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Measurements and review of failure mechanisms and reliability constraints of 4H-SiC Power MOSFETs under short circuit events
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Yu, Renze, Jahdi, Saeed, Alatise, Olayiwola M., Ortiz-Gonzalez, Jose Angel , Munagala, Sai Priya, Simpson, Nick and Mellor, Phil (2023) Measurements and review of failure mechanisms and reliability constraints of 4H-SiC Power MOSFETs under short circuit events. IEEE Transactions on Device and Materials Reliability, 23 (4). pp. 544-563. doi:10.1109/tdmr.2023.3316928 ISSN 1558-2574.
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Official URL: https://doi.org/10.1109/tdmr.2023.3316928
Abstract
The reliability of the SiC MOSFET has always been a factor hindering the device application, especially under high voltage and high current conditions, such as in the short circuit events. This paper experimentally reviews the failure mechanisms caused by destructive short circuit impulses, and investigates the degradation patterns of key electrical parameters under repetitive short circuit events. The impact of test parameters on the short circuit reliability of SiC MOSFET has been analyzed. Approaches to characterize the electrical-thermal-mechanical stress during the short circuit period and advanced test methods are highlighted. Finally, the constraints from the standpoint of both manufacturers and users have been presented, including comparison of current SiC MOSFET devices, reliability evaluation of parallel SiC MOSFET devices, reliability improvement of the chip, performance improvement of protection circuits, and reliability assessment of SiC MOSFET devices under application-representative stress.
Item Type: | Journal Article | ||||||||
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Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering T Technology > TP Chemical technology |
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Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||||||
SWORD Depositor: | Library Publications Router | ||||||||
Library of Congress Subject Headings (LCSH): | Silicon carbide, Metal oxide semiconductor field-effect transistors -- Reliability, Short circuits, Insulated gate bipolar transistors -- Reliability, Power electronics | ||||||||
Journal or Publication Title: | IEEE Transactions on Device and Materials Reliability | ||||||||
Publisher: | Institute of Electrical and Electronics Engineers (IEEE) | ||||||||
ISSN: | 1558-2574 | ||||||||
Official Date: | December 2023 | ||||||||
Dates: |
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Volume: | 23 | ||||||||
Number: | 4 | ||||||||
Page Range: | pp. 544-563 | ||||||||
DOI: | 10.1109/tdmr.2023.3316928 | ||||||||
Status: | Peer Reviewed | ||||||||
Publication Status: | Published | ||||||||
Re-use Statement: | © 2023 Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. | ||||||||
Access rights to Published version: | Restricted or Subscription Access | ||||||||
Date of first compliant deposit: | 16 November 2023 | ||||||||
Date of first compliant Open Access: | 20 November 2023 | ||||||||
RIOXX Funder/Project Grant: |
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