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Dataset to support - "Influence of co-reactants on surface passivation by nanoscale hafnium oxide layers grown by atomic layer deposition on silicon"
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Pain, Sophie L., Khorani, Edris, Yadav, Anup, Niewelt, Tim, Leimenstoll, Antonio, Healy, Brendan F. M., Walker, Marc, Walker, David, Grant, Nicholas E. and Murphy, John D. (2023) Dataset to support - "Influence of co-reactants on surface passivation by nanoscale hafnium oxide layers grown by atomic layer deposition on silicon". [Dataset]
Plain Text (Read me file for Dataset 181742)
readme file for WRAP.txt - Supplemental Material Available under License Creative Commons Attribution 4.0. Download (658b) |
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Microsoft Excel (Dataset 181742)
Dataset for WRAP.xlsx - Published Version Available under License Creative Commons Attribution 4.0. Download (570Kb) |
Official URL: https://doi.org/10.1039/D3LF00210A
Abstract
Hafnium oxide thin films have attracted considerable interest for passivation layers, protective barriers, and anti-reflection coatings. Atomic layer deposition offers a route to produce conformal films at the nanometre scale, but there is a lack of clarity over how the growth conditions affect the film properties. Here we present a study into the role of different co-reactants (O2 plasma, O3 and H2O) for the atomic layer deposition of HfOx on n-type silicon from a tetrakis(dimethylamido)hafnium (TDMAH) precursor at 200 °C followed by post-deposition annealing (up to 500 °C). Through X-ray diffraction and X-ray photoelectron spectroscopy, we demonstrate variations in film composition, stoichiometry and crystallinity with co-reactant. Depth profiling conducted with X-ray photoelectron spectroscopy reveals differences in composition between the HfOx surface and the HfOx/Si interface. We also determine differences in the charge level and chemical passivation through photoconductance decay measurements and Kelvin probe analysis. We find that surface recombination velocities <10 cm s-1 are possible for HfOx films, with the best passivation achieved for H2O-based HfOx (SRVs as low as ~5 cm s-1). We show that with TDMAH as a hafnium precursor, neither co-reactant choice nor annealing ambient influence resulting charge polarity.
Item Type: | Dataset | ||||||||||||||||||
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Subjects: | Q Science > QD Chemistry | ||||||||||||||||||
Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering Faculty of Science, Engineering and Medicine > Science > Physics |
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Journal or Publication Title: | RSC Applied Interfaces | ||||||||||||||||||
Publisher: | University of Warwick, School of Engineering | ||||||||||||||||||
ISSN: | 2755-3701 | ||||||||||||||||||
Official Date: | 13 December 2023 | ||||||||||||||||||
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Status: | Peer Reviewed | ||||||||||||||||||
Publication Status: | Published | ||||||||||||||||||
Media of Output (format): | .xlsx | ||||||||||||||||||
Access rights to Published version: | Open Access (Creative Commons) | ||||||||||||||||||
Description: | Dataset to support a publication in RSC Applied Interfaces. |
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Date of first compliant deposit: | 13 December 2023 | ||||||||||||||||||
Date of first compliant Open Access: | 13 December 2023 | ||||||||||||||||||
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