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Electronic band offset determination of oxides grown by atomic layer deposition on silicon
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Khorani, Edris, Messmer, Christoph A., Pain, Sophie L., Niewelt, Tim, Healy, Brendan F. M., Wratten, Ailish, Walker, Marc, Grant, Nicholas E. and Murphy, John D. (2023) Electronic band offset determination of oxides grown by atomic layer deposition on silicon. IEEE Journal of Photovoltaics, 13 (5). pp. 682-690. doi:10.1109/JPHOTOV.2023.3291048 ISSN 2156-3381.
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Official URL: https://doi.org/10.1109/JPHOTOV.2023.3291048
Abstract
Minimizing electrical losses at metal/silicon interfaces in high-efficiency single-junction silicon solar cells requires the use of carrier-selective passivating contacts. The electronic barrier heights at the insulator/silicon interface are necessary for calculating the probability of quantum tunneling of charge carriers at these interfaces. Thus, precise knowledge of these parameters is crucial for the development of contact schemes. Using a photoemission-based method, we experimentally determine the electronic band offsets of Al 2 O 3 , HfO 2 and SiO 2 layers grown by atomic layer deposition (ALD) on silicon. For Al 2 O 3 /Si, we determine a valence band offset (Δ EV ) and conduction band offset (Δ EC ) of 3.29 ± 0.07 eV and 2.24 ± 0.13 eV, respectively. For HfO 2 /Si, Δ EV and Δ EC are determined as 2.67 ± 0.07 eV and 1.81 ± 0.21 eV, while for SiO 2 /Si, Δ EV and Δ EC are 4.87 ± 0.07 eV and 2.61 ± 0.12 eV, respectively. Using technology computer-aided design simulations, we incorporate our experimental results to estimate the contact resistivity that would be attained at various dielectric layer thicknesses. We find that for achieving the 100 mΩ·cm 2 contact resistivity benchmark, Al 2 O 3 layers should be no thicker than 1.65 nm for a p -type polysilicon-based hole-selective contact, assuming hole tunneling masses taken from the literature. Correspondingly, for HfO 2 and SiO 2 , an upper limit of 1.4 nm is determined as the thickness threshold in order to utilize these ALD-grown layers for contacts in high-performance silicon photovoltaics.
Item Type: | Journal Article | |||||||||||||||||||||
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Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering | |||||||||||||||||||||
Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering Faculty of Science, Engineering and Medicine > Science > Physics |
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Library of Congress Subject Headings (LCSH): | Photovoltaic cells -- Design and construction, Atomic layer deposition, Silicon, Aluminum oxide, Energy bands | |||||||||||||||||||||
Journal or Publication Title: | IEEE Journal of Photovoltaics | |||||||||||||||||||||
Publisher: | IEEE | |||||||||||||||||||||
ISSN: | 2156-3381 | |||||||||||||||||||||
Official Date: | 11 July 2023 | |||||||||||||||||||||
Dates: |
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Volume: | 13 | |||||||||||||||||||||
Number: | 5 | |||||||||||||||||||||
Page Range: | pp. 682-690 | |||||||||||||||||||||
DOI: | 10.1109/JPHOTOV.2023.3291048 | |||||||||||||||||||||
Status: | Peer Reviewed | |||||||||||||||||||||
Publication Status: | Published | |||||||||||||||||||||
Reuse Statement (publisher, data, author rights): | © 2023 Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. | |||||||||||||||||||||
Access rights to Published version: | Restricted or Subscription Access | |||||||||||||||||||||
Date of first compliant deposit: | 26 June 2023 | |||||||||||||||||||||
Date of first compliant Open Access: | 26 June 2023 | |||||||||||||||||||||
RIOXX Funder/Project Grant: |
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