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Design and investigation of a metamorphic InAs channel inset InP HEMT for cryogenic low-noise amplifiers
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Nandi, Soumak, Dubey, Shashank Kumar, Kumar, Mukesh, Dwivedi, Amit Krishna, Guduri, Manisha and Islam, Aminul (2023) Design and investigation of a metamorphic InAs channel inset InP HEMT for cryogenic low-noise amplifiers. IEEE Access, 11 . 133115 -133130. doi:10.1109/ACCESS.2023.3337036 ISSN 2169-3536.
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Official URL: http://doi.org/10.1109/ACCESS.2023.3337036
Abstract
This work proposes a 100 nm metamorphic InP HEMT with an InAs channel inset for cryogenic environment millimetre wave applications. The usage of an ultra-thin 2 nm barrier layer, unique composite channel topology and III-V material selection provides superior electron confinement in the channel, enhancing 2DEG concentration and mobility, thereby improving the speed of the proposed device. We achieve a unity current gain frequency ( f T ) of 248.9 GHz and a maximum oscillation frequency ( f MAX ) of 523.9 GHz with a current gain of 67.7 dB at 0.1 GHz, 298 K. A f T / f MAX of 5.02 GHz/10.01 GHz is achieved at 90 K. Off-state leakage current is in the nanoampere range with minimum noise figure ( NF MIN ) of only 0.09 dB at 10 GHz, 90 K. We compare the DC, RF, noise and parasitic characteristics of the proposed device with other composite channel InP HEMTs proposed in latest works and showcase performance improvements in all domains. The performance achieved by using an InAs insert specifically is also justified, with InGaAs-InAs-InGaAs channel HEMTs providing 1.4 times better f T and f MAX with only half the NF MIN of their InGaAs-InP-InGaAs channel counterparts. The proposed composite channel device showcases anomalous trends in electron scattering rate and electron mobility with impurity concentration and temperature variation. A novel frequency-and-temperature dependent small signal model has been put forth which accounts for these atypical cryogenic trends to accurately predict the behavior of the device under varying RF and temperature conditions.
Item Type: | Journal Article | ||||||
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Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering | ||||||
Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||||
Library of Congress Subject Headings (LCSH): | Cryoelectronics, Modulation-doped field-effect transistors, Low noise amplifiers | ||||||
Journal or Publication Title: | IEEE Access | ||||||
Publisher: | IEEE | ||||||
ISSN: | 2169-3536 | ||||||
Official Date: | 27 November 2023 | ||||||
Dates: |
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Volume: | 11 | ||||||
Page Range: | 133115 -133130 | ||||||
DOI: | 10.1109/ACCESS.2023.3337036 | ||||||
Status: | Peer Reviewed | ||||||
Publication Status: | Published | ||||||
Access rights to Published version: | Restricted or Subscription Access | ||||||
Date of first compliant deposit: | 1 December 2023 | ||||||
Date of first compliant Open Access: | 8 December 2023 |
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