2017

Hassan, A. H. A., Morris, R. J. H. (Richard J. H.), Mironov, O A., Gabani, S., Dobbie, A. and Leadley, D. R. (David R.) (2017) An origin behind Rashba spin splitting within inverted doped sGe heterostructures. Applied Physics Letters, 110 (4). 042405. doi:10.1063/1.4974254

2016

Morris, R. J. H. (Richard J. H.), Hase, Thomas P. A., Sánchez, Ana M. and Rowlands, G. (George) (2016) Si1-x Ge x /Si interface profiles measured to sub-nanometer precision using uleSIMS energy sequencing. Journal of The American Society for Mass Spectrometry, 27 (10). pp. 1694-1702. doi:10.1007/s13361-016-1439-4

2015

Shah, V. A., Rhead, Stephen, Finch, June, Myronov, Maksym, Reparaz, J. S., Morris, R. J. H. (Richard J. H.), Wilson, Neil R., Kachkanov, V. , Dolbnya, I. P., Halpin, John E., Patchett, D. , Allred, Phil, Colston, Gerard B., Sawhney, K. J. S., Sotomayor Torres, C. M. and Leadley, D. R. (David R.) (2015) Electrical properties and strain distribution of Ge suspended structures. Solid-State Electronics, 108 . pp. 13-18. doi:10.1016/j.sse.2014.12.004

Richardson-Bullock, J. S., Prest, M. J. (Martin J.), Shah, V. A., Gunnarsson, David, Prunnila, Mika, Dobbie, A. (Andrew), Myronov, Maksym, Morris, R. J. H. (Richard J. H.), Whall, Terry E., Parker, Evan H. C. and Leadley, D. R. (David R.) (2015) Comparison of electron–phonon and hole–phonon energy loss rates in silicon. Solid-State Electronics, Volume 103 . pp. 40-43. doi:10.1016/j.sse.2014.09.002

2014

Mironov, O. A., Hassan, A. H. A., Morris, R. J. H. (Richard J. H.), Dobbie, A. (Andrew), Uhlarz, M., Chrastina, Daniel, Hague, J. P., Kiatgamolchai, S., Beanland, R., Gabani, S., Berkutov, I. B., Helm, Manfred, Drachenko, O., Myronov, Maksym and Leadley, D. R. (David R.) (2014) Ultra high hole mobilities in a pure strained Ge quantum well. Thin Solid Films, Volume 557 . pp. 329-333. doi:10.1016/j.tsf.2013.10.118

Hassan, A. H. A., Morris, R. J. H. (Richard J. H.), Mironov, O. A., Beanland, R., Walker, David, Huband, Steven, Dobbie, A. (Andrew), Myronov, Maksym and Leadley, D. R. (David R.) (2014) Anisotropy in the hole mobility measured along the [110] and [110] orientations in a strained Ge quantum well. Applied Physics Letters, Volume 104 (Number 13). Article number 132108. doi:10.1063/1.4870392

Mironov, O. A., Hassan, A. H. A., Uhlarz, M., Kiatgamolchai, S., Dobbie, A. (Andrew), Morris, R. J. H. (Richard J. H.), Halpin, John E., Rhead, S., Allred, Phil, Myronov, Maksym, Gabani, S., Berkutov, I. B. and Leadley, D. R. (David R.) (2014) New RP-CVD grown ultra-high performance selectively B-doped pure-Ge 20 nm QWs on (100)Si as basis material for post-Si CMOS technology. Physica Status Solidi (c), Volume 11 (Number 1). pp. 61-64. doi:10.1002/pssc.201300164

Fajardo, S. , Bastidas, D. M., Ryan, M. P., Criado, M. , McPhail, D. S., Morris, R. J. H. (Richard J. H.) and Bastidas, J. M. (2014) Low energy SIMS characterization of passive oxide films formed on a low-nickel stainless steel in alkaline media. Applied Surface Science, Volume 288 . pp. 423-429. doi:10.1016/j.apsusc.2013.10.050

2013

Yang, Li, Seah, Martin P., Gilmore, Ian S., Morris, R. J. H. (Richard J. H.), Dowsett, M. G., Boarino, Luca, Sparnacci, Katia and Laus, Michele (2013) Depth profiling and melting of nanoparticles in secondary ion mass spectrometry (SIMS). The Journal of Physical Chemistry Part C: Nanomaterials, Interfaces and Hard Matter, Volume 117 (Number 31). pp. 16042-16052. doi:10.1021/jp4048538

Ashwin, M. J., Morris, R. J. H., Walker, David, Thomas, Pam A., Dowsett, M. G., Jones, T. S. and Veal, T. D. (2013) Molecular-beam epitaxy and lattice parameter of GaNxSb1−x : deviation from Vegard's law for x>0.02. Journal of Physics D: Applied Physics, Volume 46 (Number 26). Article number 264003. doi:10.1088/0022-3727/46/26/264003

Morris, R. J. H. (Richard J. H.), Dowsett, M. G., Beanland, R., Dobbie, A. (Andrew), Myronov, Maksym and Leadley, D. R. (David R.) (2013) O2+ probe-sample conditions for ultra low energy SIMS depth profiling of nanometre scale Si0.4Ge0.6/Ge quantum wells. Surface and Interface Analysis, Volume 45 (Number 1). pp. 348-351. doi:10.1002/sia.4963

Dowsett, M. G., Morris, R. J. H. (Richard J. H.), Adriaens, A. (Annemie) and Wilson, Neil R. (2013) Ultra low energy O2+SIMS depth profiling of superficial poly(CuPc) and Co(II)T(o-NH2)PP monomolecular layers. Surface and Interface Analysis, Volume 45 (Number 1). pp. 324-328. doi:10.1002/sia.5039

Richardson-Bullock, J. S., Prest, M. J. (Martin J.), Prunnila, Mika, Gunnarsson, David, Shah, V. A., Dobbie, A. (Andrew), Myronov, Maksym, Morris, R. J. H. (Richard J. H.), Whall, Terry E., Parker, Evan H. C. and Leadley, D. R. (David R.) (2013) Hole-phonon energy loss rate in boron doped silicon. In: ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Coventry, UK, 19-21 March 2013. Published in: 14th International Conference on Ultimate Integration on Silicon pp. 213-215. ISBN 9781467348003. doi:10.1109/ULIS.2013.6523515

Hassan, A. H. A., Mironov, O. A., Feher, A., Cizmar, E., Gabani, S., Morris, R. J. H. (Richard J. H.), Dobbie, A. (Andrew), Shah, V. A., Myronov, Maksym, Berkutov, I. B., Andrievskii, V. V. and Leadley, D. R. (David R.) (2013) Pure Ge quantum well with high hole mobility. In: ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Coventry, UK, 19-21 March 2013. Published in: 14th International Conference on Ultimate Integration on Silicon (ULIS) pp. 117-120. ISBN 9781467348003. doi:10.1109/ULIS.2013.6523527

2012

Dobbie, A. (Andrew), Myronov, Maksym, Morris, R. J. H. (Richard J. H.), Hassan, A. H. A., Prest, M. J. (Martin J.), Shah, V. A., Parker, Evan H. C., Whall, Terry E. and Leadley, D. R. (David R.) (2012) Ultra-high hole mobility exceeding one million in a strained germanium quantum well. Applied Physics Letters, Vol.101 (No.17). p. 172108. doi:10.1063/1.4763476

Bouchenoire, Laurence, Morris, R. J. H. (Richard J. H.) and Hase, Thomas P. A. (2012) A silicon 〈111〉 phase retarder for producing circularly polarized x-rays in the 2.1-3 keV energy range. Applied Physics Letters, Vol.101 (No.6). 064107. doi:10.1063/1.4740080

Morris, R. J. H. (Richard J. H.), Dowsett, M. G., Beanland, R., Dobbie, A. (Andrew), Myronov, Maksym and Leadley, D. R. (David R.) (2012) Overcoming low Ge ionization and erosion rate variation for quantitative ultralow energy secondary ion mass spectrometry depth profiles of Si1–xGex/Ge quantum well structures. Analytical Chemistry, Vol.84 (No.5). pp. 2292-2298. doi:10.1021/ac202929x

Linhart, W. M., Chai, J., Morris, R. J. H. (Richard J. H.), Dowsett, M. G., McConville, C. F. (Chris F.), Durbin, S. and Veal, T. D. (Tim D.) (2012) Giant reduction of InN surface electron accumulation : compensation of surface donors by Mg dopants. Physical Review Letters, Vol.109 (No.24). Article no. 247605. doi:10.1103/PhysRevLett.109.247605

Chai, Jessica H., Myers, Thomas H., Song, Young-Wook, Reeves, Roger J., Linhart, W. M., Morris, R. J. H. (Richard J. H.), Veal, T. D. (Tim D.), Dowsett, M. G., McConville, C. F. (Chris F.) and Durbin, Steven M. (2012) MBE growth and characterization of Mn-doped InN. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Volume 30 (Number 2). 02B124. doi:10.1116/1.3687903

Berkutov, I. B., Andrievskii, V. V., Komnik, Yu. F., Kolesnichenko, Yu. A., Morris, R. J. H. (Richard J. H.), Leadley, D. R. (David R.) and Mironov, O. A. (2012) Magnetotransport studies of SiGe-based p-type heterostructures : problems with the determination of effective mass. Low Temperature Physics, Volume 38 (Number12). Article number 1145. doi:10.1063/1.4770520

Dobbie, A. (Andrew), Nguyen, Van H., Morris, R. J. H. (Richard J. H.), Liu, Xue-Chao, Myronov, Maksym and Leadley, D. R. (David R.) (2012) Thermal stability of thin compressively strained Ge surface channels grown on relaxed Si0.2Ge0.8 reverse-graded buffers. Journal of The Electrochemical Society, Vol.159 (No.5). H490-H496. doi:10.1149/2.063205jes

Dobbie, A. (Andrew), Myronov, Maksym, Morris, R. J. H. (Richard J. H.), Prest, M. J. (Martin J.), Richardson-Bullock, J. S., Hassan, A. H. A., Shah, V. A., Parker, Evan H. C., Whall, Terry E. and Leadley, D. R. (David R.) (2012) Ultra-high Hall mobility (1 x 106 cm2V-1S-1) in a two-dimensional hole gas in a strained germanium quantum well grown by reduced pressure CVD. In: 6th International Silicon-Germanium Technology and Device Meeting, ISTDM 2012, Berkeley, CA, USA, 4-6 June 2012. Published in: 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings (Article number 6222451). pp. 48-49. ISBN 9781457718625. doi:10.1109/ISTDM.2012.6222451

2011

Prest, M. J. (Martin J.), Muhonen, Juha, Prunnila, Mika, Gunnarsson, David, Shah, V. A., Richardson-Bullock, J. S., Dobbie, A. (Andrew), Myronov, Maksym, Morris, R. J. H. (Richard J. H.), Whall, Terry E., Parker, Evan H. C. and Leadley, D. R. (David R.) (2011) Strain enhanced electron cooling in a degenerately doped semiconductor. Applied Physics Letters, Vol.99 (No.25). Article: 251908. doi:10.1063/1.3670330

Liu, J., Chater, R. J., Morris, R. J. H. (Richard J. H.) and Skinner, S. J. (2011) Oxygen surface exchange and diffusion studies of La2Mo2O9 in different exchange atmospheres. Solid State Ionics, Vol.189 (No.1). pp. 39-44. doi:10.1016/j.ssi.2011.02.018

Muhonen, Juha, Prest, M. J. (Martin J.), Prunnila, Mika, Gunnarsson, David, Shah, V. A., Dobbie, A. (Andrew), Myronov, Maksym, Morris, R. J. H. (Richard J. H.), Whall, Terry E., Parker, Evan H. C. and Leadley, D. R. (David R.) (2011) Strain dependence of electron-phonon energy loss rate in many-valley semiconductors. Applied Physics Letters, Vol.98 (No.18). p. 182103. doi:10.1063/1.3579524

Cook, Robert M., Pegg, Lara-Jane, Kinnear, Sophie L., Hutter, Oliver S., Morris, R. J. H. (Richard J. H.) and Hatton, Ross A. (2011) An electrode design rule for organic photovoltaics elucidated using molecular nanolayers. Advanced Energy Materials, Vol.1 (No.3). pp. 440-447. doi:10.1002/aenm.201100027

Morris, R. J. H. (Richard J. H.) and Dowsett, M. G. (2011) Ion, sputter and useful ion yields for accurate quantification of Si1−xGex(0 < x < 1) using ultra low energy O2+ SIMS. Surface and Interface Analysis, Vol.43 (No.1-2). pp. 543-546. doi:10.1002/sia.3506

Dowsett, M. G., Morris, R. J. H., Hand, M., Grigg, A. T., Walker, David and Beanland, R. (2011) The influence of beam energy on apparent layer thickness using ultralow energy O2+ SIMS on surface Si1−xGex. Surface and Interface Analysis, Vol.43 (No.1-2). pp. 211-213. doi:10.1002/sia.3433

Morris, R. J. H. (Richard J. H.), Fearn, S., Perkins, J., Kilner, J., Dowsett, M. G., Beigalski, M. D. and Rouleau, C. M. (2011) The use of low-energy SIMS (LE-SIMS) for nanoscale fuel cell material development. Surface and Interface Analysis, Vol.43 (No.1-2). pp. 635-638. doi:10.1002/sia.3526

Liu, Xue-Chao, Myronov, Maksym, Dobbie, A. (Andrew), Morris, R. J. H. (Richard J. H.) and Leadley, D. R. (David R.) (2011) High-quality Ge/Si0.4Ge0.6multiple quantum wells for photonic applications : growth by reduced pressure chemical vapour deposition and structural characteristics. Journal of Physics D : Applied Physics, Vol.44 (No.5). article no. 055102. doi:10.1088/0022-3727/44/5/055102

2010

Perkins, James M., Fearn, Sarah, Cook, Stuart N., Srinivasan, Rajagopalan, Rouleau, Chris M., Christen, Hans M., West, Geoffrey D., Morris, R. J. H. (Richard J. H.), Fraser, Hamish L., Skinner, Stephen J., Kilner, John A. and McComb, David W. (2010) Anomalous oxidation states in multilayers for fuel cell applications. Advanced Functional Materials, Vol.20 (No.16). pp. 2664-2674. doi:10.1002/adfm.201000279

Morris, R. J. H. (Richard J. H.), Dowsett, M. G., Beanland, R., Parbrook, P. J. and McConville, C. F. (Chris F.) (2010) Accurate ultra-low-energy secondary ion mass spectrometry analysis of wide bandgap GaN/InxGa1-xN structures using optical conductivity enhancement. Rapid Communications in Mass Spectrometry, Vol.24 (No.14). pp. 2122-2126. doi:10.1002/rcm.4623

Liu, J., Chater, R. J., Hagenhoff, B., Morris, R. J. H. (Richard J. H.) and Skinner, S. J. (2010) Surface enhancement of oxygen exchange and diffusion in the ionic conductor La2Mo2O9. Solid State Ionics, Vol.181 (No..17-18). pp. 812-818. doi:10.1016/j.ssi.2010.04.009

Mironov, O. A., Goiran, M., Galibert, J., Kozlov, D. V., Ikonnikov, A. V., Spirin, K. E., Gavrilenko, V. I., Isella, G., Kummer, M., von Känel, H., Drachenko, O., Helm, Manfred, Wosnitza, Joachim, Morris, R. J. H. and Leadley, D. R. (David R.) (2010) Cyclotron resonance of extremely conductive 2D holes in high Ge content strained heterostructures. Journal of Low Temperature Physics, Vol.159 (No.1-2). pp. 216-221. doi:10.1007/s10909-009-0147-x

2009

Morris, R. J. H. (Richard J. H.) and Dowsett, M. G. (2009) Ion yields and erosion rates for Si1−xGex(0x1) ultralow energy O2+ secondary ion mass spectrometry in the energy range of 0.25–1 keV. Journal of Applied Physics, Vol.105 (No.11). p. 4316. doi:10.1063/1.3139279

2008

Parsons, Jonathan, Morris, R. J. H., Leadley, D. R. (David R.), Parker, Evan H. C., Fulgoni, D. J. F. and Nash, Lee John (2008) Relaxation of strained silicon on Si0.5Ge0.5 virtual substrates. Applied Physics Letters, Vol.93 (No.7). 072108. doi:10.1063/1.2975188

Beer, C. (Chris), Whall, Terry E., Morris, R. J. H. (Richard J. H.), Parker, Evan H. C. and Leadley, D. R. (David R.) (2008) Anomalous Ge diffusion effects during Ge-condensation. In: 9th International Conference on Ultimate Integration on Silicon, Univ Udine, Udine, Italy, Mar 13-14, 2008. Published in: ULIS 2008: Proceedings of the 9th International Conference on Ultimate Integration on Silicon pp. 207-210. ISBN 978-1-4244-1729-2. doi:10.1109/ULIS.2008.4527175

Parsons, J., Morris, R. J. H. (Richard J. H.), Leadley, D. R. (David R.) and Parker, Evan H. C. (2008) Relaxation of strained silicon on Si0.5Ge0.5 virtual substrates. In: 9th International Conference on Ultimate Integration on Silicon, Univ Udine, Udine, Italy, 13-14 Mar 2008. Published in: ULIS 2008 : Proceedings of the 9th International conference on ultimate integration on silicon pp. 211-214. ISBN 978-1-4244-1729-2. doi:10.1109/ULIS.2008.4527176

2007

Morris, R. J. H. (Richard J. H.), Dowsett, M. G., Dalal, S. H., Baptista, D. L., Teo, K. B. K. and Milne, W. I. (2007) Spatial determination of gold catalyst residue used in the production of ZnO nanowires by SIMS depth profiling analysis. Surface and Interface Analysis, Vol.39 (No.11). pp. 898-901. doi:10.1002/sia.2610

Parsons, J., Parker, Evan H. C., Leadley, D. R. (David R.), Morris, R. J. H. (Richard J. H.), Grasby, T. J. and Capewell, Adam Daniel (2007) Erratum: Misfit strain relaxation and dislocation formation in supercritical strained silicon on virtual substrates [ Appl. Phys. Lett. 91, 063127 (2007) ]. Applied Physics Letters, Vol.91 (No.18). doi:10.1063/1.2798244

2006

Franco, N., Alves, E., Vallera, A., Morris, R. J. H. (Richard J. H.), Mironov, O. A., Parker, Evan H. C. and Barradas, N. P. (2006) RBS and XRD analysis of SiGe/Ge heterostructures for p-HMOS applications. In: 17th International Conference on Ion Beam Analysis, Seville, Spain, June 26 - July 01, 2005. Published in: Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, Vol.249 (No.1-2). pp. 878-881. ISSN 1872-9584. doi:10.1016/j.nimb.2006.03.155

Morris, R. J. H. (Richard J. H.), Dowsett, M. G. and Chang, R. J. H. (2006) Different optical conductivity enhancement (OCE) protocols to eliminate charging during ultra low energy SIMS profiling of semiconductor and semi-insulating materials. In: 15th International Conference on Secondary Ion Mass Spectrometry (SIMS XV), Univ Manchester, Manchester, 12-16 Sep 2005. Published in: Applied Surface Science, Volume 252 (Number 19 ). pp. 7221-7223. ISSN 0169-4332. doi:10.1016/j.apsusc.2006.02.143

Fearn, S., McPhail, D. S., Morris, R. J. H. (Richard J. H.) and Dowsett, M. G. (2006) Sodium and hydrogen analysis of room temperature glass corrosion using low energy CsSIMS. In: 15th International Conference on Secondary Ion Mass Spectrometry (SIMS XV), Univ Manchester, Manchester, 12-16 Sep 2005. Published in: Applied Surface Science, Volume 252 (Number 19 ). pp. 7070-7073. ISSN 0169-4332. doi:10.1016/j.apsusc.2006.02.101

Guzman de la Mata, B., Dowsett, M. G. and Morris, R. J. H. (Richard J. H.) (2006) Alternative method of using an electron beam for charge compensation during ultralow energy secondary-ion-mass spectroscopy experiments. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 24 (4). pp. 953-956. doi:10.1116/1.2201044

2003

Morris, R. J. H. (Richard J. H.) (2003) Optimisation studies on strain-engineered Germanium heterostructures. PhD thesis, University of Warwick.

1999

Grasby, T. J., Parry, C. P., Phillips, P. J. (Peter J.), McGregor, Barry M., Morris, R. J. H. (Richard J. H.), Braithwaite, Glyn, Whall, Terry E., Parker, Evan H. C., Hammond, Richard, Knights, Andrew P. and Coleman, P. G. (1999) Technique for producing highly planar Si/SiO0.64Ge0.36/Si metal–oxide–semiconductor field effect transistor channels. Applied Physics Letters, Vol.74 (No.13). pp. 1848-1850. doi:10.1063/1.123689