics Letters, Vol.91 (No.6). 063127. ISSN 0003-6951
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Official URL: http://dx.doi.org/10.1063/1.2769751
Relaxation of strained silicon on 20% linear graded virtual substrates was quantified using high resolution x-ray diffraction and a defect etching technique. The thickness of strained silicon was varied between 10 and 180 nm. Relaxation was observed in layers below the critical thickness but increased to only 2% relaxation in the thickest layers even with annealings up to 950 °C. Cross-sectional transmission electron microscopy revealed stacking faults present in layers thicker than 25 nm, and nucleated 90° Shockley partial dislocations forming microtwins in the thickest layer. These features are implicated in the impediment of the relaxation process.
|Item Type:||Journal Article|
|Subjects:||T Technology > TK Electrical engineering. Electronics Nuclear engineering
Q Science > QC Physics
|Divisions:||Faculty of Science > Physics|
|Library of Congress Subject Headings (LCSH):||Annealing of crystals, Germanium compounds, Silicon compounds, Dislocations in crystals, Transmission electron microscopy|
|Journal or Publication Title:||Applied Physics Letters|
|Publisher:||American Institute of Physics|
|Official Date:||10 August 2007|
|Access rights to Published version:||Open Access|
# D. J. Paul, Adv. Mater. (Weinheim, Ger.) 11, 191 (1999).
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