Li, Fan, Vavasour, O., Walker, Marc, Martin, David, Sharma, Yogesh K., Russell, Stephen, Jennings, M. R., Pérez-Tomás, Amador and Mawby, P. A. (Philip A.) (2017) Physical characterisation of 3C-SiC(001)/SiO2 interface using XPS. Materials Science Forum, 897 . pp. 151-154. doi:10.4028/www.scientific.net/MSF.897.151 ISSN 1662-9752.
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Abstract
Normally-on MOSFETs were fabricated on 3C-SiC epilayers using high temperature (1300 °C) wet oxidation process. XPS analysis found little carbon at the MOS interface yet the channel mobility (60 cm2/V.s) is considerably low. Si suboxides (SiOx, x<2) exist at the wet oxidised 3C-SiC/SiO2 interface, which may act as interface traps and degrade the conduction performance.
| Item Type: | Journal Article |
|---|---|
| Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering |
| Journal or Publication Title: | Materials Science Forum |
| Publisher: | Trans Tech Publications Ltd. |
| ISSN: | 1662-9752 |
| Official Date: | 15 May 2017 |
| Dates: | Date Event 15 May 2017 Available 2 February 2017 Accepted |
| Volume: | 897 |
| Page Range: | pp. 151-154 |
| DOI: | 10.4028/www.scientific.net/MSF.897.151 |
| Status: | Peer Reviewed |
| Publication Status: | Published |
| Access rights to Published version: | Restricted or Subscription Access |
| Date of first compliant deposit: | 8 September 2017 |
| Date of first compliant Open Access: | 8 September 2017 |
| URI: | https://wrap.warwick.ac.uk/91876/ |
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