2017

Hassan, A. H. A., Morris, R. J. H. (Richard J. H.), Mironov, O A., Gabani, S., Dobbie, A. and Leadley, D. R. (David R.) (2017) An origin behind Rashba spin splitting within inverted doped sGe heterostructures. Applied Physics Letters, 110 (4). 042405. doi:10.1063/1.4974254 ISSN 0003-6951.

2016

Morris, R. J. H. (Richard J. H.), Hase, Thomas P. A., Sánchez, Ana M. and Rowlands, G. (George) (2016) Si1-x Ge x /Si interface profiles measured to sub-nanometer precision using uleSIMS energy sequencing. Journal of The American Society for Mass Spectrometry, 27 (10). pp. 1694-1702. doi:10.1007/s13361-016-1439-4 ISSN 1044-0305.

2015

Shah, V. A., Rhead, Stephen, Finch, June, Myronov, Maksym, Reparaz, J. S., Morris, R. J. H. (Richard J. H.), Wilson, Neil R., Kachkanov, V. , Dolbnya, I. P., Halpin, John E., Patchett, D. , Allred, Phil, Colston, Gerard B., Sawhney, K. J. S., Sotomayor Torres, C. M. and Leadley, D. R. (David R.) (2015) Electrical properties and strain distribution of Ge suspended structures. Solid-State Electronics, 108 . pp. 13-18. doi:10.1016/j.sse.2014.12.004 ISSN 0038-1101.

Richardson-Bullock, J. S., Prest, M. J. (Martin J.), Shah, V. A., Gunnarsson, David, Prunnila, Mika, Dobbie, A. (Andrew), Myronov, Maksym, Morris, R. J. H. (Richard J. H.), Whall, Terry E., Parker, Evan H. C. and Leadley, D. R. (David R.) (2015) Comparison of electron–phonon and hole–phonon energy loss rates in silicon. Solid-State Electronics, Volume 103 . pp. 40-43. doi:10.1016/j.sse.2014.09.002 ISSN 0038-1101.

2014

Mironov, O. A., Hassan, A. H. A., Morris, R. J. H. (Richard J. H.), Dobbie, A. (Andrew), Uhlarz, M., Chrastina, Daniel, Hague, J. P., Kiatgamolchai, S., Beanland, R., Gabani, S., Berkutov, I. B., Helm, Manfred, Drachenko, O., Myronov, Maksym and Leadley, D. R. (David R.) (2014) Ultra high hole mobilities in a pure strained Ge quantum well. Thin Solid Films, Volume 557 . pp. 329-333. doi:10.1016/j.tsf.2013.10.118 ISSN 0040-6090.

Hassan, A. H. A., Morris, R. J. H. (Richard J. H.), Mironov, O. A., Beanland, R., Walker, David, Huband, Steven, Dobbie, A. (Andrew), Myronov, Maksym and Leadley, D. R. (David R.) (2014) Anisotropy in the hole mobility measured along the [110] and [110] orientations in a strained Ge quantum well. Applied Physics Letters, Volume 104 (Number 13). Article number 132108. doi:10.1063/1.4870392 ISSN 0003-6951.

Mironov, O. A., Hassan, A. H. A., Uhlarz, M., Kiatgamolchai, S., Dobbie, A. (Andrew), Morris, R. J. H. (Richard J. H.), Halpin, John E., Rhead, S., Allred, Phil, Myronov, Maksym, Gabani, S., Berkutov, I. B. and Leadley, D. R. (David R.) (2014) New RP-CVD grown ultra-high performance selectively B-doped pure-Ge 20 nm QWs on (100)Si as basis material for post-Si CMOS technology. Physica Status Solidi (c), Volume 11 (Number 1). pp. 61-64. doi:10.1002/pssc.201300164 ISSN 18626351.

Fajardo, S. , Bastidas, D. M., Ryan, M. P., Criado, M. , McPhail, D. S., Morris, R. J. H. (Richard J. H.) and Bastidas, J. M. (2014) Low energy SIMS characterization of passive oxide films formed on a low-nickel stainless steel in alkaline media. Applied Surface Science, Volume 288 . pp. 423-429. doi:10.1016/j.apsusc.2013.10.050 ISSN 0169-4332.

2013

Yang, Li, Seah, Martin P., Gilmore, Ian S., Morris, R. J. H. (Richard J. H.), Dowsett, M. G., Boarino, Luca, Sparnacci, Katia and Laus, Michele (2013) Depth profiling and melting of nanoparticles in secondary ion mass spectrometry (SIMS). The Journal of Physical Chemistry Part C: Nanomaterials, Interfaces and Hard Matter, Volume 117 (Number 31). pp. 16042-16052. doi:10.1021/jp4048538 ISSN 1932-7447.

Ashwin, M. J., Morris, R. J. H., Walker, David, Thomas, Pam A., Dowsett, M. G., Jones, T. S. and Veal, T. D. (2013) Molecular-beam epitaxy and lattice parameter of GaNxSb1−x : deviation from Vegard's law for x>0.02. Journal of Physics D: Applied Physics, Volume 46 (Number 26). Article number 264003. doi:10.1088/0022-3727/46/26/264003 ISSN 0022-3727.

Morris, R. J. H. (Richard J. H.), Dowsett, M. G., Beanland, R., Dobbie, A. (Andrew), Myronov, Maksym and Leadley, D. R. (David R.) (2013) O2+ probe-sample conditions for ultra low energy SIMS depth profiling of nanometre scale Si0.4Ge0.6/Ge quantum wells. Surface and Interface Analysis, Volume 45 (Number 1). pp. 348-351. doi:10.1002/sia.4963 ISSN 0142-2421.

Dowsett, M. G., Morris, R. J. H. (Richard J. H.), Adriaens, A. (Annemie) and Wilson, Neil R. (2013) Ultra low energy O2+SIMS depth profiling of superficial poly(CuPc) and Co(II)T(o-NH2)PP monomolecular layers. Surface and Interface Analysis, Volume 45 (Number 1). pp. 324-328. doi:10.1002/sia.5039 ISSN 0142-2421.

Richardson-Bullock, J. S., Prest, M. J. (Martin J.), Prunnila, Mika, Gunnarsson, David, Shah, V. A., Dobbie, A. (Andrew), Myronov, Maksym, Morris, R. J. H. (Richard J. H.), Whall, Terry E., Parker, Evan H. C. and Leadley, D. R. (David R.) (2013) Hole-phonon energy loss rate in boron doped silicon. In: ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Coventry, UK, 19-21 March 2013. Published in: 14th International Conference on Ultimate Integration on Silicon pp. 213-215. ISBN 9781467348003. doi:10.1109/ULIS.2013.6523515

Hassan, A. H. A., Mironov, O. A., Feher, A., Cizmar, E., Gabani, S., Morris, R. J. H. (Richard J. H.), Dobbie, A. (Andrew), Shah, V. A., Myronov, Maksym, Berkutov, I. B., Andrievskii, V. V. and Leadley, D. R. (David R.) (2013) Pure Ge quantum well with high hole mobility. In: ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Coventry, UK, 19-21 March 2013. Published in: 14th International Conference on Ultimate Integration on Silicon (ULIS) pp. 117-120. ISBN 9781467348003. doi:10.1109/ULIS.2013.6523527

2012

Dobbie, A. (Andrew), Myronov, Maksym, Morris, R. J. H. (Richard J. H.), Hassan, A. H. A., Prest, M. J. (Martin J.), Shah, V. A., Parker, Evan H. C., Whall, Terry E. and Leadley, D. R. (David R.) (2012) Ultra-high hole mobility exceeding one million in a strained germanium quantum well. Applied Physics Letters, Vol.101 (No.17). p. 172108. doi:10.1063/1.4763476 ISSN 0003-6951.

Bouchenoire, Laurence, Morris, R. J. H. (Richard J. H.) and Hase, Thomas P. A. (2012) A silicon 〈111〉 phase retarder for producing circularly polarized x-rays in the 2.1-3 keV energy range. Applied Physics Letters, Vol.101 (No.6). 064107. doi:10.1063/1.4740080 ISSN 0003-6951.

Morris, R. J. H. (Richard J. H.), Dowsett, M. G., Beanland, R., Dobbie, A. (Andrew), Myronov, Maksym and Leadley, D. R. (David R.) (2012) Overcoming low Ge ionization and erosion rate variation for quantitative ultralow energy secondary ion mass spectrometry depth profiles of Si1–xGex/Ge quantum well structures. Analytical Chemistry, Vol.84 (No.5). pp. 2292-2298. doi:10.1021/ac202929x ISSN 0003-2700.

Linhart, W. M., Chai, J., Morris, R. J. H. (Richard J. H.), Dowsett, M. G., McConville, C. F. (Chris F.), Durbin, S. and Veal, T. D. (Tim D.) (2012) Giant reduction of InN surface electron accumulation : compensation of surface donors by Mg dopants. Physical Review Letters, Vol.109 (No.24). Article no. 247605. doi:10.1103/PhysRevLett.109.247605 ISSN 0031-9007.

Chai, Jessica H., Myers, Thomas H., Song, Young-Wook, Reeves, Roger J., Linhart, W. M., Morris, R. J. H. (Richard J. H.), Veal, T. D. (Tim D.), Dowsett, M. G., McConville, C. F. (Chris F.) and Durbin, Steven M. (2012) MBE growth and characterization of Mn-doped InN. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Volume 30 (Number 2). 02B124. doi:10.1116/1.3687903 ISSN 1071-1023.

Berkutov, I. B., Andrievskii, V. V., Komnik, Yu. F., Kolesnichenko, Yu. A., Morris, R. J. H. (Richard J. H.), Leadley, D. R. (David R.) and Mironov, O. A. (2012) Magnetotransport studies of SiGe-based p-type heterostructures : problems with the determination of effective mass. Low Temperature Physics, Volume 38 (Number12). Article number 1145. doi:10.1063/1.4770520 ISSN 1063-777X.

Dobbie, A. (Andrew), Nguyen, Van H., Morris, R. J. H. (Richard J. H.), Liu, Xue-Chao, Myronov, Maksym and Leadley, D. R. (David R.) (2012) Thermal stability of thin compressively strained Ge surface channels grown on relaxed Si0.2Ge0.8 reverse-graded buffers. Journal of The Electrochemical Society, Vol.159 (No.5). H490-H496. doi:10.1149/2.063205jes ISSN 0013-4651.

Dobbie, A. (Andrew), Myronov, Maksym, Morris, R. J. H. (Richard J. H.), Prest, M. J. (Martin J.), Richardson-Bullock, J. S., Hassan, A. H. A., Shah, V. A., Parker, Evan H. C., Whall, Terry E. and Leadley, D. R. (David R.) (2012) Ultra-high Hall mobility (1 x 106 cm2V-1S-1) in a two-dimensional hole gas in a strained germanium quantum well grown by reduced pressure CVD. In: 6th International Silicon-Germanium Technology and Device Meeting, ISTDM 2012, Berkeley, CA, USA, 4-6 June 2012. Published in: 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings (Article number 6222451). pp. 48-49. ISBN 9781457718625. doi:10.1109/ISTDM.2012.6222451

2011

Prest, M. J. (Martin J.), Muhonen, Juha, Prunnila, Mika, Gunnarsson, David, Shah, V. A., Richardson-Bullock, J. S., Dobbie, A. (Andrew), Myronov, Maksym, Morris, R. J. H. (Richard J. H.), Whall, Terry E., Parker, Evan H. C. and Leadley, D. R. (David R.) (2011) Strain enhanced electron cooling in a degenerately doped semiconductor. Applied Physics Letters, Vol.99 (No.25). Article: 251908. doi:10.1063/1.3670330 ISSN 0003-6951.

Liu, J., Chater, R. J., Morris, R. J. H. (Richard J. H.) and Skinner, S. J. (2011) Oxygen surface exchange and diffusion studies of La2Mo2O9 in different exchange atmospheres. Solid State Ionics, Vol.189 (No.1). pp. 39-44. doi:10.1016/j.ssi.2011.02.018 ISSN 0167-2738.

Muhonen, Juha, Prest, M. J. (Martin J.), Prunnila, Mika, Gunnarsson, David, Shah, V. A., Dobbie, A. (Andrew), Myronov, Maksym, Morris, R. J. H. (Richard J. H.), Whall, Terry E., Parker, Evan H. C. and Leadley, D. R. (David R.) (2011) Strain dependence of electron-phonon energy loss rate in many-valley semiconductors. Applied Physics Letters, Vol.98 (No.18). p. 182103. doi:10.1063/1.3579524 ISSN 0003-6951.

Cook, Robert M., Pegg, Lara-Jane, Kinnear, Sophie L., Hutter, Oliver S., Morris, R. J. H. (Richard J. H.) and Hatton, Ross A. (2011) An electrode design rule for organic photovoltaics elucidated using molecular nanolayers. Advanced Energy Materials, Vol.1 (No.3). pp. 440-447. doi:10.1002/aenm.201100027 ISSN 1614-6832.

Morris, R. J. H. (Richard J. H.) and Dowsett, M. G. (2011) Ion, sputter and useful ion yields for accurate quantification of Si1−xGex(0 < x < 1) using ultra low energy O2+ SIMS. Surface and Interface Analysis, Vol.43 (No.1-2). pp. 543-546. doi:10.1002/sia.3506 ISSN 0142-2421.

Dowsett, M. G., Morris, R. J. H., Hand, M., Grigg, A. T., Walker, David and Beanland, R. (2011) The influence of beam energy on apparent layer thickness using ultralow energy O2+ SIMS on surface Si1−xGex. Surface and Interface Analysis, Vol.43 (No.1-2). pp. 211-213. doi:10.1002/sia.3433 ISSN 0142-2421.

Morris, R. J. H. (Richard J. H.), Fearn, S., Perkins, J., Kilner, J., Dowsett, M. G., Beigalski, M. D. and Rouleau, C. M. (2011) The use of low-energy SIMS (LE-SIMS) for nanoscale fuel cell material development. Surface and Interface Analysis, Vol.43 (No.1-2). pp. 635-638. doi:10.1002/sia.3526 ISSN 0142-2421.

Liu, Xue-Chao, Myronov, Maksym, Dobbie, A. (Andrew), Morris, R. J. H. (Richard J. H.) and Leadley, D. R. (David R.) (2011) High-quality Ge/Si0.4Ge0.6multiple quantum wells for photonic applications : growth by reduced pressure chemical vapour deposition and structural characteristics. Journal of Physics D : Applied Physics, Vol.44 (No.5). article no. 055102. doi:10.1088/0022-3727/44/5/055102 ISSN 0022-3727.

2010

Perkins, James M., Fearn, Sarah, Cook, Stuart N., Srinivasan, Rajagopalan, Rouleau, Chris M., Christen, Hans M., West, Geoffrey D., Morris, R. J. H. (Richard J. H.), Fraser, Hamish L., Skinner, Stephen J., Kilner, John A. and McComb, David W. (2010) Anomalous oxidation states in multilayers for fuel cell applications. Advanced Functional Materials, Vol.20 (No.16). pp. 2664-2674. doi:10.1002/adfm.201000279 ISSN 1616-301X.

Morris, R. J. H. (Richard J. H.), Dowsett, M. G., Beanland, R., Parbrook, P. J. and McConville, C. F. (Chris F.) (2010) Accurate ultra-low-energy secondary ion mass spectrometry analysis of wide bandgap GaN/InxGa1-xN structures using optical conductivity enhancement. Rapid Communications in Mass Spectrometry, Vol.24 (No.14). pp. 2122-2126. doi:10.1002/rcm.4623 ISSN 0951-4198.

Liu, J., Chater, R. J., Hagenhoff, B., Morris, R. J. H. (Richard J. H.) and Skinner, S. J. (2010) Surface enhancement of oxygen exchange and diffusion in the ionic conductor La2Mo2O9. Solid State Ionics, Vol.181 (No..17-18). pp. 812-818. doi:10.1016/j.ssi.2010.04.009 ISSN 0167-2738.

Mironov, O. A., Goiran, M., Galibert, J., Kozlov, D. V., Ikonnikov, A. V., Spirin, K. E., Gavrilenko, V. I., Isella, G., Kummer, M., von Känel, H., Drachenko, O., Helm, Manfred, Wosnitza, Joachim, Morris, R. J. H. and Leadley, D. R. (David R.) (2010) Cyclotron resonance of extremely conductive 2D holes in high Ge content strained heterostructures. Journal of Low Temperature Physics, Vol.159 (No.1-2). pp. 216-221. doi:10.1007/s10909-009-0147-x ISSN 0022-2291.

2009

Morris, R. J. H. (Richard J. H.) and Dowsett, M. G. (2009) Ion yields and erosion rates for Si1−xGex(0x1) ultralow energy O2+ secondary ion mass spectrometry in the energy range of 0.25–1 keV. Journal of Applied Physics, Vol.105 (No.11). p. 4316. doi:10.1063/1.3139279 ISSN 0021-8979.

2008

Parsons, Jonathan, Morris, R. J. H., Leadley, D. R. (David R.), Parker, Evan H. C., Fulgoni, D. J. F. and Nash, Lee John (2008) Relaxation of strained silicon on Si0.5Ge0.5 virtual substrates. Applied Physics Letters, Vol.93 (No.7). 072108. doi:10.1063/1.2975188 ISSN 0003-6951.

Beer, C. (Chris), Whall, Terry E., Morris, R. J. H. (Richard J. H.), Parker, Evan H. C. and Leadley, D. R. (David R.) (2008) Anomalous Ge diffusion effects during Ge-condensation. In: 9th International Conference on Ultimate Integration on Silicon, Univ Udine, Udine, Italy, Mar 13-14, 2008. Published in: ULIS 2008: Proceedings of the 9th International Conference on Ultimate Integration on Silicon pp. 207-210. ISBN 978-1-4244-1729-2. doi:10.1109/ULIS.2008.4527175

Parsons, J., Morris, R. J. H. (Richard J. H.), Leadley, D. R. (David R.) and Parker, Evan H. C. (2008) Relaxation of strained silicon on Si0.5Ge0.5 virtual substrates. In: 9th International Conference on Ultimate Integration on Silicon, Univ Udine, Udine, Italy, 13-14 Mar 2008. Published in: ULIS 2008 : Proceedings of the 9th International conference on ultimate integration on silicon pp. 211-214. ISBN 978-1-4244-1729-2. doi:10.1109/ULIS.2008.4527176

2007

Morris, R. J. H. (Richard J. H.), Dowsett, M. G., Dalal, S. H., Baptista, D. L., Teo, K. B. K. and Milne, W. I. (2007) Spatial determination of gold catalyst residue used in the production of ZnO nanowires by SIMS depth profiling analysis. Surface and Interface Analysis, Vol.39 (No.11). pp. 898-901. doi:10.1002/sia.2610 ISSN 0142-2421.

Parsons, J., Parker, Evan H. C., Leadley, D. R. (David R.), Morris, R. J. H. (Richard J. H.), Grasby, T. J. and Capewell, Adam Daniel (2007) Erratum: Misfit strain relaxation and dislocation formation in supercritical strained silicon on virtual substrates [ Appl. Phys. Lett. 91, 063127 (2007) ]. Applied Physics Letters, Vol.91 (No.18). doi:10.1063/1.2798244

2006

Franco, N., Alves, E., Vallera, A., Morris, R. J. H. (Richard J. H.), Mironov, O. A., Parker, Evan H. C. and Barradas, N. P. (2006) RBS and XRD analysis of SiGe/Ge heterostructures for p-HMOS applications. In: 17th International Conference on Ion Beam Analysis, Seville, Spain, June 26 - July 01, 2005. Published in: Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, Vol.249 (No.1-2). pp. 878-881. doi:10.1016/j.nimb.2006.03.155 ISSN 1872-9584.

Morris, R. J. H. (Richard J. H.), Dowsett, M. G. and Chang, R. J. H. (2006) Different optical conductivity enhancement (OCE) protocols to eliminate charging during ultra low energy SIMS profiling of semiconductor and semi-insulating materials. In: 15th International Conference on Secondary Ion Mass Spectrometry (SIMS XV), Univ Manchester, Manchester, 12-16 Sep 2005. Published in: Applied Surface Science, Volume 252 (Number 19 ). pp. 7221-7223. doi:10.1016/j.apsusc.2006.02.143 ISSN 0169-4332.

Fearn, S., McPhail, D. S., Morris, R. J. H. (Richard J. H.) and Dowsett, M. G. (2006) Sodium and hydrogen analysis of room temperature glass corrosion using low energy CsSIMS. In: 15th International Conference on Secondary Ion Mass Spectrometry (SIMS XV), Univ Manchester, Manchester, 12-16 Sep 2005. Published in: Applied Surface Science, Volume 252 (Number 19 ). pp. 7070-7073. doi:10.1016/j.apsusc.2006.02.101 ISSN 0169-4332.

Guzman de la Mata, B., Dowsett, M. G. and Morris, R. J. H. (Richard J. H.) (2006) Alternative method of using an electron beam for charge compensation during ultralow energy secondary-ion-mass spectroscopy experiments. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 24 (4). pp. 953-956. doi:10.1116/1.2201044 ISSN 0734-2101.

2003

Morris, R. J. H. (Richard J. H.) (2003) Optimisation studies on strain-engineered Germanium heterostructures. PhD thesis, University of Warwick.

1999

Grasby, T. J., Parry, C. P., Phillips, P. J. (Peter J.), McGregor, Barry M., Morris, R. J. H. (Richard J. H.), Braithwaite, Glyn, Whall, Terry E., Parker, Evan H. C., Hammond, Richard, Knights, Andrew P. and Coleman, P. G. (1999) Technique for producing highly planar Si/SiO0.64Ge0.36/Si metal–oxide–semiconductor field effect transistor channels. Applied Physics Letters, Vol.74 (No.13). pp. 1848-1850. doi:10.1063/1.123689 ISSN 0003-6951.