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Electron beam lithography and dimensional metrology for fin and nanowire devices on Ge, SiGe and GeOI substrates
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Petkov, Nikolay, Georgieva, Margarita, Bugu, Sinan, Duffy, Ray, McCarthy, Brendan, Myronov, Maksym, Kelleher, Ann-Marie, Maxwell, Graeme and Fagas, Giorgos (2023) Electron beam lithography and dimensional metrology for fin and nanowire devices on Ge, SiGe and GeOI substrates. Microelectronic Engineering, 280 . 112071. doi:10.1016/j.mee.2023.112071 ISSN 0167-9317.
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Official URL: http://doi.org/10.1016/j.mee.2023.112071
Abstract
Until now there is no systematic study on the effect of the substrate type on the hydrogen silsesquioxane (HSQ) electron beam lithography (EBL) patterning process. We investigate arrays of line structures with varying width and spacing, starting at 10 nm, exposed at varying dose, and developed by salty NaOH and TMAH developers on group IV semiconductor substrates. We demonstrate that the HSQ EBL process on Ge is much more limited in achieving the smallest obtainable features, having optimal uniformity and fidelity, in comparison to Si. Monte-Carlo simulations of the e-beam/substrate interactions for โpureโ Si and Ge substrates, and varying content Ge/Si epitaxial layers on Si, suggest that the limitations seen are directly linked to back-scattered electron (BSE) generation. As predicted by the simulations and shown experimentally, improved fidelity and resolution of the features can be achieved by minimizing the (BSE) generation coming from the Ge contribution in the substartes. Finally, from a metrology perspective, it is demonstrated that although line patterns may appear resolved in SEM images, the variation in the brightness across neighbouring lines is a key parameter in understanding the resist clearance between lines, that will affect the next etching step for pattern transfer onto the underlying substrate. These results are important for patterning high-density line structures and nano-device engineering as required for realising state-of-the art laterally stacked group IV multi-channel field effect transistors (FETs).
Item Type: | Journal Article | ||||||||
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Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||||||
Journal or Publication Title: | Microelectronic Engineering | ||||||||
Publisher: | Elsevier BV | ||||||||
ISSN: | 0167-9317 | ||||||||
Official Date: | 15 August 2023 | ||||||||
Dates: |
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Volume: | 280 | ||||||||
Article Number: | 112071 | ||||||||
DOI: | 10.1016/j.mee.2023.112071 | ||||||||
Status: | Peer Reviewed | ||||||||
Publication Status: | Published | ||||||||
Access rights to Published version: | Open Access (Creative Commons) | ||||||||
Date of first compliant deposit: | 15 September 2023 | ||||||||
Date of first compliant Open Access: | 15 September 2023 |
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