2015

Rajpalke, Mohana K., Linhart, W. M., Yu, K. M., Jones, T. S. (Tim S.), Ashwin, M. J. and Veal, T. D. (Tim D.) (2015) Bi flux-dependent MBE growth of GaSbBi alloys. Journal of Crystal Growth, 425 . pp. 241-244. doi:10.1016/j.jcrysgro.2015.02.093 ISSN 0022-0248. [ 🗎 Public].

2014

Rajpalke, Mohana K., Linhart, W. M., Yu, K. M., Birkett, Michael Alexander, Alaria, Jonathan, Bomphrey, John James, Sallis, S., Piper, L. F. J., Jones, T. S. (Tim S.), Ashwin, M. J. and Veal, T. D. (Tim D.) (2014) Bi-induced band gap reduction in epitaxial InSbBi alloys. Applied Physics Letters, Volume 105 (Number 21). Article number 212101. doi:10.1063/1.4902442 ISSN 0003-6951. [ 🗎 Public].

Kopaczek, J., Rajpalke, Mohana K., Linhart, W. M., Jones, T. S. (Tim S.), Ashwin, M. J., Kudrawiec, R. and Veal, T. D. (Tim D.) (2014) Photoreflectance spectroscopy of GaInSbBi and AlGaSbBi quaternary alloys. Applied Physics Letters, Volume 105 (Number 11). Article number 112102. doi:10.1063/1.4895930 ISSN 0003-6951. [ 🗎 Public].

Rajpalke, Mohana K., Linhart, W. M., Birkett, Michael Alexander, Yu, K. M., Alaria, Jonathan, Kopaczek, Jan, Kudrawiec, Robert, Jones, T. S. (Tim S.), Ashwin, M. J. and Veal, T. D. (Tim D.) (2014) High Bi content GaSbBi alloys. Journal of Applied Physics, Volume 116 (Number 4). 043511. doi:10.1063/1.4891217 ISSN 0021-8979. [ 🗎 Public].

2013

Rajpalke, Mohana K., Linhart, W. M., Birkett, Michael Alexander, Yu, K. M., Scanlon, David O., Buckeridge, John, Jones, T. S. (Tim S.), Ashwin, M. J. and Veal, T. D. (Tim D.) (2013) Growth and properties of GaSbBi alloys. Applied Physics Letters, Volume 103 (Number 14). 142106. doi:10.1063/1.4824077 ISSN 0003-6951. [ 🗎 Public].

2012

Linhart, W. M. (2012) Electron accumulation and doping in InN and InGaN alloys. PhD thesis, University of Warwick.

Linhart, W. M., Chai, J., Morris, R. J. H. (Richard J. H.), Dowsett, M. G., McConville, C. F. (Chris F.), Durbin, S. and Veal, T. D. (Tim D.) (2012) Giant reduction of InN surface electron accumulation : compensation of surface donors by Mg dopants. Physical Review Letters, Vol.109 (No.24). Article no. 247605. doi:10.1103/PhysRevLett.109.247605 ISSN 0031-9007.

Chai, Jessica H., Myers, Thomas H., Song, Young-Wook, Reeves, Roger J., Linhart, W. M., Morris, R. J. H. (Richard J. H.), Veal, T. D. (Tim D.), Dowsett, M. G., McConville, C. F. (Chris F.) and Durbin, Steven M. (2012) MBE growth and characterization of Mn-doped InN. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Volume 30 (Number 2). 02B124. doi:10.1116/1.3687903 ISSN 1071-1023.

Tuna, Ö., Linhart, W. M., Lutsenko, E.V., Rzheutski, M.V., Yablonskii, G.P., Veal, T. D. (Tim D.), McConville, C. F. (Chris F.), Giesen, C., Kalisch, H., Vescan, A. and Heuken, M. (2012) Structural, electrical and optical characterization of MOCVD grown In-rich InGaN layers. Journal of Crystal Growth, Vol. 358 . pp. 51-56. doi:10.1016/j.jcrysgro.2012.07.040 ISSN 00220248.

2011

Linhart, W. M., Tuna, Ö., Veal, T. D. (Tim D.), Mudd, James J., Giesen, C., Heuken, M. and McConville, C. F. (Chris F.) (2011) Surface electronic properties of In-rich InGaN alloys grown by MOCVD. physica status solidi (c), Vol.9 (No.3-4). pp. 662-665. doi:10.1002/pssc.201100463 ISSN 1862-6351.

2010

Linhart, W. M., Veal, T. D. (Tim D.), King, P. D. C., Koblmueller, G., Gallinat, C. S., Speck, James S. and McConville, C. F. (Chris F.) (2010) Surface, bulk, and interface electronic properties of nonpolar InN. Applied Physics Letters, Vol.97 (No.11). Article: 112103. doi:10.1063/1.3488821 ISSN 0003-6951.